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Isc P-Channel MOSFET Transistor IRF5210, IIRF5210: INCHANGE Semiconductor

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Vehid Parić

This document provides information on the IRF5210 P-channel MOSFET transistor from INCHANGE Semiconductor. It has a maximum static drain-source on-resistance of 0.06 ohms, is an enhancement mode device, and is 100% avalanche tested. It combines fast switching speed with a ruggedized design to provide efficient and reliable performance in a wide variety of applications. Key maximum ratings and electrical characteristics are provided.

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Isc P-Channel MOSFET Transistor IRF5210, IIRF5210: INCHANGE Semiconductor

Uploaded by

Vehid Parić
472 views2 pages
This document provides information on the IRF5210 P-channel MOSFET transistor from INCHANGE Semiconductor. It has a maximum static drain-source on-resistance of 0.06 ohms, is an enhancement mode device, and is 100% avalanche tested. It combines fast switching speed with a ruggedized design to provide efficient and reliable performance in a wide variety of applications. Key maximum ratings and electrical characteristics are provided.

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This document provides information on the IRF5210 P-channel MOSFET transistor from INCHANGE Semiconductor. It has a maximum static drain-source on-resistance of 0.06 ohms, is an enhancement mode device, and is 100% avalanche tested. It combines fast switching speed with a ruggedized design to provide efficient and reliable performance in a wide variety of applications. Key maximum ratings and electrical characteristics are provided.

Copyright:

© All Rights Reserved
Download as PDF, TXT or read online from Scribd
Download as pdf or txt
472 views2 pages

Isc P-Channel MOSFET Transistor IRF5210, IIRF5210: INCHANGE Semiconductor

Uploaded by

Vehid Parić
This document provides information on the IRF5210 P-channel MOSFET transistor from INCHANGE Semiconductor. It has a maximum static drain-source on-resistance of 0.06 ohms, is an enhancement mode device, and is 100% avalanche tested. It combines fast switching speed with a ruggedized design to provide efficient and reliable performance in a wide variety of applications. Key maximum ratings and electrical characteristics are provided.

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INCHANGE Semiconductor

isc P-Channel MOSFET Transistor IRF5210,IIRF5210

·FEATURES
·Static drain-source on-resistance:
RDS(on)≤0.06Ω
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

·DESCRIPTION
·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely efficient and
reliable device for use in a wide variety of applications.

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage -100 V

VGS Gate-Source Voltage ±20 V

ID Drain Current-Continuous -40 A

IDM Drain Current-Single Pulsed -140 A

PD Total Dissipation @TC=25℃ 200 W

Tj Max. Operating Junction Temperature 175 ℃

Tstg Storage Temperature -55~175 ℃

·THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAX UNIT

Rth(j-c) Channel-to-case thermal resistance 0.75 ℃/W

Rth(j-a) Channel-to-ambient thermal resistance 62 ℃/W

isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor

isc P-Channel MOSFET Transistor IRF5210,IIRF5210

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= -250μA -100 V

VGS(th) Gate Threshold Voltage VDS=VGS; ID= -250μA -2.0 -4.0 V

RDS(on) Drain-Source On-Resistance VGS= -10V; ID= -24A 0.06 Ω

IGSS Gate-Source Leakage Current VGS= ±20V ±100 nA

IDSS Drain-Source Leakage Current VDS= -100V; VGS= 0V -25 μA

VSD Diode forward voltage Is= -21A; VGS = 0V -1.6 V

isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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