Advanced in The VLSI Design Flow PDF
Advanced in The VLSI Design Flow PDF
Advanced in The VLSI Design Flow PDF
Design Flow
By Venkatesh Prasad
02/26/09
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ECS Offerings
Educational Consultancy Services (ECS)
Academics
VLSI,
oIndustry Approved
Setting
Product Companies
Domain
Corporate Training
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Educational Consulting
Service
Manages RV-VLSI Design Center on behalf of RV
Group of Educational Institutions
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Shrama -I
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Abhyas
TALENT INCUBATION CENTER
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RV-VLSI Datacenter
Multi CPU machines
Access through SUNRAY
Linux 64 bit architecture
Industry Standard EDA tool access
Access to latest processes and
technology
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RV-VLSI Team
Dedicated fulltime Faculty with domain expertise
B. K. Srinath
25 yrs, Ex- BEL, Ex-TI
Fullcustom, PD and CAD
Dr. Preetham Lakshmikanthan Phd.
10 yrs, Ex-Intel
RTL Verification, SV, FPGA
Vibhav T
Gold Medalist IIT-B
25 Yrs Ex- TEL
RTL Design, FPGA, System Design
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1512
No. of Countries
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A bit of history
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Picture Of First IC
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Layout of an IC say a
decade ago
I/O Ring
Analog
I/O Ring
Analog
Digital Block
Memories
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Digital Block
Analog
I/O Ring
FPS: State Of The Art Flows, Proven IP And Efficient
Communications With Global Teams
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Memories
Digital Block
Analog
M2
I/O Ring
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Sample Layouts
11460 x 8000
10580 x 7840
8 layer metal
6 layer metal
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Sample Layouts
Die size is 4609.6 x 6410.6
15,887,555 devices
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18,757,178 devices
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Question:
Simulation
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Design (FE)
Implementation
MRD
Micro
Architectural
RTL
Analysis
P&R
CTS
Specification
RTL
Synthesis &
STA analysis
PEX and
BA
Architectural
Specification
Verification
DFT
DRC &LVS
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TO
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Design Challenges
Market Pressures
Designs must work at a high frequency
Must consume less power
Must be cheap (small die size or area and yield)
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Micro-architecture level
RTL
Clock gating, Power gating
RTL
Physical
Clock tree, multi-Vth
Mfg
Gate/Physical implementation
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RTL can remain untouched and reused; UPF adds power intent
UPF
UPF
RTL
Synthesis
UPF
Netlist
UPF
Netlist
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HDL
User PA
Models
UPF
Compile
n
Compile as usual
No change in source code
Liberty
Optimize
Simulate
---------------------------------------------------------------- QuestaSim Power Aware Design Element Report File --------------------------------------------------------------------------------------------------------------------------PD_top: {Path1} = scope /testbench/axi_dut <>
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Isolation cells
n
n
n
Level shifters
n
25
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Evolution of Verification
Process
Verification by writing
sophisticated test benches
Verification done by
design engineer
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Verification done by a
verification engineer
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Reasons
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Functional testing of a
mobile phone
Phone calls
Messages
Games
Call + Games+Message
Message + Games
Corner cases
Call + Games
Functional
Testing
Call + Message
Games
Basic cases
Message
Call
0
10
20
30
40
Y-Axis: features
50
60
70
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Initially lots
of Bugs are B u g
S t a t u s
found in the
design
180
160
140
120
C rea ted
Assig ned
100
S ta tu s
F ix ed
C losed
80
Mov ed
Tota l
60
40
20
0
41
0.
0
40
39
6.
0
40
38
2.
0
40
36
8.
0
40
35
4.
0
40
34
0.
0
40
32
6.
0
40
31
2.
0
40
29
8.
0
40
28
4.
0
40
27
0.
0
40
25
6.
0
40
24
2.
0
40
22
8.
0
40
40
21
4.
0
0.
20
40
40
18
6.
RTL
Freeze
point
D a te
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Verification Gap
The
big
challenge
confron/ng
the
industry
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Defect type & location is derived from the layout of the cell
2. Extract
4. Model
S0
S1
D0
D1
D2
D0
D1
5. ATPG
1. Layout
D2
S0
S1
3. SPICE SIM
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core 2
33
core 1b
core 1a
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1.85
A
FF1
1.67
A Y
B2
CK Q
1.5
B1
Common path
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1.77
A Y
B3
D
FF2
Setup = 0.3
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A1
A4
A
B
A
A
B
A2
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A3
A5
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35
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Until 90nm process node, timing libraries used NLDM (NonLinear Delay Modeling).
l
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2.5D / 3D-IC
Pattern Match
Pattern Match
Dummy / SmartFill
SmartFill (DP)
Litho checks:
IP
Litho checks:
IP / full chip
Litho checks:
IP / full chip (DP)
PEX
PEX
ADP
ADP (DP)
LVS
LVS
LVS
LVS
Single-dimension PV
Single-dimension PV
Single-dimension PV
Multi-dimension PV
Multi-dimension PV
2002
130 nm
2006
90 nm
2008
65 nm
2010
40/28nm
2012
20/16/14 nm
Dummy Fill
Critical Area
Critical Area
Recommended Rule /
CFA / MAS
Recommended Rule /
CFA / MAS
Comprehensive
Reliability
checks
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Recommended
2.5D / 3D-IC
Required
FinFET:
PV, CV, DFM
Double Patterning
(DP)
Delta-Voltage DRC/
PERC checks
Double Pattern
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Why Calibre?
AMD TRM
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1.
2.
3.
Execute pattern
matching and view
results with Calibre RVE
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Solder bumps
Substrate
BGA
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Operating Voltage :
600mv to 900mv
A few hundred
Team Size:
Sixty Engineers
6 to 8 months
DFT
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We have come a
long way
A Typical DSM Fab must meet
Class 2 20
Generally has the capability of
handling 12 wafers
Costs about USD 6 Billion!!!
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Summary
In this Field the only thing constant is change
New tools, new flows, new products
RTL design and Verification takes 60% of the total design time
and most of the job openings are in this area
System Verilog and UVM expertise is in demand
Low power design methodologies
DFT, Implementation and timing analysis
Physical design with PEX and DFM
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Thank You
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nkamath@nanochipsolutions.com
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