900

IEEE

TRANSACTIONS

ON MICROWAVE

THEORY

AND

TECHNIQUES,

VOL.

MTT-34,

NO.

8, AUGUST 1986

Characteristic Impedance Low-Permittivity

of a Wide Slotline Substrates

on

metahzahon

R. JANASWAMY, STUDENT MEMBER,lEEE, AND D. H. SCHAUBERT, SENIORMEMBER,lEEE

{w ,/ r x

on an electrically Curves

of low dielectric c,=

constant

These results combhted

with those in [1] provide impedance for cnrve fitting, between high-c,

design data
Fig. 1. Geometry of slotline

slotlines.

are presented

2.22, 3.0, 3.8, and 9.8. the present substrates. for

is shown for the characteristic and those fornndas, available based on least-square

in the literature

are presented

the normalized slot wavelength A/XO and the characteristic impedance Z. over the range 0.0015< W\Xo <1.0, 0.006< d/& <0.06, 2.22< t, < 9.8.

TABLE I COMPARISONOF CALCULATED SLOT CHARACTERISTIC IMPEDANCE

c,

z.(n)
m [3] Present 142 160 82 151 101

I. Impedance thoroughly [3]. All tions. where low-e, substrates properties treated

INTRODUCTION of a slotline (shown in Fig. 1) have been of authors [2], to slots on high-c, applicasubstrates, [4][6]. on these feed air

9.6 11.0 130 160 20.0

in the literature work

by a number

the previous

has been confined are typically

(c. > 9.6), which

used for circuit as antemas of slotlines

No data have been reported slotlines substrates have interesting is highly circuits computed of the characteristic

for slots on low-c, impedance

The fields and aperture method region field

~ and (i.e.,

fi field as

in the spectral in the slot),

domain which

pertaining is modeled

to the to the by the

applications

dielectric

regions

of the slotline

can be related

Knowledge

desirable

in designing

a proper

of moments. is expanded

As was done

in [1], the field

in the slot

and accompanying In this paper, tic impedance formulated for [7]. the eigenpair The slot

for these antennas. data are presented domain, for the characterisThe problem equation and in es the is substrates.

ZO for slots on low-c, (X, e ), where

in the spectral is solved from

and the eigenvalue Galerkins is calculated

X is the slot wavelength 20

n=O

the slot field, spectral domain II.

by using the spectral impedance the slot field.

method
e,; = () 7rw 1 m 2 2

2x (-) w 2x= ~ ~=o,l, . . .

characteristic

(4)

FORMULATION NUMERICAL

AND

RESULTS

The characteristic is defined as [2]

impedance

20 of the slotline

shown in Fig. 1

zo=~
where ~. is the voltage

(1)

Pf
electric field
=

=(+)l-(~)u=m-l(~) =12 )
where second The found ~, and ~, are Chebyshev polynomials of the first and kind, Fourier readily respectively. transforms in closed form of the above as [8] basis functions can be z:=(l)n.J2.

across the slot in the plane of the slot and component 2X(0) transformed variable.
EX as

is given in terms

of the transverse

~ = J_~2 where respect real part the tilde

EX ~X = iy(a)la=o

(2) with

denotes

quantities power

Fourier

to the x-axis, mode)

and a is the transform flow (actually

P is the

of the complex

reaf in this case for

a propagating

along the slot and is given by

()
y with

aW

~=o,l,

...

(6)

dxdy
2~, =j(1)+12m

J2m

aw (-) 2

()
~

rrw

m=l,2,

....

(7)

where EX,Ey, HX, IIy are fields tangential to the z-constant ad * denotes the complex conjugate. The second equality follows from Parsevals theorem.

plane, in (3)

The integration form. However, numerically.

respect to y in (3) can be done in closed on the a variable N is stationary that A converges as reported
E;

the integration and it was found for the longitudinal

must with with

be done respect only for and to one the slot.

The slot wavelength

Manuscript was The ing. IEEE supported authors Log NAG-l-279,

received in part

August by

20, 19S5; NASA

revised

February Research and

24, 1986. Center Computer

This

work Grant

the slot field, basis function ever, more convergence The maximum

Langley

under

field for

in [1]. How-

than

one basis

function

is needed

are with of Number

the Department Amherst, 8608831.

of Electrical MA

Engineer-

University

Massachusetts,

01003.

of the characteristic number IEEE

impedance

20 for a wide

of basis functions

needed for E;

0018 -9480/86/0800-0900$01

.00 ~1986

IEEE

TRANSACTIONS

ON MICROWAVE

THEORY

AND

TECHNIQUES,

VOL.

