PD - 94434

AUTOMOTIVE MOSFET

IRF2204
Typical Applications HEXFET® Power MOSFET
● Electric Power Steering
● 14 Volts Automotive Electrical Systems D
VDSS = 40V
Features
● Advanced Process Technology
● Ultra Low On-Resistance RDS(on) = 3.6mΩ
G
● Dynamic dv/dt Rating
● 175°C Operating Temperature ID = 210A†
● Fast Switching S
● Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET
utilizes the lastest processing techniques to achieve extremely low on-resistance
per silicon area. Additional features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other applications.
TO-220AB

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 210†
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 150† A
IDM Pulsed Drain Current  850
PD @TC = 25°C Power Dissipation 330 W
Linear Derating Factor 2.2 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚ 460 mJ
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy‡ mJ
TJ Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.45
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62

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IRF2204
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.041 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 3.0 3.6 mΩ VGS = 10V, ID = 130A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA
gfs Forward Transconductance 120 ––– ––– S VDS = 10V, ID = 130A
––– ––– 20 VDS = 40V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V
Qg Total Gate Charge ––– 130 200 ID = 130A
Qgs Gate-to-Source Charge ––– 35 52 nC VDS = 32V
Qgd Gate-to-Drain ("Miller") Charge ––– 39 59 VGS = 10V„
td(on) Turn-On Delay Time ––– 15 ––– VDD = 20V
tr Rise Time ––– 140 ––– ID = 130A
ns
td(off) Turn-Off Delay Time ––– 62 ––– RG = 2.5Ω
tf Fall Time ––– 110 ––– VGS = 10V „
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact S

Ciss Input Capacitance ––– 5890 ––– VGS = 0V

Coss Output Capacitance ––– 1570 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz, See Fig. 5
Coss Output Capacitance ––– 8000 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 1370 ––– VGS = 0V, VDS = 32V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance … ––– 2380 ––– VGS = 0V, VDS = 0V to 32V

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 210†
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 850

(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 130A, VGS = 0V „
trr Reverse Recovery Time ––– 68 100 ns TJ = 25°C, IF = 130A
Qrr Reverse RecoveryCharge ––– 120 180 nC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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 IRF2204

10000 10000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
1000 5.0V 1000 5.0V
I D, Drain-to-Source Current (A)

I D, Drain-to-Source Current (A)

BOTTOM 4.5V BOTTOM 4.5V

100 100 4.5V

4.5V

10 10

20µs PULSE WIDTH 20µs PULSE WIDTH

T J= 25 ° C T J= 175 ° C
1 1
0.1 1 10 100 0.1 1 10 100
V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000.00 2.5
I D = 210A

T J = 175°C
ID , Drain-to-Source Current (Α )

2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)

1.5

100.00
T J = 25°C
1.0

0.5

VDS = 25V
20µs PULSE WIDTH V GS = 10V
10.00 0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
4.0 5.0 6.0 7.0 8.0 9.0 10.0
TJ , Junction Temperature ( ° C)
VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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IRF2204

100000 12
VGS = 0V, f = 1 MHZ I D = 130A
Ciss = Cgs + Cgd, Cds SHORTED VDS = 32V
VDS = 20V
Crss = Cgd 10

10000 Coss = Cds + Cgd

VGS , Gate-to-Source Voltage (V)

C, Capacitance(pF)

Ciss
8
Coss

1000 6

Crss
4

100

10 0
1 10 100 0 30 60 90 120 150
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)

TJ = 175 ° C
100 1000
I SD , Reverse Drain Current (A)

10 100 100µsec

1msec
T J= 25 ° C
1 10
Tc = 25°C 10msec
Tj = 175°C
Single Pulse
V GS = 0 V
0.1 1
0.0 0.5 1.0 1.5 2.0 2.5 1 10 100
V SD,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRF2204

250
RD
LIMITED BY PACKAGE VDS

VGS
200 D.U.T.
RG
+
-VDD
ID , Drain Current (A)

