TEA1716T: 1. General Description
TEA1716T: 1. General Description
TEA1716T: 1. General Description
1. General description
The TEA1716T integrates a Power Factor Corrector (PFC) controller and a controller for a
Half-Bridge resonant Converter (HBC) in a multi-chip IC. It provides the drive function for
the discrete MOSFET in an up-converter and for the two discrete power MOSFETs in a
resonant half-bridge configuration.
The HBC module is a high-voltage controller for a zero-voltage switching LLC resonant
converter. It contains a high-voltage level shift circuit and several protection circuits
including OCP, open-loop protection, capacitive mode protection and a general purpose
latched protection input.
TEA1716T controlled PFC circuit and resonant converter are very flexible. It can be used
for a broad range of applications over a wide mains voltage range. Combining PFC and
HBC controllers in a single IC makes the TEA1716T ideal for controlling power supplies in
LCD and plasma televisions.
Using the TEA1716T highly efficient and reliable power supplies providing from 90 W to
500 W can be designed easily using the TEA1716T, with a minimum of external
components.
The integrated Burst mode and power management functionality of TEA1716T enable
resonant applications that meet the Energy Using Product Directive (EuP) lot 6
(< 0.5 W in Standby mode).
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
3. Applications
LCD television
Plasma television
Notebook adapter
Desktop and all-in-one PCs
4. Ordering information
Table 1. Ordering information
Type number Package
Name Description Version
TEA1716T/2 SO24 plastic small outline package; 24 leads; body width 7.5 mm SOT137-1
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
5. Block diagram
6160$,16
9 683+6
0$,165(6(7
81'(592/7$*( +LJKVLGHGULYHU
9
6(16,1* 6(5,(6
$1'&/$03 67$%,/,=(5$1' /(9(/
*$7(+6
6835(*6(16,1* 6+,)7(5
9
0$,16
+%
&203(16$7,21
+967$5783 6833/< 6:,7&+ /RZVLGHGULYHU
6285&( &21752/ &21752/ 6835(*
217,0(5 *$7(/6
2))7,0(/,0,7
)5(48(1&</,0,7 $'$37,9(
+967$5783 ,17(51$/
12129(5/$3 3*1'
6(/(&7,21 6833/,(6
9 6(16,1*
(UURU
DPSOLILHU
DQGFODPS %2267
9 &203(16$7,21
&2033)& 683,&
9 &$3$&,7,9(
67$57$1'
02'(
3)&GULYHU 9 81'(592/7$*(
6(16,1*
6835(* 6833/<02'8/( 6(16,1*
3)& 616&85+%&
*$7(3)&
&21752/
9 29(5&855(17
62)767$57
6(16,1* 9 616)%
5(6(7 +%&&21752//(5
9
23(1/223 )(('%$&.
9
3527(&7,21 )5(48(1&< 6(16,1* ,1387
9
5&3527 $1'5(67$57 &21752/
7,0(5
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
6. Pinning information
6.1 Pinning
#
"
!
!
"
#
DDD
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
7. Functional description
• Supply module:
Supply management for the IC. Includes the restart and (latched) shutdown states
• Protection and restart timer:
An externally adjustable timer used for delayed protection and restart timing
• Enable input:
Control input for enabling and disabling the controllers; when disabled has very low
current consumption
• PFC controller:
Controls and protects the Power Factor (PF) converter. Generates a 400 V (DC)
boost voltage from the rectified AC mains input with a high PF
• HBC controller:
Controls and protects the resonant converter; generates a regulated mains isolated
output voltage from the 400 V (DC) boost voltage
• Burst input:
Control input for Burst mode operation; activates the Burst stop state in which the
current consumption is low
Figure 1 shows the block diagram of the TEA1716T. A typical application is illustrated in
Figure 17.
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
The IC starts operating when the voltage on the SUPIC pin reaches the start level,
provided the voltage on the SUPREG pin has also reached the start level. The start level
depends on the condition of the SUPHV pin:
The IC stops operating when VSUPIC < Vuvp(SUPIC). Vuvp(SUPIC). This voltage is the SUPIC
pin UnderVoltage Protection (UVP) voltage (UVP-SUPIC; see Section 7.9). The PFC
controller stops switching immediately but the HBC controller continues operating until the
low-side MOSFET is active.
The current consumption depends on the state of the IC. The TEA1716T operating states
are described in Section 7.3.
• Disabled IC state
When the IC is disabled using the SSHBC/EN pin, the current consumption
(Idism(SUPIC)) is very low.
• SUPIC charge, SUPREG charge, Thermal hold, Restart and Protection shutdown
states
Only a small section of the IC is active while CSUPIC and CSUPREG are charging during
a restart sequence before start-up or during shutdown after a protection function has
been activated. The PFC and HBC controllers are disabled. Current consumption is
limited to Iprotm(SUPIC).
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
The SUPIC pin has a low short circuit detection voltage (Vscp(SUPIC) = 0.65 V). The current
dissipated in the HV start-up source is limited while VSUPIC < Vscp(SUPIC)
(see Section 7.2.4).
The SUPREG series stabilizer is enabled after CSUPIC has been fully charged. Enabling
the stabilizer after charging ensures that any optional external circuitry connected to
SUPREG does not dissipate any of the start-up current.
To ensure that the external MOSFETs receive sufficient gate drive current, the voltage on
the SUPREG pin must reach Vstart(SUPREG). In addition, the voltage on the SUPIC pin
must reach the start level. The IC starts operating when both voltages reach their start
levels.
• The IC stops operating to prevent unreliable switching because the gate driver voltage
is too low. The PFC controller stops switching immediately, but the HBC controller
continues until the low-side stroke is active.
• The maximum current from the internal SUPREG series stabilizer is reduced to
Ich(red)(SUPREG) (5.4 mA). This feature reduces the dissipation in the series stabilizer
when an overload occurs at the SUPREG pin while the SUPIC pin is supplied from an
external DC supply.
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Careful selection of the appropriate diode minimizes the voltage drop between SUPREG
and SUPHS, especially when large MOSFETs and high switching frequencies are used.
