300 Watts

APPLICATION NOTE
Wideband 300 W push-pull FM

amplifier using BLV25
transistors
AN98031
Philips Semiconductors
Wideband 300 W push-pull FM amplifier

using BLV25 transistors
CONTENTS
1
INTRODUCTION
AMPLIFIER DESIGN THEORY
2.1
2.2
2.3
The output network

The input network
Bias components
PRACTICAL 300 W PUSH-PULL AMPLIFIER

WITH 2 BLV25
3.1
3.2
3.3
General remarks
Alignment
Performance
BLW86 DRIVER AMPLIFIER
4.1
4.2
4.3
Amplifier Design
Alignment
Performance
COMBINATION OF DRIVER AND FINAL

AMPLIFIER
STABILITY AND EFFICIENCY

IMPROVEMENT
CONCLUSION
REFERENCE
1998 Mar 23
Application Note
AN98031

Application Note
AN98031
SUMMARY
For transmitters and transposers for the FM broadcast band (87.5 108 MHz), a 300 W push-pull amplifier using two
BLV25 transistors has been designed and built. The transistors operate in class-B from a 28 V supply. In addition, a
suitable single-stage driver amplifier using a BLW86 transistor also operating in class-B from a 28 V supply has been
designed and built.
Table 1 shows the main properties of each amplifier and of the driver/final-amplifier combination. The driver and final
amplifier have been aligned at output powers of 45 W and 300 W respectively.
The 2 BLV25 amplifier has a heatsink with forced air cooling and a 10 mm copper plate heat-spreader.
Table 1
Amplifier performance overview; note 1
FM BAND
87.5 108 MHz
BLW86 DRIVER
POUT = 45 W
2 BLV25 FINAL
AMPLIFIER POUT = 300 W
COMBINATION AMPLIFIER
BLW86 AND 2 BLV25
POUT = 300 W
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
Gain (dB)
12
13
10.4
11
22.6
25
Input VSWR
1.2
1.3
1.45
1.70
1.1
1.85
Efficiency (%)
69
72
70
71
63
66
Note
1. Circuit board: double copper-clad epoxy fibre glass (r = 4.5), thickness 116-inch.
1
INTRODUCTION
The BLV25 power transistor is intended for use in FM broadcast transmitters and transposers. This transistor which is in
a 6-lead flanged package with 12-inch ceramic cap (SOT119) can deliver 175 W output power at 108 MHz. This report
describes the design and practical implementation of a 300 W wideband push-pull amplifier for the FM broadcast band
using two BLV25 transistors operating in class-B from a 28 V supply voltage. In addition, a suitable driver amplifier is
described. The driver is a single-stage amplifier designed for an output power of 45 W using a BLW86 transistor which
also operates in class-B from a 28 V supply. The BLW86 is in a 38-inch, 4-lead flanged package with a ceramic cap
(SOT123).
2
AMPLIFIER DESIGN THEORY
First, consider the BLV25 transistor. Table 2 gives some of its characteristics at an output power of 160 W and a supply
voltage of 28 V.
The output of a BLV25 can be accurately represented by the equivalent circuit of Fig.1. In Section 3.2, it will be explained
how the information in Table 2 and Fig.1 are used to align the amplifier.
Figure 2 shows a schematic of the amplifier; Fig.3 shows the complete circuit.
1998 Mar 23

Table 2
2.1
Application Note
AN98031
Some characteristics of the BLV25 at several frequencies in the FM broadcast band

Freq.
f
(MHz)
POWER GAIN
G
(dB)
INPUT IMPEDANCE
Zi
()
OPTIMUM LOAD
IMPEDANCE
ZL
()
87.5
11.8
0.54 + j0.38
1.96 j0.04
92.2
11.5
0.56 + j0.43
1.94 j0.06
97.2
11.1
0.58 + j0.48
1.91 j0.07
102.5
10.8
0.60 + j0.53
1.88 j0.08
108.0
10.4
0.63 + j0.59
1.84 j0.11
The output network
The output network consists of three parts:

