FGPF4533

FGPF4533
330 V PDP Trench IGBT

Features
General Description
High Current Capability
Using novel trench IGBT technology, Fairchilds new series of

trench IGBTs offer the optimum performance for consumer
appliances, PDP TV and lighting applications where low conduction and switching losses are essential.
Low Saturation Voltage: VCE (sat) = 1.55 V @ IC = 50 A

High Input Impedance
Fast Switching
RoHS Compliant
Applications
PDP TV, Consumer Appliances, Lighting
GC E
TO-220F
(Retractable)
Absolute Maximum Ratings

Symbol
Description
Ratings
Unit
330
VCES
Collector to Emitter Voltage
VGES
Gate to Emitter Voltage
30
IC pulse(1)*
Collector Current
@ TC = 25oC
200
Maximum Power Dissipation
@ TC = 25oC
28.4
Maximum Power Dissipation
@ TC = 100oC
11.4
PD
TJ
Operating Junction Temperature
-55 to +150
Tstg
Storage Temperature Range
-55 to +150
TL
Maximum Lead Temp. for soldering

Purposes, 1/8 from case for 5 seconds
300
Thermal Characteristics
Symbol
RJC(IGBT)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
Max.
4.4
C/W
62.5
C/W
Unit
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 5sec
* Ic_pluse limited by max Tj
2010 Fairchild Semiconductor Corporation

FGPF4533 Rev. C1
www.fairchildsemi.com
FGPF4533 330 V PDP Trench IGBT
November 2013
Part Number
Top Mark
FGPF4533
FGPF4533
Package Packing Method

TO-220F
Parameter
Tape Width
Quantity
N/A
N/A
50
Tube
Electrical Characteristics of the IGBT

Symbol
Reel Size
TC = 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
330
0.3
V/oC
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A
BVCES
TJ
Temperature Coefficient of Breakdown

Voltage
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0 V
100
IGES
G-E Leakage Current
VGE = VGES, VCE = 0 V
400
nA
IC = 250 A, VCE = VGE
VGE = 0 V, IC = 250 A
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
2.4
3.3
4.0
IC = 20 A, VGE = 15 V
1.15
IC = 50 A, VGE = 15 V,
TC = 25oC
1.55
1.8
IC = 50 A, VGE = 15 V,
TC = 125oC
1.6
1294
pF
VCE = 30 V, VGE = 0 V,
f = 1 MHz
57
pF
41
pF
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
td(on)
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Qg
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
VCC = 200 V, IC = 20 A
RG = 5 , VGE = 15 V
Resistive Load, TC = 25oC
22
ns
40
ns
Fall Time
220
ns
Turn-On Delay Time
ns
VCC = 200 V, IC = 20 A,
RG = 5, VGE = 15 V,
Resistive Load, TC = 125oC
24
ns
42
ns
Fall Time
277
ns
Total Gate Charge
44
nC

FGPF4533 Rev. C1
VCE = 200 V, IC = 20 A
VGE = 15 V
nC
14
nC
Package Marking and Ordering Information
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics

200
200
TC = 25 C
12V
20V
10V
TC = 125 C
150
VGE = 8V
100
50
150
VGE = 8V
100
50
0
0
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage

Characteristics
1
2
3
4
5
200
Common Emitter
VCE = 10V
Common Emitter
VGE = 15V
Collector Current, IC [A]
Figure 4. Transfer Characteristics
200
TC = 25 C
150
TC = 125 C
100
50
TC = 25 C
150
TC = 125 C
100
50
0
0
1
2
3
4
Figure 5. Saturation Voltage vs. Case

Temperature at Variant Current Level
4
6
8
10
Gate-Emitter Voltage,VGE [V]
12
Figure 6. Saturation Voltage vs. VGE
1.7
20
Common Emitter
Common Emitter
VGE = 15V
1.6
12V
15V
10V
15V
20V
50A
1.5
1.4
30A
1.3
1.2
IC = 20A
1.1
1.0
TC = 25 C
16
12
50A
20
40
60
80 100 120
o
Case Temperature, TC [ C]

FGPF4533 Rev. C1
140
30A
IC = 20A
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Characteristics
20
2400
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
TC = 125 C
2000
16
Capacitance [pF]
TC = 25 C
12
50A
8
30A
1600
Cies
1200
800
Coes
400
IC = 20A
4
8
12
16
0
0.1
20
Figure 9. Gate charge Characteristics
Cres
1
10
30
Figure 10. SOA Characteristics

500
15
Common Emitter
100
Collector Current, Ic [A]
TC = 25 C
12
VCC = 100V
200V
15
30
Gate Charge, Qg [nC]
10s
100s
1ms
10 ms
10
DC
1
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
0.01
0.1
45
Figure 11. Turn-on Characteristics vs.

Gate Resistance
1
10
100
1000
Figure 12. Turn-off Characteristics vs.

Gate Resistance
1000
100
Switching Time [ns]
Switching Time [ns]
td(off)
tr
10
td(on)
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
100
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
tf
TC = 25 C
TC = 25 C
TC = 125 C
TC = 125 C
10
0
10
20
30
40
Gate Resistance, RG []

FGPF4533 Rev. C1
50
10
20
30
40
50
Figure 13. Turn-on Characteristics vs.

Collector Current
Figure 14. Turn-off Characteristics vs.

