STP5NA80 Datasheet

STP5NA80
STP5NA80FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
STP5NA80
STP5NA80FI
V DSS
R DS( on)
ID
800 V
800 V
< 2.4
< 2.4
4.7 A
2.8 A
TYPICAL RDS(on) = 1.8

30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
LOW INTRINSIC CAPACITANCES
GATE GHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low RDS(on) and gate charge, unequalled
ruggedness and superior switching performance.
3
1
TO-220
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS

Symbol
Parameter
Value
STP5NA80
VD S
V DG R
V GS
800
Drain-gate Voltage (RG S = 20 k)
800
30
Gate-source Voltage
o
ID
Drain Current (continuous) at T c = 25 C

Drain Current (continuous) at T c = 100 oC
P tot
V ISO
T stg
Tj
STP5NA80FI
Drain-source Voltage (V GS = 0)
ID
ID M()
Unit
4.7
2.8
1.8
19
19
125
45
Derating Factor
0.36
W/o C
Insulation Withstand Voltage (DC)
2000
Drain Current (pulsed)

o
Total Dissipation at Tc = 25 C
Storage Temperature
Max. Operating Junction Temperature
-65 to 150
150
() Pulse width limited by safe operating area
November 1996
1/10
STP5NA80/FI
THERMAL DATA
R thj-cas e
Rthj- amb
Rt hc- sin k
Tl
Thermal Resistance Junction-case
TO-220
ISOWATT220
2.78
Max
Thermal Resistance Junction-ambient

Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
C/W
62.5
0.5
300
C/W
C/W
o
C
Max Value
Unit
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IA R
Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by T j max, < 1%)
4.7
E AS
Single Pulse Avalanche Energy

(starting T j = 25 o C, ID = I AR, VD D = 50 V)
110
mJ
E AR
Repetitive Avalanche Energy

(pulse width limited by T j max, < 1%)
4.5
mJ
IA R
Avalanche Current, Repetitive or Not-Repetitive

(T c = 100 o C, pulse width limited by T j max, < 1%)
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)

OFF
Symbol
V( BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 A
VG S = 0
I DS S
Zero Gate Voltage

V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating x 0.8
IG SS
Gate-body Leakage
Current (V D S = 0)
Min.
Typ.
Max.
800
Unit
V
T c = 125 oC
V GS = 30 V
25
250
A
A
100
nA
ON ()
Symbol
Parameter
Test Conditions
V G S(th)
Gate Threshold Voltage V DS = V GS
ID = 250 A
R DS( on)
Static Drain-source On
Resistance
V GS = 10V
ID = 2.5 A
I D( on)
On State Drain Current
V DS > ID( on) x RD S(on) max

V GS = 10 V
Min.
Typ.
Max.
Unit
2.25
3.75
1.8
2.4
4.7
DYNAMIC
Symbol
gfs ()
C iss
C oss
C rss
2/10
Parameter
Test Conditions
Forward
Transconductance
V DS > ID( on) x RD S(on) max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
ID = 2.5 A
VG S = 0
Min.
Typ.
2.7
5.2
1250
140
35
Max.
Unit
S
1700
190
50
pF
pF
pF
STP5NA80/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
t d(on)
tr
(di/dt) on
Qg
Q gs
Q gd
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
55
135
ns
ns
Turn-on Time
Rise Time
V DD = 400 V I D = 2.5 A
VGS = 10 V
R G = 47
(see test circuit, figure 3)
40
100
Turn-on Current Slope
V DD = 640 V I D = 5 A
VGS = 10 V
R G = 47
180
Total Gate Charge

Gate-Source Charge
Gate-Drain Charge
V DD = 640 V
ID = 5 A
V GS = 10 V
A/s
55
8
24
75
nC
nC
nC
Typ.
Max.
Unit
75
25
110
100
35
150
ns
ns
ns
Typ.
Max.
Unit
4.7
19
A
A
1.6
SWITCHING OFF
Symbol
t r(Vof f)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
Min.
V DD = 640 V I D = 5 A
R G = 47 VGS = 10 V
SOURCE DRAIN DIODE

