101164

SILICON PIN DIODES
High voltage PIN diodes

MICROWAVE
HIGH VOLTAGE PIN DIODES
Applications
Characteristics
These devices are most often used to control

Radio Frequency (RF) and microwave signals.
Typically, high-voltage PIN diodes are found in
high power switches and phase shifters.
The controlling element of a PIN diode is its

Intrinsic (l) layer. The diode itself is a sandwich,
i.e. a high resistivity l layer between highly
doped layers of P and N materials. With
negative bias on the l layer, the PIN diode
exhibits very high parallel resistance, e.g. acting
as a switch in the OFF position. A positive bias
causes the diode to conduct, with very low
series resistance. Certain applications impose
specific objectives on diode construction (e.g.
in the HF and VHF band, low signal distortion
can be achieved with high Minority Carrier
TEMEX COMPONENTS high-voltage PIN diode

products are designed for very high reliability,
high power handling capabilities, high
isolation, and low signal distortion, especially in
the HF and VHF bands. High-power multithrow
switch modules are available for frequencies in
the 1 MHz to 1 GHz range.
Lifetime
All high-voltage PIN diode products can be
configured on chips or in various packages: e.g.
series, shunt, flat mount, stud mount, surface
mount (SMD) and (on request) non-magnetic.
l).
1-17
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex-components.com
SILICON PIN DIODES

MICROWAVE
Silicon PIN diodes for switching & phase shifting applications

(medium & high power)
Description
This series of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa
technology. A broad range of products is available, in terms of breakdown voltages, junction
capacitances, and series resistances, to suit a large variety of applications, from 1 MHz to several GHz.
These diodes are available in non-magnetic packages.
Electrical characteristics
CHIP DIODES
Characteristics
at 25C
Chip
dimensions
Test conditions
TYPE
PIN
EH80050
EH80051
EH80052
EH80053
EH80055
EH80080
EH80083
EH80086
EH80100
EH80102
EH80106
N/A
I < 10A I < 10A
mm typ.
Gold dia per side
0.13
0.15
0.25
0.27
0.34
0.13
0.27
0.55
0.23
0.30
0.55
Breakvoltage down
VR
VBR
Applicable
0.6
0.6
0.8
0.8
0.9
0.8
0.9
1.4
0.9
0.9
1.4
CHIP AND PACKAGED DIODES

Junction
Forward series
Minority
capacitance
resistance
carrier
Cj (1)
RSF
lifetime
VR = 50 V
f = 120 MHz
IF = 10 mA
f = 1 MHz
IF
IR = 6mA
V
min.
V
typ.
typ.
pF
max
500
500
500
500
500
800
800
800
1000
1000
1000
550
550
550
550
550
850
850
850
1100
1100
1100
0.15
0.30
0.60
0.80
1.2
0.15
0.80
1.4
0.30
0.60
1.40
0.20
0.40
0.70
0.90
1.3
0.20
0.90
1.7
0.40
0.75
1.70
VR = 100V
EH80120
EH80124
EH80126
EH80129
EH80154
EH80159
0.25
0.65
0.75
1.25
0.65
1.25
0.9
1.5 H (2)
1.7 H (2)
2.2
1.5
2.2
1200
1200
1200
1200
1500
1500
1300
1300
1300
1300
1600
1600
0.30
1.00
1.40
2.00
1.00
2.00
0.40
1.20
1.70
2.30
1.20
2.30
VR = 200V
EH80182
EH80189
EH80204
EH80209
EH80210
(1)
(2)
0.75
1.4
0.85
1.4
1.5
1.5
2.6 H (2)
1.7
2.6 H (2)
3 H (2)
1800
1800
2000
2000
2000
1900
1900
2100
2100
2100
0.60
2.00
1.00
2.00
3.00
0.80
2.40
1.30
2.40
3.40
AS SHOWN
MAX
IF = 100 mA IF = 200 mA
0.70
0.60
0.40
0.30
0.25
0.80
0.40
0.35
0.70
0.40
0.35
0.65
0.55
0.30
0.25
0.22
0.70
0.30
0.28
0.60
0.35
0.30
IF = 200 mA
IF = 300 mA
0.60
0.45
0.40
0.30
0.45
0.30
0.55
0.35
0.30
0.25
0.35
0.25
IF = 200 mA
IF = 300 mA
0.60
0.35
0.50
0.35
0.20
0.50
0.30
0.40
0.30
0.15
Other capacitance values available on request

Hexagonal chips (between opposite flats)
1-18
S
min.
1.1
1.5
2.0
2.5
3.0
2.0
3.0
5.0
3.0
4.0
7.0
6.0
10.0
12.0
15.0
10.0
15.0
12.0
18.0
14.0
18.0
25.0
SILICON PIN DIODES

