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    CN4223R Lecture - Cleaning Technology 2018

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    John
    The document discusses cleaning technology prior to thin film deposition in microelectronics. It describes the importance of having a clean wafer surface to avoid contamination that could impact device performance and yield. The main types of contamination are particles, metals, and organics. Wet chemical cleaning is the most common method and involves immersion, sprays, or single wafer spin etching using chemicals like SC-1, SC-2, or HF to remove specific contaminants. A conventional cleaning sequence uses SPM, DI water rinses, dilute HF, SC-1, SC-2, and another HF treatment for a clean silicon surface prior to deposition. Other methods include dry physical cleaning or megasonic cleaning.

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    CN4223R Lecture - Cleaning Technology 2018

    Uploaded by

    John
    249 views16 pages
    The document discusses cleaning technology prior to thin film deposition in microelectronics. It describes the importance of having a clean wafer surface to avoid contamination that could impact device performance and yield. The main types of contamination are particles, metals, and organics. Wet chemical cleaning is the most common method and involves immersion, sprays, or single wafer spin etching using chemicals like SC-1, SC-2, or HF to remove specific contaminants. A conventional cleaning sequence uses SPM, DI water rinses, dilute HF, SC-1, SC-2, and another HF treatment for a clean silicon surface prior to deposition. Other methods include dry physical cleaning or megasonic cleaning.

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    CN4223R

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    The document discusses cleaning technology prior to thin film deposition in microelectronics. It describes the importance of having a clean wafer surface to avoid contamination that could impact device performance and yield. The main types of contamination are particles, metals, and organics. Wet chemical cleaning is the most common method and involves immersion, sprays, or single wafer spin etching using chemicals like SC-1, SC-2, or HF to remove specific contaminants. A conventional cleaning sequence uses SPM, DI water rinses, dilute HF, SC-1, SC-2, and another HF treatment for a clean silicon surface prior to deposition. Other methods include dry physical cleaning or megasonic cleaning.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    249 views16 pages

    CN4223R Lecture - Cleaning Technology 2018

    Uploaded by

    John
    The document discusses cleaning technology prior to thin film deposition in microelectronics. It describes the importance of having a clean wafer surface to avoid contamination that could impact device performance and yield. The main types of contamination are particles, metals, and organics. Wet chemical cleaning is the most common method and involves immersion, sprays, or single wafer spin etching using chemicals like SC-1, SC-2, or HF to remove specific contaminants. A conventional cleaning sequence uses SPM, DI water rinses, dilute HF, SC-1, SC-2, and another HF treatment for a clean silicon surface prior to deposition. Other methods include dry physical cleaning or megasonic cleaning.

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    of 16

    CN4223R Microelectronics Thin Film

    FLEXIBILITY FOCUS FUTURE CLEANING


    TECHNOLOGY
    (SURFACE PREPARATION
    PRIOR TO THIN FILM DEPOSITION)
    your
    next-generation
    foundry
    Associate Professor (Adjunct) Simon Chooi

    Department of Chemical & Biomolecular Engineering


    National University of Singapore

    Text: ULSI Technology page 60-88, read selectively


    “Overview” In CN4223R

    Metal & Metal alloy films

    Physical Vapour Deposition Metal barrier films


    (Sputtering)
    Film Deposition in Vacuum
    Dielectric films
    (Vacuum Technology)
    Polycrystalline silicon films
    Chemical Vapour Deposition
    Metal films

    Cleaning Technology High k metallic films

    Spin-on-glass (SOG)
    Spin Coating
    Film Deposition under Spin-on dielectrics (SOD)
    Atmospheric Conditions

    Electrodeposition Copper

    CN4223R A/Prof Simon Chooi


    Why Cleaning Technology?
     Importance of a clean wafer surface before thin film deposition
    Device performance, reliability and product yield are critically affected by the presence of chemical contaminants and
    particles on the wafer surface

     Types of contamination
    Particles, metallics (metals), organic and native oxide

    CN4223R A/Prof Simon Chooi


    Wafer Cleaning

    • Requirements for wafer cleaning:


    (1) Effective removal of all types of contaminants from wafer surface without damaging or significantly
    altering the wafer surface
    (2) Minimal etching or damaging the underlying layer or substrate
    (3) Use of contamination free and volatile chemicals
    (4) Relatively safe, simple and economical for process application
    (5) Ecologically acceptable and free of toxic waste product

    • Three methods of cleaning: Wet Chemicals


    Dry Physical
    Vapour phase

    • Wet chemical cleaning technology:


    - Immersion (wet benches)
    - Centrifugal spraying (spray processors)
    - Single wafer spin etchers
    - Megasonic processing
    - Brush scrubbing
    Dry physical cleaning, using cryogenic aerosol stream
    of Frozen argon and nitrogen gas (FSI ANTARES)

    CN4223R A/Prof Simon Chooi


    Wet Cleaning: Immersion Systems (Wet Benches)

