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Modern wireless systems have an increasing need for multiband and tunable microwave and millimeter wave components. The Wireless communication system has several tunable circuits, which reduces the number of the circuits, size, and cost of the front-end. The application of micro electromechanical systems (MEMS) technology to RF systems enables production of components with low power consumption, high linearity, low insertion loss and high isolation. RF MEMS components are particularly attractive due to their tunable properties. The recent dramatic developments of personal communication devices forced the market to acquire miniaturized efficient devices, which is possible only by the development of radio frequency (RF) MEMS.
2014
With fast development of mobile communication technology, the increasingly complex communicating environment and the crowded spectrum have raised stringent requirements on the RF front-end performance. In this paper, the influence of human body on the communication performance is analyzed. In particular, it is shown that the antenna input impedance faces huge variation in the frame of body-centric devices. Consequently, automatic impedance matching appears to be crucial to improve the performance withstand the inconstant environment. The investigation of key tunable components of RF MEMS is therefore presented. A variable capacitor with symmetric balanced structure is designed to achieve a large capacitance tuning ratio and a remarkable linearity of the C-V response. The proposed RF MEMS variable capacitor was modeled and simulated. The results show a linearity factor of 99.82% in C-V response and a large tuning ratio of 480% in a low actuation voltage range from 0V to 16.3V.
IEEE Microwave Magazine, 2004
T he application of microelectromechanical systems (MEMS) technology to radio-frequency (RF)/microwave systems is on the verge of revolutionizing wireless communications [1]. Indeed, the fact that RF MEMS enables superior passive devices, such as switches, switchable (two-state) capacitors, tunable capacitors (varactors), inductors, transmission lines and resonators, makes it a prime candidate to enable a plethora of wireless appliances operating in the home/ground, mobile, and space spheres [2], such as handsets, base stations, and satellites. The quintessential properties with which these systems are endowed are those of low power consumption and reconfigurablity. It is for these reasons that RF MEMS is believed to be a key technology to enable ubiquitous wireless connectivity. In this context, it is the aim of this article to expose the impact and status of the application of RF-MEMS switchable capacitors, varactors, and switches in the three elements of this paradigm, namely, handsets, base stations, and satellites. In particular, issues such as system-level motivation/justification for RF MEMS, device requirements, high-volume manufacturing, packaging, and state-ofthe-art performance and reliability, are presented. Part one, the preceding article, presented a discussion on the fundamentals of RF-MEMS technology, in Table 3. Average on-wafer loss for RF MEMS and GaAs FET 3-b PSs [20]. RF MEMS Phase GaAs FET Phase Frequency(GHz) Shifter Loss(dB) Shifter Loss(dB) X-band (10) −0.9 to −1.0 −3 to −4 Ka-band (35) −1.7 to −2.0 −6 to −7 V-band (60) −2.3 to −2.6 −8 to −9 W-band (90) −2.6 to −3.0 −9 to −10
2014
This paper reviews the design and development of different building blocks of RF MEMS sub-systems. The blocks include switches, tunable capacitors, integrated inductors, filters, reconfigurable circuits, phase shifters and antennas. Starting with the details of a general micromachining process, a behavioral analysis of RF MEMS components and design challenges with present state-of-the-art are discussed. Different fabrication processes are outlined and discussed. The functional behaviors of different RFMEMS components are experimentally investigated over certain frequency bands of interest and validated through system level simulation. Finally, a low cost packaging scheme has been presented.
