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    Power Transistor (60V, 3A) : Transistors

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    vdăduică
    This document summarizes the specifications and characteristics of the 2SD2394 power transistor. The transistor has a low typical saturation voltage of 0.3V, excellent DC current gain, and a wide safe operating area. It is packaged in a TO-220FN package and has an average DC current transfer ratio of 100-320. Key electrical characteristics include a collector-emitter saturation voltage of 0.8V max, and an output capacitance of 35pF max when measured at specific conditions.

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    Power Transistor (60V, 3A) : Transistors

    Uploaded by

    vdăduică
    20 views1 page
    This document summarizes the specifications and characteristics of the 2SD2394 power transistor. The transistor has a low typical saturation voltage of 0.3V, excellent DC current gain, and a wide safe operating area. It is packaged in a TO-220FN package and has an average DC current transfer ratio of 100-320. Key electrical characteristics include a collector-emitter saturation voltage of 0.8V max, and an output capacitance of 35pF max when measured at specific conditions.

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    2sd2394

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    This document summarizes the specifications and characteristics of the 2SD2394 power transistor. The transistor has a low typical saturation voltage of 0.3V, excellent DC current gain, and a wide safe operating area. It is packaged in a TO-220FN package and has an average DC current transfer ratio of 100-320. Key electrical characteristics include a collector-emitter saturation voltage of 0.8V max, and an output capacitance of 35pF max when measured at specific conditions.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    20 views1 page

    Power Transistor (60V, 3A) : Transistors

    Uploaded by

    vdăduică
    This document summarizes the specifications and characteristics of the 2SD2394 power transistor. The transistor has a low typical saturation voltage of 0.3V, excellent DC current gain, and a wide safe operating area. It is packaged in a TO-220FN package and has an average DC current transfer ratio of 100-320. Key electrical characteristics include a collector-emitter saturation voltage of 0.8V max, and an output capacitance of 35pF max when measured at specific conditions.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    2SD2394

    Transistors

    Power Transistor (60V, 3A)


    2SD2394
    !Features 1) Low saturation voltage. (Typ. VCE(sat) = 0.3V at IC / IB = 2A / 0.2A) 2) Excellent DC current gain characteristics. 3) Wide SOA (safe operating area). !External dimensions (Units : mm)

    10.0

    4.5

    3.2

    2.8

    15.0 12.0

    8.0 5.0

    1.2

    14.0

    1.3 0.8

    2.54

    2.54
    (1) (2) (3) (1) (2) (3)

    0.75

    2.6

    (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)

    ROHM : TO-220FN

    !Absolute maximum ratings (Ta = 25C)


    Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
    Single pulse, Pw=100ms

    Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg

    Limits 80 60 7 3 6 2 25 150 55 +150

    Unit V V V A(DC)

    A(Pulse) W W(Tc=25C) C
    C

    !Packaging specifications and hFE


    Type Package hFE Code Basic ordering unit (pieces) 2SD2394 TO-220FN EF 500

    !Electrical characteristics (Ta = 25C)


    Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance
    Measured using pulse current.

    Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VCE(sat) VBE(sat) hFE fT Cob

    Min. 80 60 7 100

    Typ. 8 35

    Max. 10 10 1 0.8 1.5 320

    Unit V V V A A V V V MHz pF IC = 50A IC = 1mA IE = 50A VCB = 60V VEB = 7V IC/IB = 2A/0.2A IC/IB = 2A/0.2A

    Conditions

    VCE/IC = 5V/0.5A VCE = 5V , IE = 0.5A , f = 5MHz VCB = 10V , IE = 0A , f = 1MHz

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