1. The combination of L9, L10 and C8 which transforms the output impedance of the transistors to a resistance of 12.5
(balanced).
2. The transmission lines L11 and L12 which are connected such that they perform a 1:4 impedance transformation,
making the output impedance of this part 50 (balanced).
3. The transmission lines L13 and L14 which function as a balanced-to-unbalanced transformer (balun), so their output
impedance is 50 (unbalanced).
Note on 1:
The matching section L9, L10 and C8 is rather conventional except that the inductors have been replaced by striplines.
Note on 2:
Lines L11 and L12 are transmission lines with a characteristic resistance of 25 . They are soldered to a copper track on
the p.c. board. This track is 2.8 mm wide, so its characteristic impedance with reference to the ground plane of the p.c.
board is 50 .
Theoretically, their lengths should be 14 wavelength for the centre of the frequency band, namely 42 cm. As this is rather
impractical, we must find a way to use shorter lines. Two possibilities exist:
Lines L11 and L12 are not soldered to tracks on the p.c. board but are surrounded by ferrite tubes of suitable dimensions
and material. Finding the correct combination is however somewhat involved.
The lengths of lines L11 and L12 are reduced significantly and the parallel inductance introduced is compensated by
increasing the value of C8. As this method provides good results, it has been adopted.
Note on 3:
The line L14 is a transmission line with a characteristic resistance of 50 . It is also soldered to a 2.8 mm wide track on
the p.c. board. For the length of this line, the story is similar to that of the 1:4 impedance transformer. By making the line
shorter than a 14 wavelength, an inductance is introduced from point B (Fig.2) to ground. To restore the symmetry, an
equal inductance must be introduced between point A and ground. This is done by means of line L13 which is a 2.8 mm
wide track on the p.c. board of the same length as L14. Finally, the parallel inductances (from point A to ground, and from
point B to ground) are compensated by the series capacitors C9 and C10.
After initial calculation of the separate sections and their compensation, the network was optimized using a computer
optimization program. The final dimensions of the components can be found in Fig.3.
The maximum VSWR of this network is <1.05.
A remark must be made about the reactive loading of C8 which is nearly 900 VA at 108 MHz, so a high-quality capacitor
must be used. Two or three capacitors in parallel can also be considered.
1998 Mar 23

2.2
Application Note
AN98031
The input network
This network is very similar to the output network and, like it, consists of three parts:
1. The combination of L1 and L2 forms an unbalanced-to-balanced transformer whose output impedance is 50
(balanced)
2. The combination L3 and L4 forms a 4:1 impedance transformer whose output impedance is 12.5 (balanced)
3. The components L5 to L8 and C3 to C7 form a two-section matching network to match the input impedances of the
transistors to 12.5 (balanced).
All the remarks made for the output network also apply to the input network, though several values are different.
The calculation of the input network was made in the same way as that for the output network. However, the total length
of the lines L1 to L4 became too long for practical use. After dividing the lengths of these lines by 1.6, the other
components were re-optimized, raising the input VSWR from 1.20 to 1.27. All component values are given in Table 5.
A consequence of this way of designing is that the power gain at 87.5 MHz is approximately 1.4 dB higher than that at
108 MHz. This variation must be compensated in one of the driver stages.
An alternative design with a nearly flat power gain of about 10 dB can be made, however, the input matching is only good
at the high end of the frequency band; at 87.5 MHz, the input VSWR rises to about 3.2. Further details of this alternative
are not given here.
2.3
Bias components
Theoretically, point VB can be grounded directly. However, it may be better to ground it via an RF choke shunted by a
12 resistor as shown in Fig.4 because of:
Small asymmetries in the transistors and circuit, and
Possible parasitic oscillation when the transistors operate in parallel rather than push-pull.
Resistors R1 and R2 have been added to improve stability during mismatch. For point VC, the same holds as for point
VB, except that the supply voltage must be connected to the former. In the simplest configuration, point VC is decoupled
for RF frequencies. A better proposition is probably the circuit shown in Fig.5.
3
3.1
PRACTICAL 300 W PUSH-PULL AMPLIFIER WITH 2 BLV25

General remarks
Having established a theoretical design, let us now look at a practical implementation.

