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    Bcy 56

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    boba78
    This document provides specifications for the BCY56, a general purpose, low power NPN switching transistor. It includes dimensions, maximum ratings, electrical characteristics, and applications information. The BCY56 is intended for very high gain, low level, and low noise applications as well as low speed switching. It has a DC current gain of 200-700 and transition frequency up to 450 MHz.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Bcy 56

    Uploaded by

    boba78
    124 views2 pages
    This document provides specifications for the BCY56, a general purpose, low power NPN switching transistor. It includes dimensions, maximum ratings, electrical characteristics, and applications information. The BCY56 is intended for very high gain, low level, and low noise applications as well as low speed switching. It has a DC current gain of 200-700 and transition frequency up to 450 MHz.

    Original Description:

    bcy56 tranzistor

    Original Title

    bcy56

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    This document provides specifications for the BCY56, a general purpose, low power NPN switching transistor. It includes dimensions, maximum ratings, electrical characteristics, and applications information. The BCY56 is intended for very high gain, low level, and low noise applications as well as low speed switching. It has a DC current gain of 200-700 and transition frequency up to 450 MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    124 views2 pages

    Bcy 56

    Uploaded by

    boba78
    This document provides specifications for the BCY56, a general purpose, low power NPN switching transistor. It includes dimensions, maximum ratings, electrical characteristics, and applications information. The BCY56 is intended for very high gain, low level, and low noise applications as well as low speed switching. It has a DC current gain of 200-700 and transition frequency up to 450 MHz.

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    BCY56

    MECHANICAL DATA
    Dimensions in mm (inches)

    GENERAL PURPOSE, LOW POWER,


    NPN SWITCHING TRANSISTOR

    5.84 (0.230)
    5.31 (0.209)

    12.7 (0.500)
    min.

    5.33 (0.210)
    4.32 (0.170)

    4.95 (0.195)
    4.52 (0.178)

    0.48 (0.019)
    0.41 (0.016)
    dia.

    FEATURES
    SILICON PLANAR EPITAXIAL NPN
    TRANSISTOR
    CECC SCREENING OPTIONS
    SPACE QUALITY LEVELS OPTIONS
    JAN LEVEL SCREENING OPTIONS

    2.54 (0.100)
    Nom.

    LOW NOISE

    APPLICATIONS:

    TO-18 (TO-206AA)

    Pin 1 Emitter

    Underside View
    PAD 2 Base
    PAD 3 Collector

    Intended for general purpose very high gain


    low level and low noise applications. The
    BCY56 is also suitable for low speed
    switching applications.

    ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)


    VCBO

    Collector - Base Voltage (IE =0)

    VCEO
    IC
    PTOT
    TJ, TSTG
    R JC
    R JA

    Collector - Emitter Voltage (IB =0)


    Collector Current
    Total Power Dissipation Tamb < 25C
    Maximum Junction And Storage Temperature
    Thermal Resistance Junction to Case
    Thermal Resistance Junction to Ambient

    45V
    45V
    100mA
    300mW
    -65C to 175C
    200C/mW
    500C/mW

    Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both
    accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
    Semelab encourages customers to verify that datasheets are current before placing orders.

    Semelab plc.

    Telephone +44(0)1455 556565. Fax +44(0)1455 552612.


    E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

    Document Number 4082


    Issue 1

    BCY56

    ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated)


    Parameter

    Test Conditions

    Min.

    Typ.

    Max.

    V(BR)CBO

    Collector-Base Breakdown Voltage

    IE=0

    IC=10A

    45

    V(BR)CEO

    Collector-Emitter Breakdown Voltage

    IB=0

    IC=10mA

    45

    V(BR)EBO

    Emitter-Base Breakdown Voltage

    IC=0

    IE=10A

    ICBO

    Collector Cut-off Current

    IE=0

    VCB=20V

    100

    IEBO

    Emitter Cut-off Current

    IC=0

    VEB=5V

    100

    VBE(sat)

    Base-Emitter Saturation Voltage

    IC=2mA

    VCE=5V

    VCE(sat)

    Base-Emitter Saturation Voltage

    IC=10mA

    IB=1mA

    80

    IC=100mA

    IB=10mA

    200

    IC=10A

    VCE=5V

    40

    IC=2mA

    VCE=5V

    100

    IC=10mA

    VCE=5V

    100

    IC=0.5mA

    VCE=5V

    85

    IC=10mA

    VCE=5V

    250

    IE=0
    f=1kHz
    IC=200A
    RS=2K

    VCB=5V

    4.5

    VCE=5V

    1.5

    hFE

    fT

    DC Current Gain

    Transition Frequency

    CCBO

    Collector Capacitance

    NF

    Noise Figure

    600

    Unit
    V

    650

    200

    nA

    700
    mV

    450

    MHz
    pF
    5

    dB

    f=15kHz

    Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both
    accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
    Semelab encourages customers to verify that datasheets are current before placing orders.

    Semelab plc.

    Telephone +44(0)1455 556565. Fax +44(0)1455 552612.


    E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

    Document Number 4082


    Issue 1

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