MEMS Sensors - Design and Application
This chapter intends to deal with the challenging field of communication systems known as reconfigurable radio-frequency systems. Mainly, it will present and analyze the design of different reconfigurable components based on radio-frequency microelectromechanical systems (RF MEMS) for different applications. This chapter will start with the description of the attractive properties that RF MEMS structures offer, giving flexibility in the RF systems design, and how these properties may be used for the design of reconfigurable RF MEMS-based devices. Then, the chapter will discuss the design, modeling, and simulation of reconfigurable components based on both theoretical modeling and well-known electromagnetic computing tools such as ADS, CST-MWS, and HFSS to evaluate the performance of such devices. Finally, the chapter will deal with the design and performance assessment of RF MEMS-based devices. Non-radiating devices, such as phase shifter and resonators, which are very important components in the hardware RF boards, will be addressed. Also, three types of frequency reconfigurable antennas, for the three different applications (radar, satellite, and wireless communication), will be proposed and evaluated. From this study, based on theoretical design and electromagnetic computing evaluation, it has been shown that RF MEMS-based devices can be an enabling solution in the design of the multiband reconfigurable radio-frequency devices.
2000 IEEE Emerging Technologies Symposium on Broadband, Wireless Internet Access. Digest of Papers (Cat. No.00EX414)
2013
Microelectromechanical systems (MEMS) is the technology of very small devices which merges both mechanical and electronic devices on a monolithic microchip to produce superior performance over solid-state components, especially for wireless applications. Popular MEMS switches for wireless applications include transmit/receive duplexers, band-mode selection, time delay for phased-array antennas, and reconfigurable antennas. This paper talks about the use of MEMS switches in conjunction of fractal antennas to achieve multi-frequency, reconfigurable antennas that can be used for a variety of communication applications and how micromachining can be used to fabricate new 3-D MEMS antenna structures for very high frequency applications. KeyTermsRe-configurable antennas, Numerical integration wideband, fractal, RFMEMS.
RF-MEMS (Radio Frequency-Micro Electro Mechanical Systems) are made up of moveable and fragile components (membranes, beams, cantilevers) that must be enclosed in for protection and for stable performance characteristics. Packaging is an important technology and critical aspect for the advancement of RF-MEMS. This paper elaborates the various RF-MEMS packaging challenges in the context of environment, modeling reliability, integration, stiction etc. All these challenges are application dependent; therefore case study on RF-MEMS switches with liquid crystal polymer (LCP) enclosure is presented for an in-depth illustration. RF-MEMS have the potential to have a tremendous impact on various fields such as wireless communication, defense, aerospace, radars, satellite etc. Packaging engineers are trying to overcome the packaging issues. They are trying to develop economical high-performance and highly reliable packaging solutions. The package plays a key role in ensuring the long term rel...
The general study is dedicated to Wireless Sensor Networks. The idea is to associate micro-mechanical and microwave communication functions to exchange information between a remote sensor and a base station [1]. A specific part of this project concerns the conception, realisation, and characterisation of a passive microwave frequency shifter used for back-modulation around 2 GHz. The interesting point was to develop this function with an integrated silicon micro-mechanical rotating structure. The paper describes the prototype of the RF MEMS already developed in ESIEE laboratory. And we insist on the microwave measurements performed and the associated equivalent models.
Advances in Science and Technology, 2012
MEMS (MicroElectroMechanical-Systems) technology applied to the field of Radio Frequency systems (i.e. RF-MEMS) has emerged in the last 10-15 years as a valuable and viable solution to manufacture low-cost and very high-performance passive components, like variable capacitors, inductors and micro-relays, as well as complex networks, like tunable filters, reconfigurable impedance matching networks and phase shifters, and so on. The availability of such components and their integration within RF systems (e.g. radio transceivers, radars, satellites, etc.) enables boosting the characteristics and performance of telecommunication systems, addressing for instance a significant increase of their reconfigurability. The benefits resulting from the employment of RF-MEMS technology are paramount, being some of them the reduction of hardware redundancy and power consumption, along with the operability of the same RF system according to multiple standards. After framing more in detail the whole context of RF-MEMS technology, this paper will provide a brief introduction on a typical RF-MEMS technology platform. Subsequently, some relevant examples of lumped RF-MEMS passive elements and complex reconfigurable networks will be reported along with their measured RF performance and characteristics.