Short circuit protection on the SUPIC pin (SCP-SUPIC; see Section 7.9) limits dissipation
in the HV start-up source when SUPIC is shorted to ground. SCP-SUPIC limits the current
on SUPHV to Ired(SUPHV) when the voltage on SUPIC is less than Vscp(SUPIC).
Under normal operating conditions, the voltage on the SUPIC pin exceeds Vscp(SUPIC) very
quickly after start-up and the HV start-up source switches to Inom(SUPHV).
During start-up and restart, the HV start-up source charges CSUPIC and regulates the
voltage on SUPIC using hysteretic control. The start level has a small amount of
hysteresis Vstart(hys)(SUPIC). The HV start-up source switches off when VSUPIC exceeds the
start level Vstart(hvd)(SUPIC). Current consumption through the SUPHV pin (Itko(SUPHV)) is
low.
Once start-up is complete and the HBC controller is operating, SUPIC is supplied from the
HBC transformer auxiliary winding. In this operational state, the HV start-up source is
disabled.
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
67$57
893VXSSOLHV \HV
126833/<
$OORII
HQDEOH3)& QR 893VXSSOLHV QR
',6$%/('O&
2QO\(QDEOHO&GHWHFWLRQDFWLYH
([SODQDWLRQIORZGLDJUDPV\PEROV (QDEOH3)& \HV
67$7(1$0( 7+(50$/+2/'
0LQLPXPIXQFWLRQDOLW\DFWLYH
DFWLRQ
DFWLRQ 273 QR
'LVDEOHGLWHPVDUHQRWPHQWLRQHG
H[LWFRQGLWLRQ H[LWFRQGLWLRQ 683,&&+$5*(
UHDFKHG UHDFKHG
+9VWDUWXSVRXUFHRQ
893683,& QR 273 \HV
H[LWFRQGLWLRQ
QH[WVWDWHFDQEHHQWHUHG 6835(*&+$5*(
IURPDQ\VWDWHZKHQH[LW
FRQGLWLRQLVWUXH +9VWDUWXSVRXUFHRQ
6HULHVVWDELOL]HURQ
8936835(* QR 893683,& \HV 273 \HV
%2267&+$5*(
+9VWDUWXSVRXUFHRQ
6HULHVVWDELOL]HURQ
3URWHFWLRQWLPHULVDFWLYDWHGE\
3)&RQ
)63RXWSXW
2/3+%&
893ERRVW QRDQG
2&5+%& 6&3ERRVW \HV 8936835(* \HV 893683,& \HV 273 \HV
(QDEOHO& \HV
+)3
23(5$7,21$/6833/<
6HULHVVWDELOL]HURQ
3)&RQ
+%&RQ
5(67$57 3527(&7,216+87'2:1
+9VWDUWXSVRXUFHRQ
5HVWDUWWLPHURQ 0DLQVUHVHW \HV
5HVWDUWWLPHSDVVHG
%85676723
6HULHVVWDELOL]HURQ
DDD
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Figure 4 shows the internal functionality. When a voltage is present on the SUPHV pin or
on the SUPIC pin, a current Ipu(EN) (42 A) flows from the SSHBC/EN pin. If the pin is not
pulled down, the current increases the voltage up to Vpu(EN) (3 V). Since the voltage is
above both Ven(PFC)(EN) (1.2 V) and Ven(IC)(EN) (2.2 V), the IC is enabled.
The IC is disabled when the voltage on the SSHBC/EN pin is pulled down under both
Ven(PFC)(EN) and Ven(IC)(EN) via an optocoupler. The optocoupler is driven from the HBC
transformer secondary side (see Figure 4). The PFC controller stops switching
immediately, but the HBC controller continues switching until the low-side stroke is active.
It is also possible to control the voltage on the SSHBC/EN pin from another circuit on the
secondary side via a diode. The external pull-down current must be larger than the
internal soft-start charge current Iss(hf)(SSHBC).
If the voltage on the SSHBC/EN pin is pulled down under Ven(IC)(EN), but not under
Ven(PFC)(EN), only the HBC is disabled. This feature is useful when another power
converter is connected to the PFC boost voltage.
The low-side power switch of the HBC is on when the HBC is disabled using the
SSHBC/EN pin.
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
(QDEOHGHWHFWLRQ
OSX(1
9SX(1
(QDEOHVXSSO\
VLJQDOWR!9
66+%&(1
9HQ3)&(1
(QDEOH,F3IF
7RVRIWVWDUW
FLUFXLW ,&
DDD
7.5 IC protection
• Restart
When the TEA1716T enters the Restart state, the PFC and HBC controllers are
switched off. After a period defined by the Restart timer, the IC automatically restarts
following the normal start-up cycle.
• Protection shutdown
When the TEA1716T enters the Protection shutdown state, the PFC and HBC
controllers are switched off. The Protection shutdown state is latched, so the IC does
not automatically start up again. It can be restarted by resetting the Protection
shutdown state in one of the following ways:
– Lowering VSUPIC and VSUPHV below their respective reset levels, Vrst(SUPIC) and
Vrst(SUPHV)
– Using a fast shutdown reset (see Section 7.5.3).
– Using the enable pin (see Section 7.4)
• Thermal hold
In the Thermal hold state, the PFC and HBC controllers are switched off. The Thermal
hold state remains active until the IC junction temperature drops to approximately
10 C below Totp (see Section 7.5.6).
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Ich(slow)(RCPROT)
IRCPROT 0
Vu(RCPROT)
VRCPROT
passed
Protection time
t
014aaa853
Figure 5 shows the operation of the protection timer. When an error condition occurs, a
fixed current Ich(slow)(RCPROT) (100 A) flows from the RCPROT pin and charges Cprot.
Rprot causes the voltage to increase exponentially. The protection time elapses when the
voltage on the RCPROT pin reaches the upper switching level Vu(RCPROT) (4 V). When the
protection time has elapsed, the appropriate protective action is taken and Cprot is
discharged.
If the error condition is removed before the voltage on the RCPROT pin reaches
Vu(RCPROT), Cprot is discharged using Rprot and no action is taken.
An external circuit to force a restart can increase the RCPROT voltage to exceed
Vu(RCPROT).