The amplifier has been designed on a double copper-clad epoxy fibre glass (r = 4.5) board, thickness 116-inch. Figure 6
shows the print board and Fig.7 the layout of the amplifier. Rivets and, at the board edges, soldered copper straps have
been used to provide good contact between both sides of the board. Where the emitters are grounded, contact is made
with the lower side of the board.
The print board and transistors are attached to a 10 mm thick copper plate which acts as a heat-spreader. This plate is
screwed to a standard heatsink with forced air cooling. At an ambient temperature of 25 C, and with the amplifier
operating at 300 W output power, the heatsink temperature is below 55 C.
3.2
Alignment
The first alignment was done with small signals, starting with the output circuit. The BLV25 transistors were replaced by
dummy loads, representing the complex conjugate of the optimum load impedance. The dummy consists of a 2.22
resistance and a 300 pF capacitance.
To reduce parasitic inductance and to maintain the best possible symmetry, we used several components in parallel.
These components were soldered to an empty SOT119 header.
1998 Mar 23

Application Note
AN98031
The reflection versus frequency was measured at the output terminal and minimized by adjusting the capacitors
C16, C14, C15 and C9. Figure 8 shows the schematic diagram and Fig.9 the return losses; the VSWR remains below 1.13.
The alignment of the input network was done with the transistors in circuit and with the supply voltage and load
connected. First, alignment was made with the transistors in class-A (IC = 1.7 A and VCE = 25 V). The reflection versus
frequency was then minimized at small-signal levels. Then the operation was altered to class-B, and the amplifier
realigned at an output power of 300 W. The required circuit modifications were rather small. Figure 10 shows the final
circuit. Resistances R2 and R3 are necessary to prevent parallel oscillations. The inductance of these resistors is very
important (see Table 6).
In spite of the dummy adjustment of the output circuit, the capacitance of C9 had to be reduced to improve the collector
efficiency, , of the amplifier. In addition, three capacitors in parallel have been used because of the very high reactive
loading at that point.
3.3
Performance
The amplifier has been aligned at an output power of 300 W. Figures 11 to 13 show the gain, input VSWR and collector
efficiency as functions of frequency at 300 W output power. Figure 14 shows the variation of efficiency with output power,
both measured at 108 MHz.
4
4.1
BLW86 DRIVER AMPLIFIER

Amplifier Design
The required drive power for the 2 BLV25 amplifier described in Section 3 is about 30 W. The input VSWR of this final
amplifier varies between 1.45 and 1.7 (see Fig.12), so the load impedance of the driver amplifier differs from 50 and
varies with frequency. As the effect of this on the performance of the driver cannot be predicted, some reserve output
power was built in and a 45 W driver was designed. The driver is a single-stage class-B amplifier using a BLW86
transistor.
Table 3 shows some properties of the BLW86 from 87.5 to 108 MHz, valid for class-B operation and an output power of
45 W.
Table 3
Some characteristics of the BLW86 at several frequencies in the FM broadcast band

Freq.
(MHz)
GAIN
(dB)
INPUT IMPEDANCE
()
LOAD IMPEDANCE
()
87.5
13.61
0.76 j0.00
7.65 + j3.28
89.8
13.40
0.76 + j0.04
7.56 + j3.32
92.2
13.18
0.76 + j0.08
7.48 + j3.36
94.7
12.96
0.76 + j0.12
7.39 + j3.40
97.2
12.75
0.75 + j0.16
7.32 + j3.47
99.8
12.53
0.75 + j0.20
7.23 + j3.51
102.5
12.31
0.75 + j0.24
7.13 + j3.54
105.2
12.10
0.75 + j0.28
7.05 + j3.60
108
11.89
0.75 + j0.32
6.95 + j3.63
The input impedance has to be matched to the 50 source impedance to obtain a good input VSWR and the 50 load
impedance has to be transformed into the optimum load impedance, which is given in Table 2. This has been done using
Chebychev low-pass LC filter techniques (see Chapter Reference).
1998 Mar 23

