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    6th Sem QP Template

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    Chitra Durai
    This document contains information about an internal assessment test for an Electronics Device course, including: 1) The date of the test is February 20th, 2015 and it is for the subject Electronic Device with code EC6201 for the ECE branch. The test duration is 3 hours and it carries a maximum of 100 marks. 2) The test contains two parts: Part A contains 10 short answer questions carrying 2 marks each for a total of 20 marks. Part B contains 5 long answer questions carrying 16 marks each for a total of 80 marks. 3) The long answer questions in Part B cover topics such as deriving the PN diode current equation from quantitative theory, explaining the energy band diagram of a

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    6th Sem QP Template

    Uploaded by

    Chitra Durai
    31 views2 pages
    This document contains information about an internal assessment test for an Electronics Device course, including: 1) The date of the test is February 20th, 2015 and it is for the subject Electronic Device with code EC6201 for the ECE branch. The test duration is 3 hours and it carries a maximum of 100 marks. 2) The test contains two parts: Part A contains 10 short answer questions carrying 2 marks each for a total of 20 marks. Part B contains 5 long answer questions carrying 16 marks each for a total of 80 marks. 3) The long answer questions in Part B cover topics such as deriving the PN diode current equation from quantitative theory, explaining the energy band diagram of a

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    This document contains information about an internal assessment test for an Electronics Device course, including: 1) The date of the test is February 20th, 2015 and it is for the subject Electronic Device with code EC6201 for the ECE branch. The test duration is 3 hours and it carries a maximum of 100 marks. 2) The test contains two parts: Part A contains 10 short answer questions carrying 2 marks each for a total of 20 marks. Part B contains 5 long answer questions carrying 16 marks each for a total of 80 marks. 3) The long answer questions in Part B cover topics such as deriving the PN diode current equation from quantitative theory, explaining the energy band diagram of a

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    31 views2 pages

    6th Sem QP Template

    Uploaded by

    Chitra Durai
    This document contains information about an internal assessment test for an Electronics Device course, including: 1) The date of the test is February 20th, 2015 and it is for the subject Electronic Device with code EC6201 for the ECE branch. The test duration is 3 hours and it carries a maximum of 100 marks. 2) The test contains two parts: Part A contains 10 short answer questions carrying 2 marks each for a total of 20 marks. Part B contains 5 long answer questions carrying 16 marks each for a total of 80 marks. 3) The long answer questions in Part B cover topics such as deriving the PN diode current equation from quantitative theory, explaining the energy band diagram of a

    Copyright:

    © All Rights Reserved
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    Download as docx, pdf, or txt
    of 2

    2ND Semester B.E. / B.Tech.

    First Internal Assessment Test Jan/Feb 2015


    Sub. Title : Electronic Device

    Date

    : 20.02.2015

    Sub. Code : EC6201

    Branch

    : ECE

    Duration : 3 Hours

    Max. Marks: 100


    Answer all questions
    Part A - (10 x 2 = 20)

    1. State Mass action law.


    2. Write the applications of PN diode.
    3. What is diffusion capacitance
    4. Draw V-I characteristics of pn diode
    5. What is Reverse saturation current
    6. What is Early effect in CB configuration and give its consequences?
    7. Draw the h-parameter equivalent circuit of a CE ,CB &CC BJT configuration
    8. Draw the symbol of multi emitter NPN Transistor
    9.

    In order to operate a transistor in the active region, what kind of biasing is given to
    the junctions?

    10. If a transistor has a of 0.97 find the value of . If =200, find the value of .
    Part B - (5 x 16 = 80Marks)
    11.a. Derive the PN Diode current equation from the quantitative theory of diode currents. (16)
    OR
    11 (b) (i) Explain the operation of PN junction under reverse bias condition with its characteristics.
    (10)
    (ii) The voltage across the silicon diode at room temperature 300K IS 0.71V and a current of
    2.5mA flows through it.calculate the reverse saturation current. Assume =2 for silicon VT=26mV.
    (6)

    12. (a)

    Explain the energy band diagram of PN junction diode under Zero Bias condition and
    derive the expression for the diffusion potential.
    (16)
    Or
    12 (b)i. Explain details about the switching characteristics on PN diode with neat Sketch.
    (10)
    ii. Explain the drift and diffusion currents for PN diode.
    (6)
    13. (a) Explain the principle and operation of CE transistor configurations. Compare CB,CC and
    CB configuration.
    (16)
    OR
    (b) Explain the operation of NPN transistor. With neat sketch explain the input and output
    characteristics of CB configuration.
    (16)

    14. (a) Explain in detail about the Ebers Moll model

    (16)

    OR
    14. (b) Explain in detail about the hybrid model.

    (16)

    15. (a)(i) With neat diagram explain the Junction Breakdown in PN junction Diode
    (6)
    (ii) Derive the Expression for Space charge width under forward bias condition and neatly
    sketch the charge density, electric field intensity and potential energy barriers at the junction.
    (10)
    OR
    15 (b) (i). Explain in detail about the Gummel Poon model.
    (ii)Give the relationship between , and of a transistor

    (10)
    (6)

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