Pulse-Width Modulated Rectifiers: Fundamentals of Power Electronics Chapter 18: PWM Rectifiers
Pulse-Width Modulated Rectifiers: Fundamentals of Power Electronics Chapter 18: PWM Rectifiers
Pulse-Width Modulated Rectifiers: Fundamentals of Power Electronics Chapter 18: PWM Rectifiers
vac(t) iac(t)
i ac(t) =
Re +
V 2ac,rms iac(t)
Pav =
Re(vcontrol)
+
vac(t) Re(vcontrol)
Power apparently “consumed” by Re
is actually transferred to rectifier dc
output port. To control the amount –
of output power, it must be possible
to adjust the value of Re. vcontrol
i(t)
– –
power power
source sink
i-v characteristic
– –
d(t)
ig
Controller
vg
vac(t) ig(t)
VM
v(t) V
iac(t)
VM /Re
t M(t)
Mmin
vg(t)
VM
v(t) V
vac(t) = VM sin (ωt) M(d(t)) = =
vg(t) VM sin (ωt)
vg(t) = VM sin (ωt)
M min = V
VM
Fundamentals of Power Electronics 8 Chapter 18: PWM Rectifiers
Output-side current
– –
d(t)
ig
Controller
vg
Fundamentals of Power Electronics 9 Chapter 18: PWM Rectifiers
Choice of converter
v(t) V M(t)
M(d(t)) = =
vg(t) VM sin (ωt)
Mmin
Boost converter
ig(t) i(t)
iac(t) + +
L D1
– –
vg(t) ig(t) d(t)
Controller
v(t) V
M(d(t)) = =
vg(t) VM sin (ωt)
M(d(t)) = 1
1 – d(t)
vg(t)
d(t) = 1 – in CCM
V
A plot of input current ig(t) vs input voltage vg(t), for various duty cycles
d(t). In CCM, the boost converter equilibrium equation is
vg(t)
= 1 – d(t)
V
The input characteristic in DCM is found by solution of the averaged
DCM model (Fig. 11.12(b)):
p(t)
V – vg(t)
ig(t) Solve for input current:
+ vg(t) p(t)
i g(t) = +
2L V – vg(t)
+ 2L +
vg(t)
– d 2T s
p(t) –
V
d 2T s
– v 2g(t)
with p(t) =
Beware! This DCM Re(d) from 2L
Chapter 11 is not the same as the d 2T s
rectifier emulated resistance Re = vg/ig
Fundamentals of Power Electronics 15 Chapter 18: PWM Rectifiers
Static input characteristics
of the boost converter
1
d=1
d = 0.8
d = 0.6
d = 0.4
d = 0.2
d=0
CCM:
vg(t)
= 1 – d(t)
0.75 V
jg(t) = 2L i g(t)
DCM:
2L i (t) 1 – vg(t) = d 2(t) vg(t)
VT s
0.5 VTs g V V
t) /R e
= v g(
)
i g(t CCM when
0.25 CCM
2L i (t) > vg(t) 1–
vg(t)
DCM VTs g V V
0
0 0.25 0.5 0.75 1
vg(t)
m g(t) =
V
Fundamentals of Power Electronics 17 Chapter 18: PWM Rectifiers
Open-loop DCM approach
• Use of other converters (in CCM) that are capable of increasing the
voltage:
SEPIC, Cuk, buck-boost
Flyback, isolated versions of boost, SEPIC, Cuk, etc.
