SEP8506

GaAs Infrared Emitting Diode

FEATURES
• Side-emitting plastic package
• 50¡ (nominal) beam angle
• 935 nm wavelength
• Mechanically and spectrally matched to
SDP8406 phototransistor, SDP8106
photodarlington and SDP8000/8600 series
Schmitt trigger

INFRA-20.TIF

DESCRIPTION OUTLINE DIMENSIONS in inches (mm)

The SEP8506 is a gallium arsenide infrared emitting Tolerance 3 plc decimals ±0.005(0.12)
diode molded in a side-emitting red plastic package. 2 plc decimals ±0.020(0.51)
The chip is positioned to emit radiation through a plastic
lens from the side of the package.

DIM_071.ds4

h
Honeywell reserves the right to make
changes in order to improve design and
40
supply the best products possible.
SEP8506
GaAs Infrared Emitting Diode

ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS

ABSOLUTE MAXIMUM RATINGS SCHEMATIC

(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current 50 mA
Power Dissipation 100 mW [À]
Storage Temperature Range -40¡C to 85¡C
Operating Temperature Range -40¡C to 85¡C
Soldering Temperature (5 sec) 240¡C
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
0.78 mW/¡C.

h
Honeywell reserves the right to make
changes in order to improve design and
41
supply the best products possible.
SEP8506
GaAs Infrared Emitting Diode

Fig. 1 Radiant Intensity vs Fig. 2 Radiant Intensity vs

Angular Displacement gra_030.ds4 Forward Current gra_028.ds4

1.0 10.0

Normalized radiant intensity

0.9
5.0
0.8
Relative intensity

0.7 TA = 25 °C
2.0
0.6
0.5 1.0
0.4
0.5
0.3
0.2
0.2
0.1
0.0 0.1
-60 -45 -30 -15 0 +15 +30 +45 +60 10 20 30 40 50 100
Angular displacement - degrees Forward current - mA

Fig. 3 Forward Voltage vs Fig. 4 Forward Voltage vs

Forward Current gra_003.ds4 Temperature gra_207.ds4

1.40 1.40
1.35
1.35
Forward voltage - V
Forward voltage - V

1.30
1.30
1.25
1.25
1.20
1.20
1.15
IF = 20 mA
1.15 1.10
1.10 1.05
1.05 1.00
0 20 40 60 -40 -15 10 35 60 85
Forward current - mA Temperature - °C

Fig. 5 Spectral Bandwidth Fig. 6 Coupling Characteristics

gra_005.ds4 with SDP8406 gra_031.ds4

1.0 10
0.9 6
0.8 4
Light current - mA
Relative intensity

0.7 2
0.6
0.5 1.0
0.4 0.6
0.3 0.4 IF = 20 mA
0.2 VCE = 5V
0.2
0.1
TA = 25 °C
0.0 0.1
870 890 910 930 950 970 990 1010 0.01 0.02 0.05 0.1 0.2 0.5 1.0
Wavelength - nm Lens-to-lens separation - inches

h
Honeywell reserves the right to make
changes in order to improve design and
42
supply the best products possible.
SEP8506
GaAs Infrared Emitting Diode

Fig. 7 Relative Power Output vs

Free Air Temperature gra_130.ds4

10

5.0
Relative power output

2.0 IF = 40 mA
IF = 30 mA
1.0
IF = 20 mA
0.5
IF = 10 mA
0.2

0.1
-50 -25 0 +25 +50 +75 +100
TA - Free-air temperature - (°C)

All Performance Curves Show Typical Values

h
Honeywell reserves the right to make
changes in order to improve design and
43
supply the best products possible.