Ordering number : ENA0778A Ordering number : ENA0778A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4100LS General-Purpose

Switching Device Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS 30 V Drain Current (DC) IDc*1 Limited only by maximum temperature 6 A IDpack*2 Tc=25C (SANYO s ideal heat dissipation condition)*3 5.6 A Drain Current (Pulse) IDP PW=10 s, duty cycle=1% 24 A Allowable Power Dissipation PD 2.0 W Tc=25C (SANYO s ideal heat dissipation condition)*3 33 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *4 EAS 105 mJ Avalanche Current *5 IAV 6 A *1 Shows chip capability *2 Package limited *3 SANYO s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attachi ng the device to water-cooled radiator made of aluminium. *4 VDD=99V, L=5mH, IAV=6A *5 L=5mH, single pulse Marking : K4100 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (h ome appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can d irectly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor

shall they grant any guarantee thereof. If you should intend to use our products for applications outside the s tandard applications of our customer who is considering such use and/or outside the scope of our intended st andard applications, please consult with us prior to the intended use. If there is no consultation or inquir y before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described p roducts as mounted in the customer's products or equipment. To verify symptoms and states that cannot be e valuated in an independent device, the customer should always evaluate and test devices mounted in the cust omer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O2407 TI IM TC-00000936 / 60607QB TI IM TC-00000729 No. A0778-1/5

2SK4100LS Electrical Characteristics at Ta=25C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V 650 V Zero-Gate Voltage Drain Current IDSS VDS=520V, VGS=0V 100 A Gate-to-Source Leakage Current IGSS VGS=30V, VDS=0V 100 nA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3 5 V Forward Transfer Admittance .yfs. VDS=10V, ID=3A 2 4 S Static Drain-to-Source On-State Resistance RDS(on) ID=3A, VGS=10V 1.05 1.35 . Input Capacitance Ciss VDS=30V, f=1MHz 600 pF Output Capacitance Coss VDS=30V, f=1MHz 110 pF Reverse Transfer Capacitance Crss VDS=30V, f=1MHz 24 pF Turn-ON Delay Time td(on) See specified Test Circuit. 18 ns Rise Time tr See specified Test Circuit. 41 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 78 ns Fall Time tf See specified Test Circuit. 28 ns Total Gate Charge Qg VDS=200V, VGS=10V, ID=6A 23 nC Gate-to-Source Charge Qgs VDS=200V, VGS=10V, ID=6A 4.5 nC Gate-to-Drain Miller Charge Qgd VDS=200V, VGS=10V, ID=6A 13 nC Diode Forward Voltage VSD IS=6A, VGS=0V 0.9 1.2 V Package Dimensions unit : mm (typ) 7509-002 16.014.0 3.6 3.57.2 16.1 0.7 2.55 2.55 2.4 1.2 0.9 0.75 0.6 1.2 4.5 2.8 12 3 10.0 3.2 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) Switching Time Test Circuit Avalanche Resistance Test Circuit VDD=200V 10V

VIN RGS=50OS D ID=3A RL=66.7O L 0V =50. RG VIN VOUT PW=10 s 2SK4100LS 10V D.C.=0.5% 50. VDD 0V G 2SK4100LS P.G No. A0778-2/5

2SK4100LS ID VDS 20 ID VGS 20 18 18 16 16 14 14 Static Drain-to-SourceSwitching Time, SW Time --ns Forward Transfer Admittance, .yfs. --S On-State Resistance, RDS(on) -. Drain Current, ID --A Tc=25C 15V 8V10V 6V VGS=5V VDS=20V Tc5C= --225C 75C Static Drain-to-SourceCiss, Coss, Crss --pF Source Current, IS --A On-State Resi stance, RDS(on) -. Drain Current, ID --A 12 10 8 6 12 10 8 6 4 4

2 2 0 0 5 10 15 20 25 30 0 2 4 6 8101214161820 0 Drain-to-Source Voltage, VDS --V IT12403 Gate-to-Source Voltage, VGS --V IT12404 RDS(on) --VGS RDS(on) --Tc 4.0 3.5 ID=3A Tc=75C 25C --25C 10V, ID=3A VGS= 3.5 3.0 2.5 2.0 1.5 1.0 0.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10 --50 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS --V IT12405 Case Temperature, Tc --C IT12406 .yfs.

--ID IS VSD 0.01 0.1 5 7 3 2 2 1.0 5 7 3 2 10 5 7 3 3 2 Tc=75C 25C --25C VGS=0V 10 7 5 3 2 1.0 7 5 3 2 VDS=10V 25C --25C Tc= 75C 23 57 23 57 23 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1.0 10 Drain Current, ID --A IT12407 Diode Forward Voltage, VSD --V IT12408 SW Time --ID Ciss, Coss, Crss --VDS 7 3 VDD=200V VGS=10V

td(off) tf tr td(on) f=1MHz Ciss Coss Crss 2 5 1000 3 7 5 3 2 100 2 100 7 5 3 7 5 3 2 2 10 10 2357 2357 0 1020 304050 0.1 1.0 10 Drain Current, ID --A IT12409 Drain-to-Source Voltage, VDS --V IT12410 No. A0778-3/5

2SK4100LS VGS --Qg A S O VDS=200V ID=6A 0.1 2 3 5 2 3 5 7 2 1.0 3 5 7 2 0.1 1.0 10 10023 5 7 2 3 5 7 72 100035 2 3 5 7 10 s100 s 100ms10ms1ms DC operation 10 3 5 7 IDc(*1)=6A IDpack(*2)=5.6A Operation in this area is limited by RDS(on). IDP=24A PW=10 s *1. Shows chip capability *2. SANYO s ideal heat dissipation condition Tc=25C Single pulse Allowable Power Dissipation, PD --W Gate-to-Source Voltage, VGS --V Allowable Power Dissipation, PD --W Drain Current, ID --A 2 1 0 0.01 0 00 5 10152025 Total Gate Charge, Qg --nC IT12411 Drain-to-Source Voltage, VDS --V IT12412 PD --Ta PD --Tc 40

35 33 30 25 20 15 10 5 0 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta --C IT12337 Case Temperature, Tc --C IT12338 EAS --Ta 0 25 50 75 100 125 150 175 Ambient Temperature, Ta --C IT10478 Avalanche Energy derating factor --% 0 100 80 60 20 40 120 No. A0778-4/5

2SK4100LS Note on usage : Since the 2SK4100LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures th at result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SA NYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability pro ducts, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human liv es, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When d esigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such me asures include but are not limited to protective circuits and error prevention circuits for safe design, re dundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, su ch products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by a ny means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change with out notice due to product/technology improvement, etc. When designing equipment, refer to the "Del ivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for ex ample only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warra nty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semicon ductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits w ith regard to a third party's intellctual property rights which has resulted from the use of the technical inf ormation and products mentioned

above. This catalog provides information as of October, 2007. Specifications and inform ation herein are subject to change without notice. PS No. A0778-5/5