MTT-34, NO. 8, AUGUST

1986

901

on
/ 600 ~~/ 2 // No 400 // /,/ //// /, +/ /, No ,,0015 2 ,+/ ,003 0059 0044

~om
/~00246C0 /#;/ // ///~ /// /// / ~/ ,~ ///- / ,,=0008 /</ // ,/0 06-

400

200 ;/

/ 200 /

.o~
WIAO
(a) I 1 1 1 1

;-

~ oo~ w/h.
(b)

,/ /
/ ,,
d
N 400 I No

/
,,--

1
, 00040 1

,//j/

/.;/ / // ,-

0005

1
-J

200L

lt

.~
o

.~
o
025 050

1
WIAO
(d)

w/A.
(c)
Fig. 2, Characteristic impedance of slotline as a function (d) of normalized C,= 9.8. slot width. (a) c,=

2,22.

(b)

C,=

3.0,

(c)

c,=

3.8.

during

the computation approached

of Z. was 5 and 3, respectively, one free space wavelength AO.

when the

av = 0.37 percent,

max = 2.2 percent

(at one point)

slot width

Computer programs have been developed to compute A and ZO for a specified c,, AO, and d. As a check of these programs, Table tations widths I shows a comparison and those for d/& c,= for ZO between the present for compuslotlines in [3]. Characteristic 0.0015< W/X. impedances <1.0.

zo=60+369sin[(r~::)nl+
+2.81[1 +131.1
+12.48(1

0.011e,(4.48+ln (1.028 lnc,)m

c,)](

W/d) ln(100d/~0)

have been computed varying over with X/ A.

2.22, 3.0, 3.8, 6.5, and 9.8 and for

Computed values of
are plotted for in Fig. 2. Z. by the normalized impedance

W/d

ZO versus W/X.
Empirical and tie average data which The 0.060. slot wavelength least-square percentage points,

+0.181nt,) c, 2.06+0.85(

(9)

as a parameter

W/d)2

formulas

have been developed These formulas the computed percentage observed Also, where

and the slot characteristic data.

av = 0.67 percent,

max = 2.7 percent 0.075< w/Ao

(at one point) <1.0

given in (8)(15). curve error fitting max, of the absolute are given.

have been obtained

In each case, the

error av and the maximum in a systematic possible, within sample of 120 around d/&< /Xo 1194-0241nc , the region is indicated. 0.006<

0.6%85( ff/xo)O
(1.344+
W/d)

48

the maximum following

error has been observed are all valid

formulas

-00617[191-%lln( 10)
av = 0.69 percent, max = 2.6 percent (at two points, for

W/A.

2.22 <c,

<3.8 <0.075 6.3(

> 0.8) Z, =133 +10.34((, W/d) c?945

0.0015 <W/A.

-1.8)

2+2.87

[2.96+(q

-1.582)2]

~[{ W/d+2.32c,-O.56} {(32.56.67c,)(100d/Ao) 2-1}]12

/Ao

1045-03651nr+

(238.64

8.81(6,+0.95) [ 0.148

loocr

-(684
(8)

.45d/Ao)(~r
1.722)

+1.35)2 W/Ao]2 (11)

.ln(d/XO).

+13.23[(c,

902

IEEE

TRANSACTIONS

ON MICROWAVE

THEORY

AND

TECHNIQUES,

VOL.

MTT-34, NO. 8, AUGUST 1986

av = 1.9 percent, > 0.8)

Imaxl = 5.4 percent 3.8< fr< 9.8

(at three points,

for

W/XO

[4]

E.

L.

Kollberg

et al.,

New FL,

results at Dec. A

on the

tapered 8th

slot IEEE

endfire Int,

antennas Infrared,

on

dielectric Millimeter [5] [6] S. N. Trans. J. F. T. Itoh 1/2 Chalmers [7] [8] Left., vol.

substrate, Waves, and Antennas Prasad

presented Miami, S. Mahapatra,

Conf. aerial, 1983,

1983. new pp. MIC dotline 1983. of slot vol. lines, 2. New Electron. York: slot line, May IEEE thesis, 525-527,

0.0015 <w/A. N/AO = 0.9217 -0.2771nc, +0.0322(

<0.075 W/d) ~ ~,d ~0435)

Propagat., Investigation

vol.

AP-31, of some

Johansson, and 7,

antennas,

M.S.

[
3.65 O.Olln( d/&)
[

1
(12)

University, R. Mittra,

Gothenberg, Dispersion of

Sweden,

characteristics Transforms,

A.

