METMEL 43 PP2 MNAI Smola
METMEL 43 PP2 MNAI Smola
METMEL 43 PP2 MNAI Smola
chip realization
OUTLINE:
Introduction
Conclusion
chip application
OUTLINE:
Introduction
Conclusion
Introduction
What is ASIC?
Introduction
Introduction - history
50years
Walter Brattain
William Shockley
Geoffrey Dummer
Jack Kilby
Robert Noyce
In April 1961 he was awarded
a patent for the first multitransistor integrated circuit.
Introduction
Introduction example
12V
17V
Black
box
Introduction example
Method #1:
comparator
Introduction example
Method #2:
ASIC
Introduction example
10 FUNCTIONAL CIRCUITS
?
?
?
?
?
?
? ? ?
?
Introduction example
Method #1: suppose we use one IC for 1$, 5 caps for 0.5$,
LM317 for 1$ and PCB for 3$ total =7.5$ per 1PCB
-10 FUNCTIONAL CIRCUITS: 75$
-10 000 000 FUNCTIONAL CIRCUITS: 75Mil $
Method #2: suppose the design work expenses are 1Mil $,
1 set of masks for chip manufacturing 1Mil $, testing
instruments 1Mil $ total = 3Mil $ per 1 designed ASICs
-10 FUNCTIONAL CIRCUITS: 3Mil $
-10 000 000 FUNCTIONAL CIRCUITS: 3Mil +/- 3Mil $
General advantage of ASICs: much cheaper
for a mass production
Introduction example
Introduction advantages
Advantages of ASICs:
Introduction applications
etc
OUTLINE:
Introduction
ASIC
design flow
Conclusion
The following part will show steps that are followed during
design of an ASIC in AMIS: from initial contact with the
customer to release of the product into production
Product
phases
overview:
Product phases overview:
Phase 0 feasibility and quoting
Phase 1 PreStudy
Phase 2 development
Phase 3 Limited production
PreStudy start
PreStudy end
Project plan specified
Design start
Design Tape Out
Testing prototypes
Customer prototype approval
The goal:
Phase 1 PreStudy
Customer design requirements are analysed in
detail. Preliminary design activity starts in order
to arrive at Project Specifications
The goal:
Quality level:
Phase 2 Development
The Product Specifications must be signed
before entering this phase. Practical designing
of the ASIC
The goal:
to execute design and layout tasks to fulfil
parameters according to the Product Specifications
to manufacture the prototype and to test it
to receive customers prototype approval
BOTTOM-UP
The individual cell are
designed at the transistor
level before or in parallel
with the construction of
top-level schematic
Cell/block design
Cell layout
Chip-level layout
Chip-level post-layout
Tech transfer
Fab,characterisation
Product reliability q.
Limited transfer to pr.
3V
1.2V
REG
BG
ref
Cell/block design
Cell layout
sensor 1
Chip-level layout
analog
Memory bank
digital
OA
Chip-level post-layout
Tech transfer
Fab,characterisation
ref
OA
ADC
C
Product reliability q.
sensor 2
OSC
ref
digital
OA
C
Cell/block design
Cell layout
Chip-level layout
Logic synthesis
Schematic creation
Logic simulation
Chip-level post-layout
Tech transfer
Fab,characterisation
Product reliability q.
Limited transfer to pr.
Automated
/ manual
schematic creation
Schematic simulation
Schematic simulation
Circuit topology
2-stage folded cascode OpAmp
OA
System-level kind of
specifications:
- DC gain
- unity gain frequency
- supply voltage
- maximal power
consumption
- noise specifications
- THD specifications
Device parameters
2-stage folded cascode OpAmp
W
10
=
L
0.5
Simulations
(DC, TR, AC, Noise)
Appropriate circuit
topology selection
Device sizing
optimisation, biasing
currents setting,
threshold voltages
setting
iterative
processes
Corner simulations
(slow, fast, high/low temp)
Verified schematic
Manual or automated
layout design
Parasitic extraction
schematic update,
simulation with
parasitic devices
LVS, DRC
Chip-level layout
LVS, DRC
Chip-level post-layout
Tech transfer
Fabrication
Wafer fabrication
Packaging
Testing, characterisation
Tech transfer
Fab,characterisation
Product reliability q.
Limited transfer to pr.
Life-time testing
(baking, freezing, moisturizing, pressurizing)
OUTLINE:
Introduction
ASIC
design example
Conclusion
ASIC function:
adapted
light beam
driving direction
The sensors:
driving
direction
sensor
ambient
light
sensor
LIN
HW[2:0]
TST
LIN
transceiver
Position controller
Main control
& Registers
OTP + ROM
DACs
PWM
regulator
Y
VBAT
Voltage
regulator
MOTXP
MOTXN
Sinewave
table
LIN slave
controller
Synchronous
I/O controller
(test)
Decoder
PWM
regulator
X
Oscillator
Charge pump
VDD
Reference voltage
&
Thermal monitoring
MOTYP
MOTYN
ASIC connection:
HALL sensing with PWM output
1 HW0
PWMIN 20
2 HW1
VBAT
C1 100nF
C5 1F
tantalum
19
3 VDD
MOTXP 18
4 GND
GND 17
C6 100nF
5 TST
MOTXN 16
6 LIN
MOTYP 15
LIN bus
ESD
7 GND
Adr Connector
GND 14
R2 1k:
C8 2.7nF
D1
C2 100nF
8 HW2
MOTYN
13
9 CPN
VBAT
12
C4 220nF
C3 220nF
10 CPP
Battery
VCP 11
C0 100F
Example summary:
Now in production.
ASIC function:
driving/reading piezo-element
regulation of the ultra-sound level
communication via bus with the control unit
Basic principle:
VBAT
IO
GND
Trafo
ASIC
Piezo
OBSTACLE
D1
BAS321
L1
ACB2012M_040
Tr
n=7.6
ST1
Piezo
ST4
Rfb1
6k8
C1
330pF
ASIC system
schematic:
Cdd2
22nF
Cdd1
68uF
35V
Ccl
1n5
Rfb2
560
ST5
Cdda
1uF
9: VDD 12: NC
Cref
1uF
11: VDDA
14: VREF
13: NC
5: OUT2
7: OUT1
Rio3
10k
Voltage
Regulators
Oscillator
307.2 kHz
Frequency
Divider
Amplitude
Regulation
Transmit
Power
Stage
1: NC
6: VSSE
24: NC
4: FB
Rio1
47
Rio2
1k
Logic
10: IO
Fosc
2: Testio
TESTS
ST2
17: TestinEE
EEPROM
16: TestioEE
Cio
330p
Threshold
Slope
Control
&
18: Testout1
Vref
40k
15: S
D/A
Cs
4n7
Vref
+
Vref
23: IN
80pF
8: VSSD
ST3
3: Testin
19: V3
20: V2
21: V1
22: VSSA
Rbp1
330k
Cbp1
100p
Cbp2
100p
Rre3
2.87k
Rre2
220k
Rre1
12k
Cre
330p
http://www.leftlanenews.com/2006/02/17/video-bmws-automatic-parking-system/
OUTLINE:
Introduction
Conclusion
Conclusion
Pre-study phase
Development phase
Intermezzo
analog-to-digital converters
transconductance stages
dc-dc converters
comparators
charge pumps
signal filters
regulators
drivers, buffers
bandgap references
oscillators