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
yes
Restart request
no
Vu(RCPROT)
VRCPROT
Vl(RCPROT)
0
passed
Restart time
t
014aaa854
Figure 6 shows the operation of the restart timer. Normally Cprot is discharged to 0 V.
When a restart is requested, Cprot is quickly charged to the upper switching level
Vu(RCPROT). Then the RCPROT pin becomes high ohmic and Cprot discharges through
Rprot. The restart time has elapsed when VRCPROT reaches the lower switching level
Vl(RCPROT) (0.5 V). The IC restarts and Cprot is discharged.
Fast shutdown reset causes a faster reset. When the mains supply is interrupted, the
voltage on the SNSMAINS pin falls. When VSNSMAINS falls below Vrst(SNSMAINS) and then
increases again by a hysteresis value, the IC leaves the Protection shutdown state. The
boost capacitor Cboost does not require discharging to trigger a new start-up.
The Protection shutdown state can also be ended by pulling down the enable input
(the SSHBC/EN pin).
Additional external protection circuits, such as an external OTP circuit, can be connected
to this pin. Connect them to the SNSOUT pin using a diode to ensure that an error
condition triggers an OVP event.
Under normal conditions, the output voltage is present before the protection time is
expired and no protective action is taken. The Restart state is activated if the FSP output
event is still active when the protection time has expired.
The voltage on the SNSBURST pin defines the transition from Operational supply state
(= burst-on period) to Burst stop state (= burst-off period) and back).
The voltage on the SNSFB pin represents the level of power that is converted. The
voltage on the SNSBURST pin can be related to the SNSFB pin using an external resistor
divider. The SNSBURST pin has an internal switching level Vburst(SNSBURST) (3.5 V) and a
fixed hysteresis Vburst(hys)(SNSBURST) (24 mV). In addition, a switched current flowing into
the SNSBURST pin, Iburst(hys)(SNSBURST) (3 A) and the resistance of the external divider
determine the effective hysteresis. The current flows when the SNSBURST voltage is less
than Vburst(SNSBURST).
The PFC and HBC controller operation is suspended when the voltage on the
SNSBURST pin falls under Vburst(SNSBURST). The PFC continues as long as the boost
voltage is still below the regulation level. Then it stops with a soft-stop. The HBC stops
almost directly when the GATELS pin becomes active. The Burst stop state is entered
when both PFC and HBC have stopped switching. In the Burst stop state, the current
consumption of the IC is low and the SNSOUT pin is pulled low. The SNSOUT signal can
be used for additional functionality in the application.
Burst mode operation is not enabled until the SNSOUT pin has reached the Vfsp(SNSOUT)
level once to avoid unwanted activation of the burst mode during start-up.
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
The PFC controller uses valley switching to minimize losses. A primary stroke is only
started once the previous secondary stroke ends and the voltage across the PFC
MOSFET reaches a minimum value.
• The error amplifier and the loop compensation using the voltage on the COMPPFC
pin
At Vton(COMPPFC)zero (3.5 V), the on-time is reduced to zero. At Vton(COMPPFC)max the
on-time is at a maximum
• Mains compensation using the voltage on the SNSMAINS pin
7.7.2.1 PFC error amplifier (COMPPFC and SNSBOOST pins)
The boost voltage is divided using a high-ohmic resistive divider. It is supplied to the
SNSBOOST pin. The transconductance error amplifier, which compares the SNSBOOST
voltage with an accurate trimmed reference voltage Vreg(SNSBOOST), is connected to this
pin. The external loop compensation network on the COMPPFC pin filters the output
current. In a typical application, a resistor and two capacitors set the regulation loop
bandwidth.
The transconductance of the error amplifier is not constant, which improves the start-up
behavior and transient response. The transconductance significantly increases when the
SNSBOOST voltage is more than 80 mV above or below the reference voltage. The result
is a higher output current to the COMPPFC pin. Figure 7 shows the behavior of the
transconductance amplifier.
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
,&2033)&
9RIIVHWJPKLJK
P9
P$9
9616%22679
P$9
$9
DDD
The TEA1716T contains a correction circuit to compensate for this effect. The average
mains voltage is measured using the SNSMAINS pin. The information is supplied to an
internal compensation circuit.
Figure 8 shows the relationship between the SNSMAINS voltage, the COMPPFC voltage,
and the on-time. It is possible to keep the regulation loop bandwidth constant over the full
mains input range using this compensation. This feature provides a fast transient
response on load steps, while still meeting the class-D MHR requirements.
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
ton(max)(lowmains)
VSNSMAINS = 0.97 V
on-time
VSNSMAINS = 3.3 V
ton(max)(highmains)
0
Vton(COMPPFC)max Vton(COMPPFC)zero VCOMPPFC
014aaa855
After some time, the transformer becomes demagnetized and current stops flowing in the
boost output. From that moment, VSNSAUXPFC > Vdemag(SNSAUXPFC) and valley detection is
started. The MOSFET remains off.
To ensure that switching continues under all circumstances, the MOSFET is forced to
switch on if the magnetizing of the transformer (VSNSAUXPFC < Vdemag(SNSAUXPFC)) is not
detected within tto(mag) (50 s) after the GATEPFC pin goes LOW.
connect a 5 k series resistor to this pin to protect the internal circuitry, against for
example lightning. Place the resistor close to the IC on the PCB to prevent incorrect
switching due to external disturbances.
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
on
GATEPFC
off
Vboost
VRect
Dr(PFC)
0
VRect/N
Aux(PFC)
0
Vdemag(SNSAUXPFC)
(Vboost - VRect)/N
lTPFC
0
demagnetized
Demagnetization
magnetized
Valley
(= top for detection)
t
014aaa856
The valley sensing block connected to the SNSAUXPFC pin detects the valleys. This
block measures the PFC transformer auxiliary winding voltage, which is a reduced and
inverted copy of the MOSFET drain voltage. When a valley of the drain voltage (= top at
SNSAUXPFC voltage) is detected, the MOSFET is switched on.
If a top is not detected on the SNSAUXPFC pin (= a valley at the drain) within tto(vrec)
(4 s) after demagnetization is detected, the MOSFET is forced to switch on.
The minimum off-time is limited at toff(PFC)min to ensure correct control of the PFC
MOSFET under all circumstances.
