60V

KIA
SEMICONDUCTORS
N-CHANNEL MOSFET 65N06

1.Description

These N-Channel enhancement mode power field effect transistors are produced using
KIAs proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored
to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse
in the avalanche and commutation mode. These devices are well suited for low voltage applications such
as automotive, DC/DC converters, and high efficiency switching for power management in portable and
battery operated products.

2. Features

65A, 60V, RDS(on)= 0.016 @VGS= 10 V

Low gate charge ( typical 48nC)
Low Crss ( typical 32.5pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175 maximum junction temperature rating
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3. Pin configuration

Pin Function

1 Gate

2 Drain

3 Source

4 Drain

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 60V
KIA
SEMICONDUCTORS
N-CHANNEL MOSFET 65N06

4. Absolute maximum ratings

(TC= 25 C , unless otherwise specified)

Parameter Symbol Rating Units
Drain-source voltage VDSS 60 V
Tc=25 C 65 A
Drain current ID
Tc=100 C 40 A
Drain current pulsed (note 1) IDM 260 A
Gate-source voltage VGSS 20 V
Single pulsed avalanche energy (note 2) EAS 650 mJ
Avalanche current (note 1) IAR 65 A
Repetitive avalanche energy (note 1) EAR 15.0 mJ
Peak diode recovery dv/dt (note 3) dv/dt 7.0 V/ns
Tc=25 C 150 W
Power dissipation PD
derate above 25 C 1.00 W/C
Operating and Storage temperature range TJ , TSTG -55 ~ +175 C
Maximum lead temperature for soldering
TL 300 C
purposes,1/8 from case for 5 seconds

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5. Thermal characteristics

Parameter Symbol Min Max Unit

Thermal resistance,Junction-to-case RJC 1.00 C /W
Thermal resistance,case-to-sink RCS 0.5 C /W
Thermal resistance,Junction-to-ambient RJA 62.5 C /W

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 60V
KIA
SEMICONDUCTORS
N-CHANNEL MOSFET 65N06

6. Electrical characteristics
(TJ=25C,unless otherwise notes)
Parameter Symbol Conditions Min Typ Max Unit
Off characteristics
Drain-source breakdown voltage BVDSS VGS=0V,ID=250A 60 V
Breakdown voltage temperature ID=250A,
BVDSS/TJ 0.07 V/C
coefficient referenced to 25 C
VDS=60V ,VGS=0V 1 A
Zero gate voltage drain current IDSS
VDS=48V ,TC=150C 10 A
Gate-body leakage Forward IGSSF VGS=20V,VDS=0V 100 nA
current Reverse IGSSR VGS=-20V,VDS=0V -100 nA
On characteristics
Gate threshold voltage VGS(th) VDS=VGS, ID=250A 2.0 4.0 V
Static drain-source on-resistance RDS(on) VGS=10V,ID=39A 0.015 0.016
Forward transconductance gFS VDS=25V, ID=32.5A (note4) 100 S
Dynamic characteristics
Input capacitance Ciss 2000 pF
Output capacitance Coss VDS=25V,VGS=0V,f=1.0MHz 450 pF
Reverse transfer capacitance Crss 32.5 pF
Switching characteristics
Turn-on delay time td(on) 12 ns
VDD=30V,ID=39A,RG=4.7
Turn-on rise time tr 33 ns
RD=0.77,VGS=10V
Turn-off delay time td(off) 41 ns
(note4,5)
Turn-off fall time tf www.DataSheet.net/
12 ns
Total gate charge Qg 40 nC
VDS=30V, ID=39A,VGS=10V,
Gate-source charge Qgs 8 nC
(note4,5)
Gate-drain charge Qgd 12 nC
Drain-source diode characteristics and maximum rating
Maximum continuous drain-source
IS 65 A
diode forward current
Maximum pulsed drain-source diode
ISM 260 A
forward current
Drain-source diode forward voltage VSD VGS=0V,IS=65A 1.5 V
Reverse recovery time trr VGS=0V,IS=65A 60 ns
Reverse recovery charge Qrr dIF/dt=100A/s (note4) 100 C
Note:1.repetitive rating:pulse width limited by maximum junction temperature
2.L=180H,IAS=65A,VDD=25V,RG=25,staring TJ=25C
3.ISD<65A,di/dt<100A/s,VDD<BVDSS,staring TJ=25 C
4.Pulse test:pulse width<300s,duty cycle<2%
5.Essentially independent of operating temperature

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 60V
KIA
SEMICONDUCTORS
N-CHANNEL MOSFET 65N06

7.Test circuits and waveforms

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 60V
KIA
SEMICONDUCTORS
N-CHANNEL MOSFET 65N06

www.DataSheet.net/

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Datasheet pdf - http://www.DataSheet4U.co.kr/

 60V
KIA
SEMICONDUCTORS
N-CHANNEL MOSFET 65N06

www.DataSheet.net/

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Datasheet pdf - http://www.DataSheet4U.co.kr/

 60V
KIA
SEMICONDUCTORS
N-CHANNEL MOSFET 65N06

www.DataSheet.net/

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