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    ME20P03

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    gaston30-3@
    This document describes a P-channel 30V MOSFET from Matsuki Electric. It has: - Extremely low RDS(on) of 32mΩ at -10V gate voltage and 42mΩ at -4.5V due to a high density trench process. - Suitable for applications requiring low voltage, low power loss such as power management in notebooks, DC/DC converters, and load switches. - Available in a standard TO-252-3L package with absolute maximum ratings of -30V drain-source voltage, ±20V gate-source voltage, and -27.6A continuous drain current at 25°C.

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    © All Rights Reserved
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    ME20P03

    Uploaded by

    gaston30-3@
    602 views5 pages
    This document describes a P-channel 30V MOSFET from Matsuki Electric. It has: - Extremely low RDS(on) of 32mΩ at -10V gate voltage and 42mΩ at -4.5V due to a high density trench process. - Suitable for applications requiring low voltage, low power loss such as power management in notebooks, DC/DC converters, and load switches. - Available in a standard TO-252-3L package with absolute maximum ratings of -30V drain-source voltage, ±20V gate-source voltage, and -27.6A continuous drain current at 25°C.

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    fet de tv leds

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    This document describes a P-channel 30V MOSFET from Matsuki Electric. It has: - Extremely low RDS(on) of 32mΩ at -10V gate voltage and 42mΩ at -4.5V due to a high density trench process. - Suitable for applications requiring low voltage, low power loss such as power management in notebooks, DC/DC converters, and load switches. - Available in a standard TO-252-3L package with absolute maximum ratings of -30V drain-source voltage, ±20V gate-source voltage, and -27.6A continuous drain current at 25°C.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    602 views5 pages

    ME20P03

    Uploaded by

    gaston30-3@
    This document describes a P-channel 30V MOSFET from Matsuki Electric. It has: - Extremely low RDS(on) of 32mΩ at -10V gate voltage and 42mΩ at -4.5V due to a high density trench process. - Suitable for applications requiring low voltage, low power loss such as power management in notebooks, DC/DC converters, and load switches. - Available in a standard TO-252-3L package with absolute maximum ratings of -30V drain-source voltage, ±20V gate-source voltage, and -27.6A continuous drain current at 25°C.

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    ME20P03/ME20P03-G

    P- Channel 30-V (D-S) MOSFET


    GENERAL DESCRIPTION

    FEATURES

    The ME20P03 is the P-Channel logic enhancement mode power field

    RDS(ON)32m@VGS=-10V

    effect transistors are produced using high cell density, DMOS trench

    RDS(ON)42m@VGS=-4.5V

    technology. This high density process is especially tailored to

    Super high density cell design for extremely low RDS(ON)

    minimize on-state resistance. These devices are particularly suited

    Exceptional on-resistance and maximum DC current

    for low voltage application such as cellular phone and notebook

    capability

    computer power management and other battery powered circuits ,

    APPLICATIONS

    and low in-line power loss are needed in a very small outline surface

    Power Management in Note book


    DC/DC Converter

    mount package.

    PIN

    Load Switch
    LCD Display inverter

    CONFIGURATION
    (TO-252-3L)
    Top View

    e Ordering Information: ME20P03 (Pb-free)


    ME20P03-G (Green product-Halogen free )

    Absolute Maximum Ratings (TC=25 Unless Otherwise Noted)


    Symbol

    Maximum Ratings

    Unit

    Drain-Source Voltage

    VDS

    -30

    Gate-Source Voltage

    VGS

    20

    Parameter

    Continuous Drain Current*

    TC=25
    TC=70

    Pulsed Drain Current


    Maximum Power Dissipation*

    ID
    IDM

    TC=25
    TC=70

    Operating Junction Temperature


    Thermal Resistance-Junction to Case*

    PD

    -27.6
    -25.5
    -110
    39
    25

    A
    A
    W

    TJ

    -55 to 150

    RJC

    3.2

    /W

    *The device mounted on 1in2 FR4 board with 2 oz copper

    Mar, 2012-Ver1.3

    01

    ME20P03/ME20P03-G
    P- Channel 30-V (D-S) MOSFET
    Electrical Characteristics (TC=25 Unless Otherwise Specified)
    Symbol Parameter

    Limit

    Min

    VGS=0V, ID=-250A

    -30
    -1

    Typ

    Max

    Unit

    STATIC
    V(BR)DSS

    Drain-Source Breakdown Voltage

    VGS(th)

    Gate Threshold Voltage

    VDS=VGS, ID=-250A

    IGSS

    Gate Leakage Current

    IDSS

    Zero Gate Voltage Drain Current

    RDS(ON)

    Drain-Source On-State Resistancea

    VSD

    Diode Forward Voltage

    V
    -3

    VDS=0V, VGS=20V

    100

    nA

    VDS=-24V, VGS=0V

    -1

    VGS=-10V, ID= -18A

    27

    32

    VGS=-4.5V, ID= -10A

    35

    42

    -0.7

    -1.2

    IS=-1A, VGS=0V

    m
    V

    DYNAMIC
    Qg

    Total Gate Charge(10V)

    Qg

    Total Gate Charge(4.5V)

    Qgs

    Gate-Source Charge

    Qgd

    Gate-Drain Charge

    4.2

    Ciss

    Input capacitance

    804

    Coss

    Output Capacitance

    Crss

    Reverse Transfer Capacitance

    40

    td(on)
    tr
    td(off)
    tf

    Turn-On Delay Time

    37

    Turn-On Rise Time


    Turn-Off Delay Time

    21
    VDS=-15V, VGS=-4.5V, ID=-18A

    VDS=-15V, VGS=0V, F=1MHz

    VDS=-15V, RL =15
    ID=-1A, VGEN=-10V, RG=3

    Turn-On Fall Time

    10
    5

    123

    19
    54

    nC

    pF

    ns

    Notes:a. Pulse test; pulse width 300us, duty cycle 2%


    b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.

    Mar, 2012-Ver1.3

    02

    ME20P03/ME20P03-G
    P- Channel 30-V (D-S) MOSFET
    Typical Characteristics (TJ =25 Noted)

    Mar, 2012-Ver1.3

    03

    ME20P03/ME20P03-G
    P- Channel 30-V (D-S) MOSFET
    Typical Characteristics (TJ =25 Noted)

    Mar, 2012-Ver1.3

    04

    ME20P03/ME20P03-G
    P- Channel 30-V (D-S) MOSFET

    TO-252 Package Outline

    SYMBOL

    MIN

    MAX

    2.10

    2.50

    0.40

    0.90

    0.40

    0.90

    5.30

    6.30

    D1

    2.20

    2.90

    6.30

    6.75

    E1

    4.80

    5.50

    L1

    0.90

    1.80

    L2

    0.50

    1.10

    L3

    0.00

    0.20

    8.90

    10.40

    Mar, 2012-Ver1.3

    2.30 BSC

    05

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