We present a simulation approach to assess the reliability of an RF CMOS circuit under user condi... more We present a simulation approach to assess the reliability of an RF CMOS circuit under user conditions, based on existing DC degradation models for gate-oxide breakdown and hot-carrier degradation. The simulator allows for lifetime prediction of circuits that can withstand multiple breakdown events. Simulation results show that three power amplifiers with comparable initial circuit performance show an astronomic difference in reliability. The tool thus proves to be an asset in the analog design process.
Page 1. Scalable CMOS Power Devices with 70% PAE and 1, 2 and 3.4 Watt Output Power at 2GHz Musta... more Page 1. Scalable CMOS Power Devices with 70% PAE and 1, 2 and 3.4 Watt Output Power at 2GHz Mustafa Acar, Mark P. van der Heijden, Iouri Volokhine ∗ , Melina Apostolidou, Jan Sonsky ∗ and Jan S. Vromans NXP Semiconductors ...
Abstract A compact broadband class-E power amplifier design is presented. High broadband power ... more Abstract A compact broadband class-E power amplifier design is presented. High broadband power efficiency is observed from 2.0-2.5 GHz, where drain efficiency >74% and PAE >71%, when using 2nd-harmonic input tuning. The highest in-band efficiency performance is ...
The Class-E power amplifier is widely used due to its high efficiency, resulting from switching a... more The Class-E power amplifier is widely used due to its high efficiency, resulting from switching at zero voltage and zero slope of the switch voltage. In this paper, we extend general analytical solutions for the Class-E power amplifier to the ideal single-ended Variable-Voltage Class-E (Class-Evv) power amplifier that switches at zero slope but not necessarily at zero voltage.
IEEE Transactions on Circuits and Systems I-regular Papers, 2008
In modern CMOS technologies reliability issues limit the maximum operating voltage of transistors... more In modern CMOS technologies reliability issues limit the maximum operating voltage of transistors. This prevents the integration of efficient power amplifiers (e.g., audio or RF) since stacked devices are needed to prevent breakdown, which reduces efficiency. Transistor reliability is strongly related to operating voltages; higher voltages result in faster degradation and hence in lower reliability and shorter life time. Degradation can be monitored by oxide degradation, threshold voltage-shifts and mobility reduction.
Many critical design trade-offs of the Class-E power amplifier (e.g power efficiency) are influen... more Many critical design trade-offs of the Class-E power amplifier (e.g power efficiency) are influenced by the switch onresistance and the value of dc-feed drain inductance. In literature, the time-domain mathematical analyses of the Class-E power amplifier with finite dc-feed inductance assume zero switch onresistance in order to alleviate the mathematical difficulties; resulting in non-optimum designs.
This work presented the first broadband PWM-controlled RF SMPA driver reaching 8.04Vpp up to 3.6G... more This work presented the first broadband PWM-controlled RF SMPA driver reaching 8.04Vpp up to 3.6GHz using a 1.2V baseline 65nm CMOS technology. The CMOS driver can serve as a key building block for next-generation reconfigurable multiband multimode transmitters for wireless infrastructure systems, interfacing digital CMOS circuitry with high-power transistors.
Analog Integrated Circuits and Signal Processing, 2004
In this paper we propose a novel inductorless injection-locked frequency divider (ILFD) that can ... more In this paper we propose a novel inductorless injection-locked frequency divider (ILFD) that can make divisions with ratios 2,4,6 and 8 with wide locking ranges. Fabricated in a digital 0.18 μm CMOS process the divider can operate up to 15 GHz. The measured locking ranges of the divider for division ratios 4 and 6 are 1.6 GHz and 1.1 GHz wide respectively. The current consumption of the divider is 3.8 mA operating at 1.8 V supply. The active area of the chip is 100×67 μm2.
IEEE Transactions on Pattern Analysis and Machine Intelligence, 2006
In literature, it is widely accepted that the design of Class-E Power Amplifier (PA) with finite ... more In literature, it is widely accepted that the design of Class-E Power Amplifier (PA) with finite dc feed inductance requires a long iterative solution procedure. To avoid such iterative solution methods, analytical design equations should be known. The problem associated with the finite dc feed inductance Class-E PA is usually ascribed to the fact that the circuit element values are transcendental functions of the input parameters which is assumed to prevent the derivation of exact or fully analytical design equations.