Erdelyi

pp. 364-365, et al., Tables

July 1971.
Integral

4.6 c;~~(9.06 100 W/AO)

McGraw-Hill,

av = 0.6 percent,

Imax 1= 3 percent

(at three

points,

occurs

for

A Broad-Band Homodyne Network Analyzer Binary Phase Modulation

with

W/d >1 and c,> 6.0)

41 225) ~W,d +~~6c .r

_ z,

Abstract cascaded X-band linear

An binary

automatic phase dynamic

homodyne range is given

network which

analyzer operates

system modulation

using and

shifters

is described

over the full

c.+ 2.12)(

ln(lOOd/Ao) (13) (at three points, <1.0 occurs for

with

a high

due to an auxiliary analytic wfdch solution aflows

detection system

technique. equations shifter

A generaf

of the complex

0.753er(d/&J/~~
av = 1.58 percent,
W/d > 1.67)

nonlinear

the use of a coupled

max = 5.4 percent

modulator/phase

structure.

Measurement

results are reported.

0.075< w/Ao
X/XO =1,05 In{
+0.111 +0.139(1

NOMENCLATURE

Bu , B,
O.04C,
W/d

Modulator and lower Modified Transfer

conversion sidebands. modulator function

losses for the first conversion 1.

upper

+1.411

X10-2
-0.146(,)}

(C, 1.421)

2.012(1

Iiu , k, H
c,))(d/Ao)ln(d/AO) (14)

losses in case test; H =

of a coupling
(10.366tr)~~

to phase shifter

of the device under combination IF amplitudes ideally, of H

+0.52

c,ln(14.7

HR

Weighted

linear

of all or a subset V., n =1,. .;, 8,

of the complex for an evaluation system constant.

av = 0.75 percent,
W/A. = 0.075,

Imax I = 3.2 percent

(at two points,

occurs

for

HR = ~H, K ~

d/A.

> 0.03)
+50[tm-(2c,)
27.7)/(100d/Xo

ZO =120.75

3.74.,

0.8]
+ 5))]

K, Ko, i k,, i=l,2,3

System constants. Characteristic of binary loss of PSi phase shift. for of M. input power level. of the signal for the first PS1 in upper and a frequencies. case of phase shifter PSi, i.e.,

.(W/d)

[1 11 +(0.132(,,

Ik, I + insertion
differential

change,

arg { k, } = A@ ~

. in [lOOd/Ao
+14.21 .( w/A. av = 2.0 percent,
W/A. < 0.1).

+ ~~] d/A0 +5.llnc, 13.1)

k,u, k,, Zlu , kl, (15)

Characteristic lower sideband Modified coupling

(10.458c,)(100

characteristic to modulator mixer factors function amplitude

+0.33)2
Imax I = 5.8 percent

P p~ =1,2,3
VM, rs=l,, ..,8

Double-sideband Weighting transfer Complex the eight

for the determination

In the above formula, III.

tm- I(. ) assumes its prin-

H through

HR.
of PSI,

cipal value. CONCLUSION

of the IF output combinations

switching-state

PS2, and PS3.

A spectral-domain Galerkin method is used to compute the characteristic impedance of wide slotlines on low-c, substrates. Empirical formulas have been presented for the slot wavelength and the characteristic impedance over a wide range of slot widths. The data presented here supplement data already available on high-c, substrates.
REFERENCES

Auxiliary

Variables

ii=

Bu+B[

~1 = Bu/B

.klu -t B1/B .kll -klu B[/~

B= BU B1 ~1 = Bu/~ .kl{
U=2Re{ ~}, 1~=2j Im{~},

[1] R.
[2] J.

Janaswamy on vol. Knorr pp. Mariani Tech., low

and

D.

H.

Schaubert, 723-726,

slothnes Tech., B. strips MTT-23, [3] E. A. Theory

permittivity pp. K. Kuchler, Jldy

Dispersion substrates, IEEE Aug. Analysis IEEE Trans. 1985, of

characteristics Trans. Microwave slots and

for

Thriy
Manuscnpt was supported authors Log The received in part are Number with January by the 27, Institut 1986; fiir Bochumi revised HochMarch und 5, 1986. This work vol. the Deutsche D-4630 Forschungsgemeinschaft. Hochstfrequenztechnik, Republic of Germany. Federal

wide

MTT-33, and

coupled Microwave IEEE

coplanar Tech.,

on dielectric

substrate, et al., Slotline

Theory Trans.

541-548, vol.

1975. characteristics, Mtcrowaue

Ruhr-Universitat IEEE

Bochum,

MTT-17,

pp. 1091-1096,

Dec. 1969.

8609060.

0018-9480/86/0800-0902$01.00

01986

IEEE