Application Note
AN98031
The driver amplifier was designed on double-clad epoxy glass fibre board (r = 4.5), 116-inch thick. Figure 16 shows the
board and layout of the amplifier. Rivets and straps were again used and the emitter connected to the underside of the
board.
4.2
Alignment
The alignment procedure was as described in Section 3.2. The optimal load impedance given in Table 2 suggested a
dummy load of 10 resistance in parallel with a 91 pF capacitance. Alignment with this dummy load resulted in a
collector efficiency of about 60%. Later, it was found that lowering the dummy capacitance to 56 pF raised the efficiency
to about 70%. Figure 17 shows the alignment circuit and Fig.18 the VSWR at the output terminal measured with the
10 // 56 pF dummy load.
The input circuit has been aligned with the transistor in the circuit and the supply voltage connected. Again, alignment
was started with the transistor operating in class-A (IC = 1 A and VCE = 25 V). The small-signal input VSWR has been
minimized.
Then, the transistor was set to class-B operation, and the amplifier realigned at an output power of 45 W. Figure 19
shows the final circuit and Table 7 shows the part list. The collector DC biasing coil, L8, plays an active role in the
impedance transformation.
4.3
Performance
Figs 20 and 21 show the gain and input VSWR as functions of frequency. The gain is 12.5 0.5 dB and the VSWR
remains below 1.3:1 throughout the band.
Figure 21 shows that the collector efficiency is better than 69%. The measurements were taken at 45 W output power.
Figures 23 and 24 show collector efficiency and amplifier gain versus output power at 108 MHz. Note, the amplifier was
only aligned at 45 W output power.
5
COMBINATION OF DRIVER AND FINAL AMPLIFIER
Figs 25 and 26 show the gain and input VSWR of the combination of driver and final amplifier at 300 W output power.
This gives an indication of the effect of the fluctuating input VSWR of the final amplifier on the performance of the driver
amplifier. The efficiency of the combination is more than 63%, as Fig.27 shows.
No additional alignment was made. The required input drive power for 300 W output is less than 1.7 W.
6
STABILITY AND EFFICIENCY IMPROVEMENT
It is recommended to add an inductance LCC between the collectors of the two BLV25 transistors, see Fig.28 (c.f. Fig.10)
to improve stability at low output powers. An additional advantage of this modification is that it raises collector efficiency
while hardly affecting the input VSWR (which remains below 1.75). Figures 29 to 31 show the results measured on a
water-cooled amplifier for three conditions: without LCC, with LCC = 41 nH, and with LCC = 29 nH.
7
CONCLUSION
A 300 W push-pull amplifier using two BLV25 transistors driven by a single-stage amplifier using a BLW86 have been
designed. Table 4 shows the main performance parameters of the individual amplifiers and of their combination.
1998 Mar 23

Table 4
Application Note
AN98031
Performance overview (basic amplifier without the modification for higher efficiency)
FM BAND
87.5 108 MHz
2 BLV25 FINAL
AMPLIFIER POUT = 300 W
BLW86 DRIVER
POUT = 45 W
COMBINATION AMPLIFIER
BLW86 AND 2 BLV25
POUT = 300 W
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
Gain (dB)
12
13
10.4
11
22.6
25
Input VSWR
1.2
1.3
1.45
1.70
1.1
1.85
Efficiency (%)
69
72
70
71
63
66
REFERENCE
G.L. Matthaei, Tables of Chebychev impedance transforming networks of low-pass filter form. Proc. of the IEEE,
Aug. 1964, pp. 939-963.
1.46 nH
handbook, halfpage
C
2.26
313 pF
E
MGP999
Fig.1 Equivalent circuit of BLV25 output.
handbook, full pagewidth
BLV25
BRANCH
50 semi-rigid
coaxial cable
25
6.25
4:1
TRANSFORMER
50
25
4:1
TRANSFORMER
50
6.25
MGH965
BLV25
BRANCH
Fig.2 Main amplifier schematic.
1998 Mar 23
This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in
_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in
white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...
C2
,,,
,,,
,,,
,,,
L7
L5
C5
VB
C3
C6
L6
L4
L8
R2
C7
,,
,,
,,
,,
L9
L11
TR1
C8
VC
TR2
L10
L12
Fig.3 300 W push-pull amplifier for the FM broadcast band (Theoretical design).
C10 B
L13
output
50
L14
MGM624
Application Note
AN98031
For parts list, see Table 5.
,,,
,,,,
,
,
,
C9 A
input
50
L2
L3
C1
C4