• Boundary or critical conduction mode: operation of boost or other
converter at the boundary between CCM and DCM
• Buck converter: distortion occurs but stresses are low
• Resonant converter such as parallel resonant converter or some
quasi-resonant converters
• Converters that combine the functions of rectification, energy
storage, and dc-dc conversion
– –
ig(t)
+
L
Boost example
vg(t) + v(t)
Low frequency –
(average) component
–
of input current is
controlled to follow
Gate
input voltage driver
+
–
Pulse width
modulator
Boost converter
• Current ig(t) i(t)
reference iac(t) + +
L D1
derived
from input vac(t) vg(t) Q1 C v(t) R
voltage
– –
waveform
vcontrol (t) vg(t) ig(t)
• Multiplier allows Rs
PWM
control of emulated Multiplier X va(t)
resistance value v (t)
+– err Gc(s)
vr (t)
• Compensation of = kx vg(t) vcontrol (t) Compensator
current loop Controller
• If loop is well – –
designed, then: vcontrol (t) vg(t) ig(t)
• Multiplier: v (t)
+– err Gc(s)
vr (t)
vr(t) = k x vg(t) vcontrol(t) = kx vg(t) vcontrol (t) Compensator
Controller
• Hence the emulated resistance is:
vr (t) which can be simplified to
vg(t) k xvcontrol (t)
Re = = Rs
i g(t) va(t) Re vcontrol(t) =
k xvcontrol(t)
Rs
Fundamentals of Power Electronics 27 Chapter 18: PWM Rectifiers
System model using LFR
Average current control
+ +
iac(t) 〈 p(t)〉Ts
– –
ig(t)
As discussed in Chapter
+
17, an output voltage
feedback loop adjusts the vg(t) + C v(t)
–
emulated resistance Re
such that the rectifier –
power equals the dc load
power: Gate
driver
+
–
V 2g,rms
Pav = = Pload vg(t) Pulse width
Re modulator
+
–
Pavvg(t)Rs Pulse width
vref 1(t) = vg(t)
modulator
V 2g,rms
va(t) Gc(s) Compensator
multiplier
x
Peak xy vref1(t) –
detector V z kv +
z2
M y
vcontrol(t) –
Gcv(s)
+
vref2(t)
Voltage reference
+
–
k vvcontrol(t) vg(t) Pulse width
Pav = modulator
2Rs
va(t) Gc(s) Compensator
multiplier
x
Peak xy vref1(t) –
detector V z kv +
z2
M y
vcontrol(t) –
Gcv(s)
+
vref2(t)
Voltage reference
〈i(t)〉T 〈i1(t)〉T + +
s s
– –
Averaged switch network
In Chapter 7, vg(t) Ts
= Vg + vg(t) Problem: variations in vg,
we perturbed d(t) = D + d(t) ⇒ d'(t) = D' – d(t)
i1 , and d are not small.
and linearized i(t) T = i 1(t) T = I + i(t) So we are faced with the
s s
using the design of a control
v(t) = v2(t) = V + v(t)
assumptions Ts Ts
system that exhibits
v1(t) = V1 + v1(t)
Ts significant nonlinear
i 2(t) Ts
= I 2 + i 2(t) time-varying behavior.
d i g(t) Ts
L = vg(t) – d'(t)V – d'(t)v(t)
dt Ts
substitute:
d i g(t) Ts
L = vg(t) – d'(t)V – d'(t)v(t)
dt Ts
d i g(t) Ts
L = vg(t) – d'(t)V – d'(t)v(t)
dt Ts
The nonlinear term is much smaller than the linear ac term. Hence, it
can be discarded to obtain
d i g(t) Ts
L = vg(t) – d'(t)V
dt Ts
L
Equivalent circuit:
i g(t)
Ts
vg(t) + + d'(t)V
i g(s) V Ts – –
=
d(s) sL
++
ia(t)
inductor current, 0 Ts
vcontrol(t) S Q
because of inductor
current ripple and +
R
Multiplier X –
artificial ramp. This leads ic(t) Comparator Latch
to significant input = kx vg(t) vcontrol(t)
current waveform Current-programmed controller
distortion.
