1 μm process

The 1 μm process (1 micrometer process) is a level of MOSFET semiconductor process technology that was commercialized around the 1984–1986 timeframe,^[1]^[2] by companies like NTT, NEC, Intel and IBM. It was the first process where CMOS was common (as opposed to NMOS).

The 1 μm process refers to the minimum size that could be reliably produced. The smallest transistors and other circuit elements on a chip made with this process were around 1 micrometers wide.

The earliest MOSFET with a 1 μm NMOS channel length was fabricated by a research team led by Robert H. Dennard, Hwa-Nien Yu and F.H. Gaensslen at the IBM T.J. Watson Research Center in 1974.^[3]

Products featuring 1.0 μm manufacturing process

NTT introduced the 1 μm process for its DRAM memory chips, including its 64k in 1979 and 256k in 1980.^[4]
NEC's 1 Mbit DRAM memory chip was manufactured with the 1 μm process in 1984.^[5]
Intel 80386 CPU launched in 1985 was manufactured using this process.^[1]
Intel uses this process on the CHMOS III-E technology.^[6]
Intel uses this process on the CHMOS IV technology.^[7]

References

^ ^a ^b Mueller, S (21 July 2006). "Microprocessors from 1971 to the Present". informIT. Archived from the original on 19 April 2015. Retrieved 11 May 2012.
^ Myslewski, R (15 November 2011). "Happy 40th birthday, Intel 4004!". TheRegister. Archived from the original on 19 April 2015. Retrieved 19 April 2015.
^ Dennard, Robert H.; Yu, Hwa-Nien; Gaensslen, F. H.; Rideout, V. L.; Bassous, E.; LeBlanc, A. R. (October 1974). "Design of ion-implanted MOSFET's with very small physical dimensions" (PDF). IEEE Journal of Solid-State Circuits. 9 (5): 256–268. Bibcode:1974IJSSC...9..256D. doi:10.1109/JSSC.1974.1050511. S2CID 283984.
^ Gealow, Jeffrey Carl (10 August 1990). "Impact of Processing Technology on DRAM Sense Amplifier Design" (PDF). Massachusetts Institute of Technology. pp. 149–166. Retrieved 25 June 2019 – via CORE.
^ "Memory". STOL (Semiconductor Technology Online). Retrieved 25 June 2019.
^ Intel Corporation, "New Product Focus: Components: Two-and Four-Megabit EPROMs are High-Density Performers", Microcomputer Solutions, September/October 1989, page 14
^ Intel Corporation, "New Product Focus: Components: New ASSP Suits Mobile Applications", Microcomputer Solutions, September/October 1990, page 11

External links

Brief timeline of microprocessor development

Preceded by 1.5 μm process	MOSFET semiconductor device fabrication process	Succeeded by 800 nm process

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[informIT-1] Mueller, S (21 July 2006). "Microprocessors from 1971 to the Present". informIT. Archived from the original on 19 April 2015. Retrieved 11 May 2012.

[2] Myslewski, R (15 November 2011). "Happy 40th birthday, Intel 4004!". TheRegister. Archived from the original on 19 April 2015. Retrieved 19 April 2015.

[3] Dennard, Robert H.; Yu, Hwa-Nien; Gaensslen, F. H.; Rideout, V. L.; Bassous, E.; LeBlanc, A. R. (October 1974). "Design of ion-implanted MOSFET's with very small physical dimensions" (PDF). IEEE Journal of Solid-State Circuits. 9 (5): 256–268. Bibcode:1974IJSSC...9..256D. doi:10.1109/JSSC.1974.1050511. S2CID 283984.

[Gealow-4] Gealow, Jeffrey Carl (10 August 1990). "Impact of Processing Technology on DRAM Sense Amplifier Design" (PDF). Massachusetts Institute of Technology. pp. 149–166. Retrieved 25 June 2019 – via CORE.

[stol-5] "Memory". STOL (Semiconductor Technology Online). Retrieved 25 June 2019.

[6] Intel Corporation, "New Product Focus: Components: Two-and Four-Megabit EPROMs are High-Density Performers", Microcomputer Solutions, September/October 1989, page 14

[7] Intel Corporation, "New Product Focus: Components: New ASSP Suits Mobile Applications", Microcomputer Solutions, September/October 1990, page 11

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