k, full pagewidth
1998 Mar 23
,,,,,
,,
L1
R1

Table 5
Application Note
AN98031
Parts list of the main amplifier (Theoretical design)
R1 = R2 = 22 , carbon
C1 = C2 = 200 pF chip (ATC 100B)
C3 = 330 pF chip (ATC 100B)
C4 = C5 = C6 = C7 = 620 pF chip (ATC 100B)
C8 = 240 pF, 500 V chip (ATC 100B or ATC 175)
C9 = C10 = 100 pF, 500 V chip (ATC 100B)
L1 = 50 stripline, w = 2.8 mm, l = 144 mm
L2 = 50 semi-rigid coaxial cable, d = 2.2 mm, l = 144 mm soldered on 50 stripline, w = 2.8 mm
L3 = L4 = 25 semi-rigid coaxial cable, d = 2.2 mm, l = 96 mm; soldered on 50 stripline, w = 2.8 mm
L5 = L6 = 50 stripline, w = 2.8 mm, l = 18.1 mm
L7 = L8 = 30 stripline, w = 6 mm, l = 4.8 mm
L11 = L12 = 25 semi-rigid coaxial cable, d = 3.5 mm, l = 60.3 mm soldered on 50 stripline, w = 2.8 mm
L13 = 50 stripline, w = 2.8 mm, l = 139.6 mm
L14 = 50 semi-rigid coaxial cable, d = 3.5 mm, l = 139.6 mm soldered on 50 stripline, w = 2.8 mm
T1 = T2 = BLV25
Print board material: 116-inch epoxy fibre-glass, r = 4.5
VB
handbook, halfpage
MGM622
Fig.4 Vb bias, components: R = 12 , carbon; L = Fxc 3B RF choke, part no. 4312 020 36640.
handbook, halfpage
L
L
VC
R
C1
+28 V
C2
MGM623
Fig.5
Vc bias. Components: R = 12 , carbon; C1 = 2.7 nF, chip (NP0 type); C2 = 100 nF, chip (X7R type);
L = FXC3B bead, part no. 4312 020 31500 wound with 3 to 6 wires in parallel.
1998 Mar 23
10
11
MGH966
Application Note
AN98031
Fig.6 Printed-circuit board.
100

ook, full pagewidth
1998 Mar 23
235
out
L1
L8
C2
R1
L6
C4/4' C6
L5
C7
TR1
R2
C3
12
L7
L9
rivet
R3
TR2
L10
C11
C9
R4
C14
L14
C15
C10
L11
C12
C13
C8
L2
L16
L12
C5
L17
L13
L4
L15
+28 V
MGH967
Application Note
AN98031
Fig.7 Amplifier lay out.
L3
in

ook, full pagewidth
1998 Mar 23
C16
C1

L10
L12
dummy
2.22
Application Note
AN98031
C14
L16
VSWR
out
300
pF
C16
C12
L14
C13
R4
C9
L15
2.22
Vs = +28 V
300
pF
C15
dummy
L17
L13
L11
MGH968
Fig.8 Output alignment circuit.
MGH969
VSWR
1.5
0.5
86
90
94
98
102
Fig.9 Return loss in circuit of Fig.8.
1998 Mar 23
13
106
110
frequency (MHz)
input
50
L3
C2
L12
L6
C14
L16
output
50
TR1
BLV25
C16
C12
C1
C4
L5
C9
C4'
14
C7
L2
C3
C13
R2
C6
R1
C10
R4
C11
R3
L15
L4
L7
L14
Vs = +28 V
BLV25
TR2
C15
L9
C8
L11
Fig.10 Practical amplifier circuit diagram.
L17
MGH970
Application Note
AN98031
For parts list see Table 6.
L13
L1

ook, full pagewidth
1998 Mar 23
L10
C5
L8

Table 6
Application Note
AN98031
Parts list of the main amplifier (Practical design)
R1 = 12.1 metal film
Philips MR 25, (2322 151 71219)
R2 = R3 = 4.99 metal film
Philips MR 52, (2322 153 54998)
Philips MR 52, (2322 153 51219)
C1 = C4 = C16 = 2 18 pF film dielectric trimmer
Philips, (2222 809 05003)
C2 = C3 = 200 pF chip
ATC 100B-201-K-Px-300
C4 = 300 pF chip
ATC 100B-301-K-Px-200
C5 = C6 = C7 = C8 = 680 pF chip (ATC 100B-681-K-Px-50) in parallel with (ATC 100B-151-J-Px-300)

