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    Preliminary: Semiwell

    Uploaded by

    Jordy Israel Melo Pulecio
    SemiWell Semiconductor bi-directional triode thyristor. Suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    Preliminary: Semiwell

    Uploaded by

    Jordy Israel Melo Pulecio
    74 views7 pages
    SemiWell Semiconductor bi-directional triode thyristor. Suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay.

    Original Title

    bt134

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    © Attribution Non-Commercial (BY-NC)

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    SemiWell Semiconductor bi-directional triode thyristor. Suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    74 views7 pages

    Preliminary: Semiwell

    Uploaded by

    Jordy Israel Melo Pulecio
    SemiWell Semiconductor bi-directional triode thyristor. Suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    Preliminary

    SemiWell Semiconductor Bi-Directional Triode Thyristor


    Symbol

    BT134-F

    Features
    Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 4 A ) High Commutation dv/dt

    2.T2

    3.Gate

    1.T1

    General Description
    This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay.

    TO-126

    Absolute Maximum Ratings


    Symbol
    VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG

    ( TJ = 25C unless otherwise specified ) Condition Ratings


    600 TC = 104 C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive t = 10ms 4 25/27 3.1 5 Over any 20ms period 0.5 2 5 - 40 ~ 125 - 40 ~ 150

    Parameter
    Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2 t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature

    Units
    V A A A2 s W W A V C C

    Nov, 2003. Rev. 0

    copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.

    1/6

    BT134-F
    Electrical Characteristics
    Symbol Items
    Repetitive Peak Off-State Current Peak On-State Voltage Gate Trigger Current I -GT3 I+GT3 V+GT1 V-GT1 V-GT3 V+GT3 VGD (dv/dt)c IH Rth(j-c) Gate Trigger Voltage Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Junction to case TJ = 125 C, VD = 1/2 VDRM TJ = 125 C, [di/dt]c = -0.75 A/ms, VD=2/3 VDRM VD = 6 V, RL=10 0.2 5.0 5 1.5 2.5 3.5 V VD = 6 V, RL=10 25 70 1.5 1.5 V

    Conditions
    VD = VDRM, Single Phase, Half Wave TJ = 125 C IT = 5 A, Inst. Measurement

    Ratings Min.

    Typ.

    Max.
    0.5 1.7 25 25

    Unit

    IDRM VTM I+GT1 I -GT1

    mA V

    mA

    V/
    mA C/W

    2/6

    BT134-F
    Fig 1. Gate Characteristics
    10
    1

    Fig 2. On-State Voltage


    10
    2

    VGK = 5V PGK = 5W

    On-State Current [A]

    PG(AV) = 0.5W

    Gate Voltage [V]

    10

    25 IGM=2A
    10
    0

    125 C 10
    0

    25 C

    VGD = 0.2V
    10
    -1

    10
    1

    -1

    10

    10

    10

    0.5

    1.0

    1.5

    2.0

    2.5

    3.0

    Gate Current [mA]

    On-State Voltage [V]

    Fig 3. On State Current vs. Maximum Power Dissipation


    7 6 130

    Fig 4. On State Current vs. Allowable Case Temperature

    Power Dissipation [W]

    = 150

    o o

    5
    360

    = 120 = 90 = 60 = 30
    o

    = 180

    Allowable Case Temperature [ C]

    120

    4 3 2 1 0 0

    : Conduction Angle

    o o

    110

    = 30 = 60 = 90

    o o

    360

    o o o

    = 120

    100 0

    : Conduction Angle

    = 150 o = 180

    RMS On-State Current [A]

    RMS On-State Current [A]

    Fig 5. Surge On-State Current Rating ( Non-Repetitive )

    Fig 6. Gate Trigger Voltage vs. Junction Temperature

    35

    10

    30

    Surge On-State Current [A]

    25 60Hz

    20

    VGT (25 C)

    VGT (t C)

    15 50Hz

    10

    0 0 10

    10

    10

    10

    0.1 -50

    50

    100
    o

    150

    Time (cycles)

    Junction Temperature [ C]

    3/6

    BT134-F
    Fig 7. Gate Trigger Current vs. Junction Temperature Fig 8. Transient Thermal Impedance

    10

    10

    IGT (25 C)

    I I
    1

    + GT1 GT1 GT3

    Transient Thermal Impedance [ C/W]

    IGT (t C)

    10

    + GT3

    0.1 -50

    10 0 50 100
    o

    -1

    150

    10

    -3

    10

    -2

    10

    -1

    10

    10

    10

    Junction Temperature [ C]

    Time (sec)

    Fig 9. Gate Trigger Characteristics Test Circuit

    10

    10

    10

    10


    6V

    6V

    6V


    RG
    6V

    RG

    RG

    RG

    Test Procedure

    Test Procedure

    Test Procedure

    Test Procedure

    4/6

    BT134-F
    TO-126 Package Dimension mm Min. 7.5 10.8 14.2 2.7 3.8 2.5 1.2 2.3 4.6 0.48 0.7 1.4 3.2 0.62 0.86 0.019 0.028 0.055 0.126 1.5 0.047 0.091 0.181 0.024 0.034 Typ. Max. 7.9 11.2 14.7 2.9 Min. 0.295 0.425 0.559 0.106 0.150 0.098 0.059 Inch Typ. Max. 0.311 0.441 0.579 0.114

    Dim. A B C D E F G H I J K L

    A E B

    F 3 C 2 1

    1. Gate 2. T2 3. T1
    J K

    H I

    5/6

    BT134-F
    TO-126 Package Dimension, Forming

    Dim. A B C D E F G H I J K L M

    mm Min. 7.5 10.8 14.2 2.7 3.8 2.5 1.2 2.3 4.6 0.48 0.7 1.4 5.0 3.2 0.62 0.86 0.019 0.028 1.5 0.047 Typ. Max. 7.9 11.2 14.7 2.9 Min. 0.295 0.425 0.559 0.106

    Inch Typ. Max. 0.311 0.441 0.579 0.114 0.150 0.098 0.059 0.091 0.181 0.024 0.034 0.055 0.197 0.126

    A E B

    F 3 C 2 1 M J H I

    1. Gate 2. T2 3. T1
    K

    6/6

    This datasheet has been downloaded from: www.DatasheetCatalog.com Datasheets for electronic components.

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