Driving Power MOSFETs in High-Current, Switch Mode Regulators
Author:
Abid Hussain, Microchip Technology, Inc.
QG QGS
The low on-resistance and high current carrying capability of power
MOSFETs make them preferred switching devices in SMPS power supply design. However, designing with these devices is not as straightforward as with their bipolar counterparts. Unlike bipolar transistors, power MOSFETs have a considerable gate capacitance that must be charged beyond the threshold voltage, VGS(TH), to achieve turn-on. The gate driver must provide a high enough output current to charge the equivalent gate capacitance, CEI, within the time required by the system design.
VGS(TH)
HOW MUCH GATE CURRENT?
The most common error in calculating gate current is confusing the MOSFET input capacitance, CISS, for CEI and applying the equation....
QOD
VGS, Gate-to-Source Voltage (V)
DRIVING THE MOSFET
QGD
QG, Total Gate Charge (nC)
FIGURE 1: Gate charge characteristics.
In equation form:
I = C(dv/dt) QG = (CEI)(VGS) to calculate the required peak gate current. CEI is actually much higher, and must be derived from the MOSFET manufacturers total gate charge, QG, specifications.
and IG = QG/t(transition)
The total gate charge, QG, that must be dispensed into the equivalent gate capacitance of the MOSFET to achieve turn-on is given as: QG = QGS + QGD + QOD where: QG is the total gate charge QGS is the gate-to-source charge QGD is the gate-to-drain Miller charge QOD is the overdrive charge after charging the Miller capacitance. The curve of Figure 1 is typical of those supplied by MOSFET manufacturers. Notice that in order to achieve strong turn-on, a VGS well above that required to charge CEI (and well above VGS(TH)) is required. The equivalent gate capacitance is determined by dividing a given VGS into the corresponding total gate charge. The required gate drive current (for a transition within a specified time) is determined by dividing the total gate charge by the desired transition time.
2002 Microchip Technology, Inc.
where: QG is the total gate charge, as defined above CEI is the equivalent gate capacitance VGS is the gate-to-source voltage IG is the gate current required to turn the MOSFET on in time period t(transition) t(transition) is the desired transition time For example: Given:
Single Single Single Single Dual Dual Single Single Quad NAND Quad AND Quad AND with INV Dual Dual Dual Dual Single Single Single Single Single Single Single Single Dual Dual Single Single Single Single Single Single
TABLE 1B: MOSFET die size vs. suggested drive family.
WHY DEDICATED MOSFET DRIVERS?
Traditional SMPS controllers have on-board drivers suitable for some applications. Typically, these drivers have peak output currents of 1A or less, limiting their scope of applications. In addition, the heat generated in these drivers causes the on-chip reference voltage to change. The need for smarter power supplies are forcing SMPS controllers to grow in sophistication. Many newer SMPS controllers are fabricated in smaller geometry CMOS process technologies, precluding the use of high voltage (i.e. voltages greater than 12V). In such cases, the external MOSFET driver also acts as a level shifter, translating TTL-compatible levels to MOSFET drive voltages. A device like the TC4427A for example, furnishes a rail-torail output voltage swing (from a maximum VDD of 18V) from an input swing of VIL = 0.8V and VIH = 2.4V. Latch-up immunity is another consideration. Latch-up immunity is particularly important in that the driven MOSFETs typically drive inductive circuits that generate significant kickback currents. MOSFET drivers like the TC4427 can withstand as much as 0.5A of reverse output current without damage or upset. Protection against shoot-through current is still another consideration, especially in higher speed SMPS designs. Shoot through currents are usually caused by excessively long driver rise, fall or propagational delay times; causing both the high side and low side MOSFETs to be on for a brief instant. Current shoots through (hence the name) from the supply input to ground, significantly degrading the overall supply efficiency. The use of dedicated MOSFET drivers minimizes this problem in two ways: 1.
MOSFET gate drive rise and fall times must be symmetrical,
and as short as possible. A driver like the TC4427 has a specified tR and tF of approximately 19nsec into a 1000pF load. A higher peak output current driver may be selected to achieve more aggressive rise and fall times if so desired.
2002 Microchip Technology, Inc.
2.
