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90 nm process

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This article is about semiconductor manufacturing. For the spaceport with FAA LID code of 90NM, see Spaceport America.

The 90 nanometer (90 nm) process refers to the level of CMOS process technology that was reached in the 2004–2005 timeframe, by most leading semiconductor companies, like Toshiba, Fujitsu, Elpida, Intel, AMD, Infineon, Texas Instruments, IBM, and TSMC.

The origin of the 90 nm value is historical, as it reflects a trend of 70% scaling every 2–3 years. The 90 nm process was introduced by Toshiba in 2002,[1] and then Fujitsu in 2003.[2] The naming is formally determined by the International Technology Roadmap for Semiconductors (ITRS).

The 193 nm wavelength was introduced by many (but not all) companies for lithography of critical layers mainly during the 90 nm node. Yield issues associated with this transition (due to the use of new photoresists) were reflected in the high costs associated with this transition.

Even more significantly, the 300 mm wafer size became mainstream at the 90 nm node. The previous wafer size was 200 mm diameter.

Example: Elpida 90 nm DDR2 SDRAM process[3]

  • Use of 300 mm wafer size
  • Use of KrF (248 nm) lithography with optical proximity correction
  • 512 Mbit
  • 1.8 V operation
  • Derivative of earlier 110 nm and 100 nm processes

Processors using 90 nm process technology

See also

References

  1. ^ "Toshiba and Sony Make Major Advances in Semiconductor Process Technologies". Toshiba. 3 December 2002. Retrieved 26 June 2019.
  2. ^ 65nm CMOS Process Technology
  3. ^ Elpida's presentation at Via Technology Forum 2005 and Elpida 2005 Annual Report
Preceded by
130 nm 		CMOS manufacturing processes Succeeded by
65 nm
 

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