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Connecting a resistor Rss(PFC) and capacitor Css(PFC) between the SNSCURPFC pin and
the current sense resistor Rcur(PFC) achieves this. During start-up, an internal current
source, Ich(ss)(PFC), charges the capacitor to VSNSCURPFC = Ich(ss)(PFC) Rss(PFC).
The voltage is limited to the maximum PFC soft-start clamp voltage, Vclamp(ss)PFC. The
additional voltage across the charged capacitor reduces the peak current. After start-up,
the internal current source is switched-off, capacitor Css(PFC) discharges across Rss(PFC)
and the peak current increases.
The start level and the time constant of the rising primary current can be adjusted
externally by changing the values of Rss(PFC) and Css(PFC).
= R ss PFC C ss PFC
Switching on the internal current source Ich(ss)(PFC) starts a soft-stop. Ich(ss)(PFC) charges
Css(PFC). The increasing capacitor voltage decreases the peak current. The charge current
flows when the voltage on the SNSCURPFC pin is less than the maximum PFC soft-start
voltage (0.5 V). If VSNSCURPFC exceeds the maximum PFC soft-start voltage, the soft-start
current source starts limiting the charge current. To determine accurately if the capacitor is
charged, the voltage is only measured during the PFC power switch off-time. The PFC
operation is stopped when VSNSCURPFC > Vstop(ss)(PFC).
In the Burst stop state with the PFC not operating, the SNSCURPFC pin is kept at the
maximum PFC soft-start voltage, enabling an immediate start of the soft-start sequence
when the PFC must operate after the Burst stop state.
A voltage peak appears on VSNSCURPFC when the PFC MOSFET is switched on due to the
discharging of the drain capacitance. The leading-edge blanking time (tleb(PFC)) ensures
that the overcurrent sensing block does not react to this transitory peak.
VSNSMAINS is clamped to a minimum value of Vpu(SNSMAINS) for fast restart as soon as the
mains input voltage recovers after a mains-dropout. The PFC starts or restarts when
VSNSMAINS exceeds the start level Vstart(SNSMAINS).
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Overvoltage protection is also triggered when an open circuit at the resistor connected
between the SNSBOOST pin and ground.
The SNSBOOST pin draws a small input current Iprot(SNSBOOST). If this pin gets
disconnected, the residual current pulls down VSNSBOOST, triggering short circuit
protection (SCP-boost). This combination creates an open-loop protection (OLP-PFC).
7.8.1 HBC high-side and low-side driver (GATEHS and GATELS pins)
Both drivers have an identical driving capability. The output of each driver is connected to
the equivalent gate of an external high-voltage power MOSFET.
The low-side driver is referenced to the PGND pin and is supplied from the SUPREG pin.
The high-side driver is floating. The reference for the high-side driver is the HB pin,
connected to the midpoint of the external half-bridge. The high-side driver is supplied from
the SUPHS pin which is connected to the external bootstrap capacitor CSUPHS. When the
low-side MOSFET is on, the bootstrap capacitor is charged from the SUPREG pin using
the external diode DSUPHS.
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
• A divider is used for alternate switching of the high and low-side MOSFETs for each
oscillator cycle. The oscillator frequency is twice the half-bridge frequency.
• The controlled oscillator determines the switch-off point.
• Adaptive non-overlap time sensing determines the switch-on point. This function is
the adaptive non-overlap time.
• Several protection circuits and the state of the SSHBC/EN input specify if the
resonant converter is allowed to start switching.
• At start-up pin GATELS is HIGH. Node HB is pulled to ground and the bootstrap
capacitor CSUPHS is charged.
• During the burst off-time, both GATELS and GATEHS are LOW. The disabled
MOSFETs prevent the discharge of the resonant tank.
GATEHS
GATELS
Vboost
HB
ITr(HBC) 0
CFMIN
t
014aaa857
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
After the charge or discharge cycles, the body diode of the MOSFET starts conducting.
Because the voltage across the MOSFET is zero, there are no switching losses when the
MOSFET is switched on. This operating mode is called inductive mode. In inductive mode
the switching frequency is above the resonance frequency and the resonant tank has an
inductive impedance.
The HB transition time depends on resonant current amplitude when switching starts.
There is a complex relationship between this amplitude, the frequency, the boost voltage
and the output voltage. Ideally, the IC switches on the MOSFET when the HB transition is
complete. If it waits any longer, the HP voltage can swing back, especially at high output
loads. The advanced adaptive non-overlap time makes it unnecessary to choose a fixed
dead time (which is always a compromise). This saves on external components.
Adaptive non-overlap time sensing measures the HB slope after one MOSFET has been
switched off. Normally, the HB slope starts immediately (the voltage starts rising or falling).
Once the transition at the HB node is complete, the slope ends (the voltage stops
rising/falling). This slope end is detected by the ANO time sensor and the other MOSFET
is switched on. In this way, the non-overlap time is automatically optimized even when the
HB transition cannot be fully completed, which minimizes losses.
Figure 11 illustrates the operation of the adaptive non-overlap time function in Inductive
mode.
GATEHS
GATELS
Vboost
HB
0 t
fast HB slope slow HB slope incomplete HB slope
014aaa858
The non-overlap time depends on the HB slope but it has upper and lower limits.
The maximum non-overlap time is limited to the oscillator charge time. If the HB slope is
longer than the oscillator charge time (1⁄4 of HB switching period), the MOSFET is forced
to switch on. In this case, the MOSFET is not soft switching. This limitation ensures that,
the MOSFET on-time is at least 1⁄4 of the HB switching period.
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
The advanced adaptive non-overlap time of the TEA1716T always waits until the slope at
the half-bridge node starts. It guarantees safe switching of the MOSFETs in all
circumstances. Figure 12 shows the adaptive non-overlap time function operation in
Capacitive mode.
In Capacitive mode, half the resonance period can elapse before the resonant current
changes back to the correct polarity and starts charging the half-bridge node. The
oscillator is slowed down until the half-bridge slope starts to allow this relatively long
waiting time. See Section 7.8.5 for more details on the oscillator.