Symbol
Parameter
Test Conditions
IS D
I SDM()
Source-drain Current
Source-drain Current
(pulsed)
V S D ()
Forward On Voltage
I SD = 4.7 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 5 A di/dt = 100 A/s

V DD = 100 V
T j = 150 o C
t rr
Q rr
I RRM
Min.
V GS = 0
800
ns
15.2
38
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

() Pulse width limited by safe operating area
Safe Operating Areas For TO-220
Safe Operating Areas For ISOWATT220
3/10
STP5NA80/FI
Thermal Impedeance For TO-220
Thermal Impedance For ISOWATT220
Derating Curve For TO-220
Derating Curve For ISOWATT220
Output Characteristics
Transfer Characteristics
4/10
STP5NA80/FI
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs

Temperature
Normalized On Resistance vs Temperature
5/10
STP5NA80/FI
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
6/10
STP5NA80/FI
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For

Resistive Load
Fig. 4: Gate Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching

And Diode Reverse Recovery Time
7/10
STP5NA80/FI
TO-220 MECHANICAL DATA

mm
DIM.
MIN.
inch
MAX.
MIN.
4.40
TYP.
4.60
0.173
0.181
1.23
1.32
0.048
0.051
2.40
2.72
0.094
0.107
D1
TYP.
1.27
MAX.
0.050
0.49
0.70
0.019
0.027
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
3.5
3.93
0.137
0.154
3.75
3.85
0.147
0.151
D1
L9
DIA.
H2
G1
F1
L2
F2
Dia.
L5
L9
L7
L6
L4
P011C
8/10
STP5NA80/FI
ISOWATT220 MECHANICAL DATA

mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.4
4.6
0.173
0.181
2.5
2.7
0.098
0.106
2.5
2.75
0.098
0.108
0.4
0.7
0.015
0.027
0.75
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9.3
0.354
0.366
3.2
0.118
0.126
L3
L3
L6
F1
L7
F2
G1
1 2 3
L2
L4
P011G
9/10
STP5NA80/FI
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
.
10/10

STP5NA80 Datasheet

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STP5NA80

TYPICAL RDS(on) = 1.8

INTERNAL SCHEMATIC DIAGRAM

SWITCH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

ABSOLUTE MAXIMUM RATINGS

Drain-gate Voltage (RG S = 20 k)

Drain Current (continuous) at T c = 25 C

Insulation Withstand Voltage (DC)

Drain Current (pulsed)

() Pulse width limited by safe operating area

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Avalanche Current, Repetitive or Not-Repetitive

Single Pulse Avalanche Energy

Repetitive Avalanche Energy

Avalanche Current, Repetitive or Not-Repetitive

ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)

Zero Gate Voltage

Gate Threshold Voltage V DS = V GS

On State Drain Current

V DS > ID( on) x RD S(on) max

V DS > ID( on) x RD S(on) max

Turn-on Current Slope

Total Gate Charge

SOURCE DRAIN DIODE

I SD = 5 A di/dt = 100 A/s

() Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

Safe Operating Areas For TO-220

Safe Operating Areas For ISOWATT220

Thermal Impedeance For TO-220

Thermal Impedance For ISOWATT220

Derating Curve For TO-220

Derating Curve For ISOWATT220

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

Normalized Gate Threshold Voltage vs

Normalized On Resistance vs Temperature

Turn-on Current Slope

Turn-off Drain-source Voltage Slope

Switching Safe Operating Area

Accidental Overload Area

Source-drain Diode Forward Characteristics

Fig. 1: Unclamped Inductive Load Test Circuits

Fig. 2: Unclamped Inductive Waveforms

Fig. 3: Switching Times Test Circuits For

Fig. 4: Gate Charge Test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

TO-220 MECHANICAL DATA

ISOWATT220 MECHANICAL DATA

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