Scribd Logo
Upload

Welcome to Scribd!

  • 173 views

    Arf1500 PDF

    Uploaded by

    bookreader1968
    The ARF1500 is an RF power transistor designed for high power RF applications up to 40 MHz. It can provide up to 750W of output power at 125V with a gain of 17dB and efficiency over 75% at 27.12 MHz. It has a high breakdown voltage of 500V, low thermal resistance, and nitride passivation for improved reliability. A test circuit diagram and parts list are provided for evaluating the transistor's performance at 27.12 MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Arf1500 PDF

    Uploaded by

    bookreader1968
    173 views4 pages
    The ARF1500 is an RF power transistor designed for high power RF applications up to 40 MHz. It can provide up to 750W of output power at 125V with a gain of 17dB and efficiency over 75% at 27.12 MHz. It has a high breakdown voltage of 500V, low thermal resistance, and nitride passivation for improved reliability. A test circuit diagram and parts list are provided for evaluating the transistor's performance at 27.12 MHz.

    Original Title

    ARF1500.pdf

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    The ARF1500 is an RF power transistor designed for high power RF applications up to 40 MHz. It can provide up to 750W of output power at 125V with a gain of 17dB and efficiency over 75% at 27.12 MHz. It has a high breakdown voltage of 500V, low thermal resistance, and nitride passivation for improved reliability. A test circuit diagram and parts list are provided for evaluating the transistor's performance at 27.12 MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    173 views4 pages

    Arf1500 PDF

    Uploaded by

    bookreader1968
    The ARF1500 is an RF power transistor designed for high power RF applications up to 40 MHz. It can provide up to 750W of output power at 125V with a gain of 17dB and efficiency over 75% at 27.12 MHz. It has a high breakdown voltage of 500V, low thermal resistance, and nitride passivation for improved reliability. A test circuit diagram and parts list are provided for evaluating the transistor's performance at 27.12 MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    You are on page 1of 4

    S

    ARF1500

    ARF1500
    BeO

    RF POWER MOSFET
    N - CHANNEL ENHANCEMENT MODE

    1525-xx

    125V

    750W

    40MHz

    The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial
    RF power generator and amplifier applications up to 40 MHz.
    Specified 125 Volt, 27.12 MHz Characteristics:

    Output Power = 750 Watts.

    Gain = 17dB (Class C)

    Efficiency > 75%

    High Performance Power RF Package.


    Very High Breakdown for Improved Ruggedness.
    Low Thermal Resistance.
    Nitride Passivated Die for Improved Reliability.

    RoHS Compliant

    All Ratings: TC = 25C unless otherwise specified.

    MAXIMUM RATINGS
    Symbol
    VDSS

    Parameter
    Drain-Source Voltage
    Continuous Drain Current @ TC = 25C

    ID
    VGS

    Gate-Source Voltage

    PD

    Total Device Dissipation @ TC = 25C

    TJ,TSTG
    TL

    ARF1500

    UNIT

    500

    Volts

    60

    Amps

    30

    Volts

    1500

    Watts

    -55 to 175

    Operating and Storage Junction Temperature Range

    300

    Lead Temperature: 0.063" from Case for 10 Sec.

    STATIC ELECTRICAL CHARACTERISTICS


    Symbol
    BVDSS
    VDS(ON)
    IDSS
    IGSS
    gfs

    Characteristic / Test Conditions

    MIN

    Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A)

    500

    On State Drain Voltage

    (I D(ON) = 30A, VGS = 10V)

    TYP

    MAX

    7.5
    100

    Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)


    Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C)

    1000

    Gate-Source Leakage Current (VGS = 30V, VDS = 0V)

    400

    Forward Transconductance (VDS = 25V, ID = 30A)

    Visolation

    RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute)

    VGS(TH)

    Gate Threshold Voltage (VDS = VGS, ID = 50mA)

    7.5

    UNIT
    Volts
    A
    nA
    mhos

    TBD

    Volts

    Volts

    MAX

    UNIT

    MIN

    TYP

    0.10

    RJC

    Junction to Case

    RJHS

    Junction to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)

    0.16

    CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

    Microsemi Website - http://www.microsemi.com

    C/W

    050-5965 Rev E

    Symbol Characteristic (per package unless otherwise noted)

    10-2008

    THERMAL CHARACTERISTICS

    DYNAMIC CHARACTERISTICS
    Symbol

    ARF1500
    MIN

    TYP

    MAX

    5150

    6030

    VDS = 150V
    f = 1 MHz

    500

    650

    215

    225

    Test Conditions

    Characteristic

    Ciss

    Input Capacitance

    Coss

    Output Capacitance

    Crss

    Reverse Transfer Capacitance

    td(on)

    Turn-on Delay Time

    VGS = 15V

    7.5

    Rise Time

    VDD = 250

    6.0

    ID = 60A @ 25C

    20

    RG = 1.6

    10

    tr
    td(off)
    tf

    VGS = 0V

    Turn-off Delay Time


    Fall Time

    UNIT

    pF

    ns

    FUNCTIONAL CHARACTERISTICS
    Symbol
    GPS

    Characteristic
    Common Source Amplifier Power Gain

    Test Conditions

    MIN

    TYP

    f = 27.12 MHz

    17

    19

    dB

    70

    75

    VGS = 0V

    Drain Efficiency
    Electrical Ruggedness VSWR 10:1

    VDD = 125V

    Pout = 750W

    MAX

    UNIT

    No Degradation in Output Power

    Pulse Test: Pulse width < 380 S, Duty Cycle < 2%.

    Microsemi reserves the right to change, without notice, the specifications and information contained herein.

    Per transistor section unless otherwise specified.