The propagational delay times through the driver must be
short (and matched for higher speed designs) to ensure symmetrical turn-on and turn-off delays of both the high side and low side MOSFET.
The TC4427A for example, has rising and falling edge propagation delay times matched to within 2nsec (see Figure 2). These delays track each other with both voltage and temperature. Microchips 2nsec skew is among the best available (competing devices have skews at least 4 times larger; drivers integrated on board the SMPS controller are worse yet). These concerns (and related cost and reliability concerns) usually point in the direction of an external, dedicated driver, as opposed to an integrated or external discrete component driver solution.
TYPICAL APPLICATIONS Portable Computer Supply One common application that exploits the design benefits of dedicated MOSFET drivers is a switching power supply for portable systems, such as those found in notebook computer applications. The circuit topology of a high efficiency, synchronous buck converter is shown in Figure 3. It accepts an input voltage range of 5V to 30V to accommodate AC/DC adapters (14V to 30V) or a battery supply (7.2V to 10.8V). The TC1411N acts as a low side driver, and is powered from a +5V supply to minimize turn-off delay due to gate "overdrive charge." The high side driver in Figure 3 is a TC4431, which has a peak output current of 1.5A. The TC1411N has a peak output current capability of 1A. They can drive MOSFETs capable of 10A continuous drain current in 30nsec.
DS00786A-page 3
AN786 Desktop PC Power Supply
SUMMARY
Desktop power supplies also benefit from the use of dedicated
MOSFET drivers (Figure 4). The synchronous stepdown converter shown is common for CPUs requiring greater than 6A of DC current. It also accommodates custom voltages not accommodated by the current silver box supplies. Efficiency is not as large a concern, since this supply is line-powered.
Power MOSFETs are desirable as switching elements in SMPS
designs because of their low on-resistance and high current carrying capability.
The topology shown is simpler than that of Figure 3. The TC4428A
serves as a high-side/low-side driver powered from the same VDD. N-Channel MOSFETs are used to save cost. The TC4428A has sufficient output current to drive a 10A (continuous drain current) MOSFET active in 25nsec.
5V
VIH = 2V VIL = 1V GND
Using dedicated MOSFET drivers results in a more optimized
SMPS design. Drivers integrated on-board the SMPS controller are advantageous only for low sophistication, low output power designs. External drivers fashioned from discrete active and passive components have neither the repeatable high performance, nor the low cost of a dedicated monolithic driver circuit. Dedicated drivers like those offered by Microchip feature fast rise, fall and delay times, and are available in a wide variety of topologies to suit virtually every application.
FIGURE 2: Matched delay times of the TC4426A reduce overlap times resulting in reduced shoot-through currents.
DS00786A-page 4
2002 Microchip Technology, Inc.
AN786 VDD (5V 30V)
+5V/+3V
OUT H
TC4431
TTL PWM Signal
P-Channel MOSFET Inductor
PWM Controller
VOUT (CPU VCC)
+5V
OUT L
TTL PWM Signal
N-Channel MOSFET
TC1411N
+ Schottky Diode
FB
Output Capacitance
FIGURE 3: Portable CPU power supply.
VDD1 (+12V)
+5V/+3V
VDD (+5V)
TTL PWM Signal
OUT H
N-Channel MOSFET Inductor
PWM Controller
OUT L
VOUT
TC4428A
TTL PWM Signal
FB
N-Channel MOSFET
+ Schottky Diode
Output Capacitor
FIGURE 4: Desktop CPU power supply.
2002 Microchip Technology, Inc.
DS00786A-page 5
AN786 NOTES:
DS00786A-page 6
2002 Microchip Technology, Inc.
AN786
Information contained in this publication regarding device
applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchips products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights.
Trademarks The Microchip name and logo, the Microchip logo, FilterLab, KEELOQ, microID, MPLAB, PIC, PICmicro, PICMASTER, PICSTART, PRO MATE, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, MXDEV, PICC, PICDEM, PICDEM.net, rfPIC, Select Mode and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. 2002, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper.
Microchip received QS-9000 quality system certification
for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999. The Companys quality system processes and procedures are QS-9000 compliant for its PICmicro 8-bit MCUs, KEELOQ code hopping devices, Serial EEPROMs and microperipheral products. In addition, Microchips quality system for the design and manufacture of development systems is ISO 9001 certified.
