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    ZTX689B ZTX689B: NPN Silicon Planar Medium Power High Gain Transistor

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    Adrian Nae
    This document provides specifications for the ZTX689B, an NPN silicon planar medium power high gain transistor. Key specifications include: - Transition frequency of 150MHz minimum - Gain of 400 minimum at 2A collector current - Very low saturation voltage of 0.1V at 0.1A collector current - Operating temperature range of -55°C to 200°C - Maximum power dissipation of 1.5W at 25°C ambient temperature

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    © All Rights Reserved
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    ZTX689B ZTX689B: NPN Silicon Planar Medium Power High Gain Transistor

    Uploaded by

    Adrian Nae
    50 views3 pages
    This document provides specifications for the ZTX689B, an NPN silicon planar medium power high gain transistor. Key specifications include: - Transition frequency of 150MHz minimum - Gain of 400 minimum at 2A collector current - Very low saturation voltage of 0.1V at 0.1A collector current - Operating temperature range of -55°C to 200°C - Maximum power dissipation of 1.5W at 25°C ambient temperature

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    Original Title

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    This document provides specifications for the ZTX689B, an NPN silicon planar medium power high gain transistor. Key specifications include: - Transition frequency of 150MHz minimum - Gain of 400 minimum at 2A collector current - Very low saturation voltage of 0.1V at 0.1A collector current - Operating temperature range of -55°C to 200°C - Maximum power dissipation of 1.5W at 25°C ambient temperature

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    50 views3 pages

    ZTX689B ZTX689B: NPN Silicon Planar Medium Power High Gain Transistor

    Uploaded by

    Adrian Nae
    This document provides specifications for the ZTX689B, an NPN silicon planar medium power high gain transistor. Key specifications include: - Transition frequency of 150MHz minimum - Gain of 400 minimum at 2A collector current - Very low saturation voltage of 0.1V at 0.1A collector current - Operating temperature range of -55°C to 200°C - Maximum power dissipation of 1.5W at 25°C ambient temperature

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    NPN SILICON PLANAR MEDIUM POWER

    HIGH GAIN TRANSISTOR

    ZTX689B
    ELECTRICAL CHARACTERISTICS (at Tamb = 25C)
    PARAMETER

    SYMBOL

    MIN.

    Transition Frequency

    fT

    150

    Input Capacitance

    Cibo

    Output Capacitance
    Switching Times

    TYP.

    MAX.

    UNIT

    CONDITIONS.

    MHz

    IC=50mA, VCE=5V
    f=50MHz

    200

    pF

    VEB=0.5V, f=1MHz

    Cobo

    16

    pF

    VCB=10V, f=1MHz

    ton
    toff

    30
    800

    ns
    ns

    IC=500mA, IB!=50mA
    IB2=50mA, VCC=10V

    THERMAL CHARACTERISTICS
    SYMBOL
    Rth(j-amb)1
    Rth(j-amb)2
    Rth(j-case)

    Thermal Resistance:Junction to Ambient1


    Junction to Ambient2
    Junction to Case

    C
    B

    E-Line
    TO92 Compatible

    ABSOLUTE MAXIMUM RATINGS.

    *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%

    PARAMETER

    ZTX689B

    ISSUE 1 MAY 94
    FEATURES
    * 20 Volt VCEO
    * Gain of 400 at IC=2 Amps
    * Very low saturation voltage
    APPLICATIONS
    * Darlington replacement
    * Flash gun convertors
    * Battery powered circuits
    * Motor drivers

    MAX.

    UNIT

    175
    116
    70

    C/W
    C/W
    C/W

    PARAMETER

    SYMBOL

    VALUE

    UNIT

    Collector-Base Voltage

    VCBO

    20

    Collector-Emitter Voltage

    VCEO

    20

    Emitter-Base Voltage

    VEBO

    Peak Pulse Current

    ICM

    Continuous Collector Current

    IC

    Practical Power Dissipation*

    Ptotp

    1.5

    Ptot

    1
    5.7

    W
    mW/C

    -55 to +200

    Power Dissipation

    Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

    at Tamb=25C
    derate above 25C

    Operating and Storage Temperature Range

    Tj:Tstg

    *The power which can be dissipated assuming the device is mounted in a typical manner on a
    P.C.B. with copper equal to 1 inch square minimum

