Semiconductor Technical Data: VCEO (Sus) VCEO (Sus)

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by TIP140/D
SEMICONDUCTOR TECHNICAL DATA

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# !!" !
. . . designed for general–purpose amplifier and low frequency switching applications.
• High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V
• Collector–Emitter Sustaining Voltage — @ 30 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCEO(sus) = 60 Vdc (Min) — TIP140, TIP145

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
• Monolithic Construction with Built–In Base–Emitter Shunt Resistor

MAXIMUM RATINGS *Motorola Preferred Device
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
TIP140 TIP141 TIP142
Rating Symbol TIP145 TIP146 TIP147 Unit 10 AMPERE
DARLINGTON
Collector–Emitter Voltage VCEO 60 80 100 Vdc
COMPLEMENTARY SILICON
Collector–Base Voltage VCB 60 80 100 Vdc POWER TRANSISTORS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage VEB 5.0 Vdc
60 – 100 VOLTS
125 WATTS
Collector Current — Continuous IC 10 Adc
Peak (1) 15
Base Current — Continuous IB 0.5 Adc
Total Device Dissipation PD 125 Watts
@ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ
Operating and Storage Junction TJ, Tstg – 65 to + 150 _C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
_C/W
Thermal Resistance, Junction to Case RθJC 1.0
Thermal Resistance, Case to Ambient RθJA 35.7 _C/W CASE 340D–01
v
(1) 5 ms, 10% Duty Cycle.
DARLINGTON SCHEMATICS
NPN COLLECTOR PNP COLLECTOR

TIP140 TIP145
TIP141 TIP146
TIP142 TIP147
BASE BASE
≈ 8.0 k ≈ 40 ≈ 8.0 k ≈ 40
EMITTER EMITTER
Preferred devices are Motorola recommended choices for future use and best overall value.
 Motorola, Inc. 1995 1

Motorola Bipolar Power Transistor Device Data
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (1) VCEO(sus) Vdc
(IC = 30 mA, IB = 0) TIP140, TIP145 60 — —
TIP141, TIP146 80 — —
TIP142, TIP147 100 — —
Collector Cutoff Current ICEO mA
(VCE = 30 Vdc, IB = 0) TIP140, TIP145 — — 2.0
(VCE = 40 Vdc, IB = 0) TIP141, TIP146 — — 2.0
(VCE = 50 Vdc, IB = 0) TIP142, TIP147
— — 2.0
Collector Cutoff Current ICBO mA
(VCB = 60 V, IE = 0) TIP140, TIP145 — — 1.0
(VCB = 80 V, IE = 0) TIP141, TIP146 — — 1.0
(VCB = 100 V, IE = 0) TIP142, TIP147
— — 1.0
Emitter Cutoff Current (VBE = 5.0 V) IEBO — — 20 mA
ON CHARACTERISTICS (1)
DC Current Gain hFE —
(IC = 5.0 A, VCE = 4.0 V) 1000 — —
(IC = 10 A, VCE = 4.0 V) 500 — —
Collector–Emitter Saturation Voltage VCE(sat) Vdc
(IC = 5.0 A, IB = 10 mA) — — 2.0
(IC = 10 A, IB = 40 mA) — — 3.0
Base–Emitter Saturation Voltage VBE(sat) — — 3.5 Vdc
(IC = 10 A, IB = 40 mA)
ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VBE(on) — — 3.0 Vdc
ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 10 A, VCE = 4.0 Vdc)
ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Resistive Load (See Figure 1)
µs
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Delay Time td — 0.15 —
µs
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCC = 30 V, IC = 5.0 A,
Rise Time
v
IB = 20 mA, Duty Cycle 2.0%,
tr — 0.55 —
µs
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Storage Time IB1 = IB2, RC & RB Varied, TJ = 25_C) ts — 2.5 —
Fall Time tf — 2.5 — µs
v
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%.
10
VCC PNP
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS – 30 V
5.0 NPN
D1, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA RC ts
MSD6100 USED BELOW IB ≈ 100 mA SCOPE
TUT 2.0
t, TIME ( µs)
V2 RB tf
approx
+12 V 1.0
D1 ≈ 8.0 k
51 ≈ 40 tr
0
0.5
V1
appox. + 4.0 V VCC = 30 V
td @ VBE(off) = 0
– 8.0 V 25 µs for td and tr, D1 is disconnected 0.2 IC/IB = 250
and V2 = 0
IB1 = IB2
tr, tf ≤ 10 ns TJ = 25°C
DUTY CYCLE = 1.0% 0.1
0.2 0.5 1.0 3.0 5.0 10 20
For NPN test circuit reverse diode and voltage polarities.
IC, COLLECTOR CURRENT (AMP)
Figure 1. Switching Times Test Circuit Figure 2. Switching Times
2 Motorola Bipolar Power Transistor Device Data