This paper deals with the RF (Radio Frequency)-MEMS (Micro-Electro-Mechanical-System) switch importance in the wireless communication system. Also explains the dominance of RF-Switch over existing devices like PIN Diodes and Field-Effect-Transistors with size, power, isolation, insertion loss, and graphically how Pull-in voltage affects on the tip deflection of the switch.
I. INTRODUCTION
During the past decade, several new fabrication techniques have evolved which helped popularize micro electro-mechanical systems (MEMS) [1] and numerous novel devices have been reported in diverse areas of engineering and science. One such area is microwave and millimeter wave systems. MEMS technology for microwave applications should solve many intriguing problems of highfrequency technology for wireless communications. The recent and dramatic developments of personal communication devices forced the market to acquire miniaturized efficient devices, which is possible only by the development of radio frequency (RF) MEMS. The term RF MEMS [7] refers to the design of MEMS for RF integrated circuits. It should not be interpreted as the traditional MEMS devices operating at RF frequencies. MEMS devices in RF MEMS are used for actuation or adjustment of a separate RF device or component such as variable capacitors switches and filters.
II. MEMS AND RF MEMS SWITCH
RF switches [3] are the most common and basic circuit elements. Current solid state RF technologies (PIN diodeand FET-based) are utilized for their high switching speeds, commercial availability, low cost and ruggedness. This technology reached its maturity in areas such as device design, fabrication, packaging, applications/system insertion and consequently, high reliability and well-characterized performance. Some parameters such as isolation, insertion loss and power handling can be adjusted via device design to suit many application needs. In spite of this great design flexibility, there are two major bottlenecks with solid-state switches: breakdown of linearity and frequency bandwidth upper limits, and the degradation of insertion loss and isolation at signal frequencies above 1-2 GHz. By utilizing electromechanical architecture on a miniature-(or micro-) scale, RF MEMS switches [3] combine the advantages of traditional electromechanical switches (low insertion Loss, high isolation, extremely high linearity) with those of solidstate switches. . Parameters for the design of MEMS Switch Table 2.
Table 2
shows the EM simulated and circuit model S-parameters of a 300 μm by 200 μm membrane suspended 5 μm over a CPW transmission line having a center conductor width of 100μm and a gap of 50μm. Since the capacitance is very small and it dominates the shunt impedance, it is very difficult to determine the resistance International Journal of Innovations in Engineering and Science, Vol.2, No.7, 2017 www.ijies.net and inductance associated with the model in this state (offstate).The capacitance in the circuit model for this state is 0.0493pF.Fig 4.2 S-parameters of the EM simulated and circuit modeled for 300μm long, 5μm gap switch off-state
Switch Parameters of MEMS switch
The pull in voltage (V PI ) required to defect the beam in the MEMS switch can be determined with the equation
Where A is the actuation area, g is the gap between the beam and biasing structure in the neutral position, ε 0 is the permittivity constant of free space and K Beam is the spring constant of the beam. Assuming a nearly uniform electrostatic force on the cantilever beam, the spring
constant (K Beam ) is determines with equation
Where E is Young's modulus of the material, w is the width, t is the thickness, l is the length of the beam. The restoring force and the contact force will vary depending on the application and design of the MEMS switch. The restoring force F r is determined with equation
And contact force F c is determined with the equation
Where V Actuation is the applied switch bias and g on is the separation between the MEMS device and the biasing pad in the ON state. The applied switch bias V Actuation may be higher than the pull in voltage V PI to achieve the desired contact force value. The sacrificial layer thickness and the operating voltage can be varied as needed for the desired restoring force and the contact force of the specific application. RF MEMS devices mainly consist of four different designs viz. metal-contact switches, capacitive switches, switched capacitors and analog varactors. The metal contact switches utilize physical contact of metal with low contact resistance to achieve low insertion loss when actuated and can be operated from DC to RF frequency [4]. An RF MEMS switch with a capacitance ratio of 30-150 is commonly used for routing purposes (SPNT, DPDT, NxN matrices) and phase shifter designs. RF MEMS switches result in low-loss phase shifters with high linearity and provide 3-4dB improvement (6-8dB in two way telecommunication systems) over on-wafer designs using GaAs FET switches. An RF MEMS switched capacitor with a capacitance ratio of 2-6 is mostly used in tunable filters and reconfigurable networks. The analog varactors with a continuous tuning range of 1.5-8:1 can be used as tuning devices from 500MHz to 100GHz .Owing to the advantages of near-zero power consumption, very high isolation, very low insertion loss and low inter modulation products and very low cost.