2002 Microchip Technology, Inc.
DS00786A-page 7
M WORLDWIDE SALES AND SERVICE AMERICAS
ASIA/PACIFIC
Corporate Office
Australia
2355 West Chandler Blvd.
Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: 480-792-7627 Web Address: http://www.microchip.com
Microchip Technology Australia Pty Ltd
Suite 22, 41 Rawson Street Epping 2121, NSW Australia Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
Rocky Mountain
China - Beijing
2355 West Chandler Blvd.
Chandler, AZ 85224-6199 Tel: 480-792-7966 Fax: 480-792-7456
Microchip Technology Consulting (Shanghai)
Co., Ltd., Beijing Liaison Office Unit 915 Bei Hai Wan Tai Bldg. No. 6 Chaoyangmen Beidajie Beijing, 100027, No. China Tel: 86-10-85282100 Fax: 86-10-85282104
Atlanta 500 Sugar Mill Road, Suite 200B Atlanta, GA 30350 Tel: 770-640-0034 Fax: 770-640-0307
Boston 2 Lan Drive, Suite 120 Westford, MA 01886 Tel: 978-692-3848 Fax: 978-692-3821
Chicago 333 Pierce Road, Suite 180 Itasca, IL 60143 Tel: 630-285-0071 Fax: 630-285-0075
Los Angeles 18201 Von Karman, Suite 1090 Irvine, CA 92612 Tel: 949-263-1888 Fax: 949-263-1338
China - Chengdu Microchip Technology Consulting (Shanghai) Co., Ltd., Chengdu Liaison Office Rm. 2401, 24th Floor, Ming Xing Financial Tower No. 88 TIDU Street Chengdu 610016, China Tel: 86-28-6766200 Fax: 86-28-6766599
China - Fuzhou Microchip Technology Consulting (Shanghai) Co., Ltd., Fuzhou Liaison Office Unit 28F, World Trade Plaza No. 71 Wusi Road Fuzhou 350001, China Tel: 86-591-7503506 Fax: 86-591-7503521
China - Shanghai Microchip Technology Consulting (Shanghai) Co., Ltd. Room 701, Bldg. B Far East International Plaza No. 317 Xian Xia Road Shanghai, 200051 Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
China - Shenzhen
150 Motor Parkway, Suite 202
Hauppauge, NY 11788 Tel: 631-273-5305 Fax: 631-273-5335
Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office Rm. 1315, 13/F, Shenzhen Kerry Centre, Renminnan Lu Shenzhen 518001, China Tel: 86-755-2350361 Fax: 86-755-2366086
San Jose
Hong Kong
Microchip Technology Inc.
2107 North First Street, Suite 590 San Jose, CA 95131 Tel: 408-436-7950 Fax: 408-436-7955
Microchip Technology Hongkong Ltd.
Unit 901-6, Tower 2, Metroplaza 223 Hing Fong Road Kwai Fong, N.T., Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431
New York
Toronto 6285 Northam Drive, Suite 108 Mississauga, Ontario L4V 1X5, Canada Tel: 905-673-0699 Fax: 905-673-6509
India Microchip Technology Inc. India Liaison Office Divyasree Chambers 1 Floor, Wing A (A3/A4) No. 11, OShaugnessey Road Bangalore, 560 025, India Tel: 91-80-2290061 Fax: 91-80-2290062
Japan Microchip Technology Japan K.K. Benex S-1 6F 3-18-20, Shinyokohama Kohoku-Ku, Yokohama-shi Kanagawa, 222-0033, Japan Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Korea Microchip Technology Korea 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku Seoul, Korea 135-882 Tel: 82-2-554-7200 Fax: 82-2-558-5934
Singapore Microchip Technology Singapore Pte Ltd. 200 Middle Road #07-02 Prime Centre Singapore, 188980 Tel: 65-6334-8870 Fax: 65-6334-8850
EUROPE Denmark Microchip Technology Nordic ApS Regus Business Centre Lautrup hoj 1-3 Ballerup DK-2750 Denmark Tel: 45 4420 9895 Fax: 45 4420 9910
France Microchip Technology SARL Parc dActivite du Moulin de Massy 43 Rue du Saule Trapu Batiment A - ler Etage 91300 Massy, France Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