MICROWAVE
PACKAGED DIODES
Type
Thermal
resistance
RTH (4)
Standard case (3)
Typical operating
conditions
VSWR < 1.5
Z0 = 50
PDISS = 1 W
Chip configuration
C/W
PIN
DH80050
DH80051
DH80052
DH80053
DH80055
DH80080
DH80083
DH80086
DH80100
DH80102
DH80106
Shunt
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
F 27d
BH35
F 27d
F 27d
BH35
Isolated stud
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH301
BH300
Flat mounted
BH202
BH202
BH202
BH202
BH202
BH202
BH202
BH202
BH202
BH202
BH202
max
20.0
18.0
15.0
12.0
10.0
18.0
12.0
8.0
15.0
12.0
5.5
DH80120
DH80124
DH80126
DH80129
DH80154
DH80159
F 27d
BH35
BH35
BH141
BH141
BH141
BH301
BH300
BH300
BH300
BH300
BH300
BH202
BH200
BH200
BH200
BH200
BH200
DH80182
DH80189
DH80204
DH80209
DH80210
BH35
BH141
BH141
BH141
BH141
BH300
BH300
BH300
BH300
BH300
BH200
BH200
BH200
BH200
BH200
Frequency
Power
50
30
20
20
10
50
20
10
20
20
10
MHz
- 20000
- 15000
- 10000
3000
1000
- 20000
- 10000
500
- 10000
- 3000
500
W
50
80
100
100
250
60
80
200
80
100
500
15.0
8.0
6.0
4.5
8.0
4.5
10
10
10
5
10
5
8000
2000
500
200
2000
200
100
250
500
1000
250
1000
10
4.5
8.0
4.5
2.5
10
15
10
1.5
1.5
50
200
1000
200
50
1000
250
1000
1000
(3)Custom cases available on request (4) RTH is measured in a standard shunt case, grounded on an infinite heatsink
Temperature ranges:
Operating junction (Tj): -55 C to +175 C
Storage: -65 C to +200 C

1-19

SILICON PIN DIODES

MICROWAVE
Two & three port RF PIN switch modules
Description
This series of SP2T and SP3T RF switches uses high voltage PIN diodes, from the EH80000 family,
to achieve very low loss and distortion.
Theses switches can be used from 1.5 to 1000 MHz, and can handle power levels up to 1000 W.
Electrical characteristics
Loss
Isolation
Input power
Pin
N/A
f (MHz)
If (mA)
f (MHz)
Vr (V)
CW
Forward
Reverse
Switch
Type
MHz
dB
dB
mA
(2)
typ.
max
min.
max
typ.
typ.
10
10
100
100
50
50
100
100
100
100
200
200
200
200
150
150
150
150
1000
400
600
1000
1000
1000
1000
700
700
Characteristics
at 25C
Frequency
range
Test conditions
Type
Case
(1)
SH90101
SH91101
TO39
TO39
SP2T
SP2T
10 - 600
10 - 600
SH90103
SH91103
SH92103
SH93103
BH203
BH203
BH204
BH204
SP2T
SP2T
SP3T
SP3T
20
20
20
20
SH91107
BH403a
SP2T
20 - 500
SH90207
SH91207
BH405
BH405
SP2T
SP2T
1.5 - 50
1.5 - 50
1000
1000
1000
1000
(1) Series 90 and 92 : common anode

Series 91 and 93 : common cathode
200 MHz 100 MHz

100 mA
0V
0.35
35
0.35
35
400 MHz 200 MHz
100 mA
0V
0.35
25
0.35
25
0.35
25
0.35
25
100 MHz 200 mA
200 mA
100 V
0.20
33
10 MHz 10 MHz
200 mA
200 V
0.15
37
0.15
37
(2)
Custom configurations available on request
Temperature ranges:
Operating junction (Tj) :
Storage
:
1-20
Suggested bias
conditions
- 55 C to + 150 C
- 65 C to + 175 C

SILICON PIN DIODES

MICROWAVE
Internal wiring diagrams
Typical performances
INSERTION
LOSS AND ISOLATION
VERSUS FREQUENCY
common
anode
common
cathode
Isolation
(dB)
Insertion
loss (dB)
0.9
46
0.8
44
42
0.7
Isolation
0.6
BOTTOM
VIEW
SH91101
SH90101
38
0.4
36
0.3
34
0.2
32
Insertion
loss
0.1
0
10
30
28
20 30 50 70 100
200
SH91103
400 600
Isolation
(dB)
Insertion
loss (dB)
SH90103
40
0.5
0.8
52
0.7
48
0.6
44
0.5
40
Isolation
0.4
36
32
0.3
28
0.2
24
Insertion
loss
0.1
0
20
SH92103
30
20
Isolation
(dB)
Insertion
loss (dB)
52
0.7
48
0.6
44
0.5
40
Isolation
0.4
36
0.3
32
Insertion
loss
0.2
SH91107
28
24
0.1
0
20
30
50 70 100
bias bias
bias
200 300
20
500
0.8
54
0.7
51
0.6
48
0.5
45
Isolation
0.4
42
0.3
SH91207
f
(MHz)
Isolation
(dB)
Insertion
loss (dB)
SH90207
50 70 100 200 400 700 1000 (MHz)
SH93103
0.8
bias
f
(MHz)
38
Insertion
loss
0.2
36
33
0.1
30
0
1
3 5
7 10
20
30
50
f
(MHz)
1-21

101164

Uploaded by

Copyright:

Available Formats

101164

Uploaded by

Document Information

Original Description:

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

101164

Uploaded by

Copyright:

Available Formats

SILICON PIN DIODES

High voltage PIN diodes

HIGH VOLTAGE PIN DIODES

These devices are most often used to control

The controlling element of a PIN diode is its

TEMEX COMPONENTS high-voltage PIN diode

SILICON PIN DIODES

Silicon PIN diodes for switching & phase shifting applications

I < 10A I < 10A

CHIP AND PACKAGED DIODES

Other capacitance values available on request

SILICON PIN DIODES

Standard case (3)

Operating junction (Tj): -55 C to +175 C

Storage: -65 C to +200 C

SALES OFFICES: VISIT OUR WEB SITE AT

SILICON PIN DIODES

Two & three port RF PIN switch modules

(1) Series 90 and 92 : common anode

200 MHz 100 MHz

Custom configurations available on request

SALES OFFICES: VISIT OUR WEB SITE AT

SILICON PIN DIODES

Internal wiring diagrams

LOSS AND ISOLATION

50 70 100 200 400 700 1000 (MHz)

You might also like