Homework 5

1. Problem: A silicon p-n junction is formed between n-type Si doped with ND = 1017 cm3 and p-type Si
doped with NA = 1016 cm3 .
(a) Sketch the energy band diagram. Label all axes and all important energy levels.
(b) Find nn0 , np0 , pp0 , and pn0 . Sketch the carrier concentration (of both electrons and holes) as a function
of position.
(c) Calculate the built-in potential Vbi in eV.
Solution:
(a) The energy band diagram with labeled important energy levels and axes is

(b) Given ni = 1.5 1010 cm3 ,

in the quasi-neutral p-region,

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 16 3
pp0 = NA = 10 cm . (1)
In the quasi-neutral n-region,

17 3
nn0 = ND = 10 cm . (2)
In the depletion region,

n2i 4 3
np0 = = 2.25 10 cm (3)
NA
for p-side and
n2i 3 3
pn0 = = 2.25 10 cm (4)
ND
for n-side.
The diagram for carrier concentration is:

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(c) Using Eq. (123) or (124) on lecture notes Part 2, the build-in potential is

kB T NA ND kB T pp
Vbi = ln( ) = ln( ) = 0.7543eV. (5)
q n2i q pn

2. Problem: A Si p-n junction has dopant concentrations ND = 2 1015 cm3 and NA = 2 1016 cm3 .
Calculate the built-in potential Vbi in eV and the total width of the depletion region W = xn0 + xp0 at zero
bias (that is, Va = 0) and under a reverse bias Va = 8V.
Solution: (a) Given ni = 1.5 1010 cm3 , the build-in potential is:

kB T NA ND kB T pp
Vbi = ln( ) = ln( ) = 0.6709eV. (6)
q n2i q pn

(b) According to Eq. (140) & (141) in lecture notes Part 2, the depletion width with a bias Va is give by:
s
2s (Vbi Va ) 1 1
W = ( + ). (7)
q NA ND

For Va = 0V , we have W = 0.691m and for Va = 8V , we have W = 2.475m.

3. Problem: A Si p-n junction is reverse-biased with Va = 10V . Determine the percent change in junction
(depletion) capacitance and built-in potential if the doping in the p region is increased by a factor of 2.
Solution: Let us assume the NA and ND values from the Prob. 2, then the build-in potential is calculated by
Eq. 6 and we have:
kB T NA ND
Vbi = ln( ) = 0.6709eV, (8)
q n2i
and
0 kB T 2NA ND
Vbi = ln( ) = 0.6888eV. (9)
q n2i

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 Therefore, Vbi is increased by 2.67%.
From Eq. (184) on lecture note Part 2, the depletion capacitance can be calculated by

A
Cj = , (10)
W
where A is the cross-sectional area of the junction and W is the depletion width calculated by:
s
2s (Vbi Va ) 1 1
W = ( + ) = 2.7549m, (11)
q NA ND
s
0 V )
2s (Vbi
0 a 1 1
W = ( + ) = 2.6938m. (12)
q 2NA ND
Therefore, the percent change in junction depletion capacitance is given by:

Cj0 Cj W W0
= = 2.27%. (13)
Cj W0

4. Problem: Consider a p+ -n Si junction at T = 300 K with NA = 1018 cm3 and ND = 1016 cm3 . The
minority carrier hole diffusion constant is Dp = 12 cm2 /s and the minority carrier hole lifetime is p = 100 ns.
The cross-sectional area of the junction is A = 104 cm2 . Calculate the reverse saturation current Is = AJs .
Calculate also the current at a forward bias Va = 0.5 V.
Solution: Since NA ND , it is an asymmetric junction and the total current is dominated by the most
heavily-doped side of the junction. According to Eq. (151) in lecture notes Part 2, the saturation current density
is given by
qDp pn0
Js = (14)
Lp

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 1/2 3 n2
where Lp = (Dp p ) = 1.095 10 cm and pn0 = N i = 2.25 104 cm3 . So
D
11 2
Js = 3.9492 10 A/cm (15)
15
Is = AJs = 3.9492 10 A. (16)

For a forward bias Va = 0.5 V, the current is:

qVa /kB T
I = Is [e 1] = 8.93A. (17)

5. Which are the most important breakdown mechanisms in a reverse-biased p-n junction? Describe succintly
(no more than one paragraph for each process) how they work and how they trigger the breakdown process.
Solution: The important breakdown mechanisms are Zener and Avalanche. Refer to pages 108-117 in lecture
notes Part 2.
6. Problem: (a) Calculate the maximum width of the depletion layer wmax (at the onset of inversion) and the
maximum depletion charge |Qd,max | in p-type Si, GaAs, and Ge semiconductors of an MOS structure with
NA = 1016 cm3 and at T = 300 K.
(b) Repeat the calculations for T = 77 K.
Solution: v
u
u 4r 0 k T ln NA
t B ni
Wmax = (18)
q 2 NA
and
Qd = qNA Wmax . (19)
(a) At T = 300K,
For Si,
10 3
ni = 1.5 10 cm (20)
r = 11.7. (21)

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From the above equations we find out Wmax and Qd,max

Wmax = 0.2998m (22)

8 C
Qd,max = 4.797 10 . (23)
cm2
For Ge,
13 3
ni = 2.5 10 cm (24)
r = 16. (25)

From the above equations we find out Wmax and Qd,max

Wmax = 0.234m (26)

8 C
Qd,max = 3.744 10 . (27)
cm2
For GaAs
6 3
ni = 2 10 cm (28)
r = 13.2. (29)

From the above equations we find out Wmax and Qd,max

Wmax = 0.4109m (30)

8 C
Qd,max = 6.574 10 . (31)
cm2

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(b) At T = 77 K, note that
3/2 Eg /2kB T
ni (T ) T e . (32)
For Si,
18 3
ni = 2.176 10 cm (33)
r = 11.7. (34)

From the above equations we find out Wmax and Qd,max

Wmax = 0.3652m (35)

8 C
Qd,max = 5.843 10 . (36)
cm2
For Ge,
4 3
ni = 1.7529 10 cm (37)
r = 16. (38)

From the above equations we find out Wmax and Qd,max

Wmax = 0.3271m (39)

8 C
Qd,max = 5.234 10 . (40)
cm2
For GaAs,
30 3
ni = 4.934 10 cm (41)
r = 13.2. (42)

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 From the above equations we find out Wmax and Qd,max

Wmax = 0.45m (43)

8 C
Qd,max = 7.2 10 . (44)
cm2
7. Problem:Determine the metal-semiconductor work function difference M S (in eV) in an MOS structure with
p-type Si for the case where the gate is Al (qM = 3.2 eV), n+ polysilicon (polycrystalline Si, assume it is
identical to 0 normal0 Si), and p+ polysilicon. Assume NA = 6 1015 cm3 and T = 300 K.
Solution:Given,
15 3
NA = 6 10 cm (45)
T = 300K (46)
Eg
S = qS + + F (47)
2
Eg NA
S = qS + + kB T ln (48)
2 ni
where qS = 4.05eV and Eg = 1.11eV.
For Al,

M = qM = 3.2eV (49)
M S = M S = 1.73eV. (50)

For n+ polysilicon gate,

M = qS = 4.05eV (51)
M S = M S = 0.889eV. (52)

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For p+ polysilicon gate,

M = qM = 5.16eV (53)
M S = M S = 0.221eV. (54)

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