IKY75N120CH3

HighspeedswitchingseriesthirdgenerationIGBT

LowswitchinglossesIGBTinHighspeed3technologycopackedwithsoft,fast
recoveryfullcurrentratedanti-parallelEmitterControlleddiode

Features:

HighspeedH3technologyoffers:
Ultra-lowlossswitchinglossesthankstoKelvinemitterpin
packageincombinationwithHighspeedH3technology
Highefficiencyinhardswitchingandresonanttopologies
10secshortcircuitwithstandtimeatTvj=175C
Easyparallelingcapabilityduetopositivetemperature
coefficientinVCE(sat)
LowEMI
LowGateChargeQG
Verysoft,fastrecoveryfullcurrentanti-paralleldiode
Maximumjunctiontemperature175C
Pb-freeleadplating;RoHScompliant
CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/

Applications:

IndustrialUPS
Charger
EnergyStorage
Three-levelSolarStringInverter

ProductValidation:

Qualifiedforindustrialapplicationsaccordingtotherelevanttests
ofJEDEC47/20/22

KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25C Tvjmax Marking Package
IKY75N120CH3 1200V 75A 2V 175C K75MCH3 PG-TO247-4-2

Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.2

www.infineon.com 2017-06-09
IKY75N120CH3

HighspeedswitchingseriesthirdgenerationIGBT

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Datasheet 2 V2.2
2017-06-09
IKY75N120CH3

HighspeedswitchingseriesthirdgenerationIGBT

MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter Symbol Value Unit

Collector-emittervoltage,Tvj25C VCE 1200 V
DCcollectorcurrent,limitedbyTvjmax
TC=25C IC 150.0 A
TC=134C 75.0
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 300.0 A
Turn off safe operating area
- 300.0 A
VCE1200V,Tvj175C,tp=1s
Diodeforwardcurrent,limitedbyTvjmax
TC=25C IF 150.0 A
TC=100C 75.0
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 300.0 A
Gate-emitter voltage 20
VGE V
TransientGate-emittervoltage(tp10s,D<0.010) 30
Short circuit withstand time
VGE=15.0V,VCC600V
Allowed number of short circuits < 1000 tSC s
Time between short circuits: 1.0s
Tvj=175C 10
PowerdissipationTC=25C 938.0
Ptot W
PowerdissipationTC=134C 256.0
Operating junction temperature Tvj -40...+175 C
Storage temperature Tstg -55...+150 C
Soldering temperature,
C
wave soldering 1.6mm (0.063in.) from case for 10s 260

ThermalResistance
Value
Parameter Symbol Conditions Unit
min. typ. max.
RthCharacteristics
IGBT thermal resistance,1)
Rth(j-C) - - 0.16 K/W
junction - case
Diode thermal resistance,1)
Rth(j-C) - - 0.28 K/W
junction - case
Thermal resistance
Rth(j-a) - - 40 K/W
junction - ambient

1)
Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included.
Datasheet 3 V2.2
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IKY75N120CH3

HighspeedswitchingseriesthirdgenerationIGBT

ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1200 - - V
VGE=15.0V,IC=75.0A
Collector-emitter saturation voltage VCEsat Tvj=25C - 2.00 2.35 V
Tvj=175C - 2.50 -
VGE=0V,IF=75.0A
Diode forward voltage VF Tvj=25C - 1.90 2.30 V
Tvj=175C - 1.85 -
Gate-emitter threshold voltage VGE(th) IC=1.88mA,VCE=VGE 5.1 5.8 6.5 V
VCE=1200V,VGE=0V
Zero gate voltage collector current ICES Tvj=25C - - 450 A
Tvj=175C - 5000 -
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=75.0A - 26.0 - S

ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 4856 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 505 - pF
Reverse transfer capacitance Cres - 290 -
VCC=960V,IC=75.0A,
Gate charge QG - 370.0 - nC
VGE=15V
Internal emitter inductance
measured 5mm (0.197 in.) from LE - 13.0 - nH
case

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=25C
Turn-on delay time td(on) Tvj=25C, - 38 - ns
Rise time tr VCC=600V,IC=75.0A, - 32 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=6.0,RG(off)=6.0, - 303 - ns
Fall time tf L=70nH,C=67pF - 32 - ns
L,CfromFig.E
Turn-on energy Eon Energy losses include tail and - 3.40 - mJ
Turn-off energy Eoff diode reverse recovery. - 2.90 - mJ
Total switching energy Ets - 6.30 - mJ

Datasheet 4 V2.2
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IKY75N120CH3