150 pF chip
C9 = 43 pF chip
ATC 100B-430-J-Px-500
C10 = 68 pF chip
ATC 100B-680-J-Px-500
C11 = 82 pF chip
ATC 100B-820-J-Px-500
C12 = 2.7 nF chip
Philips NPO size 1210, (2222 852 13272)
C13 = 100k chip
Philips X7R size 1812, (2222 852 48104)
C14 = C15 = 100 pF chip
ATC 100B-101-J-Px-500
L1 = 50 semi-rigid coaxial cable, d = 2.2 mm, l = 144 mm, soldered on 50 stripline, w = 2.8 mm
L2 = 50 stripline, w = 2.8 mm, l = 144 mm
L3 = L4 = 25 semi-rigid coaxial cable, d = 3.5 mm, l = 96 mm, soldered on 50 stripline, w = 2.8 mm
L5 = FXC 3B RF choke
Philips 4312 020 36642
L6 = L7 = 50 stripline, w = 2.8 mm, l = 18.1 mm

L12 = L13 = 25 semi-rigid coaxial cable, d = 3.5 mm, l = 60.3 mm soldered on 50 stripline, w = 2.8 mm
L14 = L15 = FXC 3B beads, Philips 4312 020 31500 wound with 6 leads in parallel
L16 = 50 semi-rigid coaxial cable, d = 3.5 mm, l = 139.6 mm soldered on 50 stripline, w = 2.8 mm
L17 = 50 stripline, w = 2.8 mm, l = 139.6 mm
T1 = T2 = BLV25
1998 Mar 23
15

Application Note
AN98031
MGH971
14
Pout = 300 W
gain
(dB)
12
10
8
86
90
94
98
102
Fig.11 Gain versus frequency (main amplifier).
1998 Mar 23
16
106
110
frequency (MHz)

Application Note
AN98031
fMGH972
2.5
Pout = 300 W
VSWR
input
1.5
1
86
90
94
98
102
106
110
frequency (MHz)
Fig.12 Input VSWR versus frequency (main amplifier).
MGH973
100
Pout = 300 W
(%)
80
60
40
86
90
94
98
102
106
110
frequency (MHz)
Fig.13 Collector efficiency versus frequency (main amplifier).
1998 Mar 23
17

Application Note
AN98031
MGH974
80
f = 108 MHz
(%)
60
40
20
50
100
150
200
250
300
Pout (W)
350
Fig.14 Efficiency, , versus output power (main amplifier).
MGH975
14
f = 108 MHz
gain
(dB)
12
10
8
50
100
150
200
250
Fig.15 Gain versus output power (main amplifier).
1998 Mar 23
18
300
Pout (W)
350

Application Note
AN98031
154
50
C8
L9
R1
R2
L4
rivet
C2
C1
L1
C4
in
C5
L2
L8
L5
C6
L3
C7
C9
BLW
86
L10
L6
C10
L11
C12
out
L7
C11
C14
C13
C3
MGH976
Fig.16 Printed circuit board and lay out of the driver.
1998 Mar 23
19

Application Note
AN98031
Vs = +28 V
L9
R2
C9
C8
L8
L6
dummy
10.4
L7
L10
56
pF
C10
L11
C12
C14
C11
C13
VSWR
MGH977
Fig.17 Output alignment circuit (driver).
1998 Mar 23
20

Application Note
AN98031
MGH978
VSWR
1.5
0.5
86
90
94
98
102
106
110
frequency (MHz)
Fig.18 Output VSWR in circuit of Fig.17.
Vs = +28 V
L9
R2
C9
C8
L4
R1
L8
L5
C2
input
50
C1
C4
L2
L1
L6
L7
C6
C5
C10
L11
C12
C14
C11
C13
L3
TR1
BLW86
C3
L10
output
50
C7
MGH979
Fig.19 Driver amplifier circuit.
1998 Mar 23
21

