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    RF & Microwave Discrete Low Power Transistors: Features

    Uploaded by

    Massimo Maestrale
    This document provides specifications for the 2N5179 RF & microwave discrete low power transistor. The transistor is a silicon NPN device in a TO-72 package, designed for VHF and UHF applications such as pre-drivers, low noise amplifiers, and oscillators. Key features include a noise figure of 4.5 dB max at 200 MHz and a current-gain bandwidth product of 1.4 GHz typical at 10 mA collector current. Electrical specifications including gain, breakdown voltages, capacitance and S-parameters are provided.

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    RF & Microwave Discrete Low Power Transistors: Features

    Uploaded by

    Massimo Maestrale
    21 views5 pages
    This document provides specifications for the 2N5179 RF & microwave discrete low power transistor. The transistor is a silicon NPN device in a TO-72 package, designed for VHF and UHF applications such as pre-drivers, low noise amplifiers, and oscillators. Key features include a noise figure of 4.5 dB max at 200 MHz and a current-gain bandwidth product of 1.4 GHz typical at 10 mA collector current. Electrical specifications including gain, breakdown voltages, capacitance and S-parameters are provided.

    Original Description:

    2n5179

    Original Title

    2n5179

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    This document provides specifications for the 2N5179 RF & microwave discrete low power transistor. The transistor is a silicon NPN device in a TO-72 package, designed for VHF and UHF applications such as pre-drivers, low noise amplifiers, and oscillators. Key features include a noise figure of 4.5 dB max at 200 MHz and a current-gain bandwidth product of 1.4 GHz typical at 10 mA collector current. Electrical specifications including gain, breakdown voltages, capacitance and S-parameters are provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    21 views5 pages

    RF & Microwave Discrete Low Power Transistors: Features

    Uploaded by

    Massimo Maestrale
    This document provides specifications for the 2N5179 RF & microwave discrete low power transistor. The transistor is a silicon NPN device in a TO-72 package, designed for VHF and UHF applications such as pre-drivers, low noise amplifiers, and oscillators. Key features include a noise figure of 4.5 dB max at 200 MHz and a current-gain bandwidth product of 1.4 GHz typical at 10 mA collector current. Electrical specifications including gain, breakdown voltages, capacitance and S-parameters are provided.

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    140 COMMERCE DRIVE

    MONTGOMERYVILLE, PA
    18936-1013
    PHONE: (215) 631-9840
    FAX: (215) 631-9855

    2N5179
    RF & MICROWAVE DISCRETE
    LOW POWER TRANSISTORS

    Features

    Silicon NPN, TO-72 packaged VHF/UHF Transistor

    Low Noise, NF = 4.5 dB (max) @ 200 MHz

    High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc


    2

    Characterized with S-Parameters

    3
    4

    1. Emitter
    2. Base
    3. Collector
    4. Case

    TO-72

    DESCRIPTION:
    Silicon NPN transistor, designed for VHF and UHF equipment. Ideal for pre-driver, low noise amplifier, and oscillator
    applications.

    ABSOLUTE MAXIMUM RATINGS (Tcase = 25C)


    Symbol
    VCEO

    Parameter
    Collector-Emitter Voltage

    Value
    12

    Unit
    Vdc

    VCBO
    VEBO

    Collector-Base Voltage

    20

    Vdc

    Emitter-Base Voltage

    2.5

    Vdc

    IC

    Collector Current

    50

    mA

    300
    1.71

    mWatts
    mW/ C

    Thermal Data
    PD

    Total Device Dissipation @ TA = 25C


    Derate above 25C

    MSC1305.PDF 10-25-99

    2N5179
    ELECTRICAL SPECIFICATIONS (Tcase = 25C)

    STATIC
    (off)
    Symbol
    VCEO(sus)
    BVCBO
    BVEBO
    ICBO

    Test Conditions

    Value
    Min.

    Typ.

    Max.

