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Lect. 13: High-Frequency Model of MOSFET (4.8) : What Happens Step Voltages Are Applied To G With S, B Grounded? V

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Lavanya Chandran

1) The document discusses the high-frequency model of MOSFET transistors and how capacitances affect their frequency response. It introduces the unit-gain frequency which is the frequency at which the short-circuit current gain becomes 1. 2) The unit-gain frequency (fT) of a MOSFET depends on its transconductance (gm) and total gate-drain and gate-source capacitances. Higher gm and lower capacitances allow for higher fT. 3) NMOS transistors typically have higher fT than PMOS, with current state-of-the-art NMOS approaching 100 GHz. Homework is assigned to analyze the frequency response of a circuit and determine its

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Lect. 13: High-Frequency Model of MOSFET (4.8) : What Happens Step Voltages Are Applied To G With S, B Grounded? V

Uploaded by

Lavanya Chandran
52 views9 pages
1) The document discusses the high-frequency model of MOSFET transistors and how capacitances affect their frequency response. It introduces the unit-gain frequency which is the frequency at which the short-circuit current gain becomes 1. 2) The unit-gain frequency (fT) of a MOSFET depends on its transconductance (gm) and total gate-drain and gate-source capacitances. Higher gm and lower capacitances allow for higher fT. 3) NMOS transistors typically have higher fT than PMOS, with current state-of-the-art NMOS approaching 100 GHz. Homework is assigned to analyze the frequency response of a circuit and determine its

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1) The document discusses the high-frequency model of MOSFET transistors and how capacitances affect their frequency response. It introduces the unit-gain frequency which is the frequency at which the short-circuit current gain becomes 1. 2) The unit-gain frequency (fT) of a MOSFET depends on its transconductance (gm) and total gate-drain and gate-source capacitances. Higher gm and lower capacitances allow for higher fT. 3) NMOS transistors typically have higher fT than PMOS, with current state-of-the-art NMOS approaching 100 GHz. Homework is assigned to analyze the frequency response of a circuit and determine its

Copyright:

Attribution Non-Commercial (BY-NC)
Download as PDF, TXT or read online from Scribd
Download as pdf or txt
52 views9 pages

Lect. 13: High-Frequency Model of MOSFET (4.8) : What Happens Step Voltages Are Applied To G With S, B Grounded? V

Uploaded by

Lavanya Chandran
1) The document discusses the high-frequency model of MOSFET transistors and how capacitances affect their frequency response. It introduces the unit-gain frequency which is the frequency at which the short-circuit current gain becomes 1. 2) The unit-gain frequency (fT) of a MOSFET depends on its transconductance (gm) and total gate-drain and gate-source capacitances. Higher gm and lower capacitances allow for higher fT. 3) NMOS transistors typically have higher fT than PMOS, with current state-of-the-art NMOS approaching 100 GHz. Homework is assigned to analyze the frequency response of a circuit and determine its

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Lect. 13: High-Frequency Model of MOSFET (4.

8)
What happens step voltages are applied to G with S, B grounded? VGS VG VGD

It takes time to charge up voltages! capacitive effects between G and S (CGS), G and D (CGD), and many other places

Electronic Circuits 1

High-Speed Circuits and Systems Laboratory

Lect. 13: High-Frequency Model of MOSFET


CGD

Lov,1

Lov,2 Lov=Lov,1+Lov,2
In saturation,

CGS

CGS= 2/3 WLCox + WLovCov (about 20fF for L=1.0m) CGD=WLovCov (about 2fF for L=1.0m) CGS > CGD

Electronic Circuits 1

High-Speed Circuits and Systems Laboratory

Lect. 13: High-Frequency Model of MOSFET


How does a capacitor affect frequency response of a circuit?
vi (t ) vo (t ) dv (t ) = i (t ) = C o R dt dvo (t ) vo (t ) vi (t ) + = dt RC RC If vi (t ) = Vi exp( jt ), vo (t ) = Vo exp( jt ) (why?) Vo = ? Vo exp( jt ) Vi exp( jt ) = RC RC 1 1 Vo ( j + ) = Vi RC RC 1 1 jC Vo = Vi RC = Vi 1 1 j + R+ RC jC j Vo exp( jt ) + Voltage divider with capacitor impedance of 1 ! jC

Consider an RC circuit

What is VO(t)/Vi(t)?

