This paper demonstrates a wide locking range and low power Ku band injection locked frequency div... more This paper demonstrates a wide locking range and low power Ku band injection locked frequency divider (ILFD). The circuit is implemented in tsmc TM 0.18 m 1P6M RF CMOS process. The measured locking range of the divide-by-2 ILFD is 3.6 GHz from 10.8 to 14.4 GHz at 0-dBm input power. The correspondent locking bandwidth is 28.57%. The core power consumption is 5.0 mW at 0.9-V supply voltage and 5.56-mA current draw. The chip area is 1.849 × 0.998 mm 2 .
A triple-band and wide operation range divide-by-2 injection-locked frequency divider (ILFD) usin... more A triple-band and wide operation range divide-by-2 injection-locked frequency divider (ILFD) using a TSMC 0.18 lm 1P6 M CMOS technology is presented. The 72 ILFD circuit is realized with a cross-coupled n-core MOS LC-tank oscillator with a 6th order LC res-onator constructed from three single-resonance parallel LC resonators. The core power consumption of the ILFD core is 11.6 mW at the supply voltage of 1 V. The free-running ILFD can operate at three frequency bands: 8.75, 5.79 and 3.7 GHz, and the ILFD operation range covers a high-band frequency range from 17.1 to 18.3 GHz, a middle-band from 10.1 to 12.7 GHz, and a low-band from 6.0 to 7.7 GHz. The band selection is obtained by tuning the varactor's control bias. Keywords Triple-band Á CMOS Á Divide-by-2 LC-tank injection-locked frequency divider Á Wide-band operation range
—This paper derives and analyzes the s-domain linear and time domain nonlinear models for a C-ban... more —This paper derives and analyzes the s-domain linear and time domain nonlinear models for a C-band wide locking range injection locked voltage controlled oscillator (ILVCO). Van der Pol equation is conducted to describe the behavior of ILVCO with different injection frequencies. Three phase plane plots, that are free-run, injection locked, and chaos states, are observed. The proposed ILVCO is fabricated in tsmc TM 0.18 μm 1P6M process. The measurements show that the locking range is from 3.6 GHz to 6.4 GHz at 0-dBm input power. The locking bandwidth is calculated as 56%.
This paper demonstrates a wide locking range and low power Ku band injection locked frequency div... more This paper demonstrates a wide locking range and low power Ku band injection locked frequency divider (ILFD). The circuit is implemented in tsmc TM 0.18 m 1P6M RF CMOS process. The measured locking range of the divide-by-2 ILFD is 3.6 GHz from 10.8 to 14.4 GHz at 0-dBm input power. The correspondent locking bandwidth is 28.57%. The core power consumption is 5.0 mW at 0.9-V supply voltage and 5.56-mA current draw. The chip area is 1.849 × 0.998 mm 2 .
A triple-band and wide operation range divide-by-2 injection-locked frequency divider (ILFD) usin... more A triple-band and wide operation range divide-by-2 injection-locked frequency divider (ILFD) using a TSMC 0.18 lm 1P6 M CMOS technology is presented. The 72 ILFD circuit is realized with a cross-coupled n-core MOS LC-tank oscillator with a 6th order LC res-onator constructed from three single-resonance parallel LC resonators. The core power consumption of the ILFD core is 11.6 mW at the supply voltage of 1 V. The free-running ILFD can operate at three frequency bands: 8.75, 5.79 and 3.7 GHz, and the ILFD operation range covers a high-band frequency range from 17.1 to 18.3 GHz, a middle-band from 10.1 to 12.7 GHz, and a low-band from 6.0 to 7.7 GHz. The band selection is obtained by tuning the varactor's control bias. Keywords Triple-band Á CMOS Á Divide-by-2 LC-tank injection-locked frequency divider Á Wide-band operation range
—This paper derives and analyzes the s-domain linear and time domain nonlinear models for a C-ban... more —This paper derives and analyzes the s-domain linear and time domain nonlinear models for a C-band wide locking range injection locked voltage controlled oscillator (ILVCO). Van der Pol equation is conducted to describe the behavior of ILVCO with different injection frequencies. Three phase plane plots, that are free-run, injection locked, and chaos states, are observed. The proposed ILVCO is fabricated in tsmc TM 0.18 μm 1P6M process. The measurements show that the locking range is from 3.6 GHz to 6.4 GHz at 0-dBm input power. The locking bandwidth is calculated as 56%.
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