Fundamentals of Power Electronics 37 Chapter 18: PWM Rectifiers
CPM boost converter: Static input characteristics
base
base
2L
ase
Re = 0.1R
.2R
0.8 Rbase = 2L
b
Mode boundary: CCM occurs when
0.33R
Ts
Re = 0
Rbase
ase
V
b
0.5R
Re =
TsV vg(t) vg(t)
Ts
0.6
i g(t) > 1–
e
bas
Re =
2L V V
jg(t) = i g(t)
Ts
R
R =
e
bas
e
TsV m a L vg(t) vg(t)
R
0.4
or,
=2
i c(t) > + 1– CCM
L V V V
e
R
e
bas
R
0.2
=4
vg(t) DCM
e
b as
It is desired that
R
i c(t) =
R
10
Re Re =
0
0.0 0.2 0.4 0.6 0.8 1.0
Minimum slope compensation: vg(t)
ma = V V
2L
Fundamentals of Power Electronics 38 Chapter 18: PWM Rectifiers
Input current waveforms
with current mode control
1.0 • Substantial
i g(t)
Peak i g ma = V
distortion can
2L occur
0.8 Rbase = 2L
Ts
• Can meet
ase
id
harmonic limits
b
uso
2R
0.6
if the range of
Sin
Re =
ase
Rb
operating points
0.33
• Difficult to meet
0.1R
0.2
harmonic limits
R =
e
in a universal
0.0 input supply
ωt
ωt
ton
– –
Rs Zero current
Multiplier X ig detector S Q
va(t)
+
– R
vr (t) Comparator Latch
= kx vg(t) vcontrol (t)
Controller
ig(t)
Solve for how the controller varies the switching frequency over the ac
line period:
T s = t off + t on T s = 4LP 1
V 2M vg(t)
1–
V
For sinusoidal line voltage variations, the switching frequency will
therefore vary as follows:
1 V 2M V
fs = = 1 – M sin (ωt)
T s 4LP V
Boost converter
L D1
ig(t) is(t)
+
is(t)
vg(t) + C v(t) R
–
:1
Q1
n
vc(t) S Q vi (t)
– vi (t) +
Nonlinear carrier
generator 0 Ts 0 dTs Ts
vcontrol (t) Clock
i.e., is Ts
vi(dT s) = for interval 0 < t < T s
nC i fs
Fundamentals of Power Electronics 47 Chapter 18: PWM Rectifiers
How to control the average switch current
v(t) Ts
Desired control, from previous slide: i s(t) = d(t) 1 – d(t)
Ts Re(vcontrol)
Generate carrier waveform as follows (replace d by t/Ts ):
vc(t) = vcontrol t 1 – t for 0 ≤ t ≤ T s
Ts Ts
vc(t + T s) = vc(t)
The controller switches the transistor off when the integrator voltage
equals the carrier waveform. This leads to:
vi(dT s) = vc(dT s) = vcontrol(t) d(t) 1 – d(t)
i s(t) Ts
= vcontrol(t) d(t) 1 – d(t)
nC i f s
v(t) Ts
v(t) Ts
Re(vcontrol) = d(t) 1 – d(t) =
i s(t) nC i fsvcontrol(t)
Ts
Removal of dc
component
vcontrol (t) vc(t)
+–
Clock
with vg(t)
vg(t) = VM sin (ωt) i g(t) =
Re
V 2M V 2M
so pac(t) = sin ωt =
2
1 – cos 2ωt
Re 2Re
d 1 Cv 2C(t)
d EC(t) 2
pC(t) = = = pac(t) – pload(t)
dt dt
pac(t)
Pload
vc(t)
d 1 Cv 2C(t)
2
= = pac(t) – pload(t)
dt
t
Fundamentals of Power Electronics 53 Chapter 18: PWM Rectifiers
Single-phase system with internal energy storage
iac(t) + 〈 pac(t)〉T + +
s i(t)
Dc–dc
vac(t) vg(t) Re C vC(t) converter v(t) load
– – –
Energy storage
capacitor
+ +
i(t)
– –
iac(t) + 〈 pac(t)〉Ts + +
i(t)
– – –
iac(t) + 〈 pac(t)〉Ts + +
i(t)
– – –
If the load power exceeds the average rectifier power, then there is a
net discharge in capacitor energy and voltage over one ac line cycle.
There is a net increase in capacitor charge when the reverse is true.
This suggests that rectifier and load powers can be balanced by
regulating the energy storage capacitor voltage.