Collector Current
100
400
10
td(off)
Switching Time [ns]
Switching Time [ns]
tr
td(on)
Common Emitter
VGE = 15V, RG = 5
100
TC = 25 C
TC = 25 C
TC = 125 C
1
10
20
30
tf
Common Emitter
VGE = 15V, RG = 5
40
TC = 125 C
10
10
50
20
30
40
50
Figure 15. Switching Loss vs. Gate Resistance
Figure 16. Switching Loss vs. Collector Current

1000
5000
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
Eoff
TC = 25 C
o
TC = 125 C
Switching Loss [uJ]
Switching Loss [uJ]
1000
Eoff
100
Eon
100
Eon
10
Common Emitter
VGE = 15V, RG = 5
o
TC = 25 C
o
TC = 125 C
10
10
20
30
40
1
10
50
20
30
40
50
Figure 17. Turn off Switching SOA Characteristics

500
100
10
1
Safe Operating Area
o
VGE = 15V, TC = 125 C
0.1
1
10
100
500

FGPF4533 Rev. C1

Figure 18.Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
8
0.5
1 0.2
0.1
0.05
PDM
0.1 0.02
t1
0.01
t2
Duty Factor, D = t1/t2

Peak Tj = Pdm x Zthjc + TC
single pulse
0.01
1E-5
1E-4
1E-3
0.01
0.1
10
100
Rectangular Pulse Duration [sec]

FGPF4533 Rev. C1
Package Dimensions
Figure 19. TO-220F 3L - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003

FGPF4533 Rev. C1
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporations Anti-Counterfeiting Policy. Fairchilds Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchilds quality standards for handing and storage and provide access to Fairchilds full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.
Rev. I66

FGPF4533 Rev.C1
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower
Sync-Lock
F-PFS
AX-CAP*
FRFET
*
Global Power ResourceSM

PowerTrench
BitSiC
Build it Now
GreenBridge
PowerXS
TinyBoost
CorePLUS
Programmable Active Droop
Green FPS
TinyBuck
CorePOWER
QFET
Green FPS e-Series
TinyCalc
CROSSVOLT
QS
Gmax
TinyLogic
Quiet Series
CTL
GTO
TINYOPTO
Current Transfer Logic
RapidConfigure
IntelliMAX
TinyPower
DEUXPEED
ISOPLANAR
TinyPWM
Dual Cool
Marking Small Speakers Sound Louder
TinyWire
EcoSPARK
Saving our world, 1mW/W/kW at a time
and Better
TranSiC
EfficentMax
SignalWise
MegaBuck
TriFault Detect
SmartMax
MICROCOUPLER
ESBC
TRUECURRENT*
SMART
START
MicroFET
SerDes
Solutions for Your Success
MicroPak
SPM
MicroPak2
Fairchild
STEALTH
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SuperFET
MotionMax
FACT Quiet Series
Ultra FRFET
SuperSOT-3
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FACT
UniFET
OptoHiT
SuperSOT-6
FAST
VCX
OPTOLOGIC
SuperSOT-8
FastvCore
VisualMax
OPTOPLANAR
SupreMOS
FETBench
VoltagePlus
SyncFET
FPS
XS
Mouser Electronics
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FGPF4533

330 V PDP Trench IGBT

High Current Capability

Using novel trench IGBT technology, Fairchilds new series of

Low Saturation Voltage: VCE (sat) = 1.55 V @ IC = 50 A

PDP TV, Consumer Appliances, Lighting

Absolute Maximum Ratings

Collector to Emitter Voltage

Gate to Emitter Voltage

Maximum Power Dissipation

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

Maximum Lead Temp. for soldering

2010 Fairchild Semiconductor Corporation

FGPF4533 330 V PDP Trench IGBT

Package Packing Method

Electrical Characteristics of the IGBT

TC = 25C unless otherwise noted

Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A

Temperature Coefficient of Breakdown

Collector Cut-Off Current

VCE = VCES, VGE = 0 V

G-E Leakage Current

VGE = VGES, VCE = 0 V

IC = 250 A, VCE = VGE

G-E Threshold Voltage

Reverse Transfer Capacitance

Turn-On Delay Time

Turn-Off Delay Time

Turn-Off Delay Time

Gate to Emitter Charge

Gate to Collector Charge

Turn-On Delay Time

Total Gate Charge

2010 Fairchild Semiconductor Corporation

FGPF4533 330 V PDP Trench IGBT

Package Marking and Ordering Information

Figure 1. Typical Output Characteristics

Figure 2. Typical Output Characteristics

Figure 3. Typical Saturation Voltage

Collector Current, IC [A]

Collector Current, IC [A]

Figure 4. Transfer Characteristics

Figure 5. Saturation Voltage vs. Case

Figure 6. Saturation Voltage vs. VGE

Collector-Emitter Voltage, VCE [V]

Collector-Emitter Voltage, VCE [V]

Collector Current, IC [A]

Collector Current, IC [A]

2010 Fairchild Semiconductor Corporation

FGPF4533 330 V PDP Trench IGBT

Typical Performance Characteristics

Figure 7. Saturation Voltage vs. VGE

Figure 8. Capacitance Characteristics

Collector-Emitter Voltage, VCE [V]

Figure 9. Gate charge Characteristics

Figure 10. SOA Characteristics

Gate-Emitter Voltage, VGE [V]

Figure 11. Turn-on Characteristics vs.