VDRM = 4500 V Asymmetric Integrated Gate-

ITGQM = 4000 A
ITSM = 32×103 A
Commutated Thyristor
V(T0)
rT
=
=
1.4
0.325
V
mW
5SHY 35L4520
VDC = 2800 V
Doc. No. 5SYA1248-01 July 14

· High snubberless turn-off rating

· Optimized for medium frequency
· High electromagnetic immunity
· Simple control interface with status feedback
· AC or DC supply voltage
· Option for series connection (contact factory)

Blocking
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Rep. peak off-state voltage VDRM Gate Unit energized 4500 V
Permanent DC voltage for VDC Ambient cosmic radiation at sea 2800 V
100 FIT failure rate of GCT level in open air. Gate Unit energized
Reverse voltage VRRM 17 V
Characteristic values
Parameter Symbol Conditions min typ max Unit
Rep. peak off-state current IDRM VD = VDRM, Gate Unit energized 50 mA

Mechanical data (see Fig. 11, 12)

Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Mounting force Fm 36 40 44 kN
Characteristic values
Parameter Symbol Conditions min typ max Unit
Pole-piece diameter Dp ± 0.1 mm 85 mm
Housing thickness H clamped Fm =40kN 25.7 26.2 mm
Weight m 2.9 kg
Surface creepage distance Ds Anode to Gate 33 mm
Air strike distance Da Anode to Gate 10 mm
Length l ± 1.0 mm 439 mm
Height h ± 1.0 mm 41 mm
Width IGCT w ± 1.0 mm 173 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur

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 5SHY 35L4520
GCT Data
On-state (see Fig. 3, 4, 5, 6, 14, 15)
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Max. average on-state IT(AV)M Half sine wave, TC = 85 °C, 1700 A
current Double side cooled
Max. RMS on-state current IT(RMS) 2670 A
Max. peak non-repetitive ITSM tp = 3 ms, Tj = 125 °C, sine wave 50×103 A
surge on-state current after surge: VD = VR = 0 V
Limiting load integral I2t 3.75×106 A2s
Max. peak non-repetitive ITSM tp = 10 ms, Tj = 125 °C, sine wave 32×103 A
surge on-state current after surge: VD = VR = 0 V
Limiting load integral I2t 5.12×106 A2s
Max. peak non-repetitive ITSM tp = 30 ms, Tj = 125 °C, sine wave 20.5×103 A
surge on-state current after surge: VD = VR = 0 V
Limiting load integral I2t 6.3×106 A2s
Stray inductance between LD Only relevant for applications with 300 nH
GCT and antiparallel diode antiparallel diode to the IGCT
Critical rate of rise of on- diT/dt(cr) For higher diT/dt and current lower 200 A/µs
state current than 100 A an external retrigger puls
is required.
Characteristic values
Parameter Symbol Conditions min typ max Unit
On-state voltage VT IT = 4000 A, Tj = 125 °C 2.35 2.7 V
Threshold voltage V(T0) Tj = 125 °C 1.4 V
Slope resistance rT IT = 1000...4000 A 0.325 mW

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Doc. No. 5SYA1248-01 July 14 page 2 of 10
 5SHY 35L4520

Turn-on switching (see Fig. 14, 15)

Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Critical rate of rise of on- diT/dt(cr) f = 0..500 Hz, Tj = 125 °C, 1000 A/µs
state current IT = 4000 A
VD = 2800 V, ITM £ 4800 A
Characteristic values
Parameter Symbol Conditions min typ max Unit
Turn-on delay time td(on) VD = 2800 V, Tj = 125 °C, 3.5 µs
Turn-on delay time status td(on) SF I T = 4000 A, di/dt = VD / Li
7 µs
feedback Li = 5 µH
CCL = 10 µF, LCL = 0.3 µH
Rise time tr DFWD = DCL = 5SDF 10H4503 1 µs
Turn-on energy per pulse Eon 1.5 J

Turn-off switching (see Fig. 7, 8, 10, 14, 15)

Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Max. controllable turn-off ITGQM VDM £ VDRM, Tj = 125°C, 4000 A
current VD = 2800 V, RS = 0.65 W,
CCL = 10 µF, LCL £ 0.3 µH
DFWD = DCL = 5SDF 10H4503
Characteristic values
Parameter Symbol Conditions min typ max Unit
Turn-off delay time td(off) VD = 2800 V, Tj = 125 °C, 7 µs
Turn-off delay time status td(off) SF V DM £ VDRM, RS = 0.65 W 7 µs
feedback ITGQ = 4000 A, Li = 5 µH
CCL = 10 µF, LCL = 0.3 µH
Turn-off energy per pulse Eoff DFWD = DCL = 5SDF 10H4503 19.5 22 J

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Doc. No. 5SYA1248-01 July 14 page 3 of 10
 5SHY 35L4520

Gate Unit Data

Power supply (see Fig. 2, 9, 10, 12, 13)
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Gate Unit voltage VGin RMS AC square wave amplitude (15 kHz 28 40 V
(Connector X1) - 100kHz) or DC voltage. No
galvanic isolation to power circuit.
Min. current needed to power IGin Min Rectified average current 2 A
up the Gate Unit see application note 5SYA 2031
Gate Unit power PGin Max 130 W
consumption
Characteristic values
Parameter Symbol Conditions min typ max Unit
Internal current limitation IGin Max Rectified average current limited by 8 A
the Gate Unit

Optical control input/output 2)

Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Min. on-time ton 40 µs
Min. off-time toff 40 µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Optical input power Pon CS CS: Command signal -15 -1 dBm
Optical noise power Poff CS SF: Status feedback -45 dBm
Optical output power Pon SF Valid for 1mm plastic optical fiber -19 -1 dBm
Optical noise power Poff SF (POF) -50 dBm
Pulse width threshold tGLITCH Max. pulse width without response 400 ns
External retrigger pulse width tretrig 700 1100 ns
2) Do not disconnect or connect fiber optic cables while light is on.

Connectors 2) (see Fig. 11, 12, 13)

Parameter Symbol Description
Gate Unit power connector X1 AMP: MTA-156, Part Number 641210-5 3)
LWL receiver for command signal CS Avago, Type HFBR-2521Z 4)
LWL transmitter for status feedback SF Avago, Type HFBR-1528Z 4)
2) Do not disconnect or connect fiber optic cables while light is on.
3) AMP, www.amp.com
4) Avago Technologies, www.avagotech.com

Visual feedback (see Fig. 13)

Parameter Symbol Description Color
Gate OFF LED1 "Light" when GCT is off (green)
Gate ON LED2 "Light" when gate-current is flowing (yellow)
Fault LED3 "Light" when not ready / Failure (red)
Power supply voltage OK LED4 "Light" when power supply is within specified range (green)

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Doc. No. 5SYA1248-01 July 14 page 4 of 10
 5SHY 35L4520
Thermal
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Junction operating temperature Tvj -25 125 °C
Storage temperature range Tstg -25 60 °C
Ambient operational temperature Ta -25 50 °C
Characteristic values
Parameter Symbol Conditions min typ max Unit
Thermal resistance junction-to-case Rth(j-c)
Double side cooled 8.5 K/kW
of GCT
Thermal resistance case-to- Rth(c-h) 3 K/kW
Double side cooled
heatsink of GCT

Analytical function for transient thermal

impedance:

n
Z th(j-c) (t) = å Ri(1 - e- t/t i )
i=1
i 1 2 3 4
Ri(K/kW) 5.562 1.527 0.868 0.545
ti(s) 0.5119 0.0896 0.0091 0.0024

Fig. 1 Transient thermal impedance (junction-to-case)

vs. time (max. values)

Max. Turn-off current for Lifetime operation

· calculated lifetime of on-board capacitors

20 years
· with slightly forced air cooling (air velocity
> 0.5 m/s)
· strong air cooling allows for increased
ambient temperature

Fig. 2 Max. turn-off current vs. frequency for lifetime

operation

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Doc. No. 5SYA1248-01 July 14 page 5 of 10
 5SHY 35L4520

