DISCRETE SEMICONDUCTORS

DATA SHEET

M3D071

BRY62 Silicon controlled switch

Product specication Supersedes data of 1997 Jul 21 1999 Apr 22

Philips Semiconductors

Product specication

Silicon controlled switch

DESCRIPTION Silicon planar PNPN switch in a SOT143B plastic package. It is an integrated PNP/NPN transistor pair, with all electrodes accessible. APPLICATIONS Switching applications. MARKING TYPE NUMBER BRY62 MARKING CODE A51
1 Top view 2
MSB014

BRY62

PINNING PIN 1 2 3 4 anode gate anode cathode cathode gate DESCRIPTION

handbook, 2 columns 4

3 a ag kg k
MBB068

Fig.1 Simplified outline (SOT143B) and symbol.

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL NPN transistor VCBO VCER VEBO IC ICM IE IERM VCBO VCEO VEBO IE IERM collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current emitter current (DC) repetitive peak emitter current tp = 10 s; = 0.01 open emitter open base open collector tp = 10 s; = 0.01 open emitter RBE = 10 k open collector note 1 note 2 70 70 5 175 175 175 2.5 70 70 70 175 2.5 V V V mA mA mA A PARAMETER CONDITIONS MIN. MAX. UNIT

PNP transistor collector-base voltage collector-emitter voltage emitter-base voltage emitter current (DC) repetitive peak emitter current V V V mA A

1999 Apr 22

Philips Semiconductors

Product specication

Silicon controlled switch

BRY62

SYMBOL Combined device Ptot Tstg Tj Tamb Notes

PARAMETER

CONDITIONS Tamb 25 C

MIN.

MAX.

UNIT

total power dissipation storage temperature junction temperature operating ambient temperature

250 +150 150 +150

mW C C C

65 see Fig.14 65

1. Provided the IE rating is not exceeded. 2. During switching on, the device can withstand the discharge of a capacitor of a maximum value of 500 pF. This capacitor is charged when the transistor is in cut-off condition, with a collector supply voltage of 160 V and a series resistance of 100 k. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS VALUE 500 UNIT K/W

thermal resistance from junction to ambient in free air

CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL NPN transistor ICER IEBO VCEsat VBEsat hFE fT Cc Ce ICEO IEBO hFE VAK collector cut-off current emitter cut-off current collector-emitter saturation voltage base-emitter saturation voltage DC current gain transition frequency collector capacitance emitter capacitance VCE = 70 V; RBE = 10 k VCE = 70 V; RBE = 10 k; Tj = 150 C IC = 0; VEB = 5 V; Tj = 150 C IC = 10 mA; IB = 1 mA IC = 10 mA; IB = 1 mA IC = 10 mA; VCE = 2 V IC = 10 mA; VCE = 2 V; f = 100 MHz IE = ie = 0; VCB = 20 V; f = 1 MHz IC = ic = 0; VEB = 1 V; f = 1 MHz IB = 0; VCE = 70 V; Tj = 150 C IC = 0; VEB = 70 V; Tj = 150 C IE = 1 mA; VCB = 5 V RKG-K = 10 k IA = 50 mA; IAG = 0 IA = 50 mA; IAG = 0; Tj = 55 C IA = 1 mA; IAG = 10 mA IH holding current RKG-K = 10 k; IAG = 10 mA; VBB = 2 V; (see Fig.5) 3 1.4 1.9 1.2 1 V V V mA 50 100 3 100 10 10 500 900 5 25 10 10 15 MHz pF pF A A nA A A mV mV PARAMETER CONDITIONS MIN. MAX. UNIT

PNP transistor collector cut-off current emitter cut-off current DC current gain

Combined device forward on-state voltage

1999 Apr 22

Philips Semiconductors

Product specication

Silicon controlled switch

BRY62

SYMBOL Switching times ton

PARAMETER

CONDITIONS VKG-K = 0.5 to 4.5 V; RKG-K = 1 k; see Figs 6 and 7 VKG-K = 0.5 to 0.5 V; RKG-K = 10 k RKG-K = 10 k; see Figs 8 and 9

MIN.

MAX.

UNIT s s s

turn-on time

0.25 1.5 15

toff

turn-off time

a (anode) (e2 ) e2
handbook, halfpage

PNP transistor

ag (anode gate) (c 1,b 2) b 1,c 2

P N P

kg (cathode gate) (b1 ,c 2)

NPN transistor e1 k (cathode) (e1 )

MBB680

N P N
MBB681

c 1,b 2

Fig.2 Two transistor equivalent circuit.