Electronic Circuits 1

High-Speed Circuits and Systems Laboratory

Lect. 13: High-Frequency Model of MOSFET


For any circuit having capacitors and inductors, 1 1 use Z= (or ) for capacitor impedance and Z=j L (or sL) for inductor impedance. jC sC Vo ( ) V ( s) (or o ) = ?; Frequency response, System function, Transfer function Vi ( ) Vi ( s )
1 Vo ( ) 1 1 1 jC = = = (0 = ) 1 RC Vi ( ) R + 1 + j RC 1 + j jC 0 Vo ( ) 1 = 2 Vi ( ) 1+ , Vo ( ) = tan 1 Vi ( ) 0

0 2

Electronic Circuits 1

High-Speed Circuits and Systems Laboratory

Lect. 13: High-Frequency Model of MOSFET


Bode Plots
1 Vo ( ) 1 1 1 jC (0 = ) = = = 1 + j RC 1 + j Vi ( ) R + 1 RC jC 0 Vo ( ) 1 = 2 Vi ( ) 1+ , Vo ( ) = tan 1 Vi ( ) 0

0 2

f3-dB=0/2

Electronic Circuits 1

High-Speed Circuits and Systems Laboratory

Lect. 13: High-Frequency Model of MOSFET


How fast can a MOSFET transistor operate? CGD

CGS Unit-Gain Frequency (ft): Or Mag(Io()/Ii()) = 1 Why Vgs, not vgs? Frequency-domain analysis

Frequency at which magnitude of the short-circuit current gain of CS configuration becomes 1

Electronic Circuits 1

High-Speed Circuits and Systems Laboratory

Lect. 13: High-Frequency Model of MOSFET


How fast can a MOSFET transistor operate?
I 0 = g mVgs Vgs 1 jCgd = g mVgs jCgdVgs g mVgs ( g m >> C gd )

1 1 Vgs = I i || jC gd jCgS I gm 0 = Ii j (C gd + Cgs ) For

1 = Ii j (C gd + C gs )

I0 gm = 1, = Ii C gd + Cgs gm (Unit-gain Frequency) 2 (C gd + Cgs )

Or fT =

How to make MOSFET faster? Which is faster NMOS or PMOS? Current state-of-the-art NMOS has fT approaching 100 GHz.

Electronic Circuits 1

High-Speed Circuits and Systems Laboratory

Lect. 13: High-Frequency Model of MOSFET


How fast can a MOSFET transistor operate?
I 0 = g mVgs Vgs = g mVgs jC gdVgs 1 sC gd g mVgs ( g m >> C gd )

1 1 Vgs = I i || jC gd jC gS I gm 0 = Ii j (Cgd + C gs ) For

1 = Ii j (C gd + Cgs )

I0 gm = 1, = Ii Cgd + C gs gm (Unit-gain Frequency) 2 (Cgd + C gs )

Or fT =

How to make MOSFET faster? Which is faster NMOS or PMOS? Current state-of-the-art NMOS has fT approaching 100 GHz.

Electronic Circuits 1

High-Speed Circuits and Systems Laboratory

Lect. 13: High-Frequency Model of MOSFET


Homework: (Due before Tutorial on 10/17) For the circuit given below, 1. Determine the transfer function Vi()/Vs(). 2. Plot magnitude and phase of Vi(w)/Vs(w) in dB scale (Bode plot). 3. What is the 3-dB frequency? 20K 5pF 80K

Electronic Circuits 1

High-Speed Circuits and Systems Laboratory

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