Nmos Fabrication Process

NMOS FABRICATION PROCESS
Step 1 Processing is carried on single crystal silicon of high purity on which required P impurities are introduced as crystal is grown. Such wafers are about 75 to 150 mm in diameter and 0.4 mm thick and they are doped with say boron to impurity concentration of 10 to power 15/cm3 to 10 to the power 16 /cm3.
Clean substrate
Step 2 A layer of silicon dioxide (SiO2) typically 1 micrometer thick is grown all over the surface of the wafer to protect the surface, acts as a barrier to the dopant during processing, and provide a generally insulating substrate on to which other layers may be deposited and patterned.
Silicon dioxide(SiO2) grown at the surface of the wafer
Step 3 The surface is now covered with the photoresist which is deposited onto the wafer and spun to an even distribution of the required thickness.
substrate surface covered with photoresist
Step 4 The photo resist layer is then exposed to ultraviolet light through masking which defines those regions into which diffusion is to take place together with transistor channels. The opaque region at the mask allow the ultraviolet light to hit the surface of the photoresist at the substrate and making it dissolve.
Photo-mask is in position for patterning
UV light exposed to the substrate
Photoresist surface that hit by the UV light dissolve
The uncovered dissolve while the covered region remain
Step 5 The substrate now is ready to be etched to remove the remaining photoresist at the substrate and to create an opening at the substrate. In this process, Hydrofluoric acid is used as its etch acid.
hydrofluoric acid used as etch acid
the remaining photoresist removed and an opening to the substrate created.
Step 6 A layer of the thin oxide is form SiO2 (0.1 micrometer typical) is grown over the entire chip surface at high temperature.
A layer of thin oxide grown at the surface of the substrate
Step 7 The polysilicon layer consists of heavily doped polysilicon deposited at the surface of the substrate by chemical vapor deposition (CVD).
Polysilicon is deposited at the surface of the substrate.
Step 8 Photoresist is done for the second time at the surface of the substrate.
Substrate is coated with photoresist
Step 9 The photolithography process also done for the second time. The process is done to create a new pattern to make a polysilicon gate at the center of the substrate.
Photo-mask is in position for patterning
Step 10 The substrate is now etch with hydrofluoric acid to remove the remaining photoresist and polysilicon. As a result , a polysilicon gate is formed at the center of the substrate.
hydrofluoric acid used as etch acid
polysilicon gate created
Step 11 In this process, Substrate is bombarded by an amount of arsenic or phosphorus electron to create N region to form drain and source.
Arsenic or phosphorus ion bombarded at the substrate.
N region formed at the substrate representing source and drain
Step 12 After the ion implantation done, the annealing process is conducted to repair the single crystal structure of the substrate and active the dopant.
The annealing process done to repair the single crystal structure
Step 13 Oxidation process is conducted once more to grow an insulating oxide at the substrate
The growth of insulating oxide
Step 14 Photoresist is conducted once more at the surface of the substrate.
Photoresist coated the substrate
Step 15
Another photolithography is done to create an opening to metallization process
Masking process
Step 16
The substrate is now etched remove the remaining photoresist. As a result creating an opening for metallization process.
Etching process to remove photoresist and create an opening
An opening created through etching
Step 17 The substrate then has metal (aluminum) deposited over its surface to a thickness typically of 1 micrometer. Aluminum evaporated to cover surface. This metal layer is then masked and etched to form the required interconnection pattern.
Aluminum evaporated to cover the surface of the surface
Aluminum etched to form Metal contact
Step 18 Then passivation layer is created with an oxide layer to protect against contamination and increase electrical stability at the substrate.
The substrate then coated by the passivation layer

Nmos Fabrication Process

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NMOS FABRICATION PROCESS

Silicon dioxide(SiO2) grown at the surface of the wafer

substrate surface covered with photoresist

Photo-mask is in position for patterning

UV light exposed to the substrate

Photoresist surface that hit by the UV light dissolve

The uncovered dissolve while the covered region remain

hydrofluoric acid used as etch acid

the remaining photoresist removed and an opening to the substrate created.

A layer of thin oxide grown at the surface of the substrate

Polysilicon is deposited at the surface of the substrate.

Substrate is coated with photoresist

Photo-mask is in position for patterning

UV light exposed to the substrate

Photoresist surface that hit by the UV light dissolve

The uncovered dissolve while the covered region remain

hydrofluoric acid used as etch acid

polysilicon gate created

Arsenic or phosphorus ion bombarded at the substrate.

N region formed at the substrate representing source and drain

The annealing process done to repair the single crystal structure

The growth of insulating oxide

Step 14 Photoresist is conducted once more at the surface of the substrate.

Photoresist coated the substrate

Another photolithography is done to create an opening to metallization process

UV light exposed to the substrate

Photoresist surface that hit by the UV light dissolve

The uncovered dissolve while the covered region remain

Etching process to remove photoresist and create an opening

An opening created through etching

Aluminum evaporated to cover the surface of the surface

Aluminum etched to form Metal contact

The substrate then coated by the passivation layer

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