HighspeedswitchingseriesthirdgenerationIGBT

DiodeCharacteristic,atTvj=25C
Diode reverse recovery time trr Tvj=25C, - 292 - ns
Diode reverse recovery charge Qrr VR=600V, - 4.90 - C
IF=75.0A,
Diode peak reverse recovery current Irrm diF/dt=1200A/s - 41.0 - A
Diode peak rate of fall of reverse
dirr/dt - -585 - A/s
recoverycurrentduringtb

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=175C
Turn-on delay time td(on) Tvj=175C, - 38 - ns
Rise time tr VCC=600V,IC=75.0A, - 35 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=6.0,RG(off)=6.0, - 400 - ns
Fall time tf L=70nH,C=67pF - 68 - ns
L,CfromFig.E
Turn-on energy Eon Energy losses include tail and - 6.10 - mJ
Turn-off energy Eoff diode reverse recovery. - 6.00 - mJ
Total switching energy Ets - 12.10 - mJ

DiodeCharacteristic,atTvj=175C
Diode reverse recovery time trr Tvj=175C, - 538 - ns
Diode reverse recovery charge Qrr VR=600V, - 13.80 - C
IF=75.0A,
Diode peak reverse recovery current Irrm diF/dt=1200A/s - 60.0 - A
Diode peak rate of fall of reverse
dirr/dt - -360 - A/s
recoverycurrentduringtb

Datasheet 5 V2.2
2017-06-09
IKY75N120CH3

HighspeedswitchingseriesthirdgenerationIGBT

1000

900

100
800
not for linear use
IC,COLLECTORCURRENT[A]

Ptot,POWERDISSIPATION[W]
700

600
10
500

400

300
1

200

100

0.1 0
1 10 100 1000 25 50 75 100 125 150 175
VCE,COLLECTOR-EMITTERVOLTAGE[V] TC,CASETEMPERATURE[C]
Figure 1. Forwardbiassafeoperatingarea Figure 2. Powerdissipationasafunctionofcase
(D=0,TC=25C,Tvj175C;VGE=15V) temperature
(Tvj175C)

160 300
VGE=20V

17V
140
250 15V

120 13V
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]

11V
200
100 9V

7V
80 150
5V

60
100

40

50
20

0 0
25 50 75 100 125 150 175 0 1 2 3 4 5 6
TC,CASETEMPERATURE[C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Collectorcurrentasafunctionofcase Figure 4. Typicaloutputcharacteristic
temperature (Tvj=25C)
(VGE15V,Tvj175C)

Datasheet 6 V2.2
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IKY75N120CH3

HighspeedswitchingseriesthirdgenerationIGBT

300 300
VGE=20V Tvj = 25C
Tvj = 175C
17V
250 15V 250

13V
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
11V
200 200
9V

7V
150 150
5V

100 100

50 50

0 0
0 1 2 3 4 5 6 2 4 6 8 10 12 14 16 18
VCE,COLLECTOR-EMITTERVOLTAGE[V] VGE,GATE-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic Figure 6. Typicaltransfercharacteristic
(Tvj=175C) (VCE=20V)

4.5 1000
IC = 38A
IC = 75A
4.0 IC = 150A
VCEsat,COLLECTOR-EMITTERSATURATION[V]

td(off)
tf
3.5 td(on)
tr
t,SWITCHINGTIMES[ns]

100
3.0

2.5

2.0
10

1.5

1.0

0.5 1
25 50 75 100 125 150 175 0 30 60 90 120 150
Tvj,JUNCTIONTEMPERATURE[C] IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature collectorcurrent
(VGE=15V) (inductiveload,Tvj=175C,VCE=600V,
VGE=0/15V,RG=6,Dynamictestcircuitin
Figure E)
Datasheet 7 V2.2
2017-06-09
IKY75N120CH3

HighspeedswitchingseriesthirdgenerationIGBT

td(off) td(off)
tf tf
td(on) td(on)
1000 tr 1000 tr
t,SWITCHINGTIMES[ns]

t,SWITCHINGTIMES[ns]
100 100

10 10
0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 175
RG,GATERESISTOR[] Tvj,JUNCTIONTEMPERATURE[C]
Figure 9. Typicalswitchingtimesasafunctionofgate Figure 10. Typicalswitchingtimesasafunctionof
resistor junctiontemperature
(inductiveload,Tvj=175C,VCE=600V, (inductiveload,VCE=600V,VGE=0/15V,
VGE=0/15V,IC=75A,Dynamictestcircuitin IC=75A,RG=6,Dynamictestcircuitin
Figure E) Figure E)

8 35
typ. Eoff
min. Eon
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]

max. Ets
7 30
E,SWITCHINGENERGYLOSSES[mJ]