I. I NTRODUCTION Many different aspects of the Class-E power amplifier (PA) have been extensively... more I. I NTRODUCTION Many different aspects of the Class-E power amplifier (PA) have been extensively studied in the last three decades [1]- [5]. The ideal Class-E PA features zero-level and zero-slope switching which results in high efficiency. The reportedly sub-optimum operation with ...
IEEE Transactions on Circuits and Systems I-regular Papers, 2007
Many critical design trade-offs of the Class-E power amplifier (e.g power efficiency) are influen... more Many critical design trade-offs of the Class-E power amplifier (e.g power efficiency) are influenced by the switch onresistance and the value of dc-feed drain inductance. In literature, the time-domain mathematical analyses of the Class-E power amplifier with finite dc-feed inductance assume zero switch onresistance in order to alleviate the mathematical difficulties; resulting in non-optimum designs.
In literature, it is widely accepted that the design of Class-E Power Amplifier (PA) with finite ... more In literature, it is widely accepted that the design of Class-E Power Amplifier (PA) with finite dc feed inductance requires a long iterative solution procedure. To avoid such iterative solution methods, analytical design equations should be known. The problem associated with the finite dc feed inductance Class-E PA is usually ascribed to the fact that the circuit element values are transcendental functions of the input parameters which is assumed to prevent the derivation of exact or fully analytical design equations.
Organization of the Islamic Conference (OIC) is the second largest inter-governmental organizatio... more Organization of the Islamic Conference (OIC) is the second largest inter-governmental organization after UN with its 57 members. OIC accounts for 23.6 percent of world population, 5.25 percent of world GDP, and 8.7 percent of world trade as of 2006. When it comes to having world valuable resources, OIC's potential is even more striking with more than 70% of oil and nearly 50% of natural gas reserves of the world. The OIC Ten -Year Programme of Action, adopted in 2005, clearly identifies increased economic cooperation among the member countries as a key strategy for higher economic growth and welfare. Nearly a dozen member states have already signed the Protocol on Preferential Tariff Scheme (PRETAS), which proposes a preferential trade regime among the member countries to be effective as of January, 2009. Further steps in the coming years, including possible free trade areas and customs union are also on the agenda.
We present a simulation approach to assess the reliability of an RF CMOS circuit under user condi... more We present a simulation approach to assess the reliability of an RF CMOS circuit under user conditions, based on existing DC degradation models for gate-oxide breakdown and hot-carrier degradation. The simulator allows for lifetime prediction of circuits that can withstand multiple breakdown events. Simulation results show that three power amplifiers with comparable initial circuit performance show an astronomic difference in reliability. The tool thus proves to be an asset in the analog design process.
Page 1. Scalable CMOS Power Devices with 70% PAE and 1, 2 and 3.4 Watt Output Power at 2GHz Musta... more Page 1. Scalable CMOS Power Devices with 70% PAE and 1, 2 and 3.4 Watt Output Power at 2GHz Mustafa Acar, Mark P. van der Heijden, Iouri Volokhine ∗ , Melina Apostolidou, Jan Sonsky ∗ and Jan S. Vromans NXP Semiconductors ...
Abstract A compact broadband class-E power amplifier design is presented. High broadband power ... more Abstract A compact broadband class-E power amplifier design is presented. High broadband power efficiency is observed from 2.0-2.5 GHz, where drain efficiency >74% and PAE >71%, when using 2nd-harmonic input tuning. The highest in-band efficiency performance is ...
The Class-E power amplifier is widely used due to its high efficiency, resulting from switching a... more The Class-E power amplifier is widely used due to its high efficiency, resulting from switching at zero voltage and zero slope of the switch voltage. In this paper, we extend general analytical solutions for the Class-E power amplifier to the ideal single-ended Variable-Voltage Class-E (Class-Evv) power amplifier that switches at zero slope but not necessarily at zero voltage.
IEEE Transactions on Circuits and Systems I-regular Papers, 2008
In modern CMOS technologies reliability issues limit the maximum operating voltage of transistors... more In modern CMOS technologies reliability issues limit the maximum operating voltage of transistors. This prevents the integration of efficient power amplifiers (e.g., audio or RF) since stacked devices are needed to prevent breakdown, which reduces efficiency. Transistor reliability is strongly related to operating voltages; higher voltages result in faster degradation and hence in lower reliability and shorter life time. Degradation can be monitored by oxide degradation, threshold voltage-shifts and mobility reduction.
