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    MGF 0906 B

    Uploaded by

    Nguyen Van Cuong
    PA

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    © All Rights Reserved
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    MGF 0906 B

    Uploaded by

    Nguyen Van Cuong
    142 views4 pages
    PA

    Original Title

    mgf0906b

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    PA

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    142 views4 pages

    MGF 0906 B

    Uploaded by

    Nguyen Van Cuong
    PA

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    < High-power GaAs FET (small signal gain stage) >

    MGF0906B
    L & S BAND / 5W
    non - matched

    DESCRIPTION

    OUTLINE DRAWING

    The MGF0906B, GaAs FET with an N-channel schottky


    gate, is designed for L & S band applications.

    Unitmillimeters

    FEATURES
    Class A operation
    High output power
    P1dB=37.0dBm(T.Y.P) @f=2.3GHz
    High power gain
    GLP=11.0dB(TYP.)
    @f=2.3GHz
    High power added efficiency
    P.A.E=40%(TYP.)
    @f=2.3GHz,P1dB
    Hermetically sealed metal-ceramic package with ceramic lid

    17.5
    4 MIN

    6.35

    1.0

    4.8

    MGF0910S-01

    APPLICATION
    4 MIN

    For L & S band power amplifiers

    QUALITY

    IG

    14.4

    RECOMMENDED BIAS CONDITIONS


    Rg=100

    Symbol

    (Ta=25C)

    Parameter

    Ratings

    Unit

    VGDO Gate to Source Voltage

    -15

    VGSO Gate to source voltage

    -15

    ID

    Drain Current

    3.5

    IGR

    Reverse gate current

    -10

    mA

    IGF

    Forward gate current

    21

    mA

    PT*1

    Total power dissipation

    23

    Tch

    Cannel temperature

    175

    Tstg

    Storage temperature

    -65 to +175

    0.1
    1.1

    Absolute maximum ratings

    9.4

    2.26
    0.1

    Ids=1.2A

    4.5MAX

    Vds=10V

    10.0

    GATE
    SOURCE
    DRAIN

    GF-21

    *1:Tc=25C

    Electrical characteristics
    Symbol

    (Ta=25C)

    Parameter

    Test conditions

    Limits

    Unit

    Min.

    Typ.

    Max.

    IDSS

    Saturated drain current

    VDS=3V, VGS=0V

    2.5

    3.5

    gm

    Transconductance

    VDS=3V, ID=1.1A

    VGS(off)

    Gate to source cut-off voltage

    VDS=3V,ID=10mA

    -3.0

    -4.5

    P1dB

    1dB gain compression power

    VDS=10V,ID(RF off)=1.2A

    35.5

    37

    dBm

    GLP *2

    Linear power gain

    f=2.3GHz

    10

    11

    dB

    ID

    Drain current

    *2 : Pin=15dBm

    1.1

    Vf method

    P.A.E

    Power added efficiency

    Rth(ch-c) *3

    Thermal resistance

    *3 :Channel-case

    Publication Date : Dec., 2014


    CSTG-16250
    1

    40

    6.5

    C/W

    < High-power GaAs FET (small signal gain stage) >

    MGF0906B
    L & S BAND / 5W
    non - matched
    Specification are subject to change without notice.

    MGF0906B TYPICAL CHARACTERISTICS( Ta=25deg.C )

    Publication Date : Dec., 2014


    CSTG-16250
    2

    < High-power GaAs FET (small signal gain stage) >

    MGF0906B
    L & S BAND / 5W
    non - matched

    MGF0906B S-parameters( Ta=25deg.C , VDS=10(V),IDS=1.2(A) )


    S11,S22 vs. f

    S21,S12 vs. f

    Publication Date : Dec., 2014


    CSTG-16250
    3

    < High-power GaAs FET (small signal gain stage) >

    MGF0906B
    L & S BAND / 5W
    non - matched

    Keep safety first in your circuit designs!


    Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
    reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
    may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
    making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
    circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

    Notes regarding these materials


    These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
    semiconductor product best suited to the customers application; they do not convey any license under any
    intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
    Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any
    third-partys rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
    circuit application examples contained in these materials.
    All information contained in these materials, including product data, diagrams, charts, programs and
    algorithms represents information on products at the time of publication of these materials, and are subject
    to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It
    is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized
    Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product
    listed herein.
    The information described here may contain technical inaccuracies or typographical errors. Mitsubishi
    Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these
    inaccuracies or errors.
    Please also pay attention to information published by Mitsubishi Electric Corporation by various means,
    including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
    When using any or all of the information contained in these materials, including product data, diagrams,
    charts, programs, and algorithms, please be sure to evaluate all information as a total system before making
    a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes
    no responsibility for any damage, liability or other loss resulting from the information contained herein.
    Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or
    system that is used under circumstances in which human life is potentially at stake. Please contact
    Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
    considering the use of a product contained herein for any specific purposes, such as apparatus or systems
    for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
    The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or
    in part these materials.
    If these products or technologies are subject to the Japanese export control restrictions, they must be
    exported under a license from the Japanese government and cannot be imported into a country other than
    the approved destination.
    Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
    destination is prohibited.
    Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor
    for further details on these materials or the products contained therein.

    2014 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.

    Publication Date : Dec., 2014


    CSTG-16250
    4

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