GATEHS
0
GATELS
0
Vboost
no HB slope
HB
wrong polarity
ITr(HBC) 0
CFMIN
0 t
delayed
oscillator
014aaa939
delayed switch-on
during capacitive mode
The MOSFET is forced to switch on when the half-bridge slope fails to start and the
oscillator voltage reaches Vu(CFMIN).
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
9616)%!9
9IPD[616)% 9IPLQ616)% 9IPD[66+%& 9IPLQ66+%&
9616)%9 966+%&(19
DDD
• Capacitor Cfmin connected between the CFMIN pin and ground sets the minimum
frequency in combination with an internally trimmed current source Iosc(min)
• Internal resistor Rfmax sets the frequency range and thus the maximum frequency.
Resistor Rfmax has a fixed value (18 k typical)
The oscillator frequency depends on the charge and discharge currents of Cfmin. The
charge and discharge current contains a fixed component, Iosc(min), which determines the
minimum frequency. In addition, it contains a variable component that is 4.9 times greater
than the current flowing through resistor Rfmax:
The maximum frequency of the oscillator is internally limited. The HB frequency is limited
to flimit(HB) (minimum 500 kHz).
The half-bridge slope controls the oscillator. The oscillator charge current is initially set to
a low value Iosc(red) (30 A). When the start of the half-bridge slope is detected, the charge
current is increased to its normal value. This feature is used in combination with the
adaptive non-overlap time function as described in Section 7.8.4.2 and Figure 12.
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
The length of time the oscillator current is low is negligible under normal operating
conditions because the half-bridge slope normally starts directly after the MOSFET is
switched off.
The SNSFB pin is a voltage input. At an SNSFB voltage of Vfmin(SNSFB) (6.4 V) the
frequency is at a minimum. The maximum frequency is reached at Vfmax(SNSFB) (4.1 V).
The maximum frequency that can be reached using the SNSFB pin is lower (70 %) than
the maximum frequency that can be reached using the SSHBC/EN pin.
The HBC controller features Open-Loop Protection (OLP), which monitors the SNSFB
voltage. When VSNSFB exceeds Volp(SNSFB), the protection timer is started. The Restart
state is activated if the OLP condition is still present after the protection time has elapsed.
Soft-start utilizes the voltage on the SSHBC/EN pin. The external capacitor Css(HBC) sets
the timing of the soft-start. The SSHBC/EN pin is also used as an enable input. Soft-start
voltage levels are above the enable voltage thresholds.
At initial start-up, VSSHBC/EN < Vfmax(SSHBC) (3.2 V), which corresponds with the maximum
frequency. During start-up, CSSHBC is charged, VSSHBC/EN rises and the frequency
decreases. The contribution of the soft-start function is zero when
VSSHBC/EN > Vfmin(SSHBC) (8.0 V).
area between Vfmax(SSHBC) and Vfmin(SSHBC). The margins avoid frequency disturbance
during normal output voltage regulation, but ensure that overcurrent regulation can
respond quickly.
The charge and discharge current can have a high value, Iss(hf)(SSHBC) (160 A), resulting
in fast charging and discharging. Or it can have a low value, Iss(lf)(SSHBC) (40 A), resulting
in a slow charging and discharging. This two-speed soft-start sweep allows a combination
of a short start-up time for the resonant converter and stable regulation loops (such as
overcurrent regulation).
The fast charge and discharge is used for the upper frequency range where
VSSHBC/EN < Vss(hf-lf)(SSHBC) (5.6 V). In the upper frequency range, the currents in the
converter do not react strongly to frequency variations.
The slow charge and discharge is used for the lower frequency range where
VSSHBC/EN > Vss(hf-lf)(SSHBC) (5.6 V). In the lower frequency range, the currents in the
converter react strongly to frequency variations.
Section 7.8.10.2 describes how the two-speed soft-start function is used for overcurrent
regulation.
The soft-start capacitor is not charged or discharged during non-operation time in Burst
mode. The soft-start voltage does not change during this time.
When a protection function is activated, the oscillator control input is disconnected from
the soft-start capacitor, Css(HBC), which is connected between the SSHBC/EN pin and
ground. The switching frequency is immediately set to a maximum. Setting the switching
frequency to a maximum restores safe switching operation in most cases. At the same
time, the capacitor is discharged to the maximum frequency level, Vfmax(SSHBC). Once
VSSHBC/EN has reached this level, the oscillator control input is connected to the pin again
and the normal soft-start sweep follows. Figure 14 shows the soft-start reset and the
two-speed frequency sweep downwards.
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
on
Protection
off
Vfmin(SSHBC)
VSSHBC/EN Vss(hf-lf)(SSHBC)
Vfmax(SSHBC)
fmax
fHB
fmin
0 t
regulation fmax fast slow sweep regulation
forced sweep
014aaa864
HFP senses the voltage across the internal resistor Rfmax. This voltage indicates the
current frequency. When the frequency is higher than 75 % of the soft-start frequency
range, the protection timer is started. The 75 % level corresponds to an Rfmax voltage of
Vhfp(RFMAX) (4.31 V).
• OverCurrent Regulation (OCR) which increases the frequency slowly; the protection
timer is also started.
• OverCurrent Protection (OCP) which steps to maximum frequency.
A boost voltage compensation function is used to reduce the variation in the output
current protection level.
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
The primary current is higher when the boost voltage is low for the same output power.
Boost compensation is included to reduce the dependency of the protected output current
level on the boost voltage. The boost compensation sources and sinks a current from the
SNSCURHBC pin. This current creates a voltage drop across the series resistor Rcurcmp.
The amplitude of the current is linearly dependent on the boost voltage. At nominal boost
voltage, the current is zero and the voltage VCur(HBC) across the current sense resistor is
also present on the SNSCURHBC pin. At the UVP-boost start level Vuvp(SNSBOOST), the
current is at a maximum. The current sink or source direction depends on the active gate
signal. The voltage drop created across Rcurcmp reduces the amplitude at the pin. This
reduction in amplitude results in a higher effective current protection level. The Rcurcmp
value sets the amount of compensation. Figure 15 shows how the boost compensation
works for an artificial current signal. The sinking compensation current only flows when
VSNSCURHBC is positive because of the circuit implementation.
