Product Profile: 60 V, 360 Ma N-Channel Trench MOSFET
Product Profile: 60 V, 360 Ma N-Channel Trench MOSFET
Product Profile: 60 V, 360 Ma N-Channel Trench MOSFET
1. Product profile
1.3 Applications
High-speed line driver Relay driver
Low-side loadswitch Switching circuits
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NXP Semiconductors 2N7002P
60 V, 360 mA N-channel Trench MOSFET
2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
3 D
2 S source
3 D drain
G
1 2
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
2N7002P TO-236AB plastic surface-mounted package; 3 leads SOT23
4. Marking
Table 4. Marking codes
Type number Marking code[1]
2N7002P LW%
[1] % = -: made in Hong Kong; % = p: made in Hong Kong; % = t: made in Malaysia; % = W: made in China
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tamb = 25 C - 60 V
VGS gate-source voltage -20 20 V
ID drain current VGS = 10 V; Tamb = 25 C [1] - 360 mA
VGS = 10 V; Tamb = 100 C [1] - 280 mA
IDM peak drain current Tamb = 25 C; single pulse; tp 10 s - 1.2 A
Ptot total power dissipation Tamb = 25 C [2] - 350 mW
[1] - 420 mW
Tsp = 25 C - 1140 mW
Tj junction temperature - 150 C
Tamb ambient temperature -55 150 C
Tstg storage temperature -65 150 C
Source-drain diode
IS source current Tamb = 25 C [1] - 360 mA
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
2N7002P All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
017aaa001 017aaa002
120 120
Pder Ider
(%) (%)
80 80
40 40
0 0
75 25 25 75 125 175 75 25 25 75 125 175
Tamb (C) Tamb (C)
Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a
function of ambient temperature function of ambient temperature
017aaa014
10
ID
(A)
1
(1)
(2)
101
(3)
(4)
(5)
102
(6)
103
101 1 10 102
VDS (V)
2N7002P All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance in free air [1] - 310 370 K/W
from junction to [2] - 260 300 K/W
ambient
Rth(j-sp) thermal resistance - - 115 K/W
from junction to solder
point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
017aaa015
103
0.02
10 0.01
0
1
103 102 101 1 10 102 103
tp (s)
017aaa016
103
Zth(j-a)
duty cycle = 1
(K/W)
0.75
0.5
102 0.33
0.25
0.2
0.1 0.05
0 0.02
10 0.01
1
103 102 101 1 10 102 103
tp (s)
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source ID = 10 A; VGS = 0 V; Tj = 25 C 60 - - V
breakdown voltage
VGSth gate-source threshold ID = 250 A; VDS = VGS; Tj = 25 C 1.1 1.75 2.4 V
voltage
IDSS drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 C - - 1 A
VDS = 60 V; VGS = 0 V; Tj = 150 C - - 10 A
IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 C - - 100 nA
VGS = -20 V; VDS = 0 V; Tj = 25 C - - 100 nA
RDSon drain-source on-state VGS = 5 V; ID = 50 mA; pulsed; - 1.3 2
resistance tp 300 s; 0.01 ; Tj = 25 C
VGS = 10 V; ID = 500 mA; pulsed; - 1 1.6
tp 300 s; 0.01 ; Tj = 25 C
gfs forward VDS = 10 V; ID = 200 mA; pulsed; - 400 - mS
transconductance tp 300 s; 0.01 ; Tj = 25 C
Dynamic characteristics
QG(tot) total gate charge ID = 300 mA; VDS = 30 V; VGS = 4.5 V; - 0.6 0.8 nC
QGS gate-source charge Tj = 25 C - 0.2 - nC
QGD gate-drain charge - 0.2 - nC
Ciss input capacitance VGS = 0 V; VDS = 10 V; f = 1 MHz; - 30 50 pF
Coss output capacitance Tj = 25 C - 7 - pF
Crss reverse transfer - 4 - pF
capacitance
td(on) turn-on delay time VDS = 50 V; RL = 250 ; VGS = 10 V; - 3 6 ns
tr rise time RG(ext) = 6 ; Tj = 25 C - 4 - ns
td(off) turn-off delay time - 10 20 ns
tf fall time - 5 - ns
Source-drain diode
VSD source-drain voltage IS = 115 mA; VGS = 0 V; Tj = 25 C 0.47 0.75 1.1 V
2N7002P All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.
017aaa017 017aaa018
0.7 103
ID VGS = 4.0 V
(A) 3.5 V
0.6 ID
(A)
0.5
104
3.25 V
(1) (2) (3)
0.4
0.3 3.0 V
105
0.2
2.75 V
0.1
2.5 V
0.0 106
0.0 1.0 2.0 3.0 4.0 0 1 2 3
VDS (V) VGS (V)
017aaa019 017aaa020
10.0 6.0
RDSon
() RDSon
(1)
()
7.5
(2)
4.0
5.0
(1)
2.0
2.5
(2)
(3)
(4)
(5)
0.0 0.0
0.0 0.2 0.4 0.6 0.8 1.0 0.0 2.0 4.0 6.0 8.0 10.0
ID (A) VGS (V)
Tamb = 25 C ID = 500 mA
(1) VGS = 3.25 V (1) Tamb = 150 C
(2) VGS = 3.5 V (2) Tamb = 25 C
(3) VGS = 4 V
(4) VGS = 5 V
(5) VGS = 10 V
Fig 8. Drain-source on-state resistance as a function Fig 9. Drain-source on-state resistance as a function
of drain current; typical values of gate-source voltage; typical values
2N7002P All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.
017aaa021 017aaa022
1.0 2.4
ID
a
(A)
0.8
(1) (2) 1.8
0.6
1.2
0.4
0.6
0.2
(2) (1)
0.0 0.0
0.0 1.0 2.0 3.0 4.0 5.0 60 0 60 120 180
VGS (V) Tamb (C)
017aaa023 017aaa024
3.0 102
VGS(th)
(V) (1) (1)
C
(pF)
2.0
(2) (2)
10
(3)
(3)
1.0
0.0 1
60 0 60 120 180 101 1 10 102
Tamb (C) VDS (V)
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017aaa025
5.0
VDS
VGS
(V)
4.0 ID
VGS(pl)
3.0
VGS(th)
2.0 VGS
QGS1 QGS2
QGS QGD
1.0
QG(tot)
003aaa508
0.0
0.0 0.2 0.4 0.6 0.8
QG (nC)
017aaa026
1.2
IS
(A)
0.8
(1) (2)
0.4
0.0
0.0 0.4 0.8 1.2
VSD (V)
VGS = 0 V
(1) Tamb = 150 C
(2) Tamb = 25 C
Fig 16. Source current as a function of source-drain voltage; typical values
2N7002P All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.
8. Test information
P t1
duty cycle =
t2 t2
t1
t
006aaa812
2N7002P All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.
9. Package outline
D B E A X
HE v M A
A1
1 2 c
e1 bp w M B Lp
e
detail X
0 1 2 mm
scale
04-11-04
SOT23 TO-236AB
06-03-16
2N7002P All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.
10. Soldering
3.3
2.9
1.9
solder lands
solder resist
3 1.7 2
solder paste
0.5
(3)
0.6
(3)
1 sot023_fr
2.2
1.2
(2)
1.4
(2)
solder lands
occupied area
Dimensions in mm
1.4
2.8
4.5 sot023_fw
2N7002P All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.
2N7002P All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved.
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status information is available on the Internet at URL http://www.nxp.com.
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In no event shall NXP Semiconductors be liable for any indirect, incidental, the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . .4
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . .9
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
12.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
13 Contact information. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
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