6 25

5 20

4 15

3 10

2 5

1 0
25 50 75 100 125 150 175 0 30 60 90 120 150
Tvj,JUNCTIONTEMPERATURE[C] IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction Figure 12. Typicalswitchingenergylossesasa
ofjunctiontemperature functionofcollectorcurrent
(IC=1mA) (inductiveload,Tvj=175C,VCE=600V,
VGE=0/15V,RG=6,Dynamictestcircuitin
Figure E)
Datasheet 8 V2.2
2017-06-09
IKY75N120CH3

HighspeedswitchingseriesthirdgenerationIGBT

30 14
Eoff Eoff
Eon Eon
Ets Ets
12
25
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]
10
20

15

10
4

5
2

0 0
0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 175
RG,GATERESISTOR[] Tvj,JUNCTIONTEMPERATURE[C]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofgateresistor functionofjunctiontemperature
(inductiveload,Tvj=175C,VCE=600V, (inductiveload,VCE=600V,VGE=0/15V,
VGE=0/15V,IC=75A,Dynamictestcircuitin IC=75A,RG=6,Dynamictestcircuitin
Figure E) Figure E)

18 16
Eoff VCC=240V
Eon VCC=960V
16 Ets 14
E,SWITCHINGENERGYLOSSES[mJ]

14
VGE,GATE-EMITTERVOLTAGE[V]

12

12
10

10
8
8

6
6

4
4

2 2

0 0
400 450 500 550 600 650 700 750 800 0 50 100 150 200 250 300 350 400
VCE,COLLECTOR-EMITTERVOLTAGE[V] QGE,GATECHARGE[nC]
Figure 15. Typicalswitchingenergylossesasa Figure 16. Typicalgatecharge
functionofcollectoremittervoltage (IC=75A)
(inductiveload,Tvj=175C,VGE=0/15V,
IC=75A,RG=6,Dynamictestcircuitin
Figure E)
Datasheet 9 V2.2
2017-06-09
IKY75N120CH3

HighspeedswitchingseriesthirdgenerationIGBT

600
Cies
Coes

IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]
Cres
1E+4
500

400
C,CAPACITANCE[pF]

300

1000

200

100

100 0
0 5 10 15 20 25 30 10 11 12 13 14 15 16 17 18
VCE,COLLECTOR-EMITTERVOLTAGE[V] VGE,GATE-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof Figure 18. Typicalshortcircuitcollectorcurrentasa
collector-emittervoltage functionofgate-emittervoltage
(VGE=0V,f=1MHz) (VCE600V,Tvj175C)

45
D = 0.5
0.1 0.2
40
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]

0.1
tSC,SHORTCIRCUITWITHSTANDTIME[s]

0.05
35
0.02
0.01
30
single pulse
0.01
25

20

15
0.001

10

5
i: 1 2 3 4 5
ri[K/W]: 0.02275 0.047736 0.08788 2.0E-3 2.7E-4
i[s]: 3.8E-4 2.7E-3 0.019881 0.505051 12.95671

0 1E-4
10 12 14 16 18 20 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
VGE,GATE-EMITTERVOLTAGE[V] tp,PULSEWIDTH[s]
Figure 19. Shortcircuitwithstandtimeasafunctionof Figure 20. IGBTtransientthermalresistance
gate-emittervoltage (D=tp/T)
(VCE600V,startatTvj175C)

Datasheet 10 V2.2
2017-06-09
 IKY75N120CH3

HighspeedswitchingseriesthirdgenerationIGBT

1000
D = 0.5 Tvj = 25C, IF = 75A
0.2 Tvj = 175C, IF = 75A
900
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]

0.1 0.1
0.05 800

trr,REVERSERECOVERYTIME[ns]
0.02
0.01 700
single pulse
600
0.01

500

400

0.001 300

200

i: 1 2 3 4 5
100
ri[K/W]: 0.01104 0.10889 0.1573 2.8E-3 3.0E-4
i[s]: 3.6E-4 2.7E-3 0.01681 0.44863 12.11241

1E-4 0
1E-6 1E-5 1E-4 0.001 0.01 0.1 1 400 600 800 1000 1200 1400 1600
tp,PULSEWIDTH[s] diF/dt,DIODECURRENTSLOPE[A/s]
Figure 21. Diodetransientthermalimpedanceasa Figure 22. Typicalreverserecoverytimeasafunction
functionofpulsewidth ofdiodecurrentslope
(D=tp/T) (VR=600V)

18 90
Tvj = 25C, IF = 75A Tvj = 25C, IF = 75A
Tvj = 175C, IF = 75A Tvj = 175C, IF = 75A
16 80
Qrr,REVERSERECOVERYCHARGE[C]