150
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
100

Fig 10a. Switching Time Test Circuit

50
VDS
90%

0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)

10%
VGS
Fig 9. Maximum Drain Current Vs.
td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

1
(Z thJC )

D = 0.50

0.1 0.20

0.10
Thermal Response

0.05

0.02 SINGLE PULSE

0.01 (THERMAL RESPONSE)
P DM

0.01
t1

t2

Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC +TC
0.001
0.00001 0.0001 0.001 0.01 0.1 1

t 1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF2204

900
15V ID
TOP 52A
750 91A
DRIVER BOTTOM 130A
VDS L

EAS , Single Pulse Avalanche Energy (mJ)

600

RG D.U.T +
V
- DD
IAS A 450
20V
tp 0.01Ω

300
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp 150

0
25 50 75 100 125 150 175

Starting Tj, Junction Temperature ( ° C)

I AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
QG

10 V
QGS QGD 4.0
VGS(th) Gate threshold Voltage (V)

VG 3.5

3.0
ID = 250µA
Charge
Fig 13a. Basic Gate Charge Waveform 2.5
Current Regulator
Same Type as D.U.T.
2.0

50KΩ

12V .2µF
.3µF
1.5
+
V
D.U.T. - DS
1.0
VGS
-75 -50 -25 0 25 50 75 100 125 150 175 200

3mA T J , Temperature ( °C )

IG ID
Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature
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 IRF2204

1000
Duty Cycle = Single Pulse

0.01
Allowed avalanche Current vs
Avalanche Current (A)

100 avalanche pulsewidth, tav

assuming ∆ Tj = 25°C due to
0.05 avalanche losses

0.10

10

1
1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

500 Notes on Repetitive Avalanche Curves , Figures 15, 16:

TOP Single Pulse (For further info, see AN-1005 at www.irf.com)
BOTTOM 10% Duty Cycle 1. Avalanche failures assumption:
ID = 210A Purely a thermal phenomenon and failure occurs at a
EAR , Avalanche Energy (mJ)

400
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
300
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
200 4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
100
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
0
t av = Average time in avalanche.
25 50 75 100 125 150 175 D = Duty cycle in avalanche = t av ·f
Starting T J , Junction Temperature (°C) ZthJC(D, tav) = Transient thermal resistance, see figure 11)

PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC

Fig 16. Maximum Avalanche Energy Iav = 2DT/ [1.3·BV·Zth]
Vs. Temperature EAS (AR) = PD (ave)·tav
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IRF2204

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T* • Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D" V DD
-
• D.U.T. - Device Under Test
V GS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% [ISD]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 17. For N-channel HEXFET® power MOSFETs

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 IRF2204
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415) 3.78 (.149) -B-
2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)
2.62 (.103) 4.20 (.165)
-A- 1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045) LEAD ASSIGNMENTS
MIN 1 - GATE
1 2 3 2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530) 4.06 (.160)
3.55 (.140)

0.93 (.037) 0.55 (.022)

3X 3X
0.69 (.027) 0.46 (.018)
1.40 (.055)
3X
1.15 (.045) 0.36 (.014) M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information

EXAMPLE : THIS IS AN IRF1010
WITH ASSEMBLY A
LOT CODE 9B1M INTERNATIONAL PART NUMBER
RECTIFIER
IRF1010
LOGO 9246
9B 1M DATE CODE
ASSEMBLY
(YYWW)
LOT CODE
YY = YEAR
WW = WEEK

Notes:
 Repetitive rating; pulse width limited by … Coss eff. is a fixed capacitance that gives the same charging time
max. junction temperature. (See fig. 11).
as Coss while VDS is rising from 0 to 80% VDSS .
‚ Starting TJ = 25°C, L = 0.06mH
† Calculated continuous current based on maximum allowable
RG = 25Ω, IAS = 130A. (See Figure 12).
junction temperature. Package limitation current is 75A.
ƒ ISD ≤ 130A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C. ‡ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
„ Pulse width ≤ 400µs; duty cycle ≤ 2%. avalanche performance.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/02
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