Vreg
Vboost
Vuvp
GATEHS
t
GATELS
t
sink
sink current only with positive VSNSCURHBC
ISNSCURHBC 0 t
source
VSNSCURHBC
Vocp(HBC)
Vocr(HBC)
VSNSCURHBC
0 t
-Vocr(HBC)
-Vocp(HBC)
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
the following high-side to low-side non-overlap time. The negative comparator is active
during the remaining time. If either level is exceeded, the frequency is slowly increased.
Discharging the soft-start capacitor achieves this.
Each time the OCR level is exceeded, the event is latched until the next stroke and the
soft-start discharge current is enabled. When both the positive and negative OCR levels
are exceeded, the soft-start discharge current flows continuously.
Overcurrent regulation is very effective at limiting the output current during start-up. A
smaller soft-start capacitor is used to achieve a faster start-up. Using a smaller capacitor
can result in an output current that is too high at times. However, the OCR function slows
down the frequency sweep when required to keep the output current within the specified
limits. Figure 16 shows the operation of the OCR during output voltage start-up.
Iocr
ICur(HBC) 0 t
-Iocr
Iss(hf)(SSHBC)
ISSHBC/EN Iss(If)(SSHBC)
-Iss(If)(SSHBC) t
-Iss(hf)(SSHBC)
Vfmin(SSHBC)
VSSHBC/EN
Vss(hf-lf)(SSHBC)
Vfmax(SSHBC)
0 t
Vreg
VO
0 t
Fast soft start sweep (charge and discharge) Slow soft start sweep (charge and discharge)
014aaa866
The protection timer is also started. The Restart state is activated when the OCR-HBC
condition is still present after the protection time has elapsed.
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
When the OCP level is reached, the frequency immediately jumps to the maximum value
using the soft-start reset, then a normal sweep down.
Harmful switching in Capacitive mode is avoided using the adaptive non-overlap time
function (see Section 7.8.4.2). An extra action is performed which results in Capacitive
Mode Regulation (CMR). CMR causes the half-bridge circuit to return to Inductive mode
from Capacitive mode.
Capacitive mode is detected when the HB slope does not start within tto(cmr) after the
MOSFETs have switched off. Detection of Capacitive mode increases the switching
frequency. This increase is caused by discharging the soft-start capacitor with a relatively
high current Icmr(hf)(SSHBC) fimmediately after tto(cmr) expires until the half-bridge slope
starts. The frequency increase regulates the HBC to the border between capacitive and
inductive mode.
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).; All voltages are measured with respect to theSGND
pin; Currents are positive when flowing into the IC; The voltage ratings are valid provided other ratings are not violated;
Current ratings are valid provided the maximum power rating is not violated.
Symbol Parameter Conditions Min Max Unit
Voltages
VSUPHV voltage on pin SUPHV continuous 0.4 +630 V
VSUPHS voltage on pin SUPHS DC 0.4 +570 V
t < 0.5 s 0.4 +630 V
referenced to the HB pin 0.4 +14 V
VSUPIC voltage on pin SUPIC 0.4 +38 V
VSNSAUXPFC voltage on pin SNSAUXPFC 25 +25 V
VSUPREG voltage on pin SUPREG 0.4 +12 V
VSNSOUT voltage on pin SNSOUT 0.4 +12 V
VRCPROT voltage on pin RCPROT 0.4 +12 V
VSNSFB voltage on pin SNSFB 0.4 +12 V
VSSHBC/EN voltage on pin SSHBC/EN 0.4 +12 V
VSNSBURST voltage on pin SNSBURST 0.4 +12 V
VGATEHS voltage on pin GATEHS [1] 0.4 VSUPHS + 0.4 V
VGATELS voltage on pin GATELS [1] 0.4 VSUPREG + 0.4 V
VGATEPFC voltage on pin GATEPFC [1] 0.4 VSUPREG + 0.4 V
VSNSCURHBC voltage on pin SNSCURHBC 5 +5 V
VSNSBOOST voltage on pin SNSBOOST 0.4 +12 V
VSNSMAINS voltage on pin SNSMAINS 0.4 +12 V
VSNSCURPFC voltage on pin SNSCURPFC current limited 0.4 +5 V
VCOMPPFC voltage on pin COMPPFC 0.4 +5 V
VCFMIN voltage on pin CFMIN 0.4 +5 V
VPGND voltage on pin PGND 1 +1 V
Currents
IGATEPFC current into pin GATEPFC duty cycle < 10 % 0.8 +2 A
ISNSCURPFC current into pin SNSCURPFC 1 +10 mA
General
Ptot total power dissipation Tamb < 75 C - 0.8 W
Tstg storage temperature 55 +150 C
Tj junction temperature 40 +150 C
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
[1] Exceeding this rating for short peak currents (t < 10 s) is allowed.
[2] Equivalent to discharging a 100 pF capacitor through a 1.5 k series resistor.
[3] Equivalent to discharging a 200 pF capacitor through a 0.75 H coil and a 10 resistor.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-a) thermal resistance from junction to ambient in free air; JEDEC single 90 K/W
layer test board
10. Characteristics
Table 7. Characteristics
Tamb = 25 C; VSUPIC = 20 V; VSUPHV > 40 V; all voltages are measured with respect to SGND; currents are positive when
flowing into the IC; unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
High-voltage start-up source (pin SUPHV)
Idism(SUPHV) disable mode current on Disabled IC state - 140 - A
pin SUPHV
Ired(SUPHV) reduced current on pin VSUPIC < Vscp(SUPIC) - 1.2 - mA
SUPHV
Inom(SUPHV) nominal current on pin VSUPIC < Vstart(hvd)(SUPIC) 4.3 5.1 - mA
SUPHV
Itko(SUPHV) takeover current on pin VSUPIC > Vstart(hvd)(SUPIC) - 7 - A
SUPHV
Vdet(SUPHV) detection voltage on pin - - 25 V
SUPHV
Vrst(SUPHV) reset voltage on pin VSUPIC < Vrst(SUPIC) - 7 - V
SUPHV
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
[1] The marked levels on this pin are correlated. The voltage difference between the levels has much less spread than the absolute value of
the levels themselves.