    FSI Magellan immersion wet bench

    CN4223R A/Prof Simon Chooi


    Wet Cleaning: Spray Processors

    Spraying chemical across the wafers creates a physical force that acts to remove contamination

    Semitool FSI Zeta/Mercury

    On-axis spray processor Off-axis spray processor

    CN4223R A/Prof Simon Chooi


    Wet Cleaning: Single Wafer Spin Etchers

    CN4223R A/Prof Simon Chooi


    Removal of Particles From Silicon Surface

     Particle adhesion due to several mechanisms:


    (1) Forces due to static charge
    (2) Van der Waals forces
    (3) Chemical bonding between particle and surface

     Particle removal mechanisms:


    (1) Dissolution
    (2) Oxidizing degradation followed by dissolution
    (3) Liftoff by slight etching of the wafer surface or substrate
    (4) Electric repulsion between particles and wafer surface

    CN4223R A/Prof Simon Chooi


    Removal of Particles From Silicon Surface
     Particle removal typically achieved using SC-1 (NH4OH, H2O2, water); ratio from 1:1:5 to 1:1:200 at 70C
    Mechanism comprises
    (i) oxidation of organics
    (ii) oxidation of Si under particle and simultaneous etching of the oxidised Si

    Complex reactions summarised to the following:


    Dissociation of hydrogen peroxide: H2O2  H+ + HO2-
    Oxidation of silicon: Si + 2HO2-  2 OH- + SiO2
    Dissolution of silicon oxide: SiO2 + OH-  HSiO3-

    NH4OH etches the silicon: Si + 6OH-  SiO32- + 3H2O

     Effect of SC-1 on surface roughness


    •

    • Ratio

    1:1:5 0.5:1:1

    • Temperature of bath
    • Cleaning duration
    CN4223R A/Prof Simon Chooi
    Removal of Particles: Megasonic Cleaning

    CN4223R A/Prof Simon Chooi


    Metal Contamination & Removal From Silicon Surface
     Source of metal contamination: chemical solution, ion implantation or etching process

     Two mechanisms of metal impurities onto silicon surface:


    (1) Direct binding by the charge exchange between a metallic
    ion and hydrogen atom from Si-H

    Not easy to remove

    (2) Entrapment into oxide layer during formation

    Removed by etching the oxide

    ▪ Removal using SC-2 (Standard Clean 2 or also known as HPM (Hydrochloric-Peroxide mixture):
    HCl, H2O2, water, typically ratio of 1:1:6

    CN4223R A/Prof Simon Chooi


    Organic Contamination and Removal
     Source of organic contamination: organic vapour in wafer fab ambient, storage containers, photoresist residue

     Organic contamination typically removed by:


    (1) Dry ashing (oxygen radicals)
    (2) Sulfuric peroxide mixture (SPM) – H2SO4 and H2O2 in the ratio between 3:1 to 10:1 and temperatures between
    110C and 140C
    (3) Ozone-injected deionized water

     Removal mechanism: Oxidation followed by dissolution

    CN4223R A/Prof Simon Chooi


    Native Oxide on Silicon Surface
     Nature of native oxide: oxidation of silicon to silicon oxide, usually about 10 to 20Å

    Native oxide growth in air

     Consequence of native oxide: Interference to thin film growth


    (eg metal silicide formation)

     Removal: Native oxide can be removed by hydrofluoric acid (HF):


    HF + SiO2  SiF4 + H2O or SiF6 + H2O + H2

    Complete oxide dissolution:


    original hydrophilic surface  hydrophobic surfae

    CN4223R A/Prof Simon Chooi


    HF-Last Process for Silicon Surface
     The contact angle of a droplet of deionozed water on the silicon surface is usually used to indicate the chemical
    condition of the surface

     Low contact angle (hydrophilic surface)


    (native oxide)

     High contact angle (hydrophobic surface)


    (no native oxide, HF-last)

    https://www.youtube.com/watch?v=MPu3C1RgUf4 HF-last: Hydrogen termination on silicon


    CN4223R A/Prof Simon Chooi
    Conventional Cleaning Sequence for Silicon Surface

    SPM: H2SO4/H2O2 (4:1) 120-150C, remove organics

    DI water rinse Room temperature, remove SPM

    Dilute HF or DHF (100:1 H2O:HF) Room temperature, remove native silicon oxide

    DI water rinse Room temperature, remove HF

    SC-1: NH4OH/H2O2/H2O (1:1:5) 70C, remove particles

    DI water rinse Room temperature, remove SC-1

    SC-2: HCl/H2O2/H2O (1:1:6) 80C, remove metals

    DI water rinse Room temperature, remove SC-2

    Dilute HF or DHF (100:1 H2O:HF) Room temperature, remove native silicon oxide
    HF-last cleaning

    DI water rinse Room temperature, remove HF


    CN4223R A/Prof Simon Chooi
    Other Chemicals For Wet Cleaning

    CN4223R A/Prof Simon Chooi

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