    ELECTRICAL CHARACTERISTICS (at Tamb = 25C)


    200

    Thermal Resistance (C/W)

    Max Power Dissipation - (Watts)

    2.5
    2.0

    C
    1.5

    Am

    1.0

    0.5
    0

    -40 -20

    20 40

    bie

    as

    nt t

    te

    em

    pe

    ra

    per

    tu

    re

    at u
    re

    60 80 100 120 140 160 180 200

    D=1 (D.C.)

    t1

    D=t1/tP
    tP

    100

    D=0.5

    D=0.2
    D=0.1
    Single Pulse

    0
    0.0001

    0.001

    0.01

    0.1

    10

    100

    T -Temperature (C)

    Pulse Width (seconds)

    Derating curve

    Maximum transient thermal impedance

    3-236

    PARAMETER

    SYMBOL

    MIN.

    UNIT

    CONDITIONS.

    Collector-Base Breakdown
    Voltage

    V(BR)CBO

    20

    TYP.

    MAX.

    IC=100A

    Collector-Emitter Breakdown
    Voltage

    V(BR)CEO

    20

    IC=10mA*

    Emitter-Base Breakdown
    Voltage

    V(BR)EBO

    IE=100A

    Collector Cut-Off Current

    ICBO

    0.1

    VCB=16V

    Emitter Cut-Off Current

    IEBO

    0.1

    VEB=4V

    Collector-Emitter Saturation
    Voltage

    VCE(sat)

    0.1
    0.5

    V
    V

    IC=0.1A, IB=0.5mA*
    IC=2A, IB=10mA*

    Base-Emitter
    Saturation Voltage

    VBE(sat)

    0.9

    IC=1A, IB=10mA*

    Base-Emitter
    Turn-On Voltage

    VBE(on)

    0.9

    IC=1A, VCE=2V*

    Static Forward Current


    Transfer Ratio

    hFE

    500
    400
    150
    3-235

    IC=0.1A, VCE=2V*
    IC=2A, VCE=2V*
    IC=6A, VCE=2V*

    NPN SILICON PLANAR MEDIUM POWER


    HIGH GAIN TRANSISTOR

    ZTX689B
    ELECTRICAL CHARACTERISTICS (at Tamb = 25C)
    PARAMETER

    SYMBOL

    MIN.

    Transition Frequency

    fT

    150

    Input Capacitance

    Cibo

    Output Capacitance
    Switching Times

    TYP.

    MAX.

    UNIT

    CONDITIONS.

    MHz

    IC=50mA, VCE=5V
    f=50MHz

    200

    pF

    VEB=0.5V, f=1MHz

    Cobo

    16

    pF

    VCB=10V, f=1MHz

    ton
    toff

    30
    800

    ns
    ns

    IC=500mA, IB!=50mA
    IB2=50mA, VCC=10V

    THERMAL CHARACTERISTICS
    SYMBOL
    Rth(j-amb)1
    Rth(j-amb)2
    Rth(j-case)

    Thermal Resistance:Junction to Ambient1


    Junction to Ambient2
    Junction to Case

    C
    B

    E-Line
    TO92 Compatible

    ABSOLUTE MAXIMUM RATINGS.

    *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%

    PARAMETER

    ZTX689B

    ISSUE 1 MAY 94
    FEATURES
    * 20 Volt VCEO
    * Gain of 400 at IC=2 Amps
    * Very low saturation voltage
    APPLICATIONS
    * Darlington replacement
    * Flash gun convertors
    * Battery powered circuits
    * Motor drivers

    MAX.