TYPICAL CHARACTERISTICS
NPN PNP
TIP140, TIP141, TIP142 TIP145, TIP146, TIP147
20,000
5000 TJ = 150°C
TJ = 150°C
100°C 10,000 100°C
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN

7000
2000 25°C 25°C
– 55°C 5000
– 55°C
1000 3000
2000
500 VCE = 4.0 V VCE = 4.0 V
300 1000
0.5 1.0 2.0 3.0 4.0 5.0 7.0 10 0.5 0.7 1.0 2.0 3.0 4.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain versus Collector Current
VCE(SAT) , COLLECTOR–EMITTER SATURATION VOLTAGE (VOLTS)
VCE(SAT) , COLLECTOR–EMITTER SATURATION VOLTAGE (VOLTS)

5.0 5.0
3.0 3.0
2.0 2.0 IC = 10 A, IB = 4.0 mA

IC = 10 A, IB = 4.0 mA
IC = 5.0 A, IB = 10 mA IC = 5.0 A, IB = 10 mA
1.0 1.0
IC = 1.0 A, IB = 2.0 mA IC = 1.0 A, IB = 2.0 mA
0.7 0.7
0.5 0.5
– 75 – 50 – 25 0 25 50 75 100 125 150 175 – 75 – 50 – 25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Collector–Emitter Saturation Voltage
4.0 4.0
VBE, BASE–EMITTER VOLTAGE (VOLTS)
VBE, BASE–EMITTER VOLTAGE (VOLTS)
3.6 VCE = 4.0 V 3.6 VCE = 4.0 V
3.2 3.2
2.8 2.8
2.4 2.4
IC = 10 A IC = 10 A
2.0 2.0
1.6 5.0 A 1.6

5.0 A
1.2 1.2
1.0 A 1.0 A
0.8 0.8
– 75 – 25 25 75 125 175 – 75 – 25 25 75 125 175
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Base–Emitter Voltage
Motorola Bipolar Power Transistor Device Data 3

ACTIVE–REGION SAFE OPERATING AREA
There are two limitations on the power handling ability of a The data of Figure 6 is based on T J(pk) = 150_C; TC is
transistor: average junction temperature and second break- variable depending on conditions. At high case temper-
down. Safe operating area curves indicate IC – VCE limits of atures, thermal limitations will reduce the power that can be
the transistor that must be observed for reliable operation; handled to values less than the limitations imposed by
i.e., the transistor must not be subjected to greater dissipa- second breakdown.
tion than the curves indicate.
20
IC, COLLECTOR CURRENT (AMP) (mA)
15
IC, COLLECTOR CURRENT (AMPS)

10
7.0 10
5.0
7.0
3.0 dc
5.0
2.0 TJ = 150°C 100 mJ
SECONDARY BREAKDOWN LIMIT
1.0 BONDING WIRE LIMIT
THERMAL LIMITATION @ TC = 25°C
2.0
TIP140, 145
TIP141, 146
0.2 TIP142, 147 1.0
10 15 20 30 50 70 100 0.5 1.0 2.0 5.0 10 20 50 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) L, UNCLAMPED INDUCTIVE LOAD (mH)
Figure 6. Active–Region Safe Operating Area Figure 7. Unclamped Inductive Load
VCE MONITOR w ≈ 7.0 ms (SEE NOTE 1)