Irr,REVERSERECOVERYCURRENT[A]

14 70

12 60

10 50

8 40

6 30

4 20

2 10

0 0
400 600 800 1000 1200 1400 1600 400 600 800 1000 1200 1400 1600
diF/dt,DIODECURRENTSLOPE[A/s] diF/dt,DIODECURRENTSLOPE[A/s]
Figure 23. Typicalreverserecoverychargeasa Figure 24. Typicalreverserecoverycurrentasa
functionofdiodecurrentslope functionofdiodecurrentslope
(VR=600V) (VR=600V)

Datasheet 11 V2.2
2017-06-09
IKY75N120CH3

HighspeedswitchingseriesthirdgenerationIGBT

0 300
Tvj = 25C, IF = 75A Tvj = 25C
Tvj = 175C, IF = 75A Tvj = 175C
-100

250
-200
dIrr/dt,diodepeakrateoffallofIrr[A/s]

IF,FORWARDCURRENT[A]
-300
200

-400

-500 150

-600

100
-700

-800
50

-900

-1000 0
400 600 800 1000 1200 1400 1600 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
diF/dt,DIODECURRENTSLOPE[A/s] VF,FORWARDVOLTAGE[V]
Figure 25. Typicaldiodepeakrateoffallofreverse Figure 26. Typicaldiodeforwardcurrentasafunction
recoverycurrentasafunctionofdiode offorwardvoltage
currentslope
(VR=600V)

3.5
IF = 38A
IF = 75A
IF = 150A
3.0
VF,FORWARDVOLTAGE[V]

2.5

2.0

1.5

1.0

0.5
25 50 75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[C]
Figure 27. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature

Datasheet 12 V2.2
2017-06-09
IKY75N120CH3

HighspeedswitchingseriesthirdgenerationIGBT

PG-TO247-4-2
M
A

D3
E E2
A2

D2
D1

D4
b2
b4
N
E3 b6 H
L1

2x
L

E1

1 2 3 4
b 4 3 2 1
e1 A1
e
b7
c

PACKAGE SURFACE ROUTE BETWEEN

PIN 1 & PIN 2 WILL BE 5.1mm MIN.

MILLIMETERS ALL b... AND c DIMENSIONS INCLUDING

DIMENSION PLATING EXCEPT AREA OF CUTTING
MIN. MAX.
A 4.9 5.1
A1 2.31 2.51
A2 1.9 2.1
b 1.16 1.29
b2 1.36 1.49
b4 2.16 2.29
b6 1.16 1.45
b7 1.16 1.65 DOCUMENT NO.
c 0.59 0.66 Z8B00182798
D 20.9 21.1 REVISION
D1 22.3 22.5 01
D2 15.95 16.55
D3 1 1.35 SCALE 2:1
D4 1.6 1.8
E 15.7 15.9 0 5 10mm
E1 3.9 4.1
E2 13.1 13.5
E3 2.58 2.78
EUROPEAN PROJECTION
e 2.54
e1 5.08
H 0.8 1
L 19.8 20.1
L1 2.55 2.85
M 0.97 1.57 ISSUE DATE
N 3.24 3.44 23.09.2016
R 1.9 2.1

Datasheet 13 V2.2
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IKY75N120CH3

HighspeedswitchingseriesthirdgenerationIGBT

Testing Conditions

VGE(t)
I,V
90% VGE
t rr = t a + t b
dIF/dt
Q rr = Q a + Q b

a b
10% VGE
t

IC(t) Qa Qb

dI

90% IC
90% IC

10% IC 10% IC
t
Figure C. Definition of diode switching
characteristics
VCE(t)

td(off) tf td(on) tr
t

Figure A.
VGE(t)
90% VGE
Figure D.

10% VGE
t

IC(t)

CC

2% IC
t

VCE(t) Figure E. Dynamic test circuit

Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
t2 t4
(only for ZVT switching)
E = VCE x IC x dt E = VCE x IC x d t
off on
t1 t3 2% VCE
t
t1 t2 t3 t4

Figure B.

Datasheet 14 V2.2
2017-06-09
IKY75N120CH3

HighspeedswitchingseriesthirdgenerationIGBT

RevisionHistory
IKY75N120CH3

Revision:2017-06-09,Rev.2.2
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2017-04-26 Final data sheet
2.2 2017-06-09 Update Figure 6

Datasheet 15 V2.2
2017-06-09
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HEXFET,HITFET,HybridPACK,iMOTION,IRAM,ISOFACE,IsoPACK,LEDrivIR,LITIX,MIPAQ,
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Publishedby
InfineonTechnologiesAG
81726Mnchen,Germany
InfineonTechnologiesAG2017.
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