III PHYSICAL DESCRIPTION OF MEMS CAPACITIVE SWITCH
A MEMS shunt capacitive switch is shown in Fig 2.3. It consists of a substrate which can be silicon, GaAs, alumina, LTCC or a quartz dielectric, which houses a RF transmission line; typically a CPW t-line. The CPW t-line is typically made of gold owing to its low conductor losses and ease of plating. The CPW is so chosen that the values of G/S/G correspond to 50ohm characteristic impedance. A shunt membrane is suspended at a height g0 above the dielectric layer on the transmission line where the dielectric thickness is t d , with a dielectric constant rd. The shunt membrane is Lμm long, Wμm wide, Tμm thick.. Typical values of the switch geometry are a dielectric thickness of 1000-1500 Å, a relative dielectric constant of 5.0-7.6 depending on the nitride material used, a bridge height of 2.5-5μm, a length around 200-300μm, and a width between 25 and 180μm depending on the switch capacitance required. The length is rarely shorter than 200μm due to the sharp increase of the actuation voltage with decreasing bridge length. The width is practically limited to 200μm so as to result in a flat contact area between the MEMS Bridge [13] and the t-line. The thickness of the shunt membrane is between 0.5-2μm depending on the length and width of the membrane geometry to obtain an acceptable value of spring constant of the membrane.
Figure 2
Cross-section and top view of a typical RF MEMS Capacitive shunt switch and CLR model
IV. A PARAMETRIC MODEL OF MEMS CAPACITIVE SWITCH
Published example of the electromagnetic model which shows shunt capacitive MEMS switch consists of a thin metal membrane bridge suspended over the center conductor of a coplanar waveguide (CPW) [5] and fixed on the ground conductor of the CPW, The parameters L and H indicate the length and the height of the membrane bridge.
The full wave electromagnetic simulation of the switch can be done using a soft High Freq Structure Simulator (HFSS).
In the simulation a box size 1200 x 600 x 600 μm can be used and boundary radiation conditions can imposed on the six sides of the box. After the full wave analysis is performed, S-parameters can extract in the frequency range going from 1 GHz to 60 GHz for different heights of the switch. The substrate can assume to be lossless with relative dielectric constant of 9.8 (correspondent to Alumina). The thickness of the substrate is 600μm and the CPW conductors and MEMS switch can treat as perfect conductors. The central conductor of the CPW can assumed to be coated with silicon nitrate (Si3N4) having relative dielectric constant of 7 and thickness of 0.1 μm. Fig 4.1 (b) presents the first order equivalent circuit model obtained for the capacitive MEMS switch. The parameters of the model can optimized to fit the Sparameter obtained from the full wave Electro-magnetic simulation. Fig 4.2 When the switch is in the on-state, similar procedure can be used and S-parameters can be obtained from the full wave analysis can compared with those obtained using model in Fig. 4.3
Figure 4
S-parameters of the EM simulated and circuit modeled for 300μm long 5μm height switch in the on stateV. CONCLUSIONSThus the RF MEMS switch can be use as a tunable circuit for various applications and the MEMS Switch can provide better performance over solid state switch. Thus the use of RF MEMS switches makes deliberate changes in wireless communication. A parametric model based on full wave analysis capable of predicting the performance in the off state of MEMS capacitive switches can be developed by this way.
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