Many critical design trade-offs of the Class-E power amplifier (e.g power efficiency) are influen... more Many critical design trade-offs of the Class-E power amplifier (e.g power efficiency) are influenced by the switch onresistance and the value of dc-feed drain inductance. In literature, the time-domain mathematical analyses of the Class-E power amplifier with finite dc-feed inductance assume zero switch onresistance in order to alleviate the mathematical difficulties; resulting in non-optimum designs.
This work presented the first broadband PWM-controlled RF SMPA driver reaching 8.04Vpp up to 3.6G... more This work presented the first broadband PWM-controlled RF SMPA driver reaching 8.04Vpp up to 3.6GHz using a 1.2V baseline 65nm CMOS technology. The CMOS driver can serve as a key building block for next-generation reconfigurable multiband multimode transmitters for wireless infrastructure systems, interfacing digital CMOS circuitry with high-power transistors.
Analog Integrated Circuits and Signal Processing, 2004
In this paper we propose a novel inductorless injection-locked frequency divider (ILFD) that can ... more In this paper we propose a novel inductorless injection-locked frequency divider (ILFD) that can make divisions with ratios 2,4,6 and 8 with wide locking ranges. Fabricated in a digital 0.18 μm CMOS process the divider can operate up to 15 GHz. The measured locking ranges of the divider for division ratios 4 and 6 are 1.6 GHz and 1.1 GHz wide respectively. The current consumption of the divider is 3.8 mA operating at 1.8 V supply. The active area of the chip is 100×67 μm2.
IEEE Transactions on Pattern Analysis and Machine Intelligence, 2006
In literature, it is widely accepted that the design of Class-E Power Amplifier (PA) with finite ... more In literature, it is widely accepted that the design of Class-E Power Amplifier (PA) with finite dc feed inductance requires a long iterative solution procedure. To avoid such iterative solution methods, analytical design equations should be known. The problem associated with the finite dc feed inductance Class-E PA is usually ascribed to the fact that the circuit element values are transcendental functions of the input parameters which is assumed to prevent the derivation of exact or fully analytical design equations.
I. I NTRODUCTION Many different aspects of the Class-E power amplifier (PA) have been extensively... more I. I NTRODUCTION Many different aspects of the Class-E power amplifier (PA) have been extensively studied in the last three decades [1]- [5]. The ideal Class-E PA features zero-level and zero-slope switching which results in high efficiency. The reportedly sub-optimum operation with ...
IEEE Transactions on Circuits and Systems I-regular Papers, 2007
Many critical design trade-offs of the Class-E power amplifier (e.g power efficiency) are influen... more Many critical design trade-offs of the Class-E power amplifier (e.g power efficiency) are influenced by the switch onresistance and the value of dc-feed drain inductance. In literature, the time-domain mathematical analyses of the Class-E power amplifier with finite dc-feed inductance assume zero switch onresistance in order to alleviate the mathematical difficulties; resulting in non-optimum designs.
In literature, it is widely accepted that the design of Class-E Power Amplifier (PA) with finite ... more In literature, it is widely accepted that the design of Class-E Power Amplifier (PA) with finite dc feed inductance requires a long iterative solution procedure. To avoid such iterative solution methods, analytical design equations should be known. The problem associated with the finite dc feed inductance Class-E PA is usually ascribed to the fact that the circuit element values are transcendental functions of the input parameters which is assumed to prevent the derivation of exact or fully analytical design equations.
Organization of the Islamic Conference (OIC) is the second largest inter-governmental organizatio... more Organization of the Islamic Conference (OIC) is the second largest inter-governmental organization after UN with its 57 members. OIC accounts for 23.6 percent of world population, 5.25 percent of world GDP, and 8.7 percent of world trade as of 2006. When it comes to having world valuable resources, OIC's potential is even more striking with more than 70% of oil and nearly 50% of natural gas reserves of the world. The OIC Ten -Year Programme of Action, adopted in 2005, clearly identifies increased economic cooperation among the member countries as a key strategy for higher economic growth and welfare. Nearly a dozen member states have already signed the Protocol on Preferential Tariff Scheme (PRETAS), which proposes a preferential trade regime among the member countries to be effective as of January, 2009. Further steps in the coming years, including possible free trade areas and customs union are also on the agenda.
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