2SK3679-01MR 200304

FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET

Super FAP-G Series Outline Drawings [mm]
Features TO-220F

High speed switching

Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Ratings Unit
Drain-source voltage V DS 900 V
VDSX *5 900 V
Continuous drain current ID ±9 A Equivalent circuit schematic
Pulsed drain current ID(puls] ±36 A
Gate-source voltage VGS ±30 V Drain(D)
Repetitive or non-repetitive IAR *2 9 A
Maximum Avalanche Energy EAS *1 287.7 mJ
Maximum Drain-Source dV/dt dVDS/dt *4 40 kV/µs
Peak Diode Recovery dV/dt dV/dt *3 5 kV/µs
Gate(G)
Max. power dissipation PD Ta=25°C 2.16 W
Tc=25°C 95 Source(S)

Operating and storage Tch +150 °C

temperature range Tstg -55 to +150 °C
Isolation Voltage VISO *6 2 kVrms
*1 L=6.51mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph *2 Tch < =150°C
= -ID, -di/dt=50A/µs, Vcc <
*3 IF < = BVDSS, Tch <= 150°C *4 VDS<= 900V *5 VGS=-30V *6 t=60sec, f=60Hz
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Symbol Test Conditions Min. Typ. Max. Units
Drain-source breakdown voltaget V(BR)DSS ID= 250µA VGS=0V 900 V
Gate threshold voltage VGS(th) ID= 250µA VDS=VGS 3.0 5.0 V
VDS=900V VGS=0V Tch=25°C 25 µA
Zero gate voltage drain current IDSS
VDS=720V VGS=0V Tch=125°C 250
Gate-source leakage current IGSS VGS=±30V VDS=0V 100 nA
Drain-source on-state resistance RDS(on) ID=4.5A VGS=10V 1.22 1.58 Ω
Forward transcondutance gfs ID=4.5A VDS=25V 5 10 S
Input capacitance Ciss VDS =25V 1100 1650 pF
Output capacitance Coss VGS=0V 140 210
Reverse transfer capacitance Crss f=1MHz 8 12
Turn-on time ton td(on) VCC=600V ID=4.5A 25 38 ns
tr VGS=10V 12 18
Turn-off time toff td(off) RGS=10 Ω 50 75
tf 12 18
Total Gate Charge QG V CC=450V 31 46.5 nC
Gate-Source Charge QGS ID=9A 4.5 8
Gate-Drain Charge QGD VGS=10V 11 16.5
Avalanche capability IAV L=6.51mH Tch=25°C 9 A
Diode forward on-voltage V SD IF=9A VGS=0V Tch=25°C 0.90 1.50 V
Reverse recovery time t rr IF=9A VGS=0V 3.2 µs
Reverse recovery charge Qrr -di/dt=100A/µs Tch=25°C 15.5 µC
Thermalcharacteristics
Item Symbol Test Conditions Min. Typ. Max. Units
Rth(ch-c) channel to case 1.316 °C/W
Thermal resistance
Rth(ch-a) channel to ambient 58.0 °C/W
1
2SK3679-01MR FUJI POWER MOSFET
Characteristics

Allowable Power Dissipation Typical Output Characteristics

PD=f(Tc) ID=f(VDS):80 µs pulse test,Tch=25°C
150 14

20V 10V
12 8.0V
125 7.0V
6.5V
10
100

ID [A]
PD [W]

75
6
6.0V

50
4

25 2 VGS=5.5V

0 0
0 25 50 75 100 125 150 0 5 10 15 20

Tc [°C] VDS [V]

Typical Transfer Characteristic Typical Transconductance

ID=f(VGS):80 µ s pulse test,VDS=25V,Tch=25°C gfs=f(ID):80 µ s pulse test,VDS=25V,Tch=25°C

10

10
ID[A]

gfs [S]

1
0.1

0 1 2 3 4 5 6 7 8 9 10 0.1 1 10
VGS[V] ID [A]

Typical Drain-Source on-state Resistance Drain-Source On-state Resistance

RDS(on)=f(ID):80 µ s pulse test,Tch=25°C RDS(on)=f(Tch):ID=4.5A,VGS=10V
1.7 5
VGS=5.5V 6.0V
6.5V

1.6 7.0V
8.0V 4
10V

1.5 20V
RDS(on) [ Ω ]

RDS(on) [ Ω ]

1.4

max.
2
1.3
typ.

1
1.2

1.1 0
0 2 4 6 8 10 12 14 -50 -25 0 25 50 75 100 125 150

ID [A] Tch [°C]

2
2SK3679-01MR FUJI POWER MOSFET

Gate Threshold Voltage vs. Tch Typical Gate Charge Characteristics

7.0
VGS(th)=f(Tch):VDS=VGS,ID=250µ A 14
VGS=f(Qg):ID=9A,Tch=25°C
6.5

6.0 12

5.5 Vcc= 180V

5.0 max. 10 450V
720V
VGS(th) [V]

4.5

4.0 8

VGS [V]
3.5

3.0 min. 6

2.5

2.0 4

1.5

1.0 2

0.5

0.0 0
-50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 45

Tch [°C] Qg [nC]

Typical Capacitance Typical Forward Characteristics of Reverse Diode

1
C=f(VDS):VGS=0V,f=1MHz IF=f(VSD):80 µs pulse test,Tch=25°C
10

10
Ciss
0
10
IF [A]
C [nF]

-1
10
Coss
1

-2
10
Crss

-3
10 0.1
10
0
10
1
10
2 0.00 0.25 0.50 0.75 1.00 1.25 1.50

VDS [V] VSD [V]

Typical Switching Characteristics vs. ID Maximum Avalanche Energy vs. starting Tch
3
t=f(ID):Vcc=600V,VGS=10V,RG=10 Ω 700
E(AS)=f(starting Tch):Vcc=90V
10
IAS=4A

600
tf

500
2
10 IAS=6A
td(off)
400
EAS [mJ]
t [ns]

300 IAS=9A
td(on)
1
10
200
tr

100

0
10 0
-1 0 1
10 10 10 0 25 50 75 100 125 150

ID [A] starting Tch [°C]

3
2SK3679-01MR FUJI POWER MOSFET

Maximum Avalanche Current Pulsewidth

2
IAV=f(tAV):starting Tch=25°C,Vcc=90V
10
Avalanche Current I AV [A]

1 Single Pulse
10

0
10

-1
10

-2
10
-8 -7 -6 -5 -4 -3 -2
10 10 10 10 10 10 10
tAV [sec]

Maximum Transient Thermal Impedance

1
Zth(ch-c)=f(t):D=0
10

0
10
Zth(ch-c) [°C/W]

-1
10

-2
10

-3
10
-6 -5 -4 -3 -2 -1 0
10 10 10 10 10 10 10

t [sec]

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