    Unit

    Collector-Emitter Sustaining Voltage


    (IC = 3.0 mAdc, IB = 0)

    12

    Vdc

    Collector-Base Breakdown Voltage


    (IC=1.0 Adc, IE=0)

    20

    Vdc

    Emitter Base Breakdown Voltage


    (IE = 0.01 mAdc, IC = 0)

    2.5

    .02

    DC Current Gain
    (IC = 3.0 mAdc, VCE = 1.0 Vdc)

    25

    250

    Base-Emitter Saturation Voltage


    (IC = 10 mAdc, IB = 1.0 mAdc)

    1.0

    Vdc

    Collector-Emitter Saturation Voltage


    (IC = 10 mAdc, IB = 1.0 mAdc)

    0.4

    Vdc

    Collector Cutoff Current


    (VCB = 15 Vdc, IE = 0)

    Vdc

    (on)
    HFE
    VBE(sat)
    VCE(sat)

    DYNAMIC
    Symbol
    fT
    CCB

    Test Conditions
    Current-Gain - Bandwidth Product
    (IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz)
    Collector-base Capacitance
    (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

    MSC1305.PDF 10-25-99

    Value
    Min.

    Typ.

    Max.

    Unit

    900

    1500

    MHz

    1.0

    pF

    2N5179

    FUNCTIONAL
    Symbol
    NF
    GPE

    Test Conditions
    Noise Figure (figure 1)
    Common-Emitter Amplifier
    Power Gain (figure 1)

    PIN
    (RS=50 OHMS)

    Value
    Min.

    Typ.

    Max.

    Unit

    IC = 1.5 mAdc, VCE = 6.0


    Vdc, f = 200 MHz

    4.5

    dB

    IC = 1.5 mAdc, VCE = 6.0


    Vdc, f = 200 MHz

    20

    dB

    POUT
    (RL=50 OHMS)

    Figure 1. 200 MHz Amplifier for Power Gain and Noise Figure specifications.

    MSC1305.PDF 10-25-99

    2N5179

    FUNCTIONAL (CONT)
    Symbol

    U max

    MAG
    2

    |S21|

    Test Conditions
    Maximum Unilateral Gain (1)
    Maximum Available Gain
    Insertion Gain

    Value
    Min.

    Typ.

    Max.

    Unit

    IC = 5 mAdc, VCE = 6.0 Vdc,


    f = 200 MHz

    17

    dB

    IC = 5 mAdc, VCE = 6.0 Vdc,


    f = 200 MHz

    18

    dB

    IC = 5 mAdc, VCE = 6.0 Vdc,


    f = 200 MHz

    12

    dB

    Note: 1. Maximum Unilateral Gain = |S21|2 / (1 - |S11|2) (1 - |S22|2)

    Table 1. Common Emitter S-Parameters, @ VCE = 6 V, IC = 5 mA

    S11

    S21

    S12

    S22

    (MHz)

    |S11|

    |S21|

    |S12|

    |S22|

    100

    .471

    -90

    6.78

    122

    .023

    64

    .844

    -51

    200

    .314

    -145

    4.20

    100

    .034

    58

    .780

    -93

    300

    .230

    156

    2.76

    91

    .043

    65

    .768

    -134

    400

    .171

    108

    2.17

    86

    .056

    63

    .756

    -177

    500

    .168

    54

    1.86

    79

    .062

    62

    .741

    140

    600

    .149

    -9

    1.53

    71

    .069

    66

    .740

    98

    700

    .137

    -72

    1.31

    67

    .073

    71

    .739

    54

    800

    .119

    -129

    1.18

    64

    .092

    74

    .744

    900

    .153

    -174

    1.13

    58

    .101

    68

    .742

    -38

    1000

    .171

    122

    .979

    49

    .106

    71

    .749

    -82

    MSC1305.PDF 10-25-99

    2N5179

    MSC1305.PDF 10-25-99

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