Papers by Virendra Tiwari
Lecture Notes in Electrical Engineering
2016 3rd International Conference on Emerging Electronics (ICEE), 2016
Resumo: De acordo com os Parâmetros Curriculares Nacionais do Ensino Médio (2000) têm-se que é ne... more Resumo: De acordo com os Parâmetros Curriculares Nacionais do Ensino Médio (2000) têm-se que é necessário compreender as funções básicas dos principais produtos de automação da informática, tais como, os sistemas operacionais, interfaces gráficas, editores de textos, planilhas de cálculo e aplicativos de apresentação, tendo como objetivo levar o aluno a aplicar seus conhecimentos matemáticos a situações diversas, utilizando-os na interpretação da ciência, na atividade tecnológica e nas atividades cotidianas. Ainda, as pesquisadoras Kaiber e Groenwald (2008) destacam a importância de utilizar as tecnologias no ensino da Matemática, como um recurso para estimular o aluno para o estudo, aprofundamento ou revisão dos conteúdos matemáticos. Dessa forma, o presente trabalho tem por objetivo apresentar atividades didáticas envolvendo os conteúdos matemáticos mencionados, utilizando a planilha eletrônica como um recurso pedagógico.
The University of North Carolina at Greensboro, 2016
Social Transformation – Digital Way, 2018
User Authentication enhancement system implement the secret sharing based Hybrid Technique using ... more User Authentication enhancement system implement the secret sharing based Hybrid Technique using Honeypot and Honey index to analyzed the security of the begin authentication system by reducing storage of honey word scheme. If attacker use the login or attempts to login then system generate the alarm,but not password disclouser detect. system is used when an adversary tries to enter into the system with a honeyword, an alarm is triggered to notify the administrator about a password leakage or tell user someone can access your account. Proposed system focus is on the use of fake passwords and accounts. The administrator creates fake accounts and detects a password disclosure, if any one of the honeypot account get used it will detect by admin. .We used password file Secret sharing. Storing H(P) instead of storing the password hash we creating the secret and storing secret servey. Main focus is used share values then no need to change the password when attacker to attack .
Lecture Notes in Electrical Engineering, 2020
In this paper, a new current-controlled memristor emulator circuit based on voltage differencing ... more In this paper, a new current-controlled memristor emulator circuit based on voltage differencing transconductance amplifier (VDTA) as an active circuit element is proposed. The proposed emulator circuit is simulated on the 180 nm CMOS technology node making it both cost and power-efficient emulator circuit. All the analytical derivations mentioned in this research work have been verified by simulation results obtained using virtuoso custom design platform of Cadence. The non-volatile nature of the proposed circuit has also been validated.
Lecture Notes in Electrical Engineering, 2020
Proceedings North Central Weed Control Conference, 1981, Sep 13, 1981
Data, Engineering and Applications, 2019
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2021
Lecture Notes in Electrical Engineering, 2020
This paper presents an AlGaN/GaN HEMT on 6H-SiC substrate. The impact of horizontal optimization ... more This paper presents an AlGaN/GaN HEMT on 6H-SiC substrate. The impact of horizontal optimization of gate terminal with source-to-gate spacing and drain-to-gate spacing on DC and RF characteristic of the high-electron-mobility transistor (HEMT) and impact of vertical optimization of gate terminal with recessing have been represented in this paper. The 1.25×/1.32×/1.204× improvements in the drain current/transconductance/gate-source capacitance have been reported as the source-to-gate spacing varied from 1.833 to 0.633 µm. The 0.78× decrement in the ON-resistance of the device has been recorded as the drain-to-gate spacing varied from 3.327 to 1.327 µm. The recessing of the gate resulted in a 2.45× increment in the transconductance at the cost of severe decrement in the drain current as the recessing depth varied from 0 to 22 nm.
Materials Today: Proceedings, 2021
Abstract The present work focuses on investigation of tensile and compressive strengths of AA7050... more Abstract The present work focuses on investigation of tensile and compressive strengths of AA7050-B4C composites before heat treatment (as-cast) and post heat treatment. Composites with 2, 4, 6 and 8 wt% of B4C were prepared using bottom pouring stir-casting furnace. Microstructural analysis done using EDS and SEM results affirmed that the B4C particulates were homogeneously scattered in the alloy matrix. Solution heat treatment was carried out on cast samples at 530 °C for a period of 2 h. After solution, T6 heat treatment (Artificial Ageing) was performed on the samples at 180 °C for a period of 8 h. Mechanical strength properties- yield strength, ultimate tensile strength and compression strength, were determined according to ASTM standards.
The paper calculates the magnetic field of air gap of the PMSM by FEM, and replaces fourier serie... more The paper calculates the magnetic field of air gap of the PMSM by FEM, and replaces fourier series by fourier transform to study the wave of the magnetic field of air gap.The Electromagnetic Torque is calculated by Maxwell's stress tensor and Magnetic flux methods. The result is satisfactory.