Fig.3 PNPN silicon controlled switch structure.

1999 Apr 22

Philips Semiconductors

Product specication

Silicon controlled switch

BRY62

handbook, halfpage

a IA IKG IAG ag VAK IK k

MBB682

handbook, halfpage

IA a RKG-K VBB kg k IAG ag DUT

kg

MBB683

Fig.4 Silicon controlled switch symbol.

Fig.5 Equivalent test circuit for holding current.

i handbook, halfpage 4.5

V (V)

MBB687

90 %
handbook, halfpage

+12 V

2.7 k 16 k RKG-K VAK +50 V 0 0.5 10 % time

VI VAG-K
MBB685

ton

time

Fig.7 Fig.6 Test circuit for turn-on time.

Pulse duration increased until dashed curve disappears.

1999 Apr 22

Philips Semiconductors

Product specication

Silicon controlled switch

BRY62

VAK halfpage handbook, (V) +12 V handbook, halfpage 1 k C VAK mercury wetted contact RKG-K tq 0 C < Copt 2.7 k +50 V 16 k 12 C = Copt

MBB686

time

MBB684

12

Fig.9 Fig.8 Test circuit for turn-off time.

Capacitance increased until C = Copt dashed curve disappears.

MBB584

handbook, halfpage

1.2

MBB583

handbook, halfpage

1.8

hFE X 0.8 2V VAG-K = 5 V

h FE X 1.4

0.4

1.0

0 0 50 IAG (mA) 100

0.6 0 50 100 Tamb ( o C) 150

X is the value of hFE at IC = 10 mA; VAG-K = 2 V; Tamb = 25 C.

X is the value of hFE at IAG = 10 mA; VAG-K = 2 V; Tamb = 25 C.

Fig.10 Normalized DC current gain as a function of anode gate current.

Fig.11 Normalized DC current gain as a function of ambient temperature.

1999 Apr 22

Philips Semiconductors

Product specication

Silicon controlled switch

BRY62

MBB581

handbook, halfpage

1.2

handbook, halfpage

1.2

MBB587

IH VAK X 1 X 1.1

0.8 0.9

0.6 50 0 50 100 150 Tamb ( o C)

0.8 50

50

100 150 Tamb (oC)

X is the value of VAK at IC = 10 mA; IAG = 10 mA; IA = 1 mA; VBB = 2 V; RKG-K = 10 k; Tamb = 25 C.

X is the value of IH at IC = 10 mA; IAG = 10 mA; VBB = 2 V; Rkg-K = 10 k; Tamb = 25 C.

Fig.12 Normalized anode-cathode voltage as a function of ambient temperature.

Fig.13 Normalized holding current as a function of ambient temperature.

MBB580

handbook, halfpage

300

P tot (mW) 200

100

0 0 50 150 Tamb ( o C) 150

Fig.14 Power derating curve.

1999 Apr 22

Philips Semiconductors

Product specication

Silicon controlled switch

PACKAGE OUTLINE Plastic surface mounted package; 4 leads

BRY62

SOT143B

y v M A HE

e bp w M B

3
Q

A1 c

1
b1 e1

2
Lp detail X

1 scale

2 mm

DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1

OUTLINE VERSION SOT143B

REFERENCES IEC JEDEC EIAJ

EUROPEAN PROJECTION

ISSUE DATE 97-02-28

1999 Apr 22

Philips Semiconductors

Product specication

Silicon controlled switch

DEFINITIONS Data Sheet Status Objective specication Preliminary specication Product specication Limiting values

BRY62

This data sheet contains target or goal specications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains nal product specications.

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specication. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

1999 Apr 22

Philips Semiconductors

Product specication

Silicon controlled switch

NOTES

BRY62

1999 Apr 22

10

Philips Semiconductors

Product specication

Silicon controlled switch

NOTES

BRY62

1999 Apr 22

11

Philips Semiconductors a worldwide company

Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 62 5344, Fax.+381 11 63 5777

For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Philips Electronics N.V. 1999

Internet: http://www.semiconductors.philips.com

SCA63

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

115002/00/03/pp12

Date of release: 1999 Apr 22

Document order number:

9397 750 05727

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.