SDT9309
SDT9309
SDT9309
POWERSEM GmbH, Walpersdorfer Str. 53 2005 POWERSEM reserves the right to change limits, test conditions and dimensions
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
PSDT 90
300 IT(OV)
1:TVJ= 125°C T =25°C
------
ITSM
[A] VJ ITSM (A)
200 100
1.4
150 tgd
1.2
1
100 10 0 VRRM
0.8
1/2 VRRM
50
IF 0.6 1 VRRM
1 2
0 1 0.4
0.5 1 1.5 2 10
100
1000 0 1 2 3
VF[V] I [mA]
G
10 10 t[ms] 10 10
Fig. 1 Forward current vs. Fig. 2 Gate trigger delay time Fig. 3 Surge overload current
voltage drop per diode or per diode (or thyristor) IFSM,
thyristor ITSM: Crest value t: duration
POWERSEM GmbH, Walpersdorfer Sr. 53 2005 POWERSEM reserves the right to change limits, test conditions and dimensions
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
PSDT 90
10
120
V 1: IGT, TVJ = 125°C DC
2: IGT, TVJ = 25°C [A] sin.180°
3: IGT, TVJ = -40°C 100 rec.120°
4: PGAV = 0.5 W rec.60°
5: PGM = 5 W
rec.30°
6: PGM = 10W 80
6
1 60
5
40
4
VG 3
2 20
1 TAV
0
0.1 50 100 150 200
10 0 10 1 IG 10 2 10 3 mA 10 4
T C (°C)
Fig.4 Gate trigger characteristic Fig.5 Maximum forward current
at case temperature
K/W
1
Z thJK
0.8
Z thJC
0.6
0.4
0.2
Z th
0.01 0.1 1 10
t[s]
Fig.6 Transient thermal impedance per thyristor or diode
(calculated)
80
400
TC
[W] PSDT 90 85
0.14 0.08 = RTHCA [K/W]
350
0.2 90
300
95
250 0.31
100
200
105
0.51
150
110
DC
100 sin.180° 115
rec.120° 1.14
50 rec.60° 120
PVTOT rec.30° °C
0 125
POWERSEM GmbH, Walpersdorfer Sr. 53 2005 POWERSEM reserves the right to change limits, test conditions and dimensions
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20