2021 Devices for Integrated Circuit (DevIC), 2021
This paper presents a millimeter-wave wide bandgap material AlGaN/GaN heterojunction FET, also kn... more This paper presents a millimeter-wave wide bandgap material AlGaN/GaN heterojunction FET, also known as HEMT (high electron mobility transistors) for high frequency and high-power applications. This work employs the technique of recessed T-gate, which reduces gate resistance, helps to improve power consumption by reducing SCEs (short channel effects) and consists of floating metal with triple teeth (TT) located inside the buffer layer. The obtained fT and fMAX are 101 GHz and 530 GHz at VDS = 10 V with VGS = 0.4 V, respectively. Output power of 67.5 dBmW with power gain of 11.6 dB and power-added efficiency of 24.6% at VDS= 30 V, Continuous Wave at 10 GHz. The theoretical model of the device has been verified with the simulated results obtained from Atlas of Silvaco.
International Journal of Modern Trends in Engineering and Research, 2016
Steganography (1) is derived from the Greek word steganographic which means covered writing. It i... more Steganography (1) is derived from the Greek word steganographic which means covered writing. It is the science of secret communication. The goal of steganography is to hide the existence of the message from unauthorized party. The modern secure image steganography presents a task of transferring the embedded information to the destination without being detected by the attacker. Many different carrier file formats can be used, but digital images are the most popular because of their frequency on the Internet. For hiding secret information in images, there exist a large variety of steganographic techniques some are more complex than others and all of them have respective strong and weak points. In the LSB approach, the basic idea is to replace the Least Significant Bits (LSB) of the cover image with the Bits of the messages to be hidden without destroying the property of the cover image significantly. The LSB-based technique (2) is the most challenging one as it is difficult to differ...
Invertis Journal of Science & Technology, 2015
Metal matrix compositions (MMC) have become a leading materials and particles reinforced aluminum... more Metal matrix compositions (MMC) have become a leading materials and particles reinforced aluminum MMCs have received considerable attention due to their excellent mechanical properties like high hardness, high tensile strength etc. These materials are difficult to machine because of high hardness and abrasive nature of reinforcing elements like alumina particles. In this study, homogenized (2%, 4%, and 6% by weight of alumina) aluminum metal matrix composite materials were fabricated and selected as workpiece for experimental investigations of tool wear, surface roughness and metal removal rate. The titanium nitride coated tungsten carbide tool and uncoated tungsten carbide tools were used at different cutting speeds (265,400,535 rpm), feed rates (0.29, 0.32, 0.35 mm/rev.), and depth of cut (1.0, 1.5, 2.0 mm). The microstructures and mechanical properties of produced composite specimens have been investigated. It has been observed that increase of reinforcement element produced bett...
Calismada Ceroplastes rusci L. (Hemiptera: Coccidae) kabuklu disilerinden antik donemlerde kullan... more Calismada Ceroplastes rusci L. (Hemiptera: Coccidae) kabuklu disilerinden antik donemlerde kullanilan boya cikarma yontemleri ile elde edilen boyanin tekstil boyasi olarak kullanilabilirligi arastirilmistir. Kabuklu disiler incir agaclarindan toplandiktan sonra serilerek kurutulmus, su ile ezilerek kaynatilmis ve Pantone TCX Tekstil Kumas Renk Kartelasi’na gore Pantone 19-1760 Scarlet TC rengini almistir. Ham kumas parcalari boya icerisine konularak kaynatilmak suretiyle boyanmis ve sonucta Pantone 16-1529 Burnt Coral yani mercan rengini olusturmustur. Boyanan kumas parcalarinin yikanmasi sonucunda herhangi bir renk akmasi meydana gelmemistir. Sonuc olarak C. rusci kabuklarindan elde edilen bu boyanin organik tekstil urunlerinin boyanmasinda kullanilabilecegi onerilmistir.
In this paper, the performance of cubic InP/InyGa1 − yAs DG MOS-HEMTs, has been discerned by stud... more In this paper, the performance of cubic InP/InyGa1 − yAs DG MOS-HEMTs, has been discerned by studying the gate geometries’ effects on the breakdown voltage, subthreshold slope and maximum cut-off frequency owing to varying doping concentrations. After a meticulous simulation, the breakdown voltage was found out to be 1417 V. The proposed InP/InGaAs based HEMT exhibits subthreshold slope of 63.9 mV/decade. The unity gain frequency (ft) is found to be 113 GHz and is constant for 1 V < Vds < 2.5 V, while maximum frequency fmax = 216 GHz for Vds = 7 V. To explore the reliability of the device under high gate and drain bias conditions, a profound study has been carried out.
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Papers by Virendra Tiwari