Boost converter
ig(t) i2(t)
iac(t) + + +
L D1 i(t)
DC–DC
vac(t) vg(t) Q1 vC(t) C Converter Load v(t)
– – –
vcontrol(t) vg(t) ig(t)
d(t)
PWM
Rs
Multiplier X v(t)
va(t)
v (t)
+– err Gc(s) Compensator –+ vref3
vref1(t) and modulator
= kxvg(t)vcontrol(t) Compensator
Wide-bandwidth input current controller Wide-bandwidth output voltage controller
vC(t)
Compensator –+ vref2
vac(t)
So bandwidth of
capacitor voltage
loop must be
iac(t) limited, and THD
increases rapidly
with increasing
bandwidth
t
〈 ig(t)〉Ts
Ideal rectifier (LFR) 〈 i2(t)〉T
s
〈 p(t)〉T +
s
–
ac dc
input output
vcontrol
–
ac dc
Then the input output
instantaneous power vcontrol
is:
2
vg(t) Ts v 2g,rms
p(t) T = = 1 – cos 2ωt
s Re(vcontrol(t)) Re(vcontrol(t))
〈 i2(t)〉T
s
V 2g,rms V 2g,rms
– cos 2 2ωt C 〈 v(t)〉Ts Load
Re Re
v(t)
〈 v(t)〉Ts
〈 v(t)〉T
2L
T2L = 1 2π = π
2 ω ω
〈 i2(t)〉T2L
+
V 2g,rms
C 〈 v(t)〉T2L Load
Re
p(t) T 2L v 2g,rms(t)
i 2(t) T 2L
= =
v(t) T 2L
Re(vcontrol(t)) v(t) T 2L
Let with
v(t) T 2L
= V + v(t) V >> v(t)
i 2(t) T 2L
= I 2 + i 2(t) I 2 >> i 2(t)
vg,rms = Vg,rms + vg,rms(t) Vg,rms >> vg,rms(t)
vcontrol(t) = Vcontrol + vcontrol(t)
Vcontrol >> vcontrol(t)
vcontrol(t)
I 2 + i 2(t) = g 2vg,rms(t) + j2v(t) – r2
where
df Vg,rms, v , Vcontrol)
T 2L
I2
– 1 = =–
r2 d v V
T 2L
v T =V
2L
i2
+
g 2 vg,rms j2 vcontrol r2 C v R
Line-to-output
v(s) 1
= g 2 R||r 2
vg,rms(s) 1 + sC R||r 2
Fundamentals of Power Electronics 73 Chapter 18: PWM Rectifiers
Model parameters
Table 18.1 Small-signal model parameters for several types of rectifier control schemes
Controller type g2 j2 r2
iac(t) + 〈 pac(t)〉Ts + +
i(t)
– – –
v(s) j
= 2
vcontrol(s) sC
v(s) g
= 2
vg,rms(s) sC
iQ(t)
I Qrms = 1 i 2Q(t)dt
Tac 0
I Qrms = 1 T
Tac s ∑
n=1
1
Ts (n-1)T s
i 2Q(t)dt
T ac/T s nT s
I Qrms = 1 T
Tac s ∑
n=1
1
Ts (n-1)T s
i 2Q(t)dt
T ac/T s nT s
I Qrms ≈ 1 lim T
Tac T s→0 s ∑
n=1
1
Ts (n-1)T s
i 2Q(τ)dτ
T ac t+T s
= 1 1 i 2Q(τ)dτ dt
Tac 0
Ts t
= i 2Q(t) Ts
T ac
For the boost converter, the transistor current iQ(t) is equal to the input
current when the transistor conducts, and is zero when the transistor
is off. The average over one switching period of iQ2(t) is therefore
t+T
s
i 2
= 1 i 2Q(t)dt
Q T
s Ts t
= d(t)i 2ac(t)
If the input voltage is
vac(t) = VM sin ωt
I Qrms = 1 i 2Q dt
Tac 0
Ts
T ac
1 V 2M VM
= 1 – sin ωt sin 2 ωt dt
Tac R 2e V
0
T ac/2
2
I Qrms = 2 V M
sin 2 ωt –
VM
sin 3 ωt dt
Tac R 2
e
V
0
π
n 1 sin n (θ)dθ
π 0
1 2
π
2 2⋅4⋅6 (n – 1) if n is odd
π π 1⋅3⋅5 n 2 1
1 n
sin (θ)dθ =
π 0 1⋅3⋅5 (n – 1) 2
if n is even
2⋅4⋅6 n 3 4
3π
4 3
8
5 16
15π
6 15
48
VM V V
I Qrms = 1– 8 M = I ac rms 1– 8 M
2 Re 3π V 3π V
When the dc output voltage is not too much greater than the peak ac
input voltage, the boost rectifier exhibits very low transistor current.
Efficiency of the boost rectifier is then quite high, and 95% is typical in
a 1kW application.
