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    NPN Low Saturation Transistor: Absolute Maximum Ratings

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    NPN Low Saturation Transistor

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    NPN Low Saturation Transistor: Absolute Maximum Ratings

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    NPN Low Saturation Transistor

    Original Title

    FSB649

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    NPN Low Saturation Transistor

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    51 views3 pages

    NPN Low Saturation Transistor: Absolute Maximum Ratings

    Uploaded by

    Vicente Pando
    NPN Low Saturation Transistor

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    FSB649

    FSB649

    C
    E
    B

    SuperSOTTM-3

    NPN Low Saturation Transistor


    These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
    continuous. Sourced from Process NC.

    Absolute Maximum Ratings*


    Symbol

    TA = 25C unless otherwise noted

    Parameter

    FSB649

    Units

    VCEO

    Collector-Emitter Voltage

    25

    VCBO

    Collector-Base Voltage

    35

    VEBO

    Emitter-Base Voltage

    IC

    Collector Current - Continuous

    TJ, Tstg

    Operating and Storage Junction Temperature Range

    -55 to +150

    *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
    NOTES:
    1) These ratings are based on a maximum junction temperature of 150C.
    2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

    Thermal Characteristics

    TA = 25C unless otherwise noted

    Max
    Characteristic

    Symbol

    Units
    FSB649

    PD

    Total Device Dissipation

    500

    mW

    RJA

    Thermal Resistance, Junction to Ambient

    250

    C/W

    1999 Fairchild Semiconductor Corporation

    fsb649.lwpPrNC revA

    (continued)

    Electrical Characteristics
    Symbol

    TA = 25C unless otherwise noted

    Parameter

    Test Conditions

    Min

    Max

    Units

    OFF CHARACTERISTICS
    BVCEO

    Collector-Emitter Breakdown Voltage

    IC = 10 mA

    25

    BVCBO

    Collector-Base Breakdown Voltage

    IC = 100 A

    35

    BVEBO

    Emitter-Base Breakdown Voltage

    IE = 100 A

    ICBO

    Collector Cutoff Current

    VCB = 30 V

    100

    VCB = 30 V, TA=100C

    10

    nA
    uA

    VEB = 4V

    100

    nA

    IEBO

    Emitter Cutoff Current

    ON CHARACTERISTICS*
    hFE

    VCE(sat)

    DC Current Gain

    Collector-Emitter Saturation Voltage

    IC = 50 mA, VCE = 2 V

    70

    IC = 1 A, VCE = 2 V

    100

    IC = 2 A, VCE = 2 V

    75

    IC = 6 A, VCE = 2 V

    15

    300

    IC = 1 A, IB = 100 mA

    300

    mV

    IC = 3 A, IB = 300 mA

    600
    1.25

    VBE(sat)

    Base-Emitter Saturation Voltage

    IC = 1 A, IB = 100 mA

    VBE(on)

    Base-Emitter On Voltage

    IC = 1 A, VCE = 2 V

    50

    pF

    SMALL SIGNAL CHARACTERISTICS


    Cobo

    Output Capacitance

    VCB = 10 V, IE = 0, f = 1MHz

    fT

    Transition Frequency

    IC = 100 mA,VCE = 5 V, f=100MHz

    150

    *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

    1999 Fairchild Semiconductor Corporation

    fsb649.lwpPrNC revA

    FSB649

    NPN Low Saturation Transistor

    TRADEMARKS
    The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
    not intended to be an exhaustive list of all such trademarks.

    ACEx
    Bottomless
    CoolFET
    CROSSVOLT
    DenseTrench
    DOME
    EcoSPARK
    E2CMOSTM
    EnSignaTM
    FACT
    FACT Quiet Series

    FAST
    FASTr
    FRFET
    GlobalOptoisolator
    GTO
    HiSeC
    ISOPLANAR
    LittleFET
    MicroFET
    MICROWIRE
    OPTOLOGIC

    OPTOPLANAR
    PACMAN
    POP
    Power247
    PowerTrench
    QFET
    QS
    QT Optoelectronics
    Quiet Series
    SILENT SWITCHER
    SMART START

    STAR*POWER
    Stealth
    SuperSOT-3
    SuperSOT-6
    SuperSOT-8
    SyncFET
    TinyLogic
    TruTranslation
    UHC
    UltraFET
    VCX

    STAR*POWER is used under license

    DISCLAIMER
    FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
    NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
    DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
    OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
    RIGHTS, NOR THE RIGHTS OF OTHERS.
    LIFE SUPPORT POLICY
    FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
    DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
    As used herein:
    2. A critical component is any component of a life
    1. Life support devices or systems are devices or
    support device or system whose failure to perform can
    systems which, (a) are intended for surgical implant into
    be reasonably expected to cause the failure of the life
    the body, or (b) support or sustain life, or (c) whose
    support device or system, or to affect its safety or
    failure to perform when properly used in accordance
    with instructions for use provided in the labeling, can be
    effectiveness.
    reasonably expected to result in significant injury to the
    user.
    PRODUCT STATUS DEFINITIONS
    Definition of Terms
    Datasheet Identification

    Product Status

    Definition

    Advance Information

    Formative or
    In Design

    This datasheet contains the design specifications for


    product development. Specifications may change in
    any manner without notice.

    Preliminary

    First Production

    This datasheet contains preliminary data, and


    supplementary data will be published at a later date.
    Fairchild Semiconductor reserves the right to make
    changes at any time without notice in order to improve
    design.

    No Identification Needed

    Full Production

    This datasheet contains final specifications. Fairchild


    Semiconductor reserves the right to make changes at
    any time without notice in order to improve design.

    Obsolete

    Not In Production

    This datasheet contains specifications on a product


    that has been discontinued by Fairchild semiconductor.
    The datasheet is printed for reference information only.

    Rev. H3

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