    UNIT

    175
    116
    70

    C/W
    C/W
    C/W

    PARAMETER

    SYMBOL

    VALUE

    UNIT

    Collector-Base Voltage

    VCBO

    20

    Collector-Emitter Voltage

    VCEO

    20

    Emitter-Base Voltage

    VEBO

    Peak Pulse Current

    ICM

    Continuous Collector Current

    IC

    Practical Power Dissipation*

    Ptotp

    1.5

    Ptot

    1
    5.7

    W
    mW/C

    -55 to +200

    Power Dissipation

    Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

    at Tamb=25C
    derate above 25C

    Operating and Storage Temperature Range

    Tj:Tstg

    *The power which can be dissipated assuming the device is mounted in a typical manner on a
    P.C.B. with copper equal to 1 inch square minimum

    ELECTRICAL CHARACTERISTICS (at Tamb = 25C)


    200

    Thermal Resistance (C/W)

    Max Power Dissipation - (Watts)

    2.5
    2.0

    C
    1.5

    Am

    1.0

    0.5
    0

    -40 -20

    20 40

    bie

    as

    nt t

    te

    em

    pe

    ra

    per

    tu

    re

    at u
    re

    60 80 100 120 140 160 180 200

    D=1 (D.C.)

    t1

    D=t1/tP
    tP

    100

    D=0.5

    D=0.2
    D=0.1
    Single Pulse

    0
    0.0001

    0.001

    0.01

    0.1

    10

    100

    T -Temperature (C)

    Pulse Width (seconds)

    Derating curve

    Maximum transient thermal impedance

    3-236

    PARAMETER

    SYMBOL

    MIN.

    UNIT

    CONDITIONS.

    Collector-Base Breakdown
    Voltage

    V(BR)CBO

    20

    TYP.

    MAX.

    IC=100A

    Collector-Emitter Breakdown
    Voltage

    V(BR)CEO

    20

    IC=10mA*

    Emitter-Base Breakdown
    Voltage

    V(BR)EBO

    IE=100A

    Collector Cut-Off Current

    ICBO

    0.1

    VCB=16V

    Emitter Cut-Off Current

    IEBO

    0.1

    VEB=4V

    Collector-Emitter Saturation
    Voltage

    VCE(sat)

    0.1
    0.5

    V
    V

    IC=0.1A, IB=0.5mA*
    IC=2A, IB=10mA*

    Base-Emitter
    Saturation Voltage

    VBE(sat)

    0.9

    IC=1A, IB=10mA*

    Base-Emitter
    Turn-On Voltage

    VBE(on)

    0.9

    IC=1A, VCE=2V*

    Static Forward Current


    Transfer Ratio

    hFE

    500
    400
    150
    3-235

    IC=0.1A, VCE=2V*
    IC=2A, VCE=2V*
    IC=6A, VCE=2V*

    ZTX689B
    TYPICAL CHARACTERISTICS
    Tamb=25C

    IC/IB=200
    IC/IB=100
    IC/IB=10

    0.8

    VCE(sat) - (Volts)

    VCE(sat) - (Volts)

    0.8

    0.6

    0.4

    0.2

    0.01

    0.1

    0.4

    10

    0.1

    10

    VCE(sat) v IC

    VCE(sat) v IC

    VCE=2V
    1.6

    1.0

    1K

    0.8
    0.6

    500

    0.4
    0.2

    VBE(sat) - (Volts)

    1.5K

    1.2

    1.4

    -55C
    +25C
    +100C
    +175C

    IC/IB=100

    1.2
    1.0
    0.8
    0.6
    0.4
    0.2

    0.01

    0.1

    10

    1.4

    VBE(sat) v IC

    -55C
    +25C
    +100C
    +175C

    VCE=2V

    1.0
    0.8
    0.6
    0.4
    0.2
    0

    hFE v IC

    1.2

    0.1

    IC - Collector Current (Amps)

    IC - Collector Current (Amps)

    1.6

    0.01

    IC - Collector Current (Amps)

    10

    VBE - (Volts)

    0.01

    IC - Collector Current (Amps)

    hFE - Typical Gain

    hFE - Normalised Gain

    0.6

    IC - Collector Current (Amps)

    +100C
    +25C
    -55C

    1.4

    IC/IB=100

    0.2

    1.6

    -55C
    +25C
    +100C
    +175C

    0.01

    0.1

    Single Pulse Test at Tamb=25C

    0.1

    0.01
    0.1

    10

    D.C.
    1s
    100ms
    10ms
    1.0ms
    0.1ms

    10

    IC - Collector Current (Amps)

    VCE - Collector Voltage (Volts)

    VBE(on) v IC

    Safe Operating Area

    3-237

    10

    100

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