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NPN High-Voltage Transistors BF458 BF459: Quality Semi-Conductors

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20 STERN AVE.

TELEPHONE: (973) 376-2922


SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005
U.S.A. FAX: (973) 376-8960

NPN high-voltage transistors BF458; BF459

FEATURES
• Low current (max. 100 mA)
• High voltage (max. 300 V).

APPLICATIONS
• Intended for video output stages in black-and-white and
in colour television receivers.

DESCRIPTION
NPN transistors in a TO-126; SOT32 plastic package.
Top view
PINNING

PIN DESCRIPTION
1 emitter
Fig.1 Simplified outline (TO-126; SOT32)
2 collector, connected to mounting base
and symbol.
3 base

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BF458 _ 250 V
BF459 300 V
VCEO collector-emitter voltage open base
BF458 - 250 V
BF459 300 V
VEBO emitter-base voltage open collector - 5 V
Ic collector current (DC) - 100 mA
'CM peak collector current - 300 mA
IBM peak base current - 100 mA
Plot total power dissipation T mb s90°C - 6 W
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °C
Tamb operating ambient temperature -65 +150 °C

Quality Semi-Conductors
20 STERN AVE. TELEPHONE: (973) 376-2922
SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005
U.S.A. FAX: (973) 376-8960

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT


Rth j-a thermal resistance from junction to ambient 104 K/W
Rth j-mb thermal resistance from junction to mounting base 10 K/W

CHARACTERISTICS
Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT


ICBO collector cut-off current
BF458 IE = 0; VCB = 200 V 50 nA
lE a O;V C B = 200V;Tj=150°C - - 5 MA
ICBO collector cut-off current
BF459 IE ~ 0; VCB = 250 V 50 nA
|E = 0;VCB = 250V;T j = 1500C - - 5 HA
'eso emitter cut-off current Ic = 0; VEB = 5 V - - 100 nA
HFE DC current gain lc = 30mA; VCE = 10V 26 - -
VcEsat collector-emitter saturation Ic = 30 mA; IB = 6 mA - - 1 V
voltage
Cc collector capacitance lE = ie = 0;VCB = 30V;f=1MHz - - 4.5 PF
Cre feedback capacitance |c = ic = 0; VCE = 30 V; f = 1 MHz - - 3.5 PF
ft transition frequency lc = 15 mA; VCE = 10 V; f = 100 MHz - 90 - MHz

Quality Semi-Conductors
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20 STERN AVE. TELEPHONE: (973) 376-2922


SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005
U.SA FAX: (973) 376-8960

PACKAGE OUTLINE

Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32

0 2.5 5 mm
i i
scale

DIMENSIONS (mm are the original dimensions)

UNIT A c D E e L LI<'> Q P w
•1 max P1
"P
2.7 0.88 0.60 11.1 7.8 16.5 1.5 3.2 3.9
mm 4.58 2.29 2.54 0.254
2.3 0.65 0.45 10.5 7.2 15.3 0.9 3.0 3.6

Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal Irregularities.

OUTLINE REFERENCES EUROPEAN


VERSION IEC JEDEC EIAJ PROJECTION

SOT32 TO-126 S3^

Quality Semi-Conductors

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