Table 7
Application Note
AN98031
Driver amplifier
Philips MR 25 (2322 151 71219)
R2 = 10 metal film
Philips MR 25, (2322 151 71009)
C1 = C8 = C14 = 2.7 nF chip
Philips NPO size 1210, (2222 852 13272)
C2 = 33 pF chip
ATC 100B-330-J-Px-500
C3 = C13 = 2 18 pF film dielectric trimmer
Philips, (2222 809 09003)
C4 = C5 = 120 pF chip
ATC 100B-121-J-Px-300
C6 = C7 = 510 pF chip
ATC 100B-511-M-Px-100
C9 = 100 nF metallized film capacitor
Philips, (2222 352 45104)
C10 = C11 = 30 pF chip
ATC 100B-300-J-Px-500
C12 = 18 pF chip
ATC 100B-180-J-Px-500
L1 = 48 nH 4 turns enamelled Cu wire = 0.8 mm, i.d. 3 mm, closely wound, length 3.5 mm, leads 2 5 mm
L2 = 60.2 stripline, w = 2 mm, l = 27.2 mm
L4 = L9 = FXC 3B RF choke
Philips 4312 020 36640
L5 = 200 nH 14 turns enamelled Cu wire = 0.5 mm, i.d. 3 mm, closely wound, length 9 mm
L6 = 30.1 stripline, w = 6 mm, l = 3 mm
L8 = 27.9 nH 4 turns enamelled Cu wire = 1 mm, i.d. 4 mm, length 14.3 mm, leads 2 5 mm
L10 = 60.2 stripline, w = 2 mm, l = 47 mm
L11 = 55 nH 4 turns enamelled Cu wire = 1 mm, i.d. 4 mm, length 5.5 mm, leads 2 5 mm
T1 = BLW86
1998 Mar 23
22

Application Note
AN98031
MGH980
16
Pout = 45 W
gain
(dB)
14
12
10
86
90
94
98
102
Fig.20 Gain versus frequency (driver).
1998 Mar 23
23
106
110
frequency (MHz)

Application Note
AN98031
MGH981
2.
Pout = 45 W
VSWR
input
1.5
0.5
86
90
94
98
102
106
110
frequency (MHz)
Fig.21 Input VSWR versus frequency (driver).
MGH982
100
Pout = 45 W
(%)
80
60
40
86
90
94
98
102
106
Fig.22 Collector efficiency versus frequency (driver).
1998 Mar 23
24
110
frequency (MHz)

Application Note
AN98031
MGH983
80
f = 108 MHz
(%)
60
40
20
0
10
20
30
40
50
Pout (W)
60
Fig.23 Collector efficiency, , versus output power (driver).
MGH984
14
f = 108 MHz
gain
(dB)
12
10
8
0
10
20
30
40
Fig.24 Gain versus output power (driver).
1998 Mar 23
25
50
Pout (W)
60

Application Note
AN98031
MGH985
28
Pout = 300 W
gain
(dB)
24
20
16
86
90
94
98
102
106
110
frequency (MHz)
Fig.25 Gain versus frequency (combination amplifier).
MGH986
2.5
Pout = 300 W
VSWR
input
1.5
1
86
90
94
98
102
106
110
frequency (MHz)
Fig.26 Input VSWR versus frequency (combination amplifier).
1998 Mar 23
26

Application Note
AN98031
MGH987
100
Pout = 300 W
(%)
80
60
40
86
90
94
98
102
106
110
frequency (MHz)
Fig.27 Efficiency versus frequency (combination amplifier).
,,,
,,,
,,,
L10
handbook, halfpage
TR1
LCC
TR2
L11
C9
C10
C11
MGH961
Fig.28 Adding inductance LCC improves stability at low output powers and raises efficiency. Compare this with
the relevant part of the circuit shown in Fig.10.
1998 Mar 23
27

Application Note
AN98031
MGH962
13
gain
(dB)
12
Pout = 300 W
11
(1)
(2)
(3)
10
8
82
86
90
94
98
102
Legend:
(1) no LCC.
(2) LCC = 41 nH; 2 turns enamelled Cu wire = 1.7 mm, i.d. D = 8 mm, length 6 mm, leads 2 10 mm.
(3) LCC = 29 nH 1 turn enamelled Cu wire = 1.7 mm, i.d. D = 10 mm, leads 2 12 mm.
Fig.29 Gain versus frequency.
1998 Mar 23
28
106
110
frequency (MHz)
114