[2] Switching level has some hysteresis. The hysteresis falls within the limits.
[3] For a typical application with a compensation network on the COMPPFC pin, like the example in Figure 17.
[4] Minimum required voltage change time for valley recognition on the SNSAUXPFC pin.
[5] Minimum time required between demagnetization detection and V/t = 0 on the SNSAUXPFC pin.
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
616%2267 +% &5HV
&VV3)&
5FXU3)&
6835(*
&2033)& 616)%
616%8567
5SURW
&IPLQ
5&3527 &)0,1
,&
&VV+%&
&SURW 66+%&(1
3*1' 6*1'
'LVDEOH
DDD
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
SO24: plastic small outline package; 24 leads; body width 7.5 mm SOT137-1
D E A
X
y HE v M A
24 13
Q
A2 A
A1 (A 3)
pin 1 index
θ
Lp
L
1 12 detail X
e w M
bp
0 5 10 mm
scale
Note
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
99-12-27
SOT137-1 075E05 MS-013
03-02-19
13. Abbreviations
Table 8. Abbreviations
Acronym Description
ANO Adaptive Non-Overlap
CMOS Complementary Metal-Oxide-Semiconductor'
CMR Capacitive Mode Regulation
DMOS Double-diffused Metal-Oxide-Semiconductor
EMI ElectroMagnetic Interference
FSP Failed Start Protection
HBC Half-Bridge Converter or Controller. Resonant converter which generates the
regulated output voltage.
HFP High-Frequency Protection
HV High-voltage
OCP OverCurrent Protection
OCR OverCurrent Regulation
OLP Open-Loop Protection
OTP OverTemperature Protection
OVP OverVoltage Protection
PFC Power Factor Converter or Controller. Converter which performs the power factor
correction.
UVP UnderVoltage Protection
SCP Short-Circuit Protection
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
15.2 Definitions Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Draft — The document is a draft version only. The content is still under
malfunction of an NXP Semiconductors product can reasonably be expected
internal review and subject to formal approval, which may result in
to result in personal injury, death or severe property or environmental
modifications or additions. NXP Semiconductors does not give any
damage. NXP Semiconductors and its suppliers accept no liability for
representations or warranties as to the accuracy or completeness of
inclusion and/or use of NXP Semiconductors products in such equipment or
information included herein and shall have no liability for the consequences of
applications and therefore such inclusion and/or use is at the customer’s own
use of such information.
risk.
Short data sheet — A short data sheet is an extract from a full data sheet
Applications — Applications that are described herein for any of these
with the same product type number(s) and title. A short data sheet is intended
products are for illustrative purposes only. NXP Semiconductors makes no
for quick reference only and should not be relied upon to contain detailed and
representation or warranty that such applications will be suitable for the
full information. For detailed and full information see the relevant full data
specified use without further testing or modification.
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the Customers are responsible for the design and operation of their applications
full data sheet shall prevail. and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
Product specification — The information and data provided in a Product design. It is customer’s sole responsibility to determine whether the NXP
data sheet shall define the specification of the product as agreed between Semiconductors product is suitable and fit for the customer’s applications and
NXP Semiconductors and its customer, unless NXP Semiconductors and products planned, as well as for the planned application and use of
customer have explicitly agreed otherwise in writing. In no event however, customer’s third party customer(s). Customers should provide appropriate
shall an agreement be valid in which the NXP Semiconductors product is design and operating safeguards to minimize the risks associated with their
deemed to offer functions and qualities beyond those described in the applications and products.
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
15.3 Disclaimers customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Limited warranty and liability — Information in this document is believed to
Semiconductors products in order to avoid a default of the applications and
be accurate and reliable. However, NXP Semiconductors does not give any
the products or of the application or use by customer’s third party
representations or warranties, expressed or implied, as to the accuracy or
customer(s). NXP does not accept any liability in this respect.
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no Limiting values — Stress above one or more limiting values (as defined in
responsibility for the content in this document if provided by an information the Absolute Maximum Ratings System of IEC 60134) will cause permanent
source outside of NXP Semiconductors. damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
In no event shall NXP Semiconductors be liable for any indirect, incidental,
the Recommended operating conditions section (if present) or the
punitive, special or consequential damages (including - without limitation - lost
Characteristics sections of this document is not warranted. Constant or
profits, lost savings, business interruption, costs related to the removal or
repeated exposure to limiting values will permanently and irreversibly affect
replacement of any products or rework charges) whether or not such
the quality and reliability of the device.
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory. Terms and conditions of commercial sale — NXP Semiconductors
Notwithstanding any damages that customer might incur for any reason products are sold subject to the general terms and conditions of commercial
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards sale, as published at http://www.nxp.com/profile/terms, unless otherwise
customer for the products described herein shall be limited in accordance agreed in a valid written individual agreement. In case an individual
with the Terms and conditions of commercial sale of NXP Semiconductors. agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
Right to make changes — NXP Semiconductors reserves the right to make applying the customer’s general terms and conditions with regard to the
changes to information published in this document, including without purchase of NXP Semiconductors products by customer.
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior No offer to sell or license — Nothing in this document may be interpreted or
to the publication hereof. construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Export control — This document as well as the item(s) described herein product for such automotive applications, use and specifications, and (b)
may be subject to export control regulations. Export might require a prior whenever customer uses the product for automotive applications beyond
authorization from competent authorities. NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
Non-automotive qualified products — Unless this data sheet expressly
liability, damages or failed product claims resulting from customer design and
states that this specific NXP Semiconductors product is automotive qualified,
use of the product for automotive applications beyond NXP Semiconductors’
the product is not suitable for automotive use. It is neither qualified nor tested
standard warranty and NXP Semiconductors’ product specifications.
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
15.4 Trademarks
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer Notice: All referenced brands, product names, service names and trademarks
(a) shall use the product without NXP Semiconductors’ warranty of the are the property of their respective owners.