Max. on-state characteristic model: Max. on-state characteristic model:

VT25 = ATvj + BTvj × IT + CTvj × ln(IT + 1) + DTvj × IT VT125 = ATvj + BTvj × IT + CTvj × ln(IT + 1) + DTvj × IT
Valid for iT = 300 – 30000 A Valid for iT = 300 – 30000 A
A25 B25 C25 D25 A125 B125 C125 D125
622.7×10-3 163.4×10 -6
141.1×10-3 0.0 -16.0×10-3 226.6×10 -6
218.4×10-3 0.0

Fig. 3 GCT on-state voltage characteristics Fig. 4 GCT on-state voltage characteristics

Fig. 5 Surge on-state current vs. pulse length, half- Fig. 6 Surge on-state current vs. number of pulses,
sine wave, no reapplied voltage half-sine wave, 10 ms, 50Hz, no reapplied
voltage

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Doc. No. 5SYA1248-01 July 14 page 6 of 10
 5SHY 35L4520

Fig. 7 GCT turn-off energy per pulse vs. turn-off Fig. 8 Safe Operating Area
current

Fig. 9 Max. Gate Unit input power in chopper mode Fig. 10 Burst capability of Gate Unit

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Doc. No. 5SYA1248-01 July 14 page 7 of 10
 5SHY 35L4520

Max n 120.5
n 85

41
H
n 85 M4 (2x) M4 (2x)

76 113 228.8±0.5
Detail A M4 (2x)

X1
5
68.8±0.3

4
3

50±0.3
2

50±0.3
1
150

173
50±0.3
50±0.3
68.7±0.3

n 3.6±0.1x 3+0.2
-0 (2x)
SF CS
19.8±0.2 134
439

Fig. 11 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated
otherwise

1) VGin (AC or DC+)

2) VGin (AC or DC+)
3) Cathode

X1
4) VGin (AC or DC-)
1 2 3 4 5
5) VGin (AC or DC-)
Fig. 12 Detail A: pin out of supply connector X1

AS-IGCT

Gate Unit AS-GCT

Supply (VGIN)
X1 Internal Supply (No galvanic isolation to power circuit) Anode

LED1 Gate
LED2 Turn-
LED3 On
LED4 Circuit
Logic
Command Signal (Light)
CS Rx Monitoring Cathode
Turn-
Off
Status Feedback (Light) Circuit
SF Tx

Fig. 13 Block diagram

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Doc. No. 5SYA1248-01 July 14 page 8 of 10
 5SHY 35L4520

Turn-on External Turn-off

dIT/dt Retrigger pulse
VDM
ITM VDSP
VD
VD IT
0.9 VD IT

0.4 ITGQ
0.1 VD
VD

CS CS CS

SF SF SF

td(on) SF tretrig td(off) SF

td(on) td(off)

tr
ton toff

Fig. 14 General current and voltage waveforms with IGCT - specific symbols

Li LCL LD

DCL DUT
Rs

CCL
VDC
DFWD

Fig. 15 Test circuit

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Doc. No. 5SYA1248-01 July 14 page 9 of 10
 5SHY 35L4520

Related documents:
5SYA 2031 Applying IGCT Gate Units
5SYA 2032 Applying IGCTs
5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
5SYA 2046 Failure rates of IGCTs due to cosmic rays
5SYA 2048 Field measurements on High Power Press Pack Semiconductors
5SYA 2051 Voltage ratings of high power semiconductors
5SZK 9107 Specification of enviromental class for pressure contact IGCTs, OPERATION available on request, please contact factory
5SZK 9109 Specification of enviromental class for pressure contact IGCTs, STORAGE available on request, please contact factory
5SZK 9110 Specification of enviromental class for pressure contact IGCTs, TRANSPORTATION available on request, please contact
factory

Please refer to http://www.abb.com/semiconductors for current version of documents.

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

ABB Switzerland Ltd Doc. No. 5SYA1248-01 July 14

Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland

Telephone +41 (0)58 586 1419

Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors