Semiclassical Transport
Semiclassical Transport
Semiclassical Transport
Branislav K. Nikoli
Quasiparticle Propagation:
Bloch Wavepackets
Wavepackets represent quasiparticle localized in space:
(r ) =
C ( t ) ( r )
k
k
PHYS 624: Semiclassical Electron Transport
k
Semiclassical Dynamics of
Bloch Wavepackets
Wavepacket in external field described by potential W (r )
ext
2 2
2m + U (r ) + Wext (r ) (r ) = i t
Ck (t) (k ) +Wext (r ) k (r ) = i
t
k
iRk
Band energy is periodic function in the reciprocal space (k ) = R e
R
R
ikR
(i)k (r ) =
e k (r ) =
(r + R) =
e Rk (r ) = (k )k (r )
R
R k
(r)
i ) +Wext (r)] k (r) = i [(i) +Wext (r)] (r) = i
Ck (t)[(
t
t
k
R
dk2
correspondence principle: i
p
H ( r , p ) = E + W ext ( r )
1 (k )
H (r , p )
v =
=
k
p
2
d 1 (k ) 1 (k ) k
= 2
a=
dt k k k t
k
H
= = W ext ( r )
t
r
1
tensor of inverse effective mass:
m
PHYS 624: Semiclassical Electron Transport
1 (k )
= 2
k k
eE
gap
kF
gap
gap
eB
gap
The magnitude of magnetic fields cannot be too large:
F
m
=gapacross
1
e
3
j = 3 k (k )
dk
3
8 First BZ
(2 )
Full band of states is insulating!
time reversal invariance: ( k ) = ( k ) ( k ) = ( k )
1
v k = k (k ) = k (k ) = vk j 0 for insulator
1
1
e
e
3
3
(k )
(k )
j
=
dk
j = 3
d
k
3
3
k
3
k
8 Empty k
(2 )
8 Occupied k
(2 )
1
e
1
e
3
3
j = 3 k (k )
d k 3 k (k )
dk
3
3
8 First BZ
(2 )
8 Empty k
(2 )
Properties of Holes
A nearly full simple band has states near the Fermi surface that can
be thermally or electrically excited of a negative mass Density of
states with holes at the top of the band which have positive charge and
positive mass
d 2 ( k )
1
1 d (k )
*
2
m
=
=
<0
top
*
2
2
2
2
m
dk
2 ta
k = / a
dk
2k 2
1 d
eE
2 2
top = 0 2 t + ta k = 0 2 t +
(
)
v
=
k
=
k
2m*
dt
| m* |
2
An insulator forms when Fermi energy falls within the gap of the
density of states as the temperature is raised, electrons are
-E / k T
promoted over the gap n e g B and both electrons and holes
contribute to the conductivity which increases with temperature.
PHYS 624: Semiclassical Electron Transport
1
e ( ( k ) F ) + 1
eE
no scattering: f ( r , k , t ) = f ( r vdt , k +
dt , t dt )
eE
f
f (r, k,t) = f (r vdt, k + dt,t dt) +
dt
t scattering
e
n(r ) =
dk f ( r , k , t )
3
8
e
j (r ) =
dk v ( k ) f ( r , k , t )
3
8
PHYS 624: Semiclassical Electron Transport
Boltzmann Equation
eE
f
f
f (r , k , t ) = f (r , k , t ) v +
f +
r
t
k
t scattering
eE
f
f =
f +v f +
t
r
k
t scattering
If the phonon and defect perturbations are small, time-independent,
and described
a Bloch
by Hamiltonian H , then the scattering rate from
2
state k to k (occupied to unoccupied) is wkk = 2 k H k
V
f
dk (1 f ( k )) wkk f ( k ) (1 f ( k )) wkk f ( k )
=
3
t scattering (2 )
f
t scattering
f (k ) feq (k )
=
(k )
f feq
f f
t /
=
=
=
=
f
f
f
(
t
0)
f
e
eq
eq
t t scattering
In the steady state transport regime induced by a time-independent
external
electric field:
f
e f f
f (k ) f (k )
f
=
= 0, = 0 E =
k t scattering
r
(k )
t
f (k )
e
f ( k ) = f eq ( k ) + ( k ) E
k
PHYS 624: Semiclassical Electron Transport
e
f ( k ) f eq ( k ) + ( k ) E
f eq ( k )
k
e
E = E x x f ( k ) f eq k + ( k ) E x
mv + ( v v
) = eE
therm
vD
e
ne2
steady state: vD = E j = envD =
E
m
m
ne2
Ohmic conductivity: j = E =
m
e
Mobility: = ne =
m
PHYS 624: Semiclassical Electron Transport
Drude Conductivity:
Bloch-Boltzmann Derivation
Quantum Mechanics (1927) makes Drude reasoning problematic
not all electrons can participate in the conduction due to the Pauli
principle!
e (k ) feq
e
e
j = 3 dk v(k ) f (k ) 3 dk v(k ) feq (k ) +
Ex
k x
8
8
isotropic material: j y = jz = 0
feq (k )
k x
v k = vk vk feq (k )dk = 0
f E f eq
vx ( E EF )vx
=
=
E k x E
jx
e
8
2 f eq
E x dk v x ( k )
= Ex
E
Drude-Boltzmann Conductivity as a
Fermi Surface Property
dE
dk = dSE dk = dS E
v(k )
2
jx
v (k )
vx ( k )
e
e
=
= 3 dS E dE (k ) ( E EF ) = 3 dS E (k )
Ex 8
8 E = EF
v(k )
v(k )
2
vx (k ) 4 3
4 3
k
spherical Fermi surface: dSE (k ) =
kF ( EF )v( EF ) =
kF ( EF ) *F
2
x
E = EF
v( k )
k F
4 3
k
E
(
)
=
F
F
8 3 3
m*
e2
e 2 ( E F )
= 2
n
*
3
k F = 3 n
m
k BT E F
Temperature Dependence of
Drude-Boltzmann Conductivity
Mattheiesen Rule: the phonon and defect scattering mechanism are
independent
phonon
defect
= phonon + defect
T TDebye = aT + defect
PHYS 624: Semiclassical Electron Transport
Drift-Diffusion approximation to
Boltzmann Equation for Semiconductors
The drift-diffusion equations are derived introducing the mobility = e / m* and
2
*
replacing v = kBT / m with its average equilibrium value, therefore neglecting
thermal effects. The diffusion coefficient D = kBT / e (Einstein's relation) is
also introduced, and the resulting drift-diffusion current is:
1
n
dn ( x )
jn = e n n ( x ) E ( x ) + eDn
t = e j n + U n
dx
C o n tin u ity:
dp ( x )
p = 1 j + U
p
j p = e p p ( x ) E ( x ) eD p
t
e
dx q ( n p + N N + )
A
D
Poisson: 2V =