Tabl e 18. 3 Summary of rectifier current stresses for several converter topologies
I ac rms 2 π2 1 – π M
Transistor VM V I ac rms 2
I ac rms 1 – 8
3π V 8 V
Diode I dc 16 V I dc 2 I dc V
3π V M VM
Diode, I dc 3 + 16 nV I dc 2I dc 1 + nV
2 3π V M VM
xfmr secondary
C1
I ac rms 8 VM 0
I ac rms max 1,
VM
3π V V
L2 VM 3 I ac rms V M VM
I ac rms I ac rms 2
V 2 2 V V
Diode I dc 3 + 16 V I dc 2I dc 1 + V
2 3π V M VM
C1,
I ac rms 8 VM 0
I ac rms 2 max 1,
xfmr primary 3π nV n
Diode, I dc 3 + 16 nV I dc 2I dc 1 + nV
xfmr secondary 2 3π V M VM
I ac rms
with, in all cases, = 2 V , ac input voltage = V M sin(ω t)
I dc VM
dc output voltage = V
Boost converter
• Lowest transistor rms current, highest efficiency
• Isolated topologies are possible, with higher transistor stress
• No limiting of inrush current
• Output voltage must be greater than peak input voltage
Buck-boost, SEPIC, and Cuk converters
• Higher transistor rms current, lower efficiency
• Isolated topologies are possible, without increased transistor
stress
• Inrush current limiting is possible
• Output voltage can be greater than or less than peak input
voltage
Fundamentals of Power Electronics 86 Chapter 18: PWM Rectifiers
Comparison of rectifier topologies
Converter Transistor rms Transistor Diode rms Transistor rms Diode rms
current voltage current current, 120V current, 120V
Boost 2A 380 V 3.6 A 6.6 A 5.1 A
Nonisolated 5.5 A 719 V 4.85 A 9.8 A 6.1 A
SEPIC
Isolated 5.5 A 719 V 36.4 A 11.4 A 42.5 A
SEPIC
Isolated SEPIC example has 4:1 turns ratio, with 42V 23.8A dc load
+
–
+ +
– –
– –
controller
RL d(t) Ron VF
ig(t) id(t) i(t) = I
d'(t) : 1
Averaged
+
–
+
model
vg(t) + C R v(t) = V
– (large)
vg(t) ig(t)
300 10 Typical waveforms
vg(t)
8
200
(low frequency components)
ig(t) 6
4
vg(t)
100 ig(t) =
Re
2
0 0
0° 30° 60° 90° 120° 150° 180°
d(t) 1 6
0.8 5 id(t)
4
0.6
3 i(t) = I
0.4
2
0.2 1
0 0
0° 30° 60° 90° 120° 150° 180° 0° 30° 60° 90° 120° 150° 180°
ωt
vg(t) + C R v(t) = V
– (large)
Averaged model
Inductor dynamics are neglected, a good approximation when the ac
line variations are slow compared to the converter natural frequencies
with VM Ron
a=
V Re
This integral is obtained not only in the boost rectifier, but also in the
buck-boost and other rectifier topologies. The solution is
π/2
π/2
Approximation via
1.15
polynomial:
1.1
F(a) ≈ 1 + 0.862a + 0.78a 2
1.05
For | a | ≤ 0.15, this
approximate expression is F(a) 1
within 0.1% of the exact
0.95
value. If the a2 term is
omitted, then the accuracy 0.9
drops to ±2% for | a | ≤ 0.15.
The accuracy of F(a) 0.85
–0.15 –0.10 –0.05 0.00 0.05 0.10 0.15
coincides with the accuracy
of the rectifier efficiency η. a
1
η Pout R
η= = 1 – on F(a)
.05
Pin Re
0.95 R on /R e = 0
Also, VM 120 2 V
= = 0.435
V 390 V 95% efficiency with
1 VM/V = 0.435 occurs
η with Ron/Re ≈ 0.075.
.05
0.95 R on /R e = 0 So we require a
MOSFET with on
= 0.1
0.9 R on/R e resistance of
0.15 Ron ≤ (0.075) Re
R on /R e =
0.85
= 0.2 = (0.075) (27.4 Ω) = 2 Ω
/R e
0.8 R on
0.75
0.0 0.2 0.4 0.6 0.8 1.0
VM /V