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2020 – today
- 2023
[j1]Nicolò Zagni
, Francesco Maria Puglisi, Paolo Pavan, Muhammad Ashraful Alam:
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges. Proc. IEEE 111(2): 158-184 (2023)- 2022
- [c8]Marcello Cioni, Nicolò Zagni, Alessandro Chini:
A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps. ESSDERC 2022: 372-375 - [c7]Marcello Cioni, Nicolò Zagni, Alessandro Chini:
Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications. IRPS 2022: 11 - 2020
- [c6]Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Giovanni Verzellesi:
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs. IRPS 2020: 1-5
2010 – 2019
- 2019
- [c5]Marco Roccetti, Giovanni Delnevo, Luca Casini, Nicolò Zagni, Giuseppe Cappiello:
A Paradox in ML Design: Less data for a smarter water metering cognification experience. GOODTECHS 2019: 201-206 - [c4]Luca Casini, Giovanni Delnevo, Marco Roccetti, Nicolò Zagni, Giuseppe Cappiello:
Deep Water: Predicting Water Meter Failures Through a Human-Machine Intelligence Collaboration. IHIET 2019: 688-694 - 2018
- [c3]Francesco Maria Puglisi, Lorenzo Pacchioni, Nicolo Zagni, Paolo Pavan:
Energy-Efficient Logic-in-Memory I-bit Full Adder Enabled by a Physics-Based RRAM Compact Model. ESSDERC 2018: 50-53 - 2017
- [c2]Francesco Maria Puglisi, Nicolo Zagni, Luca Larcher, Paolo Pavan:
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design. ESSDERC 2017: 204-207 - [c1]Nicolo Zagni, Francesco Maria Puglisi, Giovanni Verzellesi, Paolo Pavan:
Variability and sensitivity to process parameters variations in InGaAs dual-gate ultra-thin body MOSFETs: A scaling perspective. PATMOS 2017: 1-5
Coauthor Index
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