Application Note
AN98031
MGH964
2.2
VSWR
2.0
INPUT
1.8
(1)
(2)
1.6
(3)
1.4
1.2
82
86
90
94
98
102
Legend:
(1) no LCC.
(2) LCC = 41 nH; 2 turns enamelled Cu wire = 1.7 mm, i.d. D = 8 mm, length 6 mm, leads 2 10 mm.
(3) LCC = 29 nH 1 turn enamelled Cu wire = 1.7 mm, i.d. D = 10 mm, leads 2 12 mm.
Fig.30 Input VSWR versus frequency.
1998 Mar 23
29
106
110
frequency (MHz)
114

Application Note
AN98031
MGH963
100
(%)
90
Pout = 300 W
80
(1)
(2)
70
(3)
60
50
82
86
90
94
98
102
Legend: as Fig.29.
Fig.31 Efficiency versus frequency.
1998 Mar 23
30
106
110
frequency (MHz)
114
Philips Semiconductors a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
Fax. +43 160 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstrae 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZRICH,
Tel. +41 1 488 2686, Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,

International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Philips Electronics N.V. 1998
Internet: http://www.semiconductors.philips.com
SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
Date of release: 1998 Mar 23

300 Watts

Uploaded by

Copyright:

Available Formats

300 Watts

Uploaded by

Document Information

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

300 Watts

Uploaded by

Copyright:

Available Formats

APPLICATION NOTE

Wideband 300 W push-pull FM

Wideband 300 W push-pull FM amplifier

AMPLIFIER DESIGN THEORY

The output network

PRACTICAL 300 W PUSH-PULL AMPLIFIER

BLW86 DRIVER AMPLIFIER

COMBINATION OF DRIVER AND FINAL

STABILITY AND EFFICIENCY

Wideband 300 W push-pull FM amplifier

Amplifier performance overview; note 1

AMPLIFIER DESIGN THEORY

Wideband 300 W push-pull FM amplifier

Some characteristics of the BLV25 at several frequencies in the FM broadcast band

The output network

The output network consists of three parts:

Wideband 300 W push-pull FM amplifier

The input network

PRACTICAL 300 W PUSH-PULL AMPLIFIER WITH 2 BLV25

Having established a theoretical design, let us now look at a practical implementation.

Wideband 300 W push-pull FM amplifier

BLW86 DRIVER AMPLIFIER

Some characteristics of the BLW86 at several frequencies in the FM broadcast band

Wideband 300 W push-pull FM amplifier

COMBINATION OF DRIVER AND FINAL AMPLIFIER

STABILITY AND EFFICIENCY IMPROVEMENT

Wideband 300 W push-pull FM amplifier

Fig.1 Equivalent circuit of BLV25 output.

handbook, full pagewidth

Fig.2 Main amplifier schematic.

For parts list, see Table 5.

Wideband 300 W push-pull FM amplifier

Wideband 300 W push-pull FM amplifier

Parts list of the main amplifier (Theoretical design)

Fig.6 Printed-circuit board.

Wideband 300 W push-pull FM amplifier

ook, full pagewidth

Fig.7 Amplifier lay out.

Wideband 300 W push-pull FM amplifier

ook, full pagewidth

Wideband 300 W push-pull FM amplifier

handbook, full pagewidth

Fig.8 Output alignment circuit.

handbook, full pagewidth

Fig.9 Return loss in circuit of Fig.8.

Fig.10 Practical amplifier circuit diagram.

For parts list see Table 6.

Wideband 300 W push-pull FM amplifier

ook, full pagewidth

Wideband 300 W push-pull FM amplifier

Parts list of the main amplifier (Practical design)

R1 = 12.1 metal film

Philips MR 25, (2322 151 71219)

R2 = R3 = 4.99 metal film

Philips MR 52, (2322 153 54998)

R4 = 12.1 metal film

Philips MR 52, (2322 153 51219)

C1 = C4 = C16 = 2 18 pF film dielectric trimmer

Philips, (2222 809 05003)