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    Zmi-Donducto'i Pioduati, One.: Opto Electronics Detectors-Programmable Unijunction Transistors

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    willian Galdino
    This document provides specifications for various opto-electronic detectors and semiconductors from NJ Semi-Conductors including: - Programmable unijunction transistors with maximum voltages and currents, rise times, and triggering irradiances. - SCRs listing forward voltages, holding currents, effective irradiances to trigger at different voltages and temperatures, and packaging information. - Notes that gate current to trigger from direct electrical supply is typically 20uA but no more than 200uA at 25°C, and effective irradiance decreases with increasing anode voltage and gate-cathode resistance.

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    © All Rights Reserved
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    Zmi-Donducto'i Pioduati, One.: Opto Electronics Detectors-Programmable Unijunction Transistors

    Uploaded by

    willian Galdino
    33 views1 page
    This document provides specifications for various opto-electronic detectors and semiconductors from NJ Semi-Conductors including: - Programmable unijunction transistors with maximum voltages and currents, rise times, and triggering irradiances. - SCRs listing forward voltages, holding currents, effective irradiances to trigger at different voltages and temperatures, and packaging information. - Notes that gate current to trigger from direct electrical supply is typically 20uA but no more than 200uA at 25°C, and effective irradiance decreases with increasing anode voltage and gate-cathode resistance.

    Original Description:

    l9

    Original Title

    L9 SERIES

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    This document provides specifications for various opto-electronic detectors and semiconductors from NJ Semi-Conductors including: - Programmable unijunction transistors with maximum voltages and currents, rise times, and triggering irradiances. - SCRs listing forward voltages, holding currents, effective irradiances to trigger at different voltages and temperatures, and packaging information. - Notes that gate current to trigger from direct electrical supply is typically 20uA but no more than 200uA at 25°C, and effective irradiance decreases with increasing anode voltage and gate-cathode resistance.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    33 views1 page

    Zmi-Donducto'i Pioduati, One.: Opto Electronics Detectors-Programmable Unijunction Transistors

    Uploaded by

    willian Galdino
    This document provides specifications for various opto-electronic detectors and semiconductors from NJ Semi-Conductors including: - Programmable unijunction transistors with maximum voltages and currents, rise times, and triggering irradiances. - SCRs listing forward voltages, holding currents, effective irradiances to trigger at different voltages and temperatures, and packaging information. - Notes that gate current to trigger from direct electrical supply is typically 20uA but no more than 200uA at 25°C, and effective irradiance decreases with increasing anode voltage and gate-cathode resistance.

    Copyright:

    © All Rights Reserved
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    ^zmi-donducto'i ^Pioduati, One.

    20 STERN AVE. TELEPHONE: (973) 376-2922


    SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005
    U.S.A. FAX: (973) 376-8960

    OPTO ELECTRONICS
    DETECTORS-PROGRAMMABLE UNIJUNCTION TRANSISTORS
    ilnode-Cathdde D.C. Anode RiseTin-e Irraoiance to Forward on Voltage
    Voltage Current t, Trigger VT P; Package Specification
    Max. Max. Typica <S> Rg^SOOK'.!, Vs = 10V Max. Max. Package Outline Sheet
    GE Type (V) (ma) (nsec) Max. (V) (mw; Type Mo. No.

    L14T ±40 100 80 ImW/Cm2 1.5 200 TO-92 263 55.54

    OPTO ELECTRONICS
    DETECTORS-SCSs
    Cathode Gate Currert
    Voltage Forward Voltage Holding to Fire Effective Irradiance
    /mode to Cathode al 175ma Anode Curren t Current @ VAC = 40V To Trigger
    -"orward and Reverse <S> Ro. = 27k!! (a) R,,,. = 27kn RA = 800H @ VAC — 40V Package Specification
    Man. Max. Max. Max. RA = 800!! Package Outline Sheet
    CET/pe <v; (V) (mA) (;iA) Max. Type No. No.
    L1V 2.3 |*g$|* 10 lOmW/Cm' TO-18 53 55.41

    OPTO ELECTRONICS
    DETECTORS-SCR's
    Effective Irradiance
    (mw/cm!) to Trigger '
    Inc <a 25°C Max. Temp. °c at25°C TJ, 6Vdc Package ?63
    Max Outline
    GE Type PflV/Vso («r Opei. Stor. Win. Max. NO. Snee! No.
    L8U » .44 MV no» 0.68 10.0 101 190.10
    L8F ••»'• .44 wo° ISO* 0.68 10.0 101 190.10
    UA too .44 «r .190* 0.68 10.0 W 190.10
    L86 t» .44 100" 49B» 0.68 10.0 101 190.10
    L8G 200 .44 100° --a»» 0.68 10.0 101 190.10

    L81IU 25 .77 «*•; WP«. 0.68 10.0 102 190.10


    L811F »'• .77 109" tto» 0.68 10.0 102 190.10
    [aim 100 .77 IMP' .W 0.68 10.0 102 190.10
    ^TT ' ,
    LflllB 'isr* .77 •m£: IW» 0.68 10.0 102 190.10
    L811G 200 .77 «*- ?-w» 0.68 10.0 102 190.10
    L9U 25 . .44 >«*>-;• •MSp»., 0.68 4.2 Ml 190.10
    L9F -SB I .44 ioe» •'W 0.68 4.2 101 190.10 101
    L9A m' .44 108» 150» 0.68 4.2 1M 190.10
    L9B 158 .44 U»0° -HP. 0.68 4.2 101 190.10
    L9G W .44 a«o» «0° 0.68 4.2 iet 190.10
    L911U 25 .77 ...^i-,.
    100° •' •'M0» 0.68 4.2 102 190.10
    L911F 50 .77 iso» 0.68 4.2 102 190.10
    L911A .77 100° 150° 0.68 4.2 102 190.10
    L911B I* .77 top"
    1» ' 150° 0.68 4.2 102 190.10
    L911G 200 .77 108° 180° 0.68 4.2 m 190.10

    NOTE: Gate current to trigger from direct electrical supply is 20 «A typical, 200 #A maximum at 25°C Tj.

    1 Effective Irradiance to trigger decreases with increasing anode voltage and increasing gate to cathode resistance.

    NJ Semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without
    nonce. Information fijrnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time or>ing
    to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use
    -Conductors encourages customers to verify that datasheets are current before placing orders.

    Quality Semi-Conductors

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