INPUT 5.0 V
MPS–U52 VOLTAGE 0
COLLECTOR 100 ms
RBB1 100 mH
TUT CURRENT 0
50
INPUT 1.5 k VCC = 20 V 1.42 A
50 RBB2 IC
MONITOR VCE(sat)
= 100 – 20 V
VBB2 = 0
RS = 0.1 COLLECTOR
VBB1 = 10 V
VOLTAGE
V(BR)CER
TEST CIRCUIT
NOTE 1: Input pulse width is increased until ICM = 1.42 A. VOLTAGE AND CURRENT WAVEFORMS
NOTE 2: For NPN test circuit reverse polarities.
Figure 8. Inductive Load
100 5.0
hfe , SMALL–SIGNAL FORWARD CURRENT
70 VCE = 10 V
IC = 1.0 A
PD, POWER DISSIPATION (WATTS)
50
TJ = 25°C 4.0
PNP
TRANSFER RATIO
20 PNP
NPN 3.0
10 NPN
7.0 2.0
5.0
1.0
2.0
1.0 0
1.0 2.0 3.0 5.0 7.0 10 0 40 80 120 160 200
f, FREQUENCY (MHz) TA, FREE–AIR TEMPERATURE (°C)
Figure 9. Magnitude of Common Emitter Figure 10. Free–Air Temperature

Small–Signal Short–Circuit Forward Power Derating
Current Transfer Ratio

PACKAGE DIMENSIONS
C NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
B Q E Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS INCHES
U 4 DIM MIN MAX MIN MAX
A 19.00 19.60 0.749 0.771
A B 14.00 14.50 0.551 0.570
L C 4.20 4.70 0.165 0.185
S D 1.00 1.30 0.040 0.051
1 2 3 E 1.45 1.65 0.058 0.064
K G 5.21 5.72 0.206 0.225
H 2.60 3.00 0.103 0.118
J 0.40 0.60 0.016 0.023
K 28.50 32.00 1.123 1.259
L 14.70 15.30 0.579 0.602
Q 4.00 4.25 0.158 0.167
S 17.50 18.10 0.689 0.712
U 3.40 3.80 0.134 0.149
V 1.50 2.00 0.060 0.078
D J STYLE 1:
V H PIN 1. BASE
2. COLLECTOR
G 3. EMITTER
4. COLLECTOR
CASE 340D–01
TO–218AC
ISSUE A
Motorola Bipolar Power Transistor Device Data 5

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NPN COLLECTOR PNP COLLECTOR

 Motorola, Inc. 1995 1

Figure 1. Switching Times Test Circuit Figure 2. Switching Times

2 Motorola Bipolar Power Transistor Device Data

hFE , DC CURRENT GAIN

VCE(SAT) , COLLECTOR–EMITTER SATURATION VOLTAGE (VOLTS)

2.0 2.0 IC = 10 A, IB = 4.0 mA

VBE, BASE–EMITTER VOLTAGE (VOLTS)

3.6 VCE = 4.0 V 3.6 VCE = 4.0 V

1.6 5.0 A 1.6

Motorola Bipolar Power Transistor Device Data 3

IC, COLLECTOR CURRENT (AMPS)

Figure 6. Active–Region Safe Operating Area Figure 7. Unclamped Inductive Load

VCE MONITOR w ≈ 7.0 ms (SEE NOTE 1)

Figure 9. Magnitude of Common Emitter Figure 10. Free–Air Temperature

4 Motorola Bipolar Power Transistor Device Data

Motorola Bipolar Power Transistor Device Data 5

How to reach us:

6 Motorola Bipolar Power Transistor Device Data

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