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
17. Contents
1 General description . . . . . . . . . . . . . . . . . . . . . . 1 7.7.2.2 PFC mains compensation
2 Features and benefits . . . . . . . . . . . . . . . . . . . . 2 (SNSMAINS pin) . . . . . . . . . . . . . . . . . . . . . . 17
2.1 General features . . . . . . . . . . . . . . . . . . . . . . . . 2 7.7.3 PFC demagnetization sensing
2.2 PFC controller features. . . . . . . . . . . . . . . . . . . 2 (SNSAUXPFC pin). . . . . . . . . . . . . . . . . . . . . 18
2.3 HBC controller features . . . . . . . . . . . . . . . . . . 2 7.7.4 PFC valley sensing
2.4 Protection features . . . . . . . . . . . . . . . . . . . . . . 2 (SNSAUXPFC pin). . . . . . . . . . . . . . . . . . . . . 18
7.7.5 PFC frequency and off-time limiting . . . . . . . . 19
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
7.7.6 PFC soft-start and soft-stop
4 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 (SNSCURPFC pin) . . . . . . . . . . . . . . . . . . . . 19
5 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.7.7 PFC overcurrent regulation,
6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 5 OCR-PFC (SNSCURPFC pin) . . . . . . . . . . . . 20
6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.7.8 PFC mains undervoltage protection/brownout
6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5 protection, UVP-mains
7 Functional description . . . . . . . . . . . . . . . . . . . 6 (SNSMAINS pin) . . . . . . . . . . . . . . . . . . . . . . 20
7.1 Overview of IC modules . . . . . . . . . . . . . . . . . . 6 7.7.9 PFC boost overvoltage protection,
7.2 Power supply . . . . . . . . . . . . . . . . . . . . . . . . . . 7 OVP-boost (SNSBOOST pin) . . . . . . . . . . . . 21
7.2.1 Low-voltage supply input 7.7.10 PFC short circuit/open-loop protection,
(SUPIC pin) . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 SCP/OLP-PFC (SNSBOOST pin) . . . . . . . . . 21
7.2.2 Regulated supply 7.8 HBC controller . . . . . . . . . . . . . . . . . . . . . . . . 21
(SUPREG pin) . . . . . . . . . . . . . . . . . . . . . . . . . 8 7.8.1 HBC high-side and low-side driver
7.2.3 High-side driver floating supply (GATEHS and GATELS pins). . . . . . . . . . . . . 21
(SUPHS pin) . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 7.8.2 HBC boost undervoltage protection,
7.2.4 High-voltage supply input UVP-boost (SNSBOOST pin) . . . . . . . . . . . . 21
(SUPHV pin) . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 7.8.3 HBC switch control. . . . . . . . . . . . . . . . . . . . . 22
7.3 Flow diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 9 7.8.4 HBC Adaptive Non-Overlap
7.4 Enable input (ANO) time function (HB pin) . . . . . . . . . . . . . 22
(SSHBC/EN pin) . . . . . . . . . . . . . . . . . . . . . . . 11 7.8.4.1 Inductive mode (normal operation) . . . . . . . . 22
7.5 IC protection . . . . . . . . . . . . . . . . . . . . . . . . . . 12 7.8.4.2 Capacitive mode . . . . . . . . . . . . . . . . . . . . . . 24
7.5.1 IC restart and shutdown . . . . . . . . . . . . . . . . . 12 7.8.5 HBC slope controlled oscillator
7.5.2 Protection and restart timer . . . . . . . . . . . . . . 13 (pin CFMIN) . . . . . . . . . . . . . . . . . . . . . . . . . . 25
7.5.2.1 Protection timer . . . . . . . . . . . . . . . . . . . . . . . 13 7.8.6 HBC feedback input (SNSFB pin) . . . . . . . . . 26
7.5.2.2 Restart timer . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7.8.7 HBC open-loop protection, OLP-HBC
7.5.3 Fast shutdown reset (SNSFB pin). . . . . . . . . . . . . . . . . . . . . . . . . . 26
(SNSMAINS pin). . . . . . . . . . . . . . . . . . . . . . . 14 7.8.8 HBC soft-start (pin SSHBC/EN) . . . . . . . . . . . 26
7.5.4 Output overvoltage protection 7.8.8.1 Soft-start voltage levels . . . . . . . . . . . . . . . . . 26
(SNSOUT pin) . . . . . . . . . . . . . . . . . . . . . . . . 14 7.8.8.2 Soft-start charge and discharge . . . . . . . . . . . 27
7.5.5 Output failed start protection, FSP-output 7.8.8.3 Soft-start reset . . . . . . . . . . . . . . . . . . . . . . . . 27
(SNSOUT pin) . . . . . . . . . . . . . . . . . . . . . . . . 14 7.8.9 HBC high-frequency protection, HFP-HBC . . 28
7.5.6 OverTemperature Protection 7.8.10 HBC overcurrent regulation and protection, OCR
(OTP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 and OCP (SNSCURHBC pin) . . . . . . . . . . . . 28
7.6 Burst mode operation 7.8.10.1 Boost voltage compensation . . . . . . . . . . . . . 28
(SNSBURST pin) . . . . . . . . . . . . . . . . . . . . . . 15 7.8.10.2 OverCurrent Regulation
7.7 PFC controller. . . . . . . . . . . . . . . . . . . . . . . . . 15 (OCR-HBC) . . . . . . . . . . . . . . . . . . . . . . . . . . 29
7.7.1 PFC gate driver 7.8.10.3 OverCurrent Protection
(GATEPFC pin). . . . . . . . . . . . . . . . . . . . . . . . 16 (OCP-HBC) . . . . . . . . . . . . . . . . . . . . . . . . . . 30
7.7.2 PFC on-time control . . . . . . . . . . . . . . . . . . . . 16 7.8.11 HBC capacitive mode regulation,
7.7.2.1 PFC error amplifier CMR (HB pin). . . . . . . . . . . . . . . . . . . . . . . . . 31
(COMPPFC and SNSBOOST pins) . . . . . . . . 16 7.9 Protection functions overview . . . . . . . . . . . . 31
continued >>
TEA1716T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 32
9 Thermal characteristics . . . . . . . . . . . . . . . . . 33
10 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 33
11 Application information. . . . . . . . . . . . . . . . . . 40
12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 41
13 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 42
14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 43
15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 44
15.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 44
15.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
15.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
15.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 45
16 Contact information. . . . . . . . . . . . . . . . . . . . . 45
17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.