This is a preview of subscription content, log in via an institution to check access.
References
Islam Z, Glavin N, Haque A. The potential and challenges of in situ microscopy of electronic devices and materials. In: Wide Bandgap Semiconductor-Based Electronics. Bristol: IOP Publishing Ltd., 2020
Zhang Y W, Wang C L, Wu X. Review of electrical stimulus methods of in situ transmission electron microscope to study resistive random access memory. Nanoscale, 2022, 14: 954–9552
Wang B, Wang T, Haque A, et al. In-situ TEM study of domain switching in GaN thin films. Appl Phys Lett, 2017, 111: 113103
Islam Z, Haque A, Glavin N. Real-time visualization of GaN/AlGaN high electron mobility transistor failure at offstate. Appl Phys Lett, 2018, 113: 183102
Wang B, Islam Z, Haque A, et al. In situ transmission electron microscopy of transistor operation and failure. Nanotechnology, 2018, 29: 31LT01
Acknowledgements
This work was supported in part by National Natural Science Foundation of China (Grant Nos. 62204185, 62274130) and Fundamental Research Funds for the Central Universities (Grant No. XJS221112).
Author information
Authors and Affiliations
Corresponding authors
Additional information
Supporting information Video and other supplemental document. The supporting information is available online at info.scichina.com and link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.
Electronic Supplementary Material
Supplementary material, approximately 35.9 MB.
Rights and permissions
About this article
Cite this article
Zhu, Q., Wang, Z., Wei, Y. et al. Realtime observation of “spring fracture” like AlGaN/GaN HEMT failure under bias. Sci. China Inf. Sci. 67, 114401 (2024). https://doi.org/10.1007/s11432-023-3867-4
Received:
Revised:
Accepted:
Published:
DOI: https://doi.org/10.1007/s11432-023-3867-4