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Radiative Recombinations in be-Doped Al x Ga 1-x As

Radiative Recombinations in be-Doped Al x Ga 1-x As

Molecular Crystals and Liquid Crystals, 1984
Abstract
Six types of systematic photoluminescence (PL) surements (T ≥ 77 K) were carried out on single crystals of AlxGa1-xAs (x ~ 0.3) undoped or doped with Be by LPE or ion implantation. The multimea-surements approach was employed in order to ascertain that the highest-energy radiative recombination was in fact band-to-band (BTB), and consequently to obtain accurate activation energies. LPE doped

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