    20,000
    10,000
    Ciss

    CAPACITANCE (pf)

    5000

    1000

    Coss

    500

    Crss

    100
    .1
    1
    10
    100 200
    VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
    Figure 1, Typical Capacitance vs. Drain-to-Source Voltage

    240

    50

    VDS> ID(ON) x RDS(ON) MAX.


    250SEC. PULSE TEST
    @ <0.5 % DUTY CYCLE

    TJ = -55C
    40
    30
    20
    10

    TJ = +25C
    TJ = +125C

    0
    2
    4
    6
    8
    10
    12
    14
    VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
    Figure 2, Typical Transfer Characteristics

    DATA FOR BOTH SIDES


    IN PARALLEL

    ID, DRAIN CURRENT (AMPERES)

    ID, DRAIN CURRENT (AMPERES)

    050-5965 Rev E

    10-2008

    60

    100

    OPERATION HERE
    LIMITED BY R
    (ON)
    DS

    50

    10

    100us

    1ms

    5
    TC =+25C
    TJ =+200C
    SINGLE PULSE
    1
    1
    5 10
    50 100
    500
    VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
    Figure 3, Typical Maximum Safe Operating Area

    10ms
    100ms

    ARF1500

    1.10

    ID, DRAIN CURRENT (AMPERES)

    VGS(th), THRESHOLD VOLTAGE


    (NORMALIZED)

    1.15

    1.05
    1.00
    0.95
    0.90
    0.85
    0.80

    10.2V

    8.2V

    6.2V

    4.2V

    2.2V
    1

    0.75
    -50 -25

    0
    25 50 75 100 125 150
    TC, CASE TEMPERATURE (C)
    Figure 4, Typical Threshold Voltage vs Temperature

    2V
    0
    5
    10
    15
    VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
    Figure 5, Typical Output Characteristics

    0.10

    D = 0.9

    0.08

    0.7

    0.06

    0.5

    0.04

    Note:

    PDM

    Z JC, THERMAL IMPEDANCE (C/W)

    0.12

    0.3

    t1
    t2

    0.02

    0.05
    0

    Duty Factor D = 1/t2


    Peak TJ = PDM x ZJC + TC

    0.1

    10-5

    SINGLE PULSE
    10-4

    10-3
    10-2
    10 -1
    RECTANGULAR PULSE DURATION (SECONDS)
    Figure 6, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration

    1.0

    Table 1 - Typical Class AB Large Signal Impedance -- ARF1500


    F (MHz)
    2.0
    13.5
    27
    40

    Zin ()
    6.7-j 12
    0.45 -j 2.5
    0.22 -j 0.67
    0.2 + j .19

    ZOL ()
    7.5 -j 0.8
    7.1 -j 1.7
    6.1 -j 3.0
    5.0 -j 3.6

    Zin - Gate shunted with 25 IDQ = 100mA


    ZOL - Conjugate of optimum load for 750 Watts
    output at Vdd = 125V

    Clamp

    1.065
    .250
    S

    Thermal Considerations and Package Mounting:

    .500

    Heat Sink

    The rated 1500W power dissipation is only available


    when the package mounting surface is at 25C and the
    junction temperature is 175C. The thermal resistance between junctions and case mounting surface
    is 0.10C/W. When installed, an additional thermal
    impedance of 0.06C/W between the package base and
    the mounting surface is smooth and flat. Thermal joint
    compound must be used to reduce the effects of small
    surface irregularities. The heatsink should incorporate a
    copper heat spreader to obtain best results.

    ARF15-BeO

    1525-xx

    1.065

    .045
    S

    .207

    .375

    .207

    .500

    .105 typ.

    HAZARDOUS MATERIAL WARNING


    D

    G
    S

    The ceramic portion of the device between


    leads and mounting surface is beryllium oxide,
    BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling
    and mounting to avoid damage to this area .
    These devices must never be thrown away
    with general industrial or domestic waste.

    10-2008

    .005

    050-5965 Rev E

    The package is designed to be clamped to a heatsink. A


    clamped joint maintains the required mounting pressure
    while allowing for thermal expansion of both the device
    and the heat sink. A simple clamp, and two 6-32 (M3.5)
    screws can provide the minimum 125 lb. required
    mounting force. T=4-6 in-lb. Please refer to App Note
    1802 "Mounting Instructions for Flangeless Packages."

    C7

    L5

    C9

    C10

    L4
    RF
    Input

    +
    125V
    -

    C8

    Output
    L3

    L1

    L2

    C4

    TL1

    C11

    C5
    R1
    C1

    C2

    C3

    ARF1500
    27.12 MHz Test Circuit

    C1,C11 ARCO 465 50-450pF mica trimmer


    C2 1500pF ATC 700B
    C3 2x 3300 pF ATC 700B
    C4 8200pF 500V NPO ceramic
    C5 150pF 500V NPO
    C7-C8 .1uF 250V ceramic chip
    C9- C10 1000pF Z5U 500V
    L1 120 nH 5t #20 .25"d .3"l
    L2 20 nH #20 hairpin loop .3" x .125"
    L3 175 nH - 4t #10 .625" dia .875" l
    L4 2uH - 22t #24 enam. .312" dia.
    L5 500nH 2t on 850u .5" bead
    R1 51 .5W
    TL1 .25" x 1.75" (30 ) Stripline

    27 MHz Test Amp


    ARF1500

    BeO
    135-05

    ARF1500

    J1

    J2

    RF 3-02

    Parts placement

    050-5965 Rev E

    10-2008

    27 MHz Test Amp


    ARF1500

    RF 3-02

    1:1 pcb artwork

    You might also like