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2006
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6 pages
1 file
Active matrix organic light emitting diode (AMOLED) displays are considerably attractive for high brightness, high efficiency and fast response time. Active matrix employing thin Film Transistors (TFTs) allows OLED displays to be larger in size, higher in resolution and lower in power consumption than passive matrix. Especially, low temperature polycrystalline silicon (LTPS) TFT employing excimer laser annealing (ELA) is widely used due to high mobility and high stability. A number of TFT active matrix pixel circuits have been developed in order to compensate for TFT parameter variations due to the fluctuation of excimer laser energy. We discuss various compensation schemes of LTPS TFT pixel circuits.
2007
Rapid progress over the last decade on thin film transistor (TFT) active matrix organic light emitting (AMOLED) displays led to the emergence of high-performance, low-power, low-cost flat panel displays. Despite the shortcomings of the active matrix that are associated with the instability and low mobility of TFTs, the amorphous silicon TFT technology still remains the primary solution for the AMOLED backplane. To take advantage of this technology, it is crucial to develop driving schemes and circuit techniques to compensate for the limitations of the TFTs. The driving schemes proposed in this thesis address these challenges, in which, the sensitivity of the OLED current to the transistor variations is reduced significantly. This is achieved by comparing the data signal with a feedback signal associated with the pixel current by means of an external driving circuit through a column feedback line. Depending on the nature of the feedback signal, (i.e. current or voltage) several pixel circuits and external drivers are proposed. New AMOLED pixel circuits with voltage and current feedback are designed, simulated, fabricated, and tested. The performance of these circuits is analyzed in terms of their stability, settling time, power efficiency, noise, and temperature-dependence. For the pixel circuits with current feedback, an operational transresistance amplifier is designed and implemented in a highvoltage CMOS process. Measurement results for both voltage and current feedback driving schemes indicate less than a 2%/V sensitivity to shifts in the threshold voltage of the TFTs. By using current feedback and an accelerating pulse, programming times less than 50 s are achieved.
MRS Proceedings, 2006
Organic light emitting diode (OLED) displays are a serious competitor to liquid crystal displays in view of their superior picture quality, higher contrast, faster on/off response, thinner profile, and high power efficiency. For large area and/or high-resolution applications, an active matrix OLED (AMOLED) addressing scheme is vital. The active matrix backplane can be made with amorphous silicon (a-Si), polysilicon, or organic technology, all of which suffer from threshold voltage shift and/or mismatch problems, causing temporal or spatial variations in the OLED brightness. In addition, the efficiency of the OLED itself degrades over time. Despite these shortcomings, there has been considerable progress in development of AMOLED displays using circuit solutions engineered to provide stable and uniform brightness. Indeed the design of AMOLED pixel circuits, particularly in low-mobility TFT technologies such as a-Si, is challenging due to the stringent requirements of timing, current m...
Journal of the Society for Information Display
Organic light-emitting device (OLED) technology has recently been shown to demonstrate excellent performance and cost characteristics for use in numerous flat-panel-display (FPD) applications. Universal Display Corp. (UDC), together with its academic partners at Princeton University and the University of Southern California, are developing high-efficiency electrophosphorescent OLEDs, based on triplet emission. These material systems show good lifetimes, and are well suited for the commercialization of low-power-consumption full-color active-matrix OLED displays. Their very high conversion efficiencies may even allow them to be driven by amorphous-silicon backplanes, and in this paper we consider design guidelines for an amorphous-silicon pixel to minimize display non-uniformities due to threshold voltage variations.
IEEE Transactions on Electron Devices, 2001
Two improved four thin-film-transistors (TFTs) pixel electrode circuits based on hydrogenated amorphous silicon (a-Si:H) technology have been designed. Both circuits can provide a constant output current level and can be automatically adjusted for TFT threshold voltage variations. The circuit simulation results indicate that an excellent linearity between the output current and input current can be established. An output current level higher than 5 A can be achieved with these circuits. This current level can provide a pixel electrode brightness higher than 1,000 cd m 2 with the organic light-emitting device (OLED) having an external quantum efficiency of 1%. These pixel electrode circuits can potentially be used for the active-matrix organic light-emitting displays (AM-OLEDs).
Physica B: Condensed Matter, 2009
Low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFT) were prepared for the activematrix organic light-emitting displays (AMOLED). The excimer laser annealing (ELA) recrystallization technique was employed with a chemical solution treatment process to improve the TFT characteristic uniformity and the AMOLED display image quality. The characteristics of the poly-Si array thin films were influenced by XeCl ELA optic module design, TFT device channel direction, and laser irradiation overlap ratio. The ELA system module provided aligned poly-Si grain size of 0.3 mm by the homogenization lens design. The chemical solution treatment process included a dilute HF solution (DHF), ozone (O 3) water, and buffer oxide etching solution (BOE). The PMOS TFT showed better field effect mobility of 87.6 cm 2 /V s, and the threshold voltage was À1.35 V. The off current (I off) was 1.25 Â 10 À11 A, and the on/off current ratio was 6.27 Â 10 6. In addition, the image quality of the AMOLED display was highly improved using the 2T1C structure design without any compensation circuit.
Iee Proceedings-circuits Devices and Systems, 2003
Design considerations are presented for a-Si:H based AMOLED display backplanes, including 2-TFT voltage-programmed and 4-TFT threshold-voltage-shift-resistant current-programmed circuits. The RC equivalent models of voltage-programmed and current-programmed pixels are derived, based on which array simulations are performed. Array size scalability and optimal driving requirements for a-Si:H AMOLED pixels are also presented. The TFTs used were fabricated in-house and the array under consideration is a (320 Â 240) QVGA operating at 60 frames/s.
SID Symposium Digest of Technical Papers
Hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) pixel electrode circuit with a function of current scaling is proposed for active-matrix organic light-emitting displays (AM-OLEDs). In contrast to the conventional current mirror pixel electrode circuit, in this circuit a high data-to-organic light-emitting device (OLED) current ratio can be achieved, without increasing the a-Si:H TFT size, by using a cascade structure of storage capacitors. Moreover, the proposed circuit can compensate for the variations of TFT threshold voltage. Simulation results, based on a-Si:H TFT and OLED experimental data, showed that a data-toOLED current ratio larger than 10 and a fast pixel programming time can be accomplished with the proposed circuit.
IEEE Transactions on Electron Devices, 2001
The integration of active matrix polysilicon TFT technology with organic light emitting diode (OLED) displays has been investigated with the goal of producing displays of uniform brightness. This work identifies and addresses several process integration issues unique to this type of display which are important in achieving bright and uniform displays. Rapid thermal processing (RTP) has been incorporated to achieve uniform polysilicon microstructure, along with silicides to reduce parasitic source and drain series resistance. Using these processes, TFT drain current nonuniformity has been reduced below 5% for 90% of the devices. This work also introduces transition metals to produce low resistance contacts to indium-tin-oxide (ITO) and to eliminate hillock formation in the aluminum metallization. These processes, along with spin on glasses for planarization, have been used to produce functional active matrix arrays for OLED displays. The final array pixel performance is also presented.
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