Scribd
Upload
282 views10 pages

kvr1333d3n9 4g

This document specifies the features and specifications of a 4GB DDR3-1333 ECC memory module from Kingston Technology. It is composed of 18 256M x 8-bit SDRAM chips in a 240-pin DIMM package running at 1333Mbps with a latency of CL9. The module operates at 1.5V and meets JEDEC timing standards. It also lists the pinout diagram, functional block diagram, operating currents, timing parameters, and package dimensions.

Uploaded by

software9486
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
282 views10 pages

kvr1333d3n9 4g

This document specifies the features and specifications of a 4GB DDR3-1333 ECC memory module from Kingston Technology. It is composed of 18 256M x 8-bit SDRAM chips in a 240-pin DIMM package running at 1333Mbps with a latency of CL9. The module operates at 1.5V and meets JEDEC timing standards. It also lists the pinout diagram, functional block diagram, operating currents, timing parameters, and package dimensions.

Uploaded by

software9486
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 10

Memory Module Specifications

KVR1333D3E9S/4GHC
4GB 2Rx8 512M x 72-Bit DDR3-1333
CL9 ECC 240-Pin DIMM

Description
This document describes ValueRAM’s 512M x 72-bit (4GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM) ECC memory module, based on
eighteen 256M x 8-bit SDRAMs (2Rx8). The SPD is programmed to JEDEC standard latency 1333Mhz timing of 9-9-9 at 1.5V. This 240-pin
DIMM uses gold contact fingers and requires +1.5V. The electrical and mechanical specifications are as follows:

Feature
Module Assembly
Memory Module: 240-pin
BOM No: 9965525-018.A00LF
Power Interface: 1.5V +/- 0.075V (SSTL_15)
Data Rate: 1333Mbps
Number of Internal Banks: 8 DRAM Supported
Pre-fetch data bit: 8 Hynix C-Die
Burst Length: 8, 4 (burst chop)
Programmable /CAS Latency (CL): 9, 8, 7, 6
Programmable /CAS Write Latency (CWL): 7, 6, 5
On-Die-Termination
ZQ Calibration: DQ drive and ODT
EEPROM with TS (Grade B)
/Reset Pin: Available
Average Refresh Period: 7.8us
PCB Height: 1.18” (30mm), double-side component
RoHS Compliant

Document No. 4806261-001.A00 01/03/12 Page 1


Kingston Technology

DIMM Pin Configuration (Front side/Back side)

A14

Document No. 4806261-001.A00 Page 2


Kingston Technology

Pin Description

Document No. 4806261-001.A00 Page 3


Kingston Technology

Functional Block Diagram:

4 4

Document No. 4806261-001.A00 Page 4


Kingston Technology

Operating Current Table

DDR3-1333 / CL999

720
810
216
270
540
540
270
630
1125
1125
1665
216
1485

Document No. 4806261-001.A00 Page 5


Kingston Technology

1Gb
1Gb
2Gb Unit
110
160 ns
us
us

DDR3 - 1066
DDR3-1333
7-7-7
9-9-9

9
13.125
13.125
36
49.125
6.0
30

Document No. 4806261-001.A00 Page 6


Kingston Technology

DDR3-1333 Timing Parameters

Document No. 4806261-001.A00 Page 7


Kingston Technology

DDR3-1333 Timing Parameters (cont.)

Document No. 4806261-001.A00 Page 8


Kingston Technology

DDR3-1333 Timing Parameters (cont.)

Document No. 4806261-001.A00 Page 9


Kingston Technology

PACKAGE DIMENSIONS

T E C H N O L O G Y

Units: millimeters 133.35


30.00

18.80
15.80
11.00
8.00

0.00
0.00

54.